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Vishay General Semiconductor - Diodes Division SMB10J18AHE3_A/I
- Part No.:
- SMB10J18AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J18AHE3_A/I.pdf
- Description:
- TVS DIODE 18VWM 29.2VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,664
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Product details
Overview
SMB10J18AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection with 1000 W peak pulse power (10/1000 µs), 18 V stand-off voltage (VWM), and 29.2 V clamping voltage (VC) at 34.2 A peak pulse current. It is AEC-Q101 qualified and used to protect automotive sensor signal lines and MOSFET gate drivers against inductive switching transients.
For engineers reviewing the SMB10J18AHE3_A/I datasheet, SMB10J18AHE3_A/I pinout, SMB10J18AHE3_A/I application, or SMB10J18AHE3_A/I equivalent, this part delivers verified clamping performance, automotive-grade reliability, and surface-mount compatibility for space-constrained PCB layouts in harsh environments.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds 18 V (VWM), it avalanches at 20.0–22.1 V (VBR @ 1 mA), limiting transient energy by diverting surge current to ground. Its low incremental surge resistance ensures stable clamping under fast-rising transients (e.g., ISO 7637-2 Pulse 1/2a/5a).
Thermal design is supported by RθJL = 20 °C/W junction-to-lead resistance and MSL Level 1 rating (260 °C peak reflow), enabling robust solderability and thermal dissipation on standard 0.2" × 0.2" copper pads. The glass-passivated junction and matte tin-plated leads meet J-STD-002/JESD 22-B102 solderability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 18 V - Maximum continuous reverse operating voltage before clamping begins; defines safe signal line operating margin. |
| VBR min/max | 20.0 V / 22.1 V @ 1 mA - Breakdown voltage range confirming consistent avalanche initiation across production lot. |
| VC @ IPPM | 29.2 V @ 34.2 A - Clamping voltage during 10/1000 µs surge; determines maximum stress imposed on protected IC. |
| PPPM | 1000 W - Peak pulse power handling capability; enables protection against high-energy transients like load dump. |
| IFSM | 100 A - Non-repetitive forward surge current rating; supports robustness against accidental polarity reversal events. |
| TJ max | +150 °C - Maximum junction temperature; allows operation in under-hood automotive environments. |
| AEC-Q101 | Qualified - Validated for automotive electronics per stress test requirements including HTOL, TCT, and ESD. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); terminals are matte tin-plated for reliable solder joint formation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction path | Connected to lower-potential side (e.g., ground or signal return); conducts during forward surge or miswiring. |
| Cathode | Clamping reference node | Marked end (color band); connected to protected line (e.g., CAN_H, LIN, sensor output); sinks surge current to ground. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, humidity testing, and mechanical shock per JESD47. |
| Low clamping ratio (VC/VBR) | ~1.46 (29.2 V / 20.0 V) - Minimizes overvoltage stress on downstream ICs during transient events. |
| MSL Level 1 rating | Compatible with standard SMT reflow profiles up to 260 °C peak without preconditioning. |
| Glass-passivated junction | Enhances long-term reliability and stability of breakdown characteristics under thermal and humidity stress. |
| 1000 W peak pulse power | Supports protection against severe transients such as ISO 16750-2 Load Dump (up to 40 V, 100 ms) when combined with upstream impedance. |
Applications
| Automotive Sensor Protection | Power Supply Input Protection |
|---|---|
Use Scenario: Protecting analog output lines of pressure, temperature, or position sensors in engine control units exposed to inductive kickback from solenoid drivers. IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed between sensor output and ground, activated only during overvoltage events. Use Value: Limits transient voltage to ≤29.2 V, preventing damage to 3.3 V or 5 V ADC inputs while maintaining signal integrity during normal operation. |
Use Scenario: Safeguarding 12 V automotive power rail inputs of infotainment head units against load dump and jump-start surges. IC Role / Device Role / Timing Role: Primary front-end TVS in parallel with input capacitor, clamping transients before they reach DC-DC converters. Use Value: Absorbs up to 1000 W of surge energy (10/1000 µs), reducing need for oversized input filtering and enabling compact board layout. |
| MOSFET Gate Driver Protection | Industrial CAN Bus Node Protection |
Use Scenario: Shielding high-side N-channel MOSFET gate drivers in motor control modules from Miller-induced voltage spikes during switching. IC Role / Device Role / Timing Role: Fast-response unidirectional clamp between gate and source, suppressing dv/dt-induced turn-on. Use Value: Responds within picoseconds to limit gate-source voltage to ≤29.2 V, preventing unintended conduction and device failure. |
Use Scenario: Adding secondary surge immunity to CAN_H/CAN_L lines in industrial PLC I/O modules subjected to EFT and lightning-induced surges. IC Role / Device Role / Timing Role: Discrete TVS pair (one per line) placed before common-mode choke, providing asymmetric clamping. Use Value: Maintains CAN signal integrity by clamping differential transients to <60 V while preserving >1 V common-mode margin for ISO 11898-2 compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ18AHE3_A/I | Same VWM (18 V), identical SMB package, but rated for 600 W PPPM (vs. 1000 W). | Limited to lower-energy transients (e.g., ESD, EFT); insufficient for load dump or high-current inductive switching. | Select SMBJ18AHE3_A/I only if system-level surge testing confirms <600 W requirement and cost optimization is critical. |
| 1.5KE18A | Through-hole DO-201 package, same 18 V VWM, 1000 W rating, but higher RθJA (75 °C/W vs. 72 °C/W) and no AEC-Q101 qualification. | Not suitable for automated SMT assembly or automotive under-hood deployment; requires manual insertion and larger board area. | Choose 1.5KE18A only for legacy through-hole designs or non-automotive industrial applications where AEC-Q101 is not mandated. |
Compared with SMBJ18AHE3_A/I and 1.5KE18A, SMB10J18AHE3_A/I uniquely combines 1000 W surge capability, AEC-Q101 qualification, and SMB SMT packaging-making it the only option that satisfies automotive-grade, high-power, surface-mount transient protection without layout or reliability compromise.
Availability
SMB10J18AHE3_A/I is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial CAN bus nodes, MOSFET gate driver circuits, and 12 V power supply inputs requiring stable component supply across multi-year production cycles.
Supply support for SMB10J18AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and automotive-grade validation.
The SMB10J series belongs to Vishay's TRANSZORB® TVS platform, engineered specifically for high-power, high-reliability transient suppression in automotive and industrial environments where robustness against ISO 7637-2 and ISO 16750-2 threats is mandatory.
FAQ
What is the clamping voltage of SMB10J18AHE3_A/I at its rated peak pulse current?
The SMB10J18AHE3_A/I has a maximum clamping voltage (VC) of 29.2 V when subjected to its peak pulse current (IPPM) of 34.2 A under a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and guarantees predictable overvoltage limiting for protected circuitry. The SMB10J18AHE3_A/I datasheet specifies this parameter in Table 1 under "UNIDIRECTIONAL" electrical characteristics.
Is SMB10J18AHE3_A/I suitable for automotive applications?
Yes, SMB10J18AHE3_A/I is AEC-Q101 qualified and explicitly designated for automotive use via its HE3 suffix and qualification documentation (Document Number 88422). It meets requirements for temperature cycling, humidity resistance, and mechanical shock relevant to engine control, body electronics, and ADAS sensor modules. The SMB10J18AHE3_A/I is rated for TJ = –55 °C to +150 °C and supports MSL Level 1 reflow.
What does the "HE3" suffix indicate in SMB10J18AHE3_A/I?
The "HE3" suffix in SMB10J18AHE3_A/I denotes RoHS-compliant construction with AEC-Q101 qualification and matte tin-plated leads meeting J-STD-002 solderability standards. The "H" indicates AEC-Q101 qualification, "E3" signifies RoHS compliance and commercial-grade reliability, and "_A/I" specifies packaging: 13-inch tape-and-reel (I) with 3200 units per reel. This coding aligns with Vishay's ordering nomenclature in the datasheet's "ORDERING INFORMATION" section.
How does SMB10J18AHE3_A/I differ from bidirectional variants like SMB8J18CA?
SMB10J18AHE3_A/I is unidirectional with cathode marking and 1000 W PPPM, whereas SMB8J18CA is bidirectional (no polarity marking) with 800 W PPPM and symmetric breakdown. The SMB10J18AHE3_A/I offers higher surge capacity and is intended for DC-biased lines (e.g., power rails, sensor outputs), while SMB8J18CA suits AC-coupled or differential lines (e.g., RS-485, CAN). Their VWM, VBR, and VC values differ accordingly.
What is the thermal resistance from junction to ambient for SMB10J18AHE3_A/I?
The typical junction-to-ambient thermal resistance (RθJA) for SMB10J18AHE3_A/I is 72 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as specified in the "THERMAL CHARACTERISTICS" table. This value assumes standard PCB layout per Vishay's recommended pad dimensions and is critical for calculating steady-state temperature rise under leakage or low-duty-cycle surge conditions.
SMB10J18AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 18V
- Voltage - Breakdown (Min):
- 20V
- Voltage - Clamping (Max) @ Ipp:
- 29.2V
- Current - Peak Pulse (10/1000µs):
- 34.2A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J18AHE3_A/I FAQ
1.How can I place an order for SMB10J18AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J18AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J18AHE3_A/I reliable?
The price and inventory of SMB10J18AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J18AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMB10J18AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J18AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J18AHE3_A/I?
SMB10J18AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J18AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J18AHE3_A/I?
For technical support, including SMB10J18AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J18AHE3_A/I requirements.
6.How does Aetrix verify that SMB10J18AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMB10J18AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J18AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMB10J18AHE3_A/I?
All SMB10J18AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J18AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J18AHE3_A/I part is unused and in its original packaging.
Return procedure for SMB10J18AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J18AHE3_A/I Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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