Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMB10J26AHE3_A/H

Part No.:
SMB10J26AHE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMB10J26AHE3_A/H.pdf
Description:
TVS DIODE 26VWM 42.1VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,856

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMB10J26AHE3_A/H from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection with 1000 W peak pulse power (10/1000 µs), 26 V stand-off voltage (VWM), and 42.1 V clamping voltage at 23.8 A peak pulse current. It is AEC-Q101 qualified and used to protect automotive sensor signal lines, MOSFET gates, and microcontroller I/O against inductive switching transients.

For engineers reviewing the SMB10J26AHE3_A/H datasheet, SMB10J26AHE3_A/H pinout, SMB10J26AHE3_A/H application, or SMB10J26AHE3_A/H equivalent, key selection criteria include clamping performance under 10/1000 µs surge, AEC-Q101 qualification status, unidirectional polarity, thermal resistance (RθJA = 72 °C/W), and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.

Technical Context

This TVS diode operates as a voltage-clamped shunt protector, leveraging a glass-passivated silicon junction to achieve sub-nanosecond response time and low incremental surge resistance. Its breakdown voltage is specified at 28.9–31.9 V (min/max) with 1 mA test current, ensuring reliable triggering above system operating voltage while maintaining <1.0 µA reverse leakage at 26 V.

The device is rated for -55 °C to +150 °C junction temperature, meets MSL Level 1 per J-STD-020 (260 °C peak reflow), and uses matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards. Polarity is marked by a cathode band on the SMB package body.

Key Specifications

ParameterValue and Actual Design Meaning
VWM26 V - maximum continuous reverse operating voltage before clamping begins
VBR min/max28.9 V / 31.9 V - breakdown voltage range at 1 mA, defining turn-on threshold tolerance
VC @ IPPM42.1 V - clamping voltage at 23.8 A peak pulse, limiting protected circuit stress during surge
PPPM1000 W - peak pulse power handling capability with 10/1000 µs waveform
RθJA72 °C/W - thermal resistance junction-to-ambient, critical for PCB pad layout design
TJ max+150 °C - maximum junction temperature, enabling operation in under-hood automotive environments
AEC-Q101Qualified - validated for automotive reliability including temperature cycling, HTRB, and ESD

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with cathode band marking; dimensions 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); UL 94 V-0 molding compound; matte tin-plated leads.

Pin/TerminalCircuit RoleDesign Meaning
AnodeCurrent entry terminal in forward biasConnected to protected line's low-side reference (e.g., GND or return path)
CathodeCurrent exit terminal in forward bias; marked with bandConnected to protected node (e.g., MCU input or MOSFET gate) to clamp overvoltage to VWM + VC

Key Features

FeatureDesign Value
Glass-passivated junctionEnsures stable VBR over lifetime and improved moisture resistance vs. epoxy-passivated alternatives
MSL Level 1 ratingEnables standard SMT reflow without pre-baking, reducing manufacturing complexity
AEC-Q101 qualificationValidates suitability for automotive powertrain, body electronics, and ADAS sensor interfaces
Low profile SMB packageMinimizes board space and parasitic inductance, improving high-frequency surge suppression
1000 W peak pulse powerSupports robust protection against ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 surges

Applications

Automotive Sensor ProtectionIndustrial Motor Drive I/O

Use Scenario: Protecting LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) in engine control modules from load dump and inductive kickback.

IC Role / Device Role: Unidirectional shunt TVS placed between signal line and ground, triggered only during positive transients.

Use Value: Limits clamped voltage to 42.1 V, preventing damage to 3.3 V/5 V sensor ICs while surviving >1000 surges per AEC-Q101 stress profile.

Use Scenario: Guarding PLC digital input terminals connected to 24 V DC solenoids and relays subject to repetitive inductive switching spikes.

IC Role / Device Role: Standoff-rated TVS absorbing energy from 10/1000 µs transients up to 1000 W without degradation.

Use Value: Maintains 26 V stand-off margin above 24 V nominal rail, ensuring no false triggering during normal operation.

Automotive Power Supply RailConsumer Device USB Port

Use Scenario: Secondary protection on 12 V battery-fed ECUs where primary TVS or fuse coordination requires tighter clamping than bulk devices provide.

IC Role / Device Role: Localized clamping device placed near sensitive regulators or CAN transceivers.

Use Value: Delivers 42.1 V clamping at 23.8 A, reducing downstream voltage overshoot below IC absolute maximum ratings.

Use Scenario: Surge suppression on VBUS line of USB 2.0 ports in smart home hubs exposed to ESD and cable-induced transients.

IC Role / Device Role: Unidirectional TVS referenced to system ground, absorbing positive-going surges on power line.

Use Value: Achieves <1.0 µA leakage at 26 V, eliminating standby current impact on battery-powered devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ26A-E3/52Same VWM (26 V), same SMB package, but commercial-grade (non-AEC-Q101) and RoHS-compliant onlyLacks automotive qualification; suitable for industrial/commercial designs without AEC requirementsSelect when AEC-Q101 is not mandated and cost sensitivity outweighs automotive validation needs
SMB10J26AHM3_A/HIdentical electrical specs and AEC-Q101 qualification, but halogen-free and RoHS-compliant per JEDEC J-STD-020Same automotive use cases; required where halogen-free material compliance is enforced (e.g., EU auto OEMs)Choose when halogen-free content is mandatory per procurement specification or environmental policy

Compared with SMB10J26AHE3_A/H, SMBJ26A-E3/52 offers identical clamping and packaging but lacks automotive qualification, while SMB10J26AHM3_A/H matches all specs and adds halogen-free compliance-making the HE3 version optimal for general AEC-Q101 applications and HM3 for stricter material mandates.

Availability

SMB10J26AHE3_A/H is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial motor control I/O, and consumer USB power rail protection requiring stable component supply across production lifecycles.

Supply support for SMB10J26AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global supplier of discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability and automotive-grade validation.

The SMB10J series is engineered for high-power-density transient suppression in harsh environments, targeting automotive, industrial, and telecom systems where AEC-Q101 compliance and repeatable clamping performance are essential.

FAQ

What is the clamping voltage of SMB10J26AHE3_A/H at its rated peak pulse current?

The SMB10J26AHE3_A/H has a maximum clamping voltage (VC) of 42.1 V at its peak pulse current (IPPM) of 23.8 A, measured under the standardized 10/1000 µs waveform. This value ensures protected circuits remain within safe voltage limits during surge events. The SMB10J26AHE3_A/H datasheet confirms this parameter is guaranteed across temperature and production lots.

Is SMB10J26AHE3_A/H suitable for automotive applications?

Yes, SMB10J26AHE3_A/H is AEC-Q101 qualified and explicitly designated for automotive use with the "HE3" suffix indicating RoHS-compliant and AEC-Q101 qualified construction. It supports under-hood and cabin applications including sensor protection, body control modules, and infotainment power rails. The SMB10J26AHE3_A/H meets MSL Level 1 and operates from -55 °C to +150 °C.

What is the standoff voltage (VWM) and why does it matter for SMB10J26AHE3_A/H?

The standoff voltage (VWM) of SMB10J26AHE3_A/H is 26 V - the maximum DC or continuous reverse voltage the device can block without entering avalanche conduction. This parameter ensures the SMB10J26AHE3_A/H remains non-conductive during normal operation, avoiding leakage or power loss, while still triggering reliably during transients exceeding this threshold.

How does the SMB10J26AHE3_A/H package compare to SMA or SMC variants?

The SMB10J26AHE3_A/H uses the SMB (DO-214AA) package, measuring 4.57 mm × 3.94 mm × 2.20 mm - smaller than SMC (DO-214AB) but larger than SMA (DO-214AC). Its 72 °C/W junction-to-ambient thermal resistance balances power handling and board space. Unlike SMA, SMB supports higher PPPM (1000 W vs. 400 W for SMAJ26A), making SMB10J26AHE3_A/H appropriate for medium-energy surge scenarios.

What is the meaning of the "_A/H" suffix in SMB10J26AHE3_A/H?

The "_A/H" suffix in SMB10J26AHE3_A/H denotes the revision code ("A") and packaging configuration ("H" = 7" tape-and-reel, 750 units per reel). This aligns with Vishay's ordering nomenclature where "HE3" indicates AEC-Q101 qualification and RoHS compliance, and "_A/H" specifies manufacturing revision and delivery format. The SMB10J26AHE3_A/H part is fully traceable and conforms to JESD201 Class 2 whisker resistance.

SMB10J26AHE3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
26V
Voltage - Breakdown (Min):
28.9V
Voltage - Clamping (Max) @ Ipp:
42.1V
Current - Peak Pulse (10/1000µs):
23.8A
Power - Peak Pulse:
1000W (1kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SMB10J26AHE3_A/H FAQ

1.How can I place an order for SMB10J26AHE3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for SMB10J26AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMB10J26AHE3_A/H reliable?

The price and inventory of SMB10J26AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J26AHE3_A/H is usually 5 days.

3.What payment methods are accepted for SMB10J26AHE3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J26AHE3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMB10J26AHE3_A/H?

SMB10J26AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMB10J26AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMB10J26AHE3_A/H?

For technical support, including SMB10J26AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J26AHE3_A/H requirements.

6.How does Aetrix verify that SMB10J26AHE3_A/H is sourced from the original manufacturer or authorized distributors?

All SMB10J26AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J26AHE3_A/H meets industry standards.

7.What is the process for return or replacement of SMB10J26AHE3_A/H?

All SMB10J26AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J26AHE3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMB10J26AHE3_A/H part is unused and in its original packaging.

Return procedure for SMB10J26AHE3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMB10J26AHE3_A/H Tags

  • SMB10J26AHE3_A/H
  • SMB10J26AHE3_A/H PDF
  • SMB10J26AHE3_A/H Datasheet
  • SMB10J26AHE3_A/H Specifications
  • SMB10J26AHE3_A/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMB10J26AHE3_A/H
  • Buy SMB10J26AHE3_A/H
  • SMB10J26AHE3_A/H Price
  • SMB10J26AHE3_A/H Distributor
  • SMB10J26AHE3_A/H Supplier
  • SMB10J26AHE3_A/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER