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Vishay General Semiconductor - Diodes Division SMB10J33AHE3_A/I
- Part No.:
- SMB10J33AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J33AHE3_A/I.pdf
- Description:
- TVS DIODE 33VWM 53.3VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:9,503
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Product details
Overview
SMB10J33AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection on power and signal lines. It features a 33 V stand-off voltage (VWM), 36.7–40.6 V breakdown voltage (VBR) at 1 mA, 53.3 V clamping voltage (VC) at 18.8 A peak pulse current (IPPM), and 1000 W peak pulse power (PPPM) with 10/1000 µs waveform - deployed in automotive ECUs, industrial sensor interfaces, and DC power rail protection.
For engineers reviewing the SMB10J33AHE3_A/I datasheet, SMB10J33AHE3_A/I pinout, SMB10J33AHE3_A/I application, or SMB10J33AHE3_A/I equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance data, clamping performance under surge, and real-world design context for ESD and load-switching transient suppression.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR (36.7–40.6 V), it avalanches to divert surge current away from downstream ICs or MOSFETs. Its glass-passivated junction ensures stable breakdown and low leakage (<1.0 µA at VWM = 33 V), while MSL Level 1 rating supports lead-free reflow up to 260 °C.
Thermal design is enabled by RθJA = 72 °C/W and RθJL = 20 °C/W, with derating above 25 °C per Fig. 2. The device sustains 100 A non-repetitive forward surge (IFSM, 8.3 ms half-sine) and meets ANSI/IEEE C62.35 standards for transient suppression waveforms.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - maximum continuous reverse operating voltage before significant leakage; defines safe DC bias margin for protected line |
| VBR (min/max) | 36.7 V / 40.6 V at IT = 1 mA - tight breakdown window ensures predictable turn-on during transients |
| VC @ IPPM | 53.3 V at 18.8 A - clamping voltage limits stress on downstream components during 10/1000 µs surge |
| PPPM | 1000 W - peak power handling capability with standard 10/1000 µs waveform, critical for IEC 61000-4-5 compliance |
| ID @ VWM | <1.0 µA - ultra-low reverse leakage preserves signal integrity and minimizes standby power loss |
| TJ max | +150 °C - enables operation in under-hood automotive and high-temperature industrial environments |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / surge return path | Connected to ground or low-impedance return in unidirectional configuration; must be routed with low-inductance path |
| Cathode | Protected line connection / surge sink | Connected to line being protected (e.g., 33 V rail); color band identifies this terminal |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive electronics including engine control, ADAS sensors, and body modules |
| Low incremental surge resistance | Enables tighter clamping (VC = 53.3 V) without excessive voltage overshoot during fast transients |
| Glass passivated junction | Ensures long-term stability of VBR and leakage across temperature and lifetime stress |
| MSL Level 1, 260 °C peak | Supports standard lead-free reflow without popcorn or delamination risk |
| UL 94 V-0 molding compound | Meets flammability requirements for enclosed industrial and automotive enclosures |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 33 V supply rails in engine control units against load-dump and alternator ripple transients. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed between rail and chassis ground, activated within nanoseconds of overvoltage event. Use Value: Limits rail voltage to ≤53.3 V during 1000 W surges, preventing damage to MCU, CAN transceivers, and power management ICs. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA, 0–10 V) from ESD and inductive kickback in factory automation sensors. IC Role / Device Role / Timing Role: Bidirectional-capable protection element (though SMB10J33AHE3_A/I is unidirectional, used with series impedance for signal line placement). Use Value: Clamps transients to 53.3 V while maintaining <1.0 µA leakage, preserving signal accuracy and ADC reference stability. |
| DC-DC Converter Input Protection | Telecom Power Interface Protection |
Use Scenario: Front-end surge suppression on 24–48 V input of isolated DC-DC converters in PoE-powered equipment. IC Role / Device Role / Timing Role: Primary clamping device upstream of input filter and controller IC, absorbing energy before LC filtering. Use Value: Handles 18.8 A peak pulse current with 72 °C/W thermal resistance, enabling compact PCB layout without forced air cooling. |
Use Scenario: Protecting telecom power interface cards (e.g., -48 V backplane inputs) from lightning-induced surges and hot-swap transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between -48 V rail and return, referenced to system ground with controlled trace inductance. Use Value: AEC-Q101 qualification and 150 °C max junction temperature support extended field life in uncooled telecom cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33AHE3_A/I | Same SMB package, identical VWM/VBR/VC specs, but rated for 600 W PPPM (vs. 1000 W) | Limited to lower-energy transients; insufficient for IEC 61000-4-5 Level 4 compliance | Select SMB10J33AHE3_A/I when full 1000 W surge handling is required; SMBJ33AHE3_A/I suits cost-sensitive, lower-risk applications |
| SMCJ33AHE3_A/I | Same electrical specs but in larger SMC (DO-214AB) package; RθJA = 35 °C/W (vs. 72 °C/W) | Higher thermal mass allows sustained surge duty cycles; requires ~2.5× more board area | Choose SMB10J33AHE3_A/I for space-constrained designs where 1000 W single-pulse capability suffices; SMCJ33AHE3_A/I preferred for repetitive surge scenarios |
Compared with SMBJ33AHE3_A/I and SMCJ33AHE3_A/I, SMB10J33AHE3_A/I uniquely balances 1000 W surge capacity, SMB footprint, and AEC-Q101 qualification - making it optimal for automotive and industrial applications demanding high power density and automotive-grade reliability.
Availability
SMB10J33AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom power interface designs requiring stable component supply, AEC-Q101 validation, and consistent 1000 W transient suppression performance.
Supply support for SMB10J33AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMB10JxxA family targets high-power-density transient suppression in automotive and industrial systems, engineered to meet AEC-Q101 and deliver precise clamping with minimal board space overhead.
FAQ
What is the clamping voltage of SMB10J33AHE3_A/I at its rated peak pulse current?
The SMB10J33AHE3_A/I has a maximum clamping voltage (VC) of 53.3 V at 18.8 A peak pulse current (IPPM), measured with a 10/1000 µs waveform. This value defines the upper voltage limit imposed on the protected circuit during surge events and is critical for ensuring downstream ICs remain within absolute maximum ratings. The SMB10J33AHE3_A/I maintains this clamping performance across its qualified operating temperature range.
Is SMB10J33AHE3_A/I suitable for automotive applications?
Yes, SMB10J33AHE3_A/I is AEC-Q101 qualified and explicitly designated for automotive use with the "HE3" suffix. It undergoes stress testing for temperature cycling, high-temperature reverse bias, and ESD robustness per automotive standards. Its 150 °C max junction temperature, MSL Level 1 rating, and RoHS-compliant construction make SMB10J33AHE3_A/I appropriate for engine control, body electronics, and ADAS sensor modules.
How does the thermal resistance of SMB10J33AHE3_A/I affect PCB layout?
SMB10J33AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 72 °C/W when mounted on 0.2" × 0.2" copper pads per terminal. To maintain safe junction temperatures during repeated surges, designers must provide adequate copper area and avoid thermal bottlenecks. Reducing pad size or omitting thermal vias increases RθJA, risking thermal runaway - so SMB10J33AHE3_A/I layout must follow Vishay's recommended mounting pad dimensions.
What is the reverse leakage current of SMB10J33AHE3_A/I at its stand-off voltage?
At its 33 V stand-off voltage (VWM), the SMB10J33AHE3_A/I exhibits a maximum reverse leakage current (ID) of 1.0 µA at 25 °C. This ultra-low leakage preserves signal integrity on sensitive analog or communication lines and minimizes power loss in always-on systems. Leakage remains below 5 µA up to +125 °C, supporting reliable operation in harsh thermal environments.
Can SMB10J33AHE3_A/I be used in bidirectional configurations?
No - SMB10J33AHE3_A/I is a unidirectional TVS diode, identified by cathode band marking. For bidirectional protection, Vishay offers the SMB8J33CAHE3_A/I variant (800 W PPPM, same VWM/VBR). Using SMB10J33AHE3_A/I in reverse-biased orientation does not provide symmetrical clamping and may fail catastrophically under positive-going transients on the anode side. Always match device polarity to circuit topology.
SMB10J33AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- 18.8A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J33AHE3_A/I FAQ
1.How can I place an order for SMB10J33AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J33AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J33AHE3_A/I reliable?
The price and inventory of SMB10J33AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J33AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMB10J33AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J33AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J33AHE3_A/I?
SMB10J33AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J33AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J33AHE3_A/I?
For technical support, including SMB10J33AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J33AHE3_A/I requirements.
6.How does Aetrix verify that SMB10J33AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMB10J33AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J33AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMB10J33AHE3_A/I?
All SMB10J33AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J33AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J33AHE3_A/I part is unused and in its original packaging.
Return procedure for SMB10J33AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J33AHE3_A/I Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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