Vishay General Semiconductor - Diodes Division SMB10J33AHE3_B/I
- Part No.:
- SMB10J33AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J33AHE3_B/I.pdf
- Description:
- 1KW,33V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,216
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Product details
Overview
SMB10J33AHE3_B/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection with 33 V stand-off voltage (VWM), 36.7–40.6 V breakdown voltage (VBR), and 1000 W peak pulse power (PPPM) at 10/1000 µs waveform. It clamps transients to ≤53.3 V at 18.8 A peak pulse current and is AEC-Q101 qualified for automotive electronics.
For engineers reviewing the SMB10J33AHE3_B/I datasheet, SMB10J33AHE3_B/I pinout, SMB10J33AHE3_B/I application, or SMB10J33AHE3_B/I equivalent, this device is selected for robust overvoltage protection on power rails and signal lines where fast response (<1 ns), low clamping ratio (VC/VBR ≈ 1.42), and automotive-grade reliability are required.
Technical Context
This TVS diode operates as a silicon avalanche diode with glass-passivated junction, delivering sub-nanosecond response to ESD and lightning-induced surges. Its unidirectional polarity enables DC rail protection with cathode-band identification, and it meets J-STD-020 MSL Level 1 with 260 °C reflow peak tolerance.
The device exhibits 72 °C/W junction-to-ambient thermal resistance and 20 °C/W junction-to-lead resistance, enabling stable operation up to +150 °C junction temperature. It supports 100 A non-repetitive forward surge current (IFSM) and maintains <1.0 µA reverse leakage at 33 V (VWM).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 36.7 V / 40.6 V - guaranteed avalanche breakdown range at 1.0 mA test current |
| VC @ IPPM | 53.3 V - clamped voltage at 18.8 A peak pulse current, defining worst-case surge suppression level |
| PPPM | 1000 W - peak pulse power handling capability under standardized 10/1000 µs waveform |
| ID @ VWM | ≤1.0 µA - ultra-low reverse leakage ensures minimal standby power loss in battery-critical systems |
| TJ max | +150 °C - maximum junction temperature rating enabling use in under-hood automotive environments |
| AEC-Q101 | Qualified - validated for automotive applications including engine control, body electronics, and ADAS sensors |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side of protected circuit (e.g., ground or return path) |
| Cathode | Avalanche clamping terminal | Connected to higher-potential side (e.g., 33 V rail); color band identifies this terminal |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable, repeatable avalanche characteristics and long-term reliability under repeated surge stress |
| AEC-Q101 qualification | Validates performance across automotive temperature, vibration, and lifetime requirements without derating |
| MSL Level 1 compliance | Enables direct placement into standard SMT reflow processes without moisture sensitivity concerns |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients, improving system-level ESD immunity |
| UL 94 V-0 molding compound | Provides flame-retardant housing essential for automotive and industrial safety certifications |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 3.3 V or 5 V microcontroller supply rails in engine control units (ECUs) against load-dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VCC and GND to clamp positive-going transients before they reach sensitive logic. Use Value: Limits voltage excursion to ≤53.3 V while absorbing 1000 W surges, preventing latch-up or permanent damage to MCU I/O and power domains. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loop) from ESD events in factory automation sensors. IC Role / Device Role / Timing Role: Bidirectional-capable variant not used here; SMB10J33AHE3_B/I serves as unidirectional clamp on powered signal lines referenced to local ground. Use Value: Sub-ns response and 1.0 µA leakage preserve signal integrity and minimize offset error in precision measurement circuits. |
| Automotive Body Control Module (BCM) | Telecom Power Interface Protection |
|
Use Scenario: Shielding LIN bus transceiver power pins from battery transients during jump-start or alternator load dump. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 12 V input rail feeding BCM power management ICs. Use Value: Withstands 100 A IFSM and maintains clamping performance after repeated 10/1000 µs surges per AEC-Q101 stress profiles. |
Use Scenario: Front-end protection for PoE-powered network switches exposed to induced surges on DC input lines. IC Role / Device Role / Timing Role: Standoff-rated TVS on 48 V input stage, coordinating with upstream fuses and downstream DC/DC converters. Use Value: 33 V VWM aligns with PoE+ hold-up voltage margins, while 1000 W PPPM handles telecom-grade lightning surge standards (IEC 61000-4-5). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33AHE3_A/H | Same VWM (33 V), identical SMB package, but rated for 600 W PPPM (vs. 1000 W) | Limited to lower-energy surge environments (e.g., consumer USB ports vs. automotive 12 V rails) | Select when cost optimization is prioritized and surge energy remains below 600 W threshold |
| 1.5SMC33AHE3_A | Higher-power SMC package (1500 W PPPM), same VWM and VBR range, larger footprint (7.11 × 6.22 mm vs. 4.57 × 3.94 mm) | Used where PCB space allows and higher single-pulse energy absorption is mandatory (e.g., industrial AC/DC front ends) | Choose when board layout permits larger package and system-level surge testing exceeds 1000 W |
Compared with SMBJ33AHE3_A/H and 1.5SMC33AHE3_A, SMB10J33AHE3_B/I delivers optimal balance of 1000 W surge capacity, compact SMB footprint, and AEC-Q101 qualification-making it the preferred choice for space-constrained automotive and industrial DC power protection where both reliability and power density matter.
Availability
SMB10J33AHE3_B/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, and telecom power supplies requiring stable component supply with full traceability and AEC-Q101 assurance.
Supply support for SMB10J33AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific validation.
The SMB10J series is engineered for high-power-density transient suppression in harsh environments, targeting automotive, industrial, and telecom systems where compact size, AEC-Q101 compliance, and consistent clamping performance are critical.
FAQ
What is the clamping voltage of SMB10J33AHE3_B/I at its rated peak pulse current?
The SMB10J33AHE3_B/I clamps to a maximum of 53.3 V when subjected to its specified peak pulse current of 18.8 A (10/1000 µs waveform). This VC value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The clamping ratio (VC/VBR) is approximately 1.42, indicating efficient voltage limiting relative to its breakdown range.
Is SMB10J33AHE3_B/I suitable for bidirectional transient protection?
No, SMB10J33AHE3_B/I is a unidirectional TVS diode, intended for DC circuits where polarity is fixed (e.g., 33 V supply rail to ground). For bidirectional protection-such as AC lines or data buses-Vishay's SMB8J33CAHE3_B/I (same VWM, 800 W PPPM, bidirectional) is the functionally matched counterpart. The "J" suffix in SMB10J33AHE3_B/I explicitly denotes unidirectional construction.
What does the "HE3_B/I" suffix indicate in SMB10J33AHE3_B/I?
The "HE3" suffix signifies RoHS-compliant construction with AEC-Q101 qualification; "B" denotes the revision code; and "I" specifies packaging in 13-inch tape-and-reel format with 3200 units per reel. This ordering code ensures full compliance with automotive reliability standards and supports high-volume SMT assembly without moisture sensitivity concerns (MSL Level 1).
How does SMB10J33AHE3_B/I perform under elevated ambient temperatures?
SMB10J33AHE3_B/I derates linearly above 25 °C ambient: its peak pulse power drops to ~700 W at +85 °C and ~400 W at +125 °C, per Figure 2 in the datasheet. The device maintains full functionality up to +150 °C junction temperature, but design must ensure adequate copper pad area (0.2″ × 0.2″ recommended) and thermal relief to sustain required surge ratings in hot environments.
Can SMB10J33AHE3_B/I replace older SMBJ33A variants in existing designs?
SMB10J33AHE3_B/I is not a direct drop-in replacement for SMBJ33A due to higher PPPM (1000 W vs. 600 W) and tighter VBR tolerance (36.7–40.6 V vs. 36.7–42.2 V), though both share SMB package and pinout. Layout compatibility exists, but system-level surge testing must confirm whether the increased clamping energy alters protection behavior-especially in fuse-coordinated circuits where higher IPPM may affect let-through energy.
SMB10J33AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- 18.8A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J33AHE3_B/I FAQ
1.How can I place an order for SMB10J33AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J33AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J33AHE3_B/I reliable?
The price and inventory of SMB10J33AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J33AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMB10J33AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J33AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J33AHE3_B/I?
SMB10J33AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J33AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J33AHE3_B/I?
For technical support, including SMB10J33AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J33AHE3_B/I requirements.
6.How does Aetrix verify that SMB10J33AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMB10J33AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J33AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMB10J33AHE3_B/I?
All SMB10J33AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J33AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J33AHE3_B/I part is unused and in its original packaging.
Return procedure for SMB10J33AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J33AHE3_B/I Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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