Vishay General Semiconductor - Diodes Division SMB10J33AHM3_B/I
- Part No.:
- SMB10J33AHM3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J33AHM3_B/I.pdf
- Description:
- 1KW,33V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:9,377
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Product details
Overview
SMB10J33AHM3_B/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection in automotive and industrial power rails. It features a 33 V stand-off voltage (VWM), 36.7–40.6 V breakdown voltage (VBR) at 1 mA, 1000 W peak pulse power (10/1000 µs), 18.8 A peak pulse current (IPPM), and clamps to ≤53.3 V under surge conditions. Used to protect MOSFETs, microcontrollers, and sensor interfaces against inductive switching transients.
For engineers reviewing the SMB10J33AHM3_B/I datasheet, SMB10J33AHM3_B/I pinout, SMB10J33AHM3_B/I application, or SMB10J33AHM3_B/I equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, thermal resistance (RθJA = 72 °C/W), junction temperature range (–55 to +150 °C), and halogen-free RoHS-compliant construction - all critical for automotive-grade ESD/surge design validation.
Technical Context
This TVS diode operates as a clamping device in parallel with sensitive circuit nodes, entering avalanche conduction when reverse voltage exceeds VBR. Its glass-passivated junction ensures stable breakdown behavior and low leakage (<1.0 µA at VWM = 33 V), while the low incremental surge resistance enables rapid energy diversion during 10/1000 µs transients.
Rated for 100 A non-repetitive forward surge current (IFSM), it supports robust protection of DC power inputs and signal lines. The SMB package provides MSL Level 1 moisture sensitivity and 260 °C lead-free reflow compatibility, meeting J-STD-020 and JESD201 Class 2 whisker resistance requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - maximum continuous reverse operating voltage before clamping begins; defines safe DC bias margin for protected line |
| VBR (min/max) | 36.7 V / 40.6 V at IT = 1 mA - precise breakdown threshold ensuring predictable turn-on during overvoltage events |
| VC @ IPPM | ≤53.3 V at IPPM = 18.8 A - clamping voltage limits stress on downstream ICs during 1000 W surge |
| PPPM | 1000 W (10/1000 µs waveform) - high energy absorption capacity suitable for automotive load-dump and ISO 7637-2 compliance |
| ID @ VWM | ≤1.0 µA - ultra-low leakage preserves battery life and avoids false triggering in low-power sensor circuits |
| TJ max. | +150 °C - enables operation in under-hood automotive environments and industrial enclosures without derating |
| RθJA | 72 °C/W - thermal resistance measured on 0.2" × 0.2" copper pads; informs PCB thermal layout for sustained surge duty |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, AEC-Q101 qualified. Cathode indicated by black band on case end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference node | Connected to ground or low-impedance return path; forms clamping loop with cathode |
| Cathode | Protected line connection | Connected to input rail (e.g., 24 V battery feed); conducts avalanche current to anode during overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units, body electronics, and ADAS sensors |
| Glass passivated junction | Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity exposure |
| MSL Level 1 rating | Allows unlimited floor life and full 260 °C lead-free reflow without baking or special handling |
| Halogen-free construction | Complies with IEC 61249-2-21 and automotive OEM material restrictions (e.g., GMW3172, Ford WSS-M99P9999-A1) |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes overvoltage overshoot during fast transients, reducing risk of latch-up or gate oxide damage |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: 24 V battery-fed ECUs exposed to ISO 7637-2 Pulse 1 (inductive switch-off) and Pulse 5a (load dump). IC Role / Device Role: Unidirectional TVS placed between battery rail and input filter capacitor to clamp surges before LDO/regulator input. Use Value: Withstands 1000 W pulses and clamps to ≤53.3 V, preventing regulator overvoltage shutdown and preserving system uptime. |
Use Scenario: Analog output lines (e.g., 4–20 mA current loop) from pressure/temperature sensors in factory automation PLCs. IC Role / Device Role: TVS mounted at connector entry point to shunt ESD (IEC 61000-4-2 ±8 kV contact) and cable discharge events. Use Value: Sub-1 µA leakage at 33 V avoids loading precision current sources; fast response protects op-amp inputs from latch-up. |
| DC Motor Drive Gate Protection | On-Board Charger (OBC) DC Link Protection |
|
Use Scenario: High-side N-channel MOSFET gates driven by isolated gate drivers in BLDC motor controllers. IC Role / Device Role: TVS across gate-to-source to suppress Miller-induced voltage spikes during fast switching transitions. Use Value: Low RθJA and 18.8 A IPPM enable reliable suppression of >100 V spikes without thermal runaway or parameter drift. |
Use Scenario: 400 V DC link in electric vehicle on-board chargers subject to regenerative braking transients and grid coupling noise. IC Role / Device Role: TVS array (multiple SMB10J33AHM3_B/I) placed across bus capacitors to limit overvoltage during fault clearing. Use Value: 150 °C TJ max and AEC-Q101 qualification ensure sustained reliability in high-temperature OBC enclosures (>105 °C ambient). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33AHE3_A/H | Same VWM (33 V), VBR (36.7–40.6 V), PPPM (1000 W), but RoHS-compliant commercial grade (not AEC-Q101 qualified); no halogen-free marking | Lacks automotive qualification; unsuitable for safety-critical or OEM-specified automotive designs | Select when cost-sensitive industrial or consumer applications require identical clamping performance without automotive certification |
| SMCJ33A-Q | Higher power rating (1500 W), larger SMC (DO-214AB) package, same VWM/VBR range; AEC-Q101 qualified | Requires larger PCB footprint and higher mounting pad area (0.375" × 0.375"); better suited for >1000 W surge requirements | Choose when system-level surge testing exceeds 1000 W or when board space allows larger package for enhanced thermal margin |
Compared with SMBJ33AHE3_A/H, SMB10J33AHM3_B/I adds AEC-Q101 qualification and halogen-free compliance for automotive use; compared with SMCJ33A-Q, it trades 500 W peak power for 30% smaller SMB footprint and lower RθJA - optimizing space-constrained, thermally managed automotive modules.
Availability
SMB10J33AHM3_B/I is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and DC motor drive protection requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SMB10J33AHM3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power density, and automotive-grade qualification.
The SMB10J series is engineered for high-power-density transient suppression in harsh environments, targeting automotive, industrial, and telecom infrastructure where AEC-Q101 compliance and low-profile packaging are mandatory.
FAQ
What is the clamping voltage of SMB10J33AHM3_B/I at its rated peak pulse current?
The SMB10J33AHM3_B/I clamps to a maximum of 53.3 V when subjected to its rated peak pulse current of 18.8 A (10/1000 µs waveform). This value is measured per ANSI/IEEE C62.35 standards and ensures downstream components like 3.3 V or 5 V logic remain within safe operating voltage margins during surge events. The clamping performance is guaranteed across the full operating temperature range of –55 to +150 °C.
Is SMB10J33AHM3_B/I suitable for automotive applications?
Yes, SMB10J33AHM3_B/I is AEC-Q101 qualified and manufactured with halogen-free, RoHS-compliant materials - meeting stringent automotive reliability and environmental requirements. Its construction includes glass-passivated junctions, MSL Level 1 moisture sensitivity, and validated performance across –55 to +150 °C junction temperature, making it appropriate for engine control, body electronics, and ADAS subsystems where certified surge protection is mandated.
What does the "HM3_B/I" suffix indicate in SMB10J33AHM3_B/I?
The "HM3" suffix denotes halogen-free, RoHS-compliant construction with AEC-Q101 qualification; "B" indicates tape-and-reel packaging per EIA-481 standard; and "I" specifies 3200-unit quantity on 13-inch diameter reels. This full ordering code confirms the part meets automotive material compliance, thermal reliability, and automated assembly requirements - distinct from commercial-grade variants like E3 or M3.
How does SMB10J33AHM3_B/I compare to SMBJ33A in terms of surge capability?
SMB10J33AHM3_B/I and SMBJ33A share identical electrical parameters (VWM = 33 V, VBR = 36.7–40.6 V, VC ≤ 53.3 V, PPPM = 1000 W), but SMB10J33AHM3_B/I adds AEC-Q101 qualification and halogen-free compliance. SMBJ33A is commercial-grade only. Both use the SMB package, but SMB10J33AHM3_B/I undergoes additional automotive stress testing including temperature cycling, HAST, and mechanical shock per AEC-Q101 Rev D.
What is the maximum reverse leakage current for SMB10J33AHM3_B/I at its stand-off voltage?
The maximum reverse leakage current (ID) for SMB10J33AHM3_B/I is 1.0 µA when biased at its stand-off voltage of 33 V and tested at 25 °C. This ultra-low leakage ensures minimal power loss in always-on automotive modules and avoids interference with high-impedance sensor signal paths. Leakage remains below 5 µA up to +125 °C, supporting reliable operation in under-hood environments.
SMB10J33AHM3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- 18.8A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J33AHM3_B/I FAQ
1.How can I place an order for SMB10J33AHM3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J33AHM3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J33AHM3_B/I reliable?
The price and inventory of SMB10J33AHM3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J33AHM3_B/I is usually 5 days.
3.What payment methods are accepted for SMB10J33AHM3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J33AHM3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J33AHM3_B/I?
SMB10J33AHM3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J33AHM3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J33AHM3_B/I?
For technical support, including SMB10J33AHM3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J33AHM3_B/I requirements.
6.How does Aetrix verify that SMB10J33AHM3_B/I is sourced from the original manufacturer or authorized distributors?
All SMB10J33AHM3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J33AHM3_B/I meets industry standards.
7.What is the process for return or replacement of SMB10J33AHM3_B/I?
All SMB10J33AHM3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J33AHM3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J33AHM3_B/I part is unused and in its original packaging.
Return procedure for SMB10J33AHM3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J33AHM3_B/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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