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Vishay General Semiconductor - Diodes Division SMB10J36AHE3_A/I
- Part No.:
- SMB10J36AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J36AHE3_A/I.pdf
- Description:
- TVS DIODE 36VWM 58.1VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:9,091
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Product details
Overview
SMB10J36AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection on power and signal lines. It features a 36 V stand-off voltage (VWM), 40.0–44.2 V breakdown voltage (VBR), 58.1 V clamping voltage (VC) at 17.2 A peak pulse current (IPPM), and 1000 W peak pulse power (PPPM) with 10/1000 µs waveform - deployed in automotive ECUs, industrial sensor interfaces, and DC power input stages.
For engineers reviewing the SMB10J36AHE3_A/I datasheet, SMB10J36AHE3_A/I pinout, SMB10J36AHE3_A/I application, or SMB10J36AHE3_A/I equivalent, key selection criteria include AEC-Q101 qualification, unidirectional polarity with cathode band marking, low incremental surge resistance, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode uses a glass-passivated silicon junction to achieve fast response time (<1 ns) and stable clamping under repetitive transients. Its unidirectional configuration enables integration into DC-biased circuits where reverse conduction must be blocked while suppressing positive-going surges.
Thermal performance is defined by RθJA = 72 °C/W (typ.) and RθJL = 20 °C/W (typ.), supporting operation up to +150 °C junction temperature. The device meets MSL Level 1 per J-STD-020 and is qualified to AEC-Q101 for automotive under-hood applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 36 V - maximum continuous reverse operating voltage before clamping begins; sets safe DC bias margin for protected line. |
| VBR (min/max) | 40.0 V / 44.2 V at 1 mA - guaranteed breakdown threshold range ensures consistent turn-on across production lots. |
| VC @ IPPM | 58.1 V at 17.2 A - clamping voltage during 10/1000 µs surge defines worst-case overvoltage seen by downstream ICs. |
| PPPM | 1000 W - peak pulse power handling capacity determines survivability against IEC 61000-4-5 Level 4 surges. |
| ID @ VWM | 1.0 µA - ultra-low leakage preserves efficiency in battery-powered or high-impedance sensing nodes. |
| TJ max. | +150 °C - enables deployment in engine control units and motor drive inverters without derating. |
| AEC-Q101 | Qualified - certified for automotive-grade reliability including temperature cycling, HTRB, and ESD stress testing. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by color band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry terminal | Connected to lower-potential side of protected line (e.g., GND or return path); conducts only during forward surge events. |
| Cathode | Reverse-biased clamping terminal | Connected to higher-potential side (e.g., +12 V rail); initiates avalanche conduction when transient exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive under-hood use with full stress test compliance (HTGB, TCT, H3TRB). |
| Glass-passivated junction | Ensures stable VBR over lifetime and immunity to humidity-induced parameter drift in harsh environments. |
| MSL Level 1 rating | Allows unlimited floor life and reflow at 260 °C peak without preconditioning - simplifies SMT manufacturing. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage overshoot during surge events, reducing stress on downstream MOSFETs and microcontrollers. |
| 1000 W peak pulse power | Supports IEC 61000-4-5 combination wave (2 Ω/12 Ω) testing at Level 4 (4 kV line-earth, 2 kV line-line). |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Clamp |
|---|---|
Use Scenario: 12 V battery feed to body control module exposed to load dump and jump-start transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBAT and GND to clamp positive surges above 36 V. Use Value: Limits voltage to ≤58.1 V during 1000 W surges, protecting LDO regulators and CAN transceivers rated for 40 V absolute max. |
Use Scenario: Analog output line (0–10 V) from pressure sensor in factory automation PLC rack. IC Role / Device Role / Timing Role: TVS mounted at connector interface to absorb ESD and inductive kickback from nearby solenoid switching. Use Value: Sub-1 ns response prevents >58.1 V spikes from damaging 12-bit ADC front-end, preserving measurement integrity. |
| DC-DC Converter Input Stage | Telecom Power Supply Surge Guard |
Use Scenario: 48 V input to isolated buck converter powering PoE switch controller board. IC Role / Device Role / Timing Role: Primary surge suppression device upstream of input filter capacitor and rectifier stage. Use Value: Withstands repeated 10/1000 µs surges up to 17.2 A, maintaining system uptime in outdoor telecom cabinets. |
Use Scenario: -48 V DC distribution bus in central office power shelf subject to lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional clamp referenced to system ground, absorbing common-mode transients coupled onto supply rails. Use Value: 1.0 µA leakage avoids loading sensitive -48 V monitoring circuitry while delivering 1000 W surge dissipation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ36AHE3_A/I | Same VWM (36 V), but lower PPPM (600 W) and VC = 58.1 V at 10.3 A IPPM. | Lower energy handling limits suitability to consumer-grade or non-automotive industrial use. | Select when cost sensitivity outweighs need for 1000 W surge margin and AEC-Q101 is not required. |
| SMCJ36AHE3_A/I | Same VWM and AEC-Q101 rating, but larger SMC (DO-214AB) package with 1500 W PPPM and VC = 58.1 V at 25.8 A. | Higher power handling supports longer-duration surges but requires larger PCB footprint and thermal relief. | Choose when system-level surge testing exceeds IEC 61000-4-5 Level 4 or when layout allows SMC footprint. |
Compared with SMBJ36AHE3_A/I, SMB10J36AHE3_A/I delivers 67 % higher peak pulse power without increasing clamping voltage; versus SMCJ36AHE3_A/I, it achieves identical clamping performance in 30 % smaller area - optimizing space-constrained automotive modules.
Availability
SMB10J36AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom power supply designs requiring stable component supply with AEC-Q101 assurance and long-term lifecycle support.
Supply support for SMB10J36AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SMB10J series targets high-power-density transient protection in space-constrained automotive and industrial systems, emphasizing AEC-Q101 compliance, low-profile packaging, and repeatable clamping performance under thermal stress.
FAQ
What is the clamping voltage of SMB10J36AHE3_A/I at its rated peak pulse current?
The SMB10J36AHE3_A/I has a maximum clamping voltage (VC) of 58.1 V when subjected to its rated peak pulse current of 17.2 A using the standard 10/1000 µs waveform. This value is measured under specified test conditions (TA = 25 °C, mounted on 5.0 mm × 5.0 mm copper pads) and defines the upper voltage limit imposed on protected circuitry during surge events. The SMB10J36AHE3_A/I maintains this clamping performance across its full operating temperature range.
Is SMB10J36AHE3_A/I suitable for automotive applications?
Yes, SMB10J36AHE3_A/I is AEC-Q101 qualified and specifically designed for automotive use, including engine control units, body electronics, and ADAS sensor modules. Its construction includes glass-passivated junctions, MSL Level 1 moisture sensitivity rating, and operation up to +150 °C junction temperature - all validated per AEC stress test requirements. The HE3 suffix confirms RoHS-compliant and AEC-Q101-qualified status for SMB10J36AHE3_A/I.
How does the SMB10J36AHE3_A/I differ from the SMBJ36AHE3_A/I in terms of surge capability?
SMB10J36AHE3_A/I delivers 1000 W peak pulse power (PPPM) versus 600 W for SMBJ36AHE3_A/I - a 67 % increase - while maintaining identical clamping voltage (58.1 V) and stand-off voltage (36 V). This higher energy rating enables SMB10J36AHE3_A/I to survive more severe transients such as ISO 7637-2 Pulse 5a (load dump) without degradation. Both share the same SMB package and AEC-Q101 qualification.
What is the polarity configuration of SMB10J36AHE3_A/I?
SMB10J36AHE3_A/I is a unidirectional TVS diode, meaning it functions as a Zener-like clamp for positive transients only and blocks reverse current like a standard diode. Polarity is marked by a cathode band on the package body, which must be oriented toward the higher-potential side of the protected line. This configuration is appropriate for DC-biased circuits such as automotive 12 V supplies and industrial 24 V control inputs.
Does SMB10J36AHE3_A/I require special PCB layout considerations?
Yes - optimal performance of SMB10J36AHE3_A/I requires mounting on minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal to meet its rated 1000 W PPPM. Thermal vias under pads improve heat dissipation during repetitive surges. Trace inductance must be minimized between the SMB10J36AHE3_A/I and protected IC; keep leads short and wide. The cathode band orientation must match schematic polarity to ensure correct clamping direction.
SMB10J36AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36V
- Voltage - Breakdown (Min):
- 40V
- Voltage - Clamping (Max) @ Ipp:
- 58.1V
- Current - Peak Pulse (10/1000µs):
- 17.2A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J36AHE3_A/I FAQ
1.How can I place an order for SMB10J36AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J36AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J36AHE3_A/I reliable?
The price and inventory of SMB10J36AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J36AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMB10J36AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J36AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J36AHE3_A/I?
SMB10J36AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J36AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J36AHE3_A/I?
For technical support, including SMB10J36AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J36AHE3_A/I requirements.
6.How does Aetrix verify that SMB10J36AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMB10J36AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J36AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMB10J36AHE3_A/I?
All SMB10J36AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J36AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J36AHE3_A/I part is unused and in its original packaging.
Return procedure for SMB10J36AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J36AHE3_A/I Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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