Vishay General Semiconductor - Diodes Division SMB10J40AHE3_A/I
- Part No.:
- SMB10J40AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J40AHE3_A/I.pdf
- Description:
- TVS DIODE 40VWM 64.5VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:7,608
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Product details
Overview
SMB10J40AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection in automotive and industrial power rails. It features a 40 V stand-off voltage (VWM), 44.4–49.1 V breakdown voltage (VBR), 1000 W peak pulse power (10/1000 µs), 15.5 A peak pulse current (IPPM), and clamps to ≤64.5 V at rated surge - protecting downstream MOSFETs and ICs against load dump and inductive switching transients.
For engineers reviewing the SMB10J40AHE3_A/I datasheet, SMB10J40AHE3_A/I pinout, SMB10J40AHE3_A/I application, or SMB10J40AHE3_A/I equivalent, this device is selected for AEC-Q101-compliant 12 V/24 V automotive power line protection where low clamping voltage, fast response (<1 ns), and MSL Level 1 reflow compatibility are required.
Technical Context
This TVS operates as a silicon avalanche diode with glass-passivated junction, enabling stable breakdown behavior under repetitive surge stress. Its unidirectional polarity and cathode-band marking align with standard DC rail protection topology, requiring series placement between supply and protected node.
The device meets ANSI/IEEE C62.35 surge standards and delivers 100 A non-repetitive forward surge capability (IFSM), supporting robustness against 8.3 ms half-sine surges. Thermal resistance of 72 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead) supports reliable operation up to +150 °C junction temperature in PCB-mounted configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 40 V - maximum continuous reverse operating voltage before leakage exceeds 1.0 µA; sets upper limit for safe DC rail placement. |
| VBR (min/max) | 44.4 V / 49.1 V at 1.0 mA test current - defines guaranteed avalanche onset window for predictable clamping initiation. |
| VC @ IPPM | ≤64.5 V at 15.5 A - clamping voltage during full-rated 10/1000 µs surge; determines maximum stress on protected IC's absolute maximum rating. |
| PPPM | 1000 W - peak pulse power handling per 10/1000 µs waveform; enables protection against ISO 7637-2 Pulse 5a (load dump) in 24 V systems. |
| IFSM | 100 A - non-repetitive forward surge current (8.3 ms half-sine); supports survival during battery connection transients or jump-start events. |
| TJ max | +150 °C - maximum junction temperature; allows operation in under-hood automotive environments without derating below 125 °C ambient. |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per AEC specification; required for Tier-1 power module designs. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to ground or low-side return path in unidirectional configuration; carries full surge current during clamping. |
| Cathode | Avalanche breakdown terminal | Connected to protected supply rail; initiates conduction when reverse voltage exceeds VBR; marked with color band. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR over lifetime and temperature; eliminates parameter drift due to moisture or contamination ingress. |
| MSL Level 1 (260 °C peak) | Enables single-reflow assembly without pre-baking; compatible with standard lead-free SMT processes used in automotive ECUs. |
| AEC-Q101 qualification | Validates reliability for automotive power electronics including engine control, body control modules, and ADAS power supplies. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (e.g., ISO 16750-2); improves clamping precision versus higher-Rsurge TVS devices. |
| UL 94 V-0 molding compound | Meets flammability requirements for enclosed automotive and industrial enclosures; reduces fire risk during catastrophic failure. |
Applications
| Automotive Power Rail Protection | Industrial Motor Drive DC Bus |
|---|---|
|
Use Scenario: Protecting 24 V battery-fed ECUs against load dump transients per ISO 7637-2 Pulse 5a (up to 60 V, 400 ms). IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery input and upstream fuse or DC-DC converter input. Use Value: Clamps surge to ≤64.5 V within nanoseconds, preventing damage to 65 V-rated input MOSFETs and controller ICs. |
Use Scenario: Safeguarding IGBT gate drivers and MCU power supplies in variable-frequency drives exposed to inductive kickback. IC Role / Device Role / Timing Role: Mounted directly across DC bus terminals to absorb energy from motor coil collapse during PWM switching. Use Value: 1000 W peak power rating handles repeated 10/1000 µs surges without degradation, extending system MTBF. |
| Automotive Sensor Power Conditioning | Telecom Power Interface |
|
Use Scenario: Shielding LIN/CAN transceiver power pins from ESD and cable discharge events in door modules and seat controllers. IC Role / Device Role / Timing Role: Local TVS placed at connector entry point, decoupled with 100 nF ceramic capacitor. Use Value: Sub-1 ns response time limits voltage overshoot to <5% above VC, preserving ±15 kV contact ESD immunity per IEC 61000-4-2. |
Use Scenario: Protecting PoE-powered equipment (e.g., IP cameras) from lightning-induced surges on 48 V DC input lines. IC Role / Device Role / Timing Role: Primary surge clamp on midspan injector output, coordinated with secondary GDT-based protection stage. Use Value: 40 V VWM ensures no leakage during normal 48 V operation while providing 1000 W surge headroom for Category A/B telecom surge tests. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ40A-E3/52 | Same VWM (40 V), same SMB package, but commercial-grade (non-AEC-Q101); lower IFSM (50 A vs. 100 A). | Lacks automotive qualification; suitable only for industrial/commercial 24 V systems without load dump compliance needs. | Select when AEC-Q101 is not mandated and cost sensitivity outweighs surge margin requirements. |
| SMCJ40AHE3_A/I | Same VWM/VBR/VC specs, but SMC (DO-214AB) package - larger footprint, higher PPPM (1500 W), RθJA = 40 °C/W. | Better thermal performance and surge headroom, but requires PCB layout change; incompatible with SMB footprints. | Choose when higher surge endurance (>1000 W) or improved thermal dissipation is critical and board space permits SMC. |
Compared with SMBJ40A-E3/52, SMB10J40AHE3_A/I provides AEC-Q101 validation and double the IFSM for automotive load dump resilience; versus SMCJ40AHE3_A/I, it trades 500 W peak power and 32 °C/W lower thermal resistance for SMB footprint compatibility and lower profile in space-constrained modules.
Availability
SMB10J40AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronic control units, industrial motor drives, and telecom power interfaces requiring stable component supply with AEC-Q101 traceability and MSL Level 1 reflow support.
Supply support for SMB10J40AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, power density, and automotive qualification.
The SMB10JxxA family targets high-power-density transient suppression in space-constrained automotive and industrial power systems, balancing clamping performance, surge robustness, and manufacturability in standard SMT packages.
FAQ
What is the clamping voltage of SMB10J40AHE3_A/I at its rated peak pulse current?
The SMB10J40AHE3_A/I clamps to a maximum of 64.5 V when subjected to its rated 15.5 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured at the device terminals and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring compatibility with 65 V-rated downstream components in 24 V automotive systems.
Is SMB10J40AHE3_A/I qualified for automotive use?
Yes, SMB10J40AHE3_A/I is explicitly AEC-Q101 qualified, as confirmed by Vishay's documentation and ordering code suffix "HE3". This qualification covers stress tests including temperature cycling, high-temperature reverse bias, and ESD, making SMB10J40AHE3_A/I suitable for under-hood and chassis-mounted automotive applications such as body control modules and power distribution units.
What does the "_A/I" suffix mean in SMB10J40AHE3_A/I?
The "_A/I" suffix in SMB10J40AHE3_A/I denotes the revision code ("A") and tape-and-reel packaging option ("I" = 13-inch reel, 3200 units per reel). This matches Vishay's ordering convention where "_A/I" specifies both manufacturing revision and delivery format - distinct from "_A/H" (7-inch reel, 750 units) and essential for procurement accuracy and traceability in high-volume automotive builds.
How does SMB10J40AHE3_A/I differ from SMBJ40A in practical design?
SMB10J40AHE3_A/I offers 100 A IFSM (versus 50 A for SMBJ40A), AEC-Q101 qualification, and tighter VBR tolerance (44.4–49.1 V vs. 44.4–51.3 V), making it suitable for automotive load dump protection where higher surge margin and qualification are mandatory. SMBJ40A remains viable for commercial 24 V systems without regulatory compliance demands.
Can SMB10J40AHE3_A/I be used in bidirectional configurations?
No, SMB10J40AHE3_A/I is a unidirectional TVS diode, as indicated by its "A" suffix and cathode-band marking. Bidirectional variants (e.g., SMB10J40CA) exist in the same family but have different electrical characteristics, including lower PPPM (800 W vs. 1000 W) and symmetric breakdown. Using SMB10J40AHE3_A/I in bidirectional circuits would result in forward conduction during negative transients and potential failure.
SMB10J40AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40V
- Voltage - Breakdown (Min):
- 44.4V
- Voltage - Clamping (Max) @ Ipp:
- 64.5V
- Current - Peak Pulse (10/1000µs):
- 15.5A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J40AHE3_A/I FAQ
1.How can I place an order for SMB10J40AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J40AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J40AHE3_A/I reliable?
The price and inventory of SMB10J40AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J40AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMB10J40AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J40AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J40AHE3_A/I?
SMB10J40AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J40AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J40AHE3_A/I?
For technical support, including SMB10J40AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J40AHE3_A/I requirements.
6.How does Aetrix verify that SMB10J40AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMB10J40AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J40AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMB10J40AHE3_A/I?
All SMB10J40AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J40AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J40AHE3_A/I part is unused and in its original packaging.
Return procedure for SMB10J40AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J40AHE3_A/I Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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