Vishay General Semiconductor - Diodes Division SMB10J6.5AHE3_A/H
- Part No.:
- SMB10J6.5AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J6.5AHE3_A/H.pdf
- Description:
- TVS DIODE 6.5VWM 11.2VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:6,329
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMB10J6.5AHE3_A/H from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection with 1000 W peak pulse power (10/1000 µs), 6.5 V stand-off voltage, and 11.2 V clamping voltage at 89.3 A peak pulse current. It is AEC-Q101 qualified and used to protect automotive sensor signal lines, MOSFET gates, and microcontroller I/O pins against inductive switching transients.
For engineers reviewing the SMB10J6.5AHE3_A/H datasheet, SMB10J6.5AHE3_A/H pinout, SMB10J6.5AHE3_A/H application, or SMB10J6.5AHE3_A/H equivalent, key selection criteria include clamping voltage margin relative to protected IC VI/O, junction temperature derating above 25 °C, unidirectional polarity alignment with DC bias, and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This TVS operates as a voltage-clamped shunt protector: under normal conditions it presents <1 µA leakage at 6.5 V; when a transient exceeds its 7.22–7.98 V breakdown range (tested at 10 mA), it avalanches rapidly (<1 ns response) to clamp the line at ≤11.2 V. Its low incremental surge resistance ensures minimal voltage overshoot during 1000 W surges.
Thermally, it features RθJA = 72 °C/W on standard 0.2" × 0.2" copper pads and RθJL = 20 °C/W to leads, enabling sustained operation up to +150 °C junction temperature. The glass-passivated junction and matte tin-plated leads meet J-STD-002 solderability and JESD201 Class 2 whisker resistance requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.5 V - Maximum continuous reverse operating voltage before leakage exceeds 10 µA; must be ≥ system DC bias to avoid conduction. |
| VBR min/max | 7.22 V / 7.98 V - Breakdown occurs within this range at 10 mA test current; defines turn-on threshold tolerance. |
| VC @ IPPM | 11.2 V - Clamped voltage at 89.3 A peak pulse current; determines maximum stress on downstream ICs. |
| PPPM | 1000 W - Peak pulse power handling (10/1000 µs waveform); sets surge energy absorption capability. |
| IFSM | 100 A - Non-repetitive forward surge rating (8.3 ms half-sine); supports high-current inductive kick events. |
| TJ max | +150 °C - Maximum junction temperature; enables use in under-hood automotive environments. |
| AEC-Q101 | Qualified - Validated for automotive reliability including temperature cycling, HTRB, and ESD per AEC standard. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H). Molding compound meets UL 94 V-0.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | DC return path for clamped surge current | Connected to system ground or low-side reference; carries full IPPM during transient. |
| Cathode | Protected line input terminal | Connected to signal/power line being protected; color band identifies this end. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable breakdown voltage and long-term reliability under thermal cycling and humidity stress. |
| MSL Level 1 (J-STD-020) | Allows unlimited floor life and reflow at 260 °C peak without moisture-induced popcorning. |
| Low clamping ratio (VC/VBR) | 11.2 V / 7.22 V ≈ 1.55 - Minimizes overvoltage exposure to protected ICs during surge events. |
| Matte tin-plated leads | Guarantees solder joint integrity per J-STD-002 and prevents tin whisker growth (JESD201 Class 2). |
| Automotive-grade suffix HE3 | Indicates RoHS-compliant construction with AEC-Q101 qualification - required for Tier-1 automotive BOMs. |
Applications
| Automotive Sensor Protection | Industrial Motor Drive I/O |
|---|---|
Use Scenario: Protecting LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) in engine control modules from load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional shunt clamping device placed between signal line and chassis ground. Use Value: Limits transient excursions to ≤11.2 V, preserving sensor accuracy and preventing MCU reset or latch-up during ISO 7637-2 Pulse 1/2a events. | Use Scenario: Safeguarding PLC digital input terminals connected to 24 V DC solenoid drivers subject to inductive kickback. IC Role / Device Role / Timing Role: Standoff voltage (6.5 V) blocks normal 24 V DC, while clamping surges >7.22 V to protect optocoupler inputs. Use Value: Absorbs 1000 W pulses without degradation, enabling reliable operation across 100,000+ switching cycles in factory automation. |
| Power Supply Rail Protection | USB/Serial Interface ESD Suppression |
Use Scenario: Secondary overvoltage protection on 5 V or 3.3 V DC-DC converter outputs feeding sensitive logic circuits. IC Role / Device Role / Timing Role: Parallel-connected TVS that activates only during overvoltage faults exceeding VBR, not during normal regulation. Use Value: Clamps fast-rising transients (e.g., capacitor discharge faults) to ≤11.2 V, preventing damage to LDOs and PMICs downstream. | Use Scenario: Board-level ESD protection on RS-485 transceiver data lines exposed to human-body-model (HBM) discharges. IC Role / Device Role / Timing Role: Low-capacitance unidirectional clamp referenced to local ground, placed adjacent to connector. Use Value: Responds in <1 ns to ±8 kV contact discharge (IEC 61000-4-2), limiting voltage seen by transceiver to safe levels without signal distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ6.5AHE3_A/H | Same VWM (6.5 V) and VC (11.2 V), but lower PPPM = 600 W and IPPM = 53.5 A. | Not suitable for 1000 W surge environments like automotive load dump; limited to lower-energy industrial transients. | Select SMBJ6.5AHE3_A/H only when system-level testing confirms 600 W clamping capacity is sufficient. |
| 1.5SMC6.5AHE3_A/H | Same electrical specs but in larger SMC (DO-214AB) package; RθJA = 40 °C/W vs. 72 °C/W. | Better thermal performance allows higher ambient operation; requires larger PCB footprint (7.11 mm × 6.22 mm). | Choose 1.5SMC6.5AHE3_A/H when board layout permits larger package and junction temperature margin is critical. |
Compared with SMBJ6.5AHE3_A/H, SMB10J6.5AHE3_A/H delivers 67% higher surge power handling without changing circuit topology; versus 1.5SMC6.5AHE3_A/H, it saves 40% board area while accepting higher thermal resistance - ideal for space-constrained automotive ECUs.
Availability
SMB10J6.5AHE3_A/H is available at Aetrix Electronics and suitable for automotive sensor modules, industrial PLC I/O cards, and DC-DC converter output protection requiring stable component supply with AEC-Q101 compliance and 1000 W surge immunity.
Supply support for SMB10J6.5AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and automotive qualification.
The SMB10J series belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-power, surface-mount transient suppression in harsh environments where AEC-Q101 validation and consistent clamping performance are mandatory.
FAQ
What is the clamping voltage of SMB10J6.5AHE3_A/H at its rated peak pulse current?
The SMB10J6.5AHE3_A/H has a maximum clamping voltage (VC) of 11.2 V when subjected to its rated peak pulse current of 89.3 A (10/1000 µs waveform). This value is measured per ANSI/IEEE C62.35 and guarantees the protected circuit sees no more than 11.2 V during a full-power transient event. The SMB10J6.5AHE3_A/H datasheet specifies this parameter under standardized test conditions at TA = 25 °C.
Is SMB10J6.5AHE3_A/H suitable for bidirectional signal line protection?
No, SMB10J6.5AHE3_A/H is a unidirectional TVS diode and must be used only on DC-biased lines where polarity is fixed - such as 5 V power rails or sensor outputs referenced to ground. For bidirectional AC or differential lines (e.g., RS-485, CAN), the bidirectional variant SMB8J6.5CAHE3_A/H is required. The SMB10J6.5AHE3_A/H cathode band marks the protected line side and cannot clamp negative-going transients.
Does SMB10J6.5AHE3_A/H meet automotive qualification standards?
Yes, SMB10J6.5AHE3_A/H is AEC-Q101 qualified, as confirmed by Vishay's documentation (Document Number: 88422, Revision: 09-Jan-2024). This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and ESD, making it suitable for under-hood and body-control module applications. The "HE3" suffix explicitly denotes AEC-Q101 qualification and RoHS compliance.
What is the thermal resistance of SMB10J6.5AHE3_A/H, and how does it affect layout?
The SMB10J6.5AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 72 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain TJ ≤ 150 °C during repeated surges, PCB layout must provide adequate copper area and minimize trace length to ground. Reducing pad size or omitting thermal vias increases RθJA, risking thermal runaway. The SMB10J6.5AHE3_A/H thermal performance is validated only with the specified mounting conditions.
How does the breakdown voltage tolerance of SMB10J6.5AHE3_A/H impact circuit design?
The SMB10J6.5AHE3_A/H has a guaranteed breakdown voltage range of 7.22 V to 7.98 V at 10 mA test current. Designers must ensure the protected IC's absolute maximum voltage rating exceeds the upper limit (7.98 V), and that system operating voltage remains below the lower limit (7.22 V) to prevent premature conduction. This 10.5% tolerance requires margining in safety-critical designs - the SMB10J6.5AHE3_A/H is not intended for precision voltage reference use.
SMB10J6.5AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.5V
- Voltage - Breakdown (Min):
- 7.22V
- Voltage - Clamping (Max) @ Ipp:
- 11.2V
- Current - Peak Pulse (10/1000µs):
- 89.3A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J6.5AHE3_A/H FAQ
1.How can I place an order for SMB10J6.5AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J6.5AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J6.5AHE3_A/H reliable?
The price and inventory of SMB10J6.5AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J6.5AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMB10J6.5AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J6.5AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J6.5AHE3_A/H?
SMB10J6.5AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J6.5AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J6.5AHE3_A/H?
For technical support, including SMB10J6.5AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J6.5AHE3_A/H requirements.
6.How does Aetrix verify that SMB10J6.5AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMB10J6.5AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J6.5AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMB10J6.5AHE3_A/H?
All SMB10J6.5AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J6.5AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J6.5AHE3_A/H part is unused and in its original packaging.
Return procedure for SMB10J6.5AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J6.5AHE3_A/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

