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Vishay General Semiconductor - Diodes Division SMB10J7.5AHE3_A/H
- Part No.:
- SMB10J7.5AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J7.5AHE3_A/H.pdf
- Description:
- TVS DIODE 7.5VWM 12.9VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,657
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Product details
Overview
SMB10J7.5AHE3_A/H from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection on DC power rails and signal lines. It features a 7.5 V stand-off voltage (VWM), 8.33–9.21 V breakdown voltage (VBR) at 1.0 mA, 12.9 V clamping voltage (VC) at 100 A peak pulse current (IPPM), and 1000 W peak pulse power (PPPM) with 10/1000 µs waveform. It is AEC-Q101 qualified and used in automotive power supply input stages.
For engineers reviewing the SMB10J7.5AHE3_A/H datasheet, SMB10J7.5AHE3_A/H pinout, SMB10J7.5AHE3_A/H application, or SMB10J7.5AHE3_A/H equivalent, key selection criteria include clamping performance under 100 A surge, AEC-Q101 qualification status, unidirectional polarity for DC rail protection, thermal resistance (RθJA = 72 °C/W), and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This device operates as a silicon avalanche diode that enters controlled breakdown above its VWM to clamp transient overvoltages while diverting surge current away from protected circuitry. Its glass-passivated junction ensures stable VBR and low leakage (<1.0 µA at 7.5 V), and its low incremental surge resistance enables effective energy absorption without thermal runaway.
The SMB10J7.5AHE3_A/H is rated for -55 °C to +150 °C operating junction temperature, meets MSL Level 1 per J-STD-020 (peak reflow 260 °C), and uses matte tin-plated leads compliant with J-STD-002 and JESD 22-B102. Its unidirectional configuration requires cathode-band orientation during PCB layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.5 V - Maximum continuous reverse working voltage before clamping begins; defines safe DC operating margin. |
| VBR min/max | 8.33 V / 9.21 V at IT = 1.0 mA - Confirmed breakdown range ensures reliable turn-on across process variation and temperature. |
| VC @ IPPM | 12.9 V at 100 A (10/1000 µs) - Clamping voltage limits downstream IC stress during worst-case surge events. |
| PPPM | 1000 W - Peak pulse power rating determines maximum transient energy absorption capability. |
| ID @ VWM | <1.0 µA - Ultra-low reverse leakage preserves battery life and avoids false triggering in low-power systems. |
| TJ max | +150 °C - Enables use in under-hood automotive environments and high-ambient industrial enclosures. |
| RθJA | 72 °C/W - Thermal resistance informs heatsinking requirements when operating near power derating limits. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with molded UL 94 V-0 compound and cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); recommended pad layout: 5.59 mm × 2.18 mm minimum per terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction path | Connected to lower-potential side (e.g., GND or return path) in unidirectional TVS configuration. |
| Cathode (marked) | Reverse-biased clamping node | Connected to protected line (e.g., 12 V rail); conducts avalanche current during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per stress test plan. |
| Glass-passivated junction | Ensures long-term VBR stability and low parameter drift across humidity, bias, and thermal aging conditions. |
| MSL Level 1 rating | Supports standard SMT reflow profiles up to 260 °C peak without moisture-induced popcorn failure. |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes overvoltage overshoot during fast transients, improving robustness of downstream MOSFETs and controllers. |
| Matte tin plating | Enables reliable solder joint formation and passes JESD 201 Class 2 whisker resistance testing. |
Applications
| Automotive Body Control Module (BCM) Power Input | Industrial PLC Digital I/O Protection |
|---|---|
Use Scenario: Protects 12 V supply rail of BCM against load dump (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS placed between fused battery feed and DC-DC converter input. Use Value: Clamps 12 V rail to ≤12.9 V during 100 A surge, preventing damage to buck controller ICs and microcontrollers. |
Use Scenario: Shields 24 V digital input channels from inductive kickback caused by solenoid/relay switching. IC Role / Device Role / Timing Role: Standoff-rated TVS on each channel's input trace, upstream of optocoupler or Schmitt trigger. Use Value: Limits transient voltage to safe levels within 1 ns response time, preserving signal integrity and logic state fidelity. |
| Automotive Infotainment USB Power Line | Telecom Base Station DC Feeder Protection |
Use Scenario: Safeguards 5 V USB VBUS line in head unit against ESD (IEC 61000-4-2) and conducted surges. IC Role / Device Role / Timing Role: Primary clamping device on VBUS, coordinated with secondary polymer PTC and filtering caps. Use Value: Absorbs ±15 kV contact ESD pulses with <1.0 µA leakage at 5 V, avoiding false resets or port disablement. |
Use Scenario: Protects -48 V telecom DC feeder from lightning-induced surges entering via outdoor cabling. IC Role / Device Role / Timing Role: First-stage unidirectional TVS on rectified DC output of AC/DC front-end module. Use Value: Handles 1000 W surge energy without degradation, maintaining system uptime during Category B/C lightning events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ7.5AHE3_A/H | Same SMB package, identical VWM/VBR/VC specs, but rated for 600 W PPPM (vs. 1000 W). | Limited to lower-energy transients; insufficient for ISO 7637-2 Pulse 5a compliance in 12 V automotive systems. | Select only if surge energy requirement is ≤600 W and cost sensitivity outweighs headroom needs. |
| SMCJ7.5AHE3_A/H | Same electrical specs but in larger SMC (DO-214AB) package; RθJA = 35 °C/W vs. 72 °C/W. | Better thermal performance allows sustained higher average power; requires larger PCB footprint (7.11 mm × 6.22 mm). | Choose when thermal management is critical and board space permits larger footprint. |
Compared with SMBJ7.5AHE3_A/H and SMCJ7.5AHE3_A/H, SMB10J7.5AHE3_A/H delivers 67% higher peak pulse power in the same SMB footprint while maintaining AEC-Q101 qualification-making it optimal for space-constrained, high-surge automotive and industrial power rails where thermal derating must be minimized.
Availability
SMB10J7.5AHE3_A/H is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC I/O protection, telecom DC feeder systems, and infotainment USB power rails requiring stable component supply with full AEC-Q101 traceability.
Supply support for SMB10J7.5AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and power MOSFETs with emphasis on reliability, ruggedness, and automotive-grade qualification.
The SMB10J series belongs to Vishay's high-power-density TRANSZORB® TVS family, engineered specifically for demanding automotive and industrial surge environments where compact size, AEC-Q101 compliance, and 1000 W clamping capability are mandatory.
FAQ
What is the clamping voltage of SMB10J7.5AHE3_A/H at its rated peak pulse current?
The SMB10J7.5AHE3_A/H has a maximum clamping voltage (VC) of 12.9 V when subjected to a 100 A peak pulse current with a 10/1000 µs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The SMB10J7.5AHE3_A/H maintains this clamping performance across its qualified temperature range (-55 °C to +150 °C) and is validated per ANSI/IEEE C62.35 standards.
Is SMB10J7.5AHE3_A/H suitable for automotive applications?
Yes, SMB10J7.5AHE3_A/H is AEC-Q101 qualified and explicitly designated for automotive use with ordering code suffix "HE3". It undergoes rigorous stress testing-including temperature cycling, highly accelerated life testing (HALT), and ESD verification-to ensure reliability in under-hood and cabin environments. The SMB10J7.5AHE3_A/H is commonly deployed in BCM, ADAS sensor power supplies, and infotainment systems where ISO 7637-2 and ISO 16750-2 compliance is required.
What is the difference between SMB10J7.5AHE3_A/H and SMBJ7.5AHE3_A/H?
The SMB10J7.5AHE3_A/H delivers 1000 W peak pulse power (PPPM), whereas the SMBJ7.5AHE3_A/H is rated for 600 W-despite identical VWM (7.5 V), VBR (8.33–9.21 V), and VC (12.9 V). This 400 W difference stems from optimized chip geometry and thermal design in the SMB10J series. The SMB10J7.5AHE3_A/H is therefore preferred for high-energy transients like load dump, while SMBJ7.5AHE3_A/H suits lower-energy ESD or switching noise scenarios.
Does SMB10J7.5AHE3_A/H have polarity markings, and how is it oriented on PCB?
Yes, SMB10J7.5AHE3_A/H is unidirectional and features a visible cathode band on the package body. During PCB layout, the banded end must be connected to the line being protected (e.g., 12 V rail), while the anode connects to ground or return path. Incorrect orientation prevents clamping action and may result in catastrophic failure under reverse surge. The SMB10J7.5AHE3_A/H datasheet specifies this polarity in mechanical drawings and electrical schematics.
What is the maximum operating temperature and thermal resistance of SMB10J7.5AHE3_A/H?
The SMB10J7.5AHE3_A/H has a maximum junction temperature (TJ max) of +150 °C and a typical junction-to-ambient thermal resistance (RθJA) of 72 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This RθJA value assumes standard JEDEC test conditions and guides thermal design-e.g., doubling copper area reduces RθJA by ~20%, directly improving surge duty cycle capability. Derating curves in the SMB10J7.5AHE3_A/H datasheet define safe power limits above 25 °C ambient.
SMB10J7.5AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.33V
- Voltage - Clamping (Max) @ Ipp:
- 12.9V
- Current - Peak Pulse (10/1000µs):
- 77.5A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J7.5AHE3_A/H FAQ
1.How can I place an order for SMB10J7.5AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J7.5AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J7.5AHE3_A/H reliable?
The price and inventory of SMB10J7.5AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J7.5AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMB10J7.5AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J7.5AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J7.5AHE3_A/H?
SMB10J7.5AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J7.5AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J7.5AHE3_A/H?
For technical support, including SMB10J7.5AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J7.5AHE3_A/H requirements.
6.How does Aetrix verify that SMB10J7.5AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMB10J7.5AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J7.5AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMB10J7.5AHE3_A/H?
All SMB10J7.5AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J7.5AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J7.5AHE3_A/H part is unused and in its original packaging.
Return procedure for SMB10J7.5AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J7.5AHE3_A/H Tags
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