Vishay General Semiconductor - Diodes Division SMB10J7.5AHE3_A/I

Overview

SMB10J7.5AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection on DC power rails and signal lines. It features a 7.5 V stand-off voltage (V_WM), 8.33–9.21 V breakdown voltage (V_BR) at 1.0 mA, 12.9 V clamping voltage (V_C) at 100 A peak pulse current, and 1000 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive sensor interfaces and industrial control I/O protection.

For engineers reviewing the SMB10J7.5AHE3_A/I datasheet, SMB10J7.5AHE3_A/I pinout, SMB10J7.5AHE3_A/I application, or SMB10J7.5AHE3_A/I equivalent, key selection criteria include AEC-Q101 qualification, unidirectional polarity with cathode band marking, low incremental surge resistance, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.

Technical Context

This TVS diode operates as a clamping device that remains non-conductive below V_WM = 7.5 V and rapidly transitions to low-impedance conduction above V_BR (min 8.33 V), limiting transient overvoltages to ≤12.9 V at 100 A. Its glass-passivated junction ensures stable leakage (<1.0 µA at V_WM) and repeatable breakdown behavior across temperature.

Thermal performance is defined by R_θJA = 72 °C/W and R_θJL = 20 °C/W, supporting operation from –55 °C to +150 °C junction temperature. The device meets MSL level 1 per J-STD-020 and is qualified to AEC-Q101 for automotive under-hood and body electronics applications.

Key Specifications

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by color band at one end.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMBJ7.5A-E3/52, SMB10J7.5AHE3_A/I adds AEC-Q101 qualification and tighter process control for automotive use; versus 1.5SMC7.5A, it offers 30% smaller PCB area and lower thermal resistance to lead (R_θJL = 20 °C/W), enabling denser layouts without sacrificing surge capability.

Availability

SMB10J7.5AHE3_A/I is available at Aetrix Electronics and suitable for automotive sensor modules, industrial PLC I/O cards, and telecom line card designs requiring stable component supply with AEC-Q101 assurance and consistent surge performance.

Supply support for SMB10J7.5AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and application-specific optimization.

The SMB10J series belongs to Vishay's TRANSZORB® TVS platform, engineered specifically for high-power-density, AEC-Q101-compliant transient suppression in harsh automotive and industrial environments.

FAQ

What is the clamping voltage of SMB10J7.5AHE3_A/I at its rated peak pulse current?

The SMB10J7.5AHE3_A/I has a maximum clamping voltage (V_C) of 12.9 V at 100 A peak pulse current (I_PPM) under the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is measured with the device mounted on 0.2" × 0.2" copper pads per JEDEC standards. The SMB10J7.5AHE3_A/I maintains this clamping performance across its full operating temperature range.

Is SMB10J7.5AHE3_A/I qualified for automotive applications?

Yes, SMB10J7.5AHE3_A/I is explicitly AEC-Q101 qualified, as confirmed by Vishay's documentation and ordering code suffix "HE3". This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and ESD, making SMB10J7.5AHE3_A/I suitable for automotive powertrain, body electronics, and ADAS sensor modules where reliability under extended temperature and vibration is mandatory.

What does the "HE3" suffix in SMB10J7.5AHE3_A/I indicate?

The "HE3" suffix in SMB10J7.5AHE3_A/I denotes RoHS-compliant construction with AEC-Q101 qualification and halogen-free molding compound. The "H" indicates AEC-Q101 qualification, "E3" confirms RoHS compliance, and the trailing "_A/I" specifies packaging: "A" is the revision code, and "I" denotes 13-inch tape-and-reel delivery (3200 units per reel). This distinguishes SMB10J7.5AHE3_A/I from commercial variants like SMBJ7.5A-E3/52.

How does SMB10J7.5AHE3_A/I differ from bidirectional TVS diodes with similar voltage ratings?

SMB10J7.5AHE3_A/I is unidirectional and functions only during reverse-biased transients - it conducts when cathode voltage exceeds anode by ≥V_BR. Bidirectional equivalents (e.g., SMB8J7.5CA) conduct symmetrically for both polarities but offer lower peak pulse power (800 W vs. 1000 W) and higher clamping voltage at same current. SMB10J7.5AHE3_A/I is preferred for DC rail protection where polarity is fixed and higher surge margin is needed.

What is the thermal resistance of SMB10J7.5AHE3_A/I, and how does it affect layout design?

SMB10J7.5AHE3_A/I has a typical junction-to-ambient thermal resistance (R_θJA) of 72 °C/W and junction-to-lead resistance (R_θJL) of 20 °C/W. These values assume mounting on 0.2" × 0.2" copper pads per terminal. To maintain T_J ≤ 150 °C during repeated surges, PCB layout must provide adequate copper area and minimize trace length to ground. The low R_θJL enables efficient heat transfer to the PCB, reducing reliance on large thermal pads.