My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMB10J8.0AHE3_A/I
- Part No.:
- SMB10J8.0AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB10J8.0AHE3_A/I.pdf
- Description:
- TVS DIODE 8VWM 13.6VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:9,174
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMB10J8.0AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection with 1000 W peak pulse power (10/1000 µs), 8.0 V stand-off voltage (VWM), and 13.6 V clamping voltage (VC) at 50 A peak pulse current. It is AEC-Q101 qualified and used to protect automotive sensor signal lines, MOSFET gates, and microcontroller I/O against inductive switching transients.
For engineers reviewing the SMB10J8.0AHE3_A/I datasheet, SMB10J8.0AHE3_A/I pinout, SMB10J8.0AHE3_A/I application, or SMB10J8.0AHE3_A/I equivalent, this page delivers verified electrical specs, automotive-grade qualification status, thermal resistance data, and real-world protection use cases - all aligned to Vishay Document #88422 (Rev. 09-Jan-2024).
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: it remains high-impedance below 8.0 V (VWM) and rapidly avalanches above ~8.89 V (min. VBR at 1 mA) to clamp transients. Its glass-passivated junction ensures stable breakdown and low leakage (<1.0 µA at VWM), while MSL Level 1 rating supports lead-free reflow up to 260 °C.
Thermal performance is defined by RθJA = 72 °C/W (typ.) on 0.2" × 0.2" copper pads and RθJL = 20 °C/W, enabling reliable operation up to TJ = +150 °C. The device meets ANSI/IEEE C62.35 standards for surge waveform compliance and is rated for non-repetitive 100 A forward surge (IFSM, 8.3 ms half-sine).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.0 V - Maximum continuous reverse operating voltage before conduction begins |
| VBR (min/max) | 8.89 V / 9.83 V at 1.0 mA - Confirmed breakdown threshold range for reliable triggering |
| VC @ IPPM | 13.6 V at 50 A - Clamped voltage during full-rated 10/1000 µs surge, limiting stress on downstream ICs |
| PPPM | 1000 W - Peak pulse power handling capability under standardized surge waveform |
| IPPM | 50 A - Maximum non-repetitive peak pulse current the device safely clamps |
| TJ max. | +150 °C - Maximum junction temperature supporting under-hood automotive deployment |
| RθJA | 72 °C/W - Thermal resistance from junction to ambient on standard 5.0 mm × 5.0 mm copper pads |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads compliant with J-STD-002 and JESD 22-B102. Cathode indicated by color band; polarity-critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Surge return path | Connected to protected line ground or low-side reference; completes clamping loop during transient |
| Cathode | Reverse-biased terminal / Clamping node | Connected to protected signal line; avalanche conduction occurs here when VLINE exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control units and ADAS sensor interfaces |
| Glass passivated junction | Ensures stable VBR over time and temperature, minimizing parameter drift in harsh environments |
| MSL Level 1 (260 °C) | Supports standard lead-free reflow without popcorn cracking or delamination |
| Low incremental surge resistance | Enables tighter VC control during fast-rising transients (e.g., ISO 7637-2 Pulse 1/2a) |
| UL 94 V-0 molding compound | Provides flame-retardant housing required for automotive and industrial safety certifications |
Applications
| Automotive Sensor Protection | Industrial Motor Drive I/O |
|---|---|
Use Scenario: Protecting LIN bus or analog sensor outputs (e.g., pressure, temperature) in engine compartments exposed to load dump and inductive kick. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between signal line and chassis ground to clamp transients before they reach MCU ADC input or transceiver. Use Value: Limits voltage excursion to ≤13.6 V during 50 A surges, preserving signal integrity and preventing latch-up in 3.3 V/5 V interface ICs. | Use Scenario: Safeguarding digital enable/disable signals and feedback lines in variable-frequency drives subject to relay contact bounce and motor coil flyback. IC Role / Device Role / Timing Role: Standoff protection element on isolated gate driver control inputs, absorbing <100 ns rise-time spikes from nearby power switching. Use Value: Fast response (<1 ps typical) and low clamping ratio (VC/VWM = 1.7) prevent false triggering of logic-level control circuits. |
| Consumer Power Adapter Interface | Telecom Line Card Surge Suppression |
Use Scenario: Input-stage protection for USB-C PD controllers and AC/DC adapter secondary-side monitoring circuits vulnerable to ESD and conducted noise. IC Role / Device Role / Timing Role: Primary transient barrier on 5 V/9 V/15 V power rails feeding PMICs and level translators. Use Value: 1000 W PPPM rating handles multiple 8/20 µs surges per IEC 61000-4-5 Level 3 without degradation. | Use Scenario: Secondary-side surge suppression on Ethernet PHY power and bias lines in base station line cards subjected to lightning-induced surges. IC Role / Device Role / Timing Role: Low-capacitance (<100 pF typical at 0 V) shunt protector on 3.3 V auxiliary rails feeding clock buffers and SerDes lanes. Use Value: Minimal signal distortion due to low junction capacitance and absence of series impedance - critical for 1 Gbps+ data integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.0A-E3/52 | Same SMB package, identical VWM/VC, but commercial-grade (non-AEC-Q101); RθJA = 72 °C/W unchanged | Lacks automotive qualification; suitable for industrial/commercial designs where AEC-Q101 is not mandated | Select SMBJ8.0A-E3/52 only if automotive reliability testing and extended temperature validation are unnecessary |
| SMAJ8.0AHE3_A/I | Smaller SMA (DO-214AC) package; same VWM/VC, but lower PPPM = 400 W and higher RθJA = 95 °C/W | Reduced surge handling limits use to lower-energy interfaces (e.g., UART, I²C) rather than CAN or power supply rails | Choose SMAJ8.0AHE3_A/I only when board space is constrained and peak surge energy remains below 400 W |
Compared with SMBJ8.0A-E3/52 and SMAJ8.0AHE3_A/I, SMB10J8.0AHE3_A/I uniquely combines AEC-Q101 qualification, 1000 W surge capacity, and SMB footprint - making it the only option among the three validated for under-hood automotive power rail protection requiring sustained thermal performance and automotive lifecycle compliance.
Availability
SMB10J8.0AHE3_A/I is available at Aetrix Electronics and suitable for automotive sensor modules, industrial motor drive control boards, and telecom line card designs requiring stable component supply with guaranteed AEC-Q101 compliance and long-term production continuity.
Supply support for SMB10J8.0AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power density, and automotive-grade qualification.
The SMB10Jx.xAHE3 series belongs to Vishay's TRANSZORB® high-power TVS family, engineered specifically for robust transient suppression in automotive powertrain, body electronics, and ADAS systems where failure tolerance and thermal resilience are critical.
FAQ
What is the clamping voltage of SMB10J8.0AHE3_A/I at its rated peak pulse current?
The SMB10J8.0AHE3_A/I has a maximum clamping voltage (VC) of 13.6 V when subjected to its rated peak pulse current of 50 A under the standard 10/1000 µs waveform. This value is measured and guaranteed per Vishay Document #88422, ensuring predictable overvoltage limiting for downstream circuitry such as microcontrollers or transceivers. The SMB10J8.0AHE3_A/I maintains this clamping performance across its operational temperature range.
Is SMB10J8.0AHE3_A/I suitable for automotive applications?
Yes, SMB10J8.0AHE3_A/I is explicitly AEC-Q101 qualified, as confirmed in Vishay Document #88422 (Rev. 09-Jan-2024). It is rated for operation from −55 °C to +150 °C, features MSL Level 1 moisture sensitivity, and uses halogen-free, RoHS-compliant materials. These attributes make SMB10J8.0AHE3_A/I appropriate for engine control units, battery management systems, and ADAS sensor interfaces where automotive-grade reliability is mandatory.
What is the standoff voltage and breakdown voltage range for SMB10J8.0AHE3_A/I?
The SMB10J8.0AHE3_A/I has a stand-off voltage (VWM) of 8.0 V and a minimum/maximum breakdown voltage (VBR) of 8.89 V / 9.83 V at 1.0 mA test current. This 8.0 V VWM ensures compatibility with 5 V and 8 V logic/power domains, while the controlled VBR window guarantees consistent turn-on behavior across production lots. All values are specified in the "UNIDIRECTIONAL" table of Vishay Document #88422.
Does SMB10J8.0AHE3_A/I have a bidirectional variant?
No - SMB10J8.0AHE3_A/I is strictly unidirectional. Bidirectional variants in the same SMB package carry "CA" suffixes (e.g., SMB8J8.0CA), but those are distinct part numbers with different marking codes, surge ratings (800 W vs. 1000 W), and breakdown symmetry. The SMB10J8.0AHE3_A/I datasheet section "UNIDIRECTIONAL" explicitly excludes bidirectional operation, and its cathode band marking confirms polarity-sensitive placement.
What is the thermal resistance of SMB10J8.0AHE3_A/I, and how does it affect layout?
The SMB10J8.0AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 72 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as defined in Vishay Document #88422. This value directly informs PCB copper area requirements: reducing pad size increases RθJA, risking thermal runaway during repeated surges. Layout must follow the recommended mounting pad dimensions shown in Figure "PACKAGE OUTLINE DIMENSIONS" to maintain rated PPPM and TJ limits.
SMB10J8.0AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V
- Voltage - Breakdown (Min):
- 8.89V
- Voltage - Clamping (Max) @ Ipp:
- 13.6V
- Current - Peak Pulse (10/1000µs):
- 73.5A
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB10J8.0AHE3_A/I FAQ
1.How can I place an order for SMB10J8.0AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB10J8.0AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB10J8.0AHE3_A/I reliable?
The price and inventory of SMB10J8.0AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB10J8.0AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMB10J8.0AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB10J8.0AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB10J8.0AHE3_A/I?
SMB10J8.0AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB10J8.0AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB10J8.0AHE3_A/I?
For technical support, including SMB10J8.0AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB10J8.0AHE3_A/I requirements.
6.How does Aetrix verify that SMB10J8.0AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMB10J8.0AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB10J8.0AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMB10J8.0AHE3_A/I?
All SMB10J8.0AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMB10J8.0AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB10J8.0AHE3_A/I part is unused and in its original packaging.
Return procedure for SMB10J8.0AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB10J8.0AHE3_A/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
