Vishay General Semiconductor - Diodes Division SMB8J11C-E3/52
- Part No.:
- SMB8J11C-E3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB8J11C-E3/52.pdf
- Description:
- TVS DIODE 11VWM 20.1VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMB8J11C-E3/52 from Vishay General Semiconductor is a bi-directional transient voltage suppressor (TVS) diode in DO-214AA (SMB) package, designed for high-energy surge protection on signal and power lines. It features 11 V stand-off voltage (VWM), 12.2–13.5 V breakdown voltage (VBR) at 1 mA, 18.2 V clamping voltage (VC) at 44.0 A peak pulse current (IPPM), and 800 W peak pulse power (PPPM) with 10/1000 µs waveform. It is AEC-Q101 qualified and used in automotive sensor interfaces and industrial I/O protection.
For engineers reviewing the SMB8J11C-E3/52 datasheet, SMB8J11C-E3/52 pinout, SMB8J11C-E3/52 application, or SMB8J11C-E3/52 equivalent, key selection criteria include bi-directional clamping capability, 18.2 V max clamping under 44 A surge, AEC-Q101 qualification, RoHS-compliant matte tin plating, and DO-214AA thermal performance (RθJA = 72 °C/W).
Technical Context
This bi-directional TVS diode operates symmetrically across both polarities, enabling robust protection against ESD, lightning-induced transients, and inductive switching spikes without polarity sensitivity. Its glass-passivated junction ensures stable VBR tolerance (±10%) and low leakage (<5 µA at VWM), while the low incremental surge resistance supports fast clamping response (sub-nanosecond).
The device is rated for -55 °C to +150 °C operating junction temperature and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Its 72 °C/W junction-to-ambient thermal resistance requires minimum 0.2" × 0.2" copper pads per terminal for full 800 W rating compliance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11 V - Maximum continuous reverse working voltage before clamping begins; defines safe operating margin for 12 V nominal systems. |
| VBR (min/max) | 12.2 V / 13.5 V at 1 mA - Confirmed breakdown range ensures reliable turn-on during overvoltage events without premature conduction. |
| VC @ IPPM | 18.2 V at 44.0 A - Clamping voltage under full 10/1000 µs surge; limits downstream IC stress to safe levels in automotive CAN/LIN lines. |
| PPPM | 800 W - Peak pulse power handling with 10/1000 µs waveform; supports IEC 61000-4-5 Level 4 (4 kV) surge immunity when properly mounted. |
| ID @ VWM | <5 µA - Reverse leakage at stand-off voltage; minimizes quiescent power loss and avoids false triggering in low-current sensor circuits. |
| TJ max. | +150 °C - Maximum junction temperature; enables operation in under-hood automotive environments and industrial enclosures. |
| Package | DO-214AA (SMB) - Standard surface-mount outline with cathode band omitted (bi-directional); compatible with automated pick-and-place and reflow. |
Pinout & Package
DO-214AA (SMB) package: molded epoxy case with matte tin-plated leads, no polarity marking (bi-directional). Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H), lead spacing 3.30 mm, recommended pad layout 5.0 mm × 5.0 mm copper per terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bi-directional surge path | No designated anode/cathode; terminals interchangeable - enables single-component protection on AC-coupled or floating lines. |
| Case (body) | Thermal and mechanical interface | Non-conductive epoxy body; heat dissipation relies entirely on soldered leads and PCB copper; no heatsink pad required. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensor interfaces per stress test requirements. |
| Glass passivated junction | Ensures long-term VBR stability and low parameter drift over temperature and lifetime, critical for safety-critical protection circuits. |
| MSL Level 1 (260 °C peak) | Enables standard SMT reflow without moisture sensitivity concerns; eliminates bake-out requirement prior to assembly. |
| RoHS-compliant matte tin plating | Meets J-STD-002 and JESD 22-B102 solderability standards; supports lead-free assembly with no whisker risk (JESD 201 Class 1A). |
| Low clamping ratio (VC/VBR ≈ 1.42) | Indicates high surge energy absorption efficiency - delivers tighter voltage limiting than typical silicon avalanche diodes. |
Applications
| Automotive Sensor Interface | Industrial Digital I/O Protection |
|---|---|
Use Scenario: Protecting LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from load dump and ESD in vehicle cabins. IC Role / Device Role / Timing Role: Bi-directional voltage clamp placed directly at connector entry point to shunt transients before reaching ASIC input pins. Use Value: Maintains signal integrity under ISO 7637-2 Pulse 1/2a/5a surges while supporting <5 µA leakage for microamp-level sensor bias currents. |
Use Scenario: Safeguarding PLC digital input modules against field-wiring induced surges from solenoid switching and motor contactors. IC Role / Device Role / Timing Role: Primary front-end TVS on 24 V DC input channels, coordinated with series impedance and filtering. Use Value: Withstands repeated 800 W surges without degradation, enabling >100,000 surge cycles per IEC 61000-4-5 compliance testing. |
| Telecom Line Interface | Consumer USB Port ESD Protection |
Use Scenario: Shielding RS-485 transceivers in base station backhaul links from lightning-induced common-mode transients on twisted-pair lines. IC Role / Device Role / Timing Role: Paired bi-directional TVS on differential pair (A/B lines), referenced to local ground with low-inductance layout. Use Value: 18.2 V clamping ensures transceiver I/O remains within absolute maximum ratings even during 4 kV IEC 61000-4-5 surges. |
Use Scenario: Adding secondary surge protection on USB 2.0 D+/D− lines behind primary ESD array in smart home hubs and set-top boxes. IC Role / Device Role / Timing Role: High-power backup clamp activated only during extreme events exceeding primary ESD diode capacity. Use Value: 800 W rating absorbs multi-kV ESD bursts that would otherwise cause latch-up or gate oxide rupture in USB PHY ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ11CA | Same VWM (11 V), identical DO-214AA package, but lower PPPM (600 W) and higher VC (19.9 V at 36.2 A). | Rated for lower surge energy; suitable for consumer-grade designs where IEC 61000-4-5 Level 3 suffices. | Select SMBJ11CA only if system-level surge testing does not require full 800 W capability or if cost optimization outweighs headroom needs. |
| SMCJ11CA | Same electrical specs (VWM=11 V, VC=18.2 V), but larger DO-214AB (SMC) package with higher PPPM (1500 W) and lower RθJA (30 °C/W). | Requires more PCB area; preferred for high-reliability industrial power supplies needing extended surge endurance. | Choose SMCJ11CA when thermal management is constrained or when legacy designs already use SMC footprint and require upgrade path. |
Compared with SMB8J11C-E3/52, SMBJ11CA offers reduced surge margin and higher clamping voltage, while SMCJ11CA delivers superior power handling and thermal performance at the cost of board space - making SMB8J11C-E3/52 the optimal balance of compactness, AEC-Q101 compliance, and 800 W protection for space-constrained automotive modules.
Availability
SMB8J11C-E3/52 is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial digital I/O protection, telecom line interfaces, and consumer USB port ESD protection requiring stable component supply and AEC-Q101 qualification.
Supply support for SMB8J11C-E3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade validation.
The SMB8JxxCA series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-density, AEC-Q101-compliant transient suppression in harsh-environment automotive and industrial control systems.
FAQ
What is the clamping voltage of SMB8J11C-E3/52 under maximum surge conditions?
The SMB8J11C-E3/52 has a maximum clamping voltage (VC) of 18.2 V when subjected to its rated peak pulse current of 44.0 A with a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and confirmed in Vishay's datasheet revision 12-Nov-12, ensuring predictable overvoltage limiting for downstream ICs in real-world surge events.
Is SMB8J11C-E3/52 suitable for automotive applications?
Yes, SMB8J11C-E3/52 is AEC-Q101 qualified and explicitly listed in Vishay's automotive-grade product documentation. Its construction - including glass-passivated junction, MSL Level 1 rating, and -55 °C to +150 °C operating range - meets requirements for engine control units, body electronics, and ADAS sensor modules where reliability under thermal and electrical stress is mandatory.
What does the "C" suffix in SMB8J11C-E3/52 indicate?
The "C" in SMB8J11C-E3/52 denotes bi-directional configuration, distinguishing it from uni-directional variants like SMB8J11A. This means the device provides symmetrical clamping for both positive and negative transients without polarity dependence - essential for protecting AC-coupled lines, differential buses (e.g., LIN, RS-485), and floating sensor outputs.
How does the DO-214AA package of SMB8J11C-E3/52 affect thermal performance?
The DO-214AA (SMB) package of SMB8J11C-E3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 72 °C/W when mounted on 0.2" × 0.2" copper pads per lead. This necessitates adherence to Vishay's recommended pad layout to achieve full 800 W rating; reducing pad size or using thinner copper will derate power handling proportionally per Figure 2 in the datasheet.
Can SMB8J11C-E3/52 replace SMBJ11CA in an existing design?
SMB8J11C-E3/52 can serve as a functional upgrade to SMBJ11CA due to identical VWM (11 V), matching DO-214AA footprint, and improved specs: higher PPPM (800 W vs. 600 W) and lower clamping voltage (18.2 V vs. 19.9 V). No PCB changes are needed, but verify layout thermal margins support the increased surge energy absorption capability of SMB8J11C-E3/52.
SMB8J11C-E3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 20.1V
- Current - Peak Pulse (10/1000µs):
- 39.8A
- Power - Peak Pulse:
- 800W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB8J11C-E3/52 FAQ
1.How can I place an order for SMB8J11C-E3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB8J11C-E3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB8J11C-E3/52 reliable?
The price and inventory of SMB8J11C-E3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB8J11C-E3/52 is usually 5 days.
3.What payment methods are accepted for SMB8J11C-E3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB8J11C-E3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB8J11C-E3/52?
SMB8J11C-E3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB8J11C-E3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB8J11C-E3/52?
For technical support, including SMB8J11C-E3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB8J11C-E3/52 requirements.
6.How does Aetrix verify that SMB8J11C-E3/52 is sourced from the original manufacturer or authorized distributors?
All SMB8J11C-E3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB8J11C-E3/52 meets industry standards.
7.What is the process for return or replacement of SMB8J11C-E3/52?
All SMB8J11C-E3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMB8J11C-E3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB8J11C-E3/52 part is unused and in its original packaging.
Return procedure for SMB8J11C-E3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB8J11C-E3/52 Tags

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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