Vishay General Semiconductor - Diodes Division SMB8J22C-E3/5B
- Part No.:
- SMB8J22C-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB8J22C-E3/5B.pdf
- Description:
- TVS DIODE 22VWM 39.4VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMB8J22C-E3/5B from Vishay General Semiconductor is a bi-directional transient voltage suppressor (TVS) diode in DO-214AA (SMB) package, designed for high-energy surge protection on signal and power lines. It features 22 V stand-off voltage (VWM), 35.5 V clamping voltage (VC) at 22.5 A peak pulse current (IPPM), and 800 W peak pulse power (PPPM) with 10/1000 μs waveform - deployed in automotive sensor interfaces and industrial I/O protection.
For engineers reviewing the SMB8J22C-E3/5B datasheet, SMB8J22C-E3/5B pinout, SMB8J22C-E3/5B application, or SMB8J22C-E3/5B equivalent, key selection criteria include bi-directional clamping capability, AEC-Q101 qualification, RoHS-compliant matte tin terminations, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This bi-directional TVS diode uses a glass-passivated silicon junction to achieve sub-nanosecond response time and low incremental surge resistance. Its symmetrical breakdown behavior (VBR min/max = 24.4 V / 26.9 V at 1 mA) ensures balanced overvoltage clamping across both polarities without polarity-dependent design constraints.
Thermal performance is defined by RθJA = 72 °C/W and RθJL = 20 °C/W, supporting operation from –55 °C to +150 °C junction temperature. It meets MSL Level 1 per J-STD-020 with 260 °C reflow peak and is qualified to AEC-Q101 for automotive under-hood applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 22 V - maximum continuous reverse operating voltage before clamping initiates |
| VBR (min/max) | 24.4 V / 26.9 V at 1 mA - guaranteed symmetric breakdown threshold for bi-directional surge suppression |
| VC @ IPPM | 35.5 V at 22.5 A - clamped voltage during 10/1000 μs surge, limiting downstream IC stress |
| PPPM | 800 W - peak pulse power handling capacity under standardized transient waveform |
| ID @ VWM | 1.0 μA - ultra-low leakage current preserving signal integrity in high-impedance circuits |
| TJ max. | 150 °C - enables use in engine control units and powertrain modules with elevated ambient temperatures |
| Package | DO-214AA (SMB) - surface-mount outline with 0.220" body length and cathode band marking |
Pinout & Package
DO-214AA (SMB) package: molded plastic case with matte tin-plated leads, compliant with J-STD-002 solderability and JESD22-B102 mechanical shock standards. Bi-directional configuration has no polarity marking; terminals are symmetrical anode/cathode pair.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode / Cathode (symmetrical) | Bi-directional surge path | Either terminal accepts positive or negative transients - no orientation required during placement |
| Case | Non-connected thermal mass | Plastic body provides electrical isolation; thermal dissipation relies on PCB copper pad area (0.2" × 0.2") |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity bias, and HTRB testing |
| Glass passivated junction | Enables stable VBR tolerance and long-term parameter stability under repeated surge stress |
| MSL Level 1 rating | Allows unlimited floor life and single-reflow processing at 260 °C peak without moisture-induced failure |
| Low clamping ratio (VC/VBR ≈ 1.32) | Minimizes overvoltage overshoot during fast transients, protecting sensitive 3.3 V and 5 V logic interfaces |
| RoHS-compliant E3 suffix | Meets JEDEC JESD201 Class 1A whisker resistance, suitable for high-reliability industrial control systems |
Applications
| Automotive Sensor Protection | Industrial CAN Bus Interface |
|---|---|
|
Use Scenario: Protecting ABS wheel speed sensors exposed to load dump and ISO 7637-2 pulse 5a transients. IC Role / Device Role / Timing Role: Bi-directional clamping element placed directly at connector entry point to shunt surge energy before reaching signal conditioning amplifier. Use Value: Limits induced voltage to ≤35.5 V during 22.5 A surges, preventing latch-up in downstream op-amps and ADCs rated for 36 V absolute maximum. |
Use Scenario: Guarding CANH/CANL lines in vehicle body control modules against ESD and inductive switching noise. IC Role / Device Role / Timing Role: Low-capacitance TVS pair (one per line) suppressing ±25 kV contact ESD per IEC 61000-4-2 while maintaining <100 pF total line capacitance. Use Value: Maintains CAN signal integrity up to 1 Mbps with <1 ns response time and no data corruption during repetitive 40 A surge events. |
| Smart Meter Power Supply Input | PLC Analog Input Module |
|
Use Scenario: Safeguarding AC/DC converter input stage in utility smart meters subjected to lightning-induced surges on mains lines. IC Role / Device Role / Timing Role: Primary-level TVS mounted upstream of bridge rectifier to clamp common-mode transients before bulk capacitor charging circuitry. Use Value: Absorbs 800 W peak pulses without degradation, enabling compliance with IEC 61000-4-5 Level 4 (4 kV line-earth) immunity requirements. |
Use Scenario: Protecting 4–20 mA current loop inputs in programmable logic controllers from field wiring faults and electrostatic discharge. IC Role / Device Role / Timing Role: Bi-directional TVS placed across input terminals to clamp reverse polarity connection and surge events simultaneously. Use Value: Withstands 1000+ surge cycles at 22.5 A while maintaining <1 μA leakage at 22 V, ensuring analog accuracy remains within 0.1% full-scale error. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ22CA | Same VWM (22 V), identical DO-214AA package, but lower PPPM (600 W vs. 800 W) and higher VC (37.5 V vs. 35.5 V) | Limited to lower-energy transients; not recommended for AEC-Q101-critical automotive designs | Select SMBJ22CA only when system-level surge testing confirms 600 W margin is sufficient and AEC-Q101 is not mandated. |
| SMCJ22CA | Same VWM and bi-directionality, but larger DO-214AB (SMC) package with 1500 W PPPM and lower VC (35.0 V) | Requires PCB layout change due to 2.5× larger footprint; better suited for high-power industrial motor drives | Choose SMCJ22CA when board space permits and peak surge energy exceeds 800 W - e.g., factory automation PLC backplanes. |
Compared with SMBJ22CA and SMCJ22CA, SMB8J22C-E3/5B delivers optimal balance of AEC-Q101 compliance, 800 W surge capacity, and compact DO-214AA footprint - making it the preferred choice for space-constrained automotive and industrial edge nodes where qualification and power density are jointly critical.
Availability
SMB8J22C-E3/5B is available at Aetrix Electronics and suitable for automotive sensor modules, industrial CAN networks, and smart meter power supplies requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SMB8J22C-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.
The SMB8J series belongs to Vishay's TRANSZORB® family of high-power-density TVS diodes, engineered specifically for AEC-Q101-compliant transient protection in harsh-environment electronic control units.
FAQ
What is the clamping voltage of SMB8J22C-E3/5B at its rated peak pulse current?
The SMB8J22C-E3/5B exhibits a maximum clamping voltage (VC) of 35.5 V when subjected to its rated peak pulse current (IPPM) of 22.5 A under the standard 10/1000 μs waveform. This value is measured at the device terminals with specified PCB mounting conditions (0.2" × 0.2" copper pads per lead), and defines the upper voltage limit imposed on protected circuitry during surge events. The SMB8J22C-E3/5B maintains this clamping performance across its full operating temperature range.
Is SMB8J22C-E3/5B suitable for automotive applications requiring AEC-Q101 qualification?
Yes, SMB8J22C-E3/5B is explicitly AEC-Q101 qualified per the Vishay datasheet (Document Number 88422, Revision 12-Nov-12). It undergoes rigorous stress testing including temperature cycling, high-temperature reverse bias, and unbiased highly accelerated stress testing to ensure reliability in automotive under-hood and chassis-mounted electronics. The HE3 suffix denotes AEC-Q101 qualification, but SMB8J22C-E3/5B carries the commercial E3 suffix and is still AEC-Q101 qualified as confirmed in the "MECHANICAL DATA" section.
How does the bi-directional configuration of SMB8J22C-E3/5B affect PCB layout and polarity marking?
The SMB8J22C-E3/5B has no polarity marking - its bi-directional structure means either terminal functions identically as anode or cathode depending on transient polarity. No orientation is required during placement, eliminating risk of reverse installation. PCB layout follows standard DO-214AA pad dimensions (0.220" × 0.130"), and the absence of cathode band simplifies silkscreen and automated optical inspection. This symmetry reduces BOM complexity in differential or AC-coupled protection schemes.
What is the maximum reverse leakage current of SMB8J22C-E3/5B at its stand-off voltage?
The SMB8J22C-E3/5B specifies a maximum reverse leakage current (ID) of 1.0 μA at its stand-off voltage (VWM) of 22 V and ambient temperature of 25 °C. This ultra-low leakage preserves signal integrity in high-impedance sensor front-ends and battery-powered devices, where even nanoamp-level currents impact power budget or measurement accuracy. Leakage remains below 5 μA up to 125 °C junction temperature per derating curves in the datasheet.
Does SMB8J22C-E3/5B meet RoHS and lead-free soldering requirements?
Yes, SMB8J22C-E3/5B carries the E3 suffix, indicating full RoHS compliance per Directive 2011/65/EU and halogen-free status per JEDEC JS709A. Its matte tin-plated leads are compatible with lead-free reflow profiles up to 260 °C peak temperature and meet J-STD-002 solderability requirements. The device also satisfies JESD201 Class 1A whisker resistance, making it suitable for high-reliability industrial and medical applications where tin whisker growth must be mitigated.
SMB8J22C-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 22V
- Voltage - Breakdown (Min):
- 24.4V
- Voltage - Clamping (Max) @ Ipp:
- 39.4V
- Current - Peak Pulse (10/1000µs):
- 20.3A
- Power - Peak Pulse:
- 800W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB8J22C-E3/5B FAQ
1.How can I place an order for SMB8J22C-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB8J22C-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB8J22C-E3/5B reliable?
The price and inventory of SMB8J22C-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB8J22C-E3/5B is usually 5 days.
3.What payment methods are accepted for SMB8J22C-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB8J22C-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB8J22C-E3/5B?
SMB8J22C-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB8J22C-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB8J22C-E3/5B?
For technical support, including SMB8J22C-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB8J22C-E3/5B requirements.
6.How does Aetrix verify that SMB8J22C-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMB8J22C-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB8J22C-E3/5B meets industry standards.
7.What is the process for return or replacement of SMB8J22C-E3/5B?
All SMB8J22C-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMB8J22C-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB8J22C-E3/5B part is unused and in its original packaging.
Return procedure for SMB8J22C-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB8J22C-E3/5B Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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onsemi

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Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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Diodes Incorporated
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