Vishay General Semiconductor - Diodes Division SMB8J26C-E3/5B
- Part No.:
- SMB8J26C-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB8J26C-E3/5B.pdf
- Description:
- TVS DIODE 26VWM 46.6VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMB8J26C-E3/5B from Vishay General Semiconductor is a bi-directional transient voltage suppressor (TVS) diode in DO-214AA (SMB) package, designed for high-energy surge protection on signal and power lines. It features 26 V stand-off voltage (VWM), 42.1 V maximum clamping voltage at 19.0 A peak pulse current, and 800 W peak pulse power rating with 10/1000 µs waveform. Used to protect automotive sensor interfaces and industrial I/O circuits against ESD and load dump transients.
For engineers reviewing the SMB8J26C-E3/5B datasheet, SMB8J26C-E3/5B pinout, SMB8J26C-E3/5B application, or SMB8J26C-E3/5B equivalent, key selection criteria include bi-directional clamping capability, AEC-Q101 qualification, RoHS-compliant matte tin terminations, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This bi-directional TVS operates symmetrically across both polarities, enabling robust protection of AC-coupled or differential signal paths without polarity constraints. Its glass-passivated junction ensures stable breakdown behavior and low leakage (<1.0 µA at 26 V), while the low incremental surge resistance supports fast energy dissipation during 10/1000 µs transients.
The device meets MSL Level 1 per J-STD-020 with 260 °C lead-free reflow peak temperature tolerance and is qualified to AEC-Q101 for automotive under-hood applications. Thermal resistance is characterized at RθJA = 72 °C/W and RθJL = 20 °C/W, supporting reliable operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 26 V - Maximum continuous reverse operating voltage before clamping begins; defines safe signal swing range for protected line. |
| VBR min/max | 28.9 V / 31.9 V at 1.0 mA - Confirmed breakdown threshold window ensures predictable turn-on during overvoltage events. |
| VC @ IPPM | 42.1 V at 19.0 A - Clamping voltage under full 10/1000 µs surge; limits downstream voltage stress to safe levels. |
| PPPM | 800 W - Peak pulse power handling capacity; determines survivability against standardized lightning/surge waveforms. |
| ID @ VWM | <1.0 µA - Reverse leakage at rated stand-off voltage; critical for low-power sensor and battery-backed circuit integrity. |
| TJ max | 150 °C - Maximum junction temperature; enables deployment in engine control units and industrial motor drives. |
| Package | DO-214AA (SMB) - Standardized surface-mount outline with 0.220" x 0.155" footprint; compatible with IPC-7351B SMBJ land pattern. |
Pinout & Package
DO-214AA (SMB) package: molded plastic case with two terminals; no polarity marking for bi-directional types. Cathode band absent; symmetrical construction allows mounting in either orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bi-directional surge conduction path | Both terminals function identically; current flows from either terminal to the other during overvoltage, enabling AC line protection without orientation dependency. |
| Case | Non-electrical mechanical interface | Plastic body provides insulation and mechanical anchoring; no thermal or electrical connection to internal die. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensor interfaces under temperature cycling, humidity, and mechanical shock stress. |
| Glass passivated junction | Ensures stable VBR over lifetime and improved resistance to moisture-induced degradation compared to epoxy-passivated alternatives. |
| MSL Level 1 rating | Supports single-reflow assembly without baking; compatible with standard lead-free reflow profiles peaking at 260 °C. |
| Matte tin plated leads | Meets J-STD-002 solderability and JESD22-B102 wetting balance requirements; eliminates whisker risk per JESD201 Class 1A (E3 suffix). |
| UL 94 V-0 molding compound | Self-extinguishing encapsulant prevents flame propagation in high-density PCB assemblies exposed to fault-induced arcing. |
Applications
| Automotive Sensor Protection | Industrial I/O Interface |
|---|---|
Use Scenario: Protecting CAN FD and LIN bus transceivers from ISO 7637-2 pulse 1/2a/5a transients in vehicle ECUs. IC Role / Device Role / Timing Role: Bi-directional clamping element placed directly at connector entry point to shunt surge energy before reaching PHY layer. Use Value: Limits induced voltage to ≤42.1 V during 19.0 A 10/1000 µs surge, preserving transceiver functionality and meeting OEM EMC immunity requirements. |
Use Scenario: Safeguarding 24 V DC analog input channels (e.g., 4–20 mA loops) in PLC modules against field-wiring faults and inductive kickback. IC Role / Device Role / Timing Role: Primary overvoltage clamp on signal line, coordinated with series impedance and filtering to meet IEC 61000-4-5 Level 3 (2 kV) Use Value: Withstands repeated 800 W surges without parameter shift, maintaining long-term accuracy of measurement circuits in factory automation environments. |
| Consumer Power Adapter Input | Telecom Line Card Protection |
Use Scenario: Secondary-side surge suppression on 12 V output rails of AC/DC adapters used in smart home hubs and gateways. IC Role / Device Role / Timing Role: Fast-response clamp limiting transient overshoot during hot-plug or capacitor discharge events. Use Value: Sub-1 ns response time and 42.1 V clamping prevent latch-up in downstream DC-DC controllers and USB PD ICs. |
Use Scenario: Protection of Ethernet PHY front-end circuits (e.g., RJ45 magnetics secondary side) against lightning-induced surges per GR-1089-CORE. IC Role / Device Role / Timing Role: Bi-directional TVS placed across differential pairs to suppress common-mode transients without distorting signal integrity. Use Value: Low capacitance (typ. <100 pF at 0 V) preserves 100BASE-TX signal rise/fall times while clamping ±42.1 V peaks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ26CA-E3/5B | Same VWM (26 V), identical DO-214AA package, but rated for 600 W PPPM (vs. 800 W for SMB8J26C-E3/5B); lower IPPM (14.3 A vs. 19.0 A). | Less suitable for high-energy automotive load dump scenarios; adequate for consumer-grade ESD protection. | Select SMBJ26CA-E3/5B only when system-level surge testing requires ≤600 W capability and cost optimization is prioritized. |
| SMCJ26CA-E3/5B | Same VWM and bi-directionality, but in larger DO-214AB (SMC) package; rated for 1500 W PPPM and 38.2 A IPPM. | Requires larger PCB area and higher thermal mass; better suited for primary-side AC line or 48 V industrial bus protection. | Choose SMCJ26CA-E3/5B when board layout allows larger footprint and system demands >800 W surge margin, such as in solar inverter DC-link protection. |
Compared with SMBJ26CA-E3/5B and SMCJ26CA-E3/5B, SMB8J26C-E3/5B delivers optimal power density-800 W in SMB footprint-making it preferred for space-constrained automotive and industrial modules where 600 W is insufficient but SMC real estate is unavailable.
Availability
SMB8J26C-E3/5B is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial I/O modules, and telecom line card protection requiring stable component supply with AEC-Q101 assurance and RoHS compliance.
Supply support for SMB8J26C-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade qualification.
The SMB8JxxC-A series targets high-reliability transient suppression in automotive and industrial systems, engineered specifically to meet AEC-Q101 and ISO 7637-2 requirements while maintaining compact SMB packaging.
FAQ
What is the peak pulse power rating of SMB8J26C-E3/5B?
The SMB8J26C-E3/5B has a peak pulse power rating (PPPM) of 800 W under the standard 10/1000 µs waveform. This value is measured with the device mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, and it reflects the maximum non-repetitive surge energy the SMB8J26C-E3/5B can safely absorb without degradation. Derating applies above 25 °C ambient.
Is SMB8J26C-E3/5B suitable for automotive applications?
Yes, SMB8J26C-E3/5B is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood and chassis-mounted modules. Its 150 °C maximum junction temperature, MSL Level 1 reflow compatibility, and validation against temperature cycling and mechanical shock make it appropriate for engine control units, ADAS sensors, and body control modules where SMB8J26C-E3/5B serves as primary transient protection.
What does the "C" in SMB8J26C-E3/5B indicate?
The "C" in SMB8J26C-E3/5B denotes bi-directional configuration. Unlike uni-directional variants (e.g., SMB8J26A-E3/5B), the SMB8J26C-E3/5B provides symmetrical clamping for both positive and negative transients, making it ideal for protecting AC-coupled signals, differential buses like CAN or RS-485, and ungrounded power rails where polarity reversal may occur.
How does SMB8J26C-E3/5B compare to SMBJ26CA-E3/5B?
SMB8J26C-E3/5B offers higher surge capability than SMBJ26CA-E3/5B: 800 W PPPM versus 600 W, and 19.0 A IPPM versus 14.3 A, while sharing the same DO-214AA package and 26 V VWM. Both are bi-directional and AEC-Q101 qualified, but SMB8J26C-E3/5B is specified for more demanding surge environments such as automotive load dump, whereas SMBJ26CA-E3/5B targets general-purpose ESD protection.
What is the maximum clamping voltage for SMB8J26C-E3/5B at rated surge current?
The maximum clamping voltage (VC) for SMB8J26C-E3/5B is 42.1 V at its rated peak pulse current (IPPM) of 19.0 A under a 10/1000 µs waveform. This value is guaranteed across temperature and represents the upper limit of voltage imposed on the protected circuit during worst-case surge conditions, ensuring downstream ICs remain within absolute maximum ratings when SMB8J26C-E3/5B is correctly applied.
SMB8J26C-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 26V
- Voltage - Breakdown (Min):
- 28.9V
- Voltage - Clamping (Max) @ Ipp:
- 46.6V
- Current - Peak Pulse (10/1000µs):
- 17.2A
- Power - Peak Pulse:
- 800W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB8J26C-E3/5B FAQ
1.How can I place an order for SMB8J26C-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB8J26C-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB8J26C-E3/5B reliable?
The price and inventory of SMB8J26C-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB8J26C-E3/5B is usually 5 days.
3.What payment methods are accepted for SMB8J26C-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB8J26C-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB8J26C-E3/5B?
SMB8J26C-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB8J26C-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB8J26C-E3/5B?
For technical support, including SMB8J26C-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB8J26C-E3/5B requirements.
6.How does Aetrix verify that SMB8J26C-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMB8J26C-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB8J26C-E3/5B meets industry standards.
7.What is the process for return or replacement of SMB8J26C-E3/5B?
All SMB8J26C-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMB8J26C-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB8J26C-E3/5B part is unused and in its original packaging.
Return procedure for SMB8J26C-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB8J26C-E3/5B Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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