Vishay General Semiconductor - Diodes Division SMB8J33CAHE3_B/I
- Part No.:
- SMB8J33CAHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB8J33CAHE3_B/I.pdf
- Description:
- 800W,33V 5%,BIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,038
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Product details
Overview
SMB8J33CAHE3_B/I from Vishay General Semiconductor is a bidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection on signal and power lines. It features a 33 V standoff voltage (VWM), 36.7–40.6 V breakdown voltage (VBR), 53.3 V clamping voltage (VC) at 15 A peak pulse current (IPPM), and 800 W peak pulse power (PPPM) with 10/1000 µs waveform - deployed in automotive sensor interfaces and industrial I/O protection.
For engineers reviewing the SMB8J33CAHE3_B/I datasheet, SMB8J33CAHE3_B/I pinout, SMB8J33CAHE3_B/I application, or SMB8J33CAHE3_B/I equivalent, key selection criteria include AEC-Q101 qualification, bidirectional clamping symmetry, low thermal resistance (RθJL = 20 °C/W), and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This device operates as a voltage-clamped crowbar during transients, leveraging a glass-passivated silicon junction to achieve sub-nanosecond response time and low incremental surge resistance. Its bidirectional architecture ensures symmetrical clamping for AC-coupled or floating lines without polarity sensitivity.
Rated for -55 °C to +150 °C junction temperature, it meets MSL Level 1 per J-STD-020 (260 °C peak reflow), supports 1000× surge cycles at rated IPPM, and maintains <1.0 µA reverse leakage at VWM - enabling reliable operation in harsh automotive under-hood environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - maximum continuous reverse operating voltage before clamping initiates |
| VBR (min/max) | 36.7 V / 40.6 V at 1.0 mA - guaranteed breakdown threshold range defining turn-on consistency |
| VC @ IPPM | 53.3 V at 15.0 A - clamping voltage limiting downstream IC stress during 10/1000 µs surge |
| PPPM | 800 W - peak transient energy absorption capacity under standardized lightning-surge waveform |
| ID @ VWM | ≤1.0 µA - ultra-low leakage preserving signal integrity in high-impedance sensor circuits |
| TJ max. | +150 °C - enables deployment near power electronics or in engine-control units |
| RθJL | 20 °C/W - low junction-to-lead thermal resistance supporting sustained surge duty cycles |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, bidirectional - no polarity marking; symmetric dual-terminal construction with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Transient conduction path | Both terminals function identically; bidirectional clamping requires no orientation during placement |
| Case (body) | Thermal and mechanical interface | Plastic body transfers heat to PCB copper pads; 0.2" × 0.2" (5.0 mm × 5.0 mm) pad layout required for rated PPPM |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including powertrain and ADAS sensor modules |
| Glass passivated junction | Ensures stable VBR over lifetime and immunity to humidity-induced parameter drift |
| MSL Level 1 rating | Enables single-pass reflow at 260 °C peak without moisture-related popcorn failure |
| Low RθJL (20 °C/W) | Permits higher surge repetition rates without thermal runaway in compact layouts |
| UL 94 V-0 molding compound | Meets flame-retardancy requirements for enclosed automotive and industrial enclosures |
Applications
| Automotive CAN Bus Protection | Industrial PLC Analog Input Protection |
|---|---|
Use Scenario: Protecting CAN_H/CAN_L lines from load-dump and ESD events in 12 V vehicle networks. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed across differential pair, absorbing ±30 kV ESD (IEC 61000-4-2) and 10/1000 µs surges up to 800 W. Use Value: Maintains CAN signal integrity below 53.3 V clamping while surviving >1000 surge cycles - critical for ASAM-compliant ECUs. |
Use Scenario: Safeguarding 4–20 mA current-loop inputs in programmable logic controllers against field-wiring transients. IC Role / Device Role / Timing Role: Placed between input terminal and ADC front-end to limit fault voltage during cable disconnect or lightning induction. Use Value: 33 V VWM aligns with loop-supply headroom; 1.0 µA leakage avoids offset error in precision 24-bit sigma-delta converters. |
| Automotive Camera Sensor Interface | Telecom Ethernet PHY Protection |
Use Scenario: Shielding MIPI CSI-2 lanes in surround-view camera modules from board-level ESD and inductive switching noise. IC Role / Device Role / Timing Role: Low-capacitance TVS (typ. <100 pF at 0 V) mounted directly at connector to minimize stub length. Use Value: Bidirectional symmetry prevents signal inversion; 53.3 V VC ensures image sensor I/O stays within absolute maximum ratings during hot-swap events. |
Use Scenario: Protecting 10/100/1000BASE-T PHY transformer center-taps and data lines from induced surges in outdoor telecom cabinets. IC Role / Device Role / Timing Role: Clamping device installed on secondary side of isolation transformer to suppress common-mode transients. Use Value: 800 W PPPM handles GR-1089 Class B surges; AEC-Q101 qualification provides extended reliability margin beyond commercial-grade alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMB8J33CAHM3_B/I | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification | No functional difference; selected when halogen-free compliance is mandated by OEM environmental policy | Direct material substitution where RoHS + halogen-free requirements apply |
| SMAJ33CAHE3_A/H | Same VWM/VBR/VC but lower PPPM (400 W), SMA package (smaller footprint, higher RθJA = 110 °C/W) | Suitable only for lower-energy transients; not recommended for automotive load-dump scenarios requiring 800 W | Use only in space-constrained consumer or non-automotive industrial designs with verified lower surge exposure |
Compared with SMB8J33CAHE3_B/I, the HM3 variant offers identical protection performance with halogen-free materials, while the SMAJ33CAHE3_A/H trades power handling and thermal robustness for smaller size - making SMB8J33CAHE3_B/I the optimal choice for AEC-Q101–mandated 800 W surge immunity.
Availability
SMB8J33CAHE3_B/I is available at Aetrix Electronics and suitable for automotive sensor protection, industrial I/O conditioning, and telecom line interface applications requiring stable component supply, long-term lifecycle support, and AEC-Q101–validated reliability.
Supply support for SMB8J33CAHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on automotive, industrial, and computing markets.
The SMB8JxxCA series targets high-reliability transient suppression in automotive and industrial systems, engineered to meet AEC-Q101 and deliver consistent clamping performance across temperature and lifetime.
FAQ
What is the clamping voltage of SMB8J33CAHE3_B/I at its rated peak pulse current?
The SMB8J33CAHE3_B/I exhibits a maximum clamping voltage (VC) of 53.3 V when subjected to its rated peak pulse current (IPPM) of 15.0 A under the standard 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and guarantees that protected circuitry downstream remains below critical voltage thresholds during surge events. The SMB8J33CAHE3_B/I achieves this with low incremental surge resistance, ensuring predictable voltage limiting across production lots.
Is SMB8J33CAHE3_B/I suitable for automotive applications requiring AEC-Q101 qualification?
Yes, SMB8J33CAHE3_B/I is explicitly AEC-Q101 qualified, as confirmed in Vishay document 88422 (Rev. 09-Jan-2024). Its qualification covers temperature cycling, humidity bias HAST, ESD, and surge endurance testing required for automotive powertrain, body electronics, and ADAS subsystems. The HE3 suffix denotes RoHS-compliant and AEC-Q101–qualified status - making SMB8J33CAHE3_B/I appropriate for under-hood and cabin-mounted control units.
How does the bidirectional configuration of SMB8J33CAHE3_B/I affect its use in circuit design?
The bidirectional configuration of SMB8J33CAHE3_B/I eliminates polarity dependency, allowing placement across AC-coupled or floating signal paths - such as CAN bus differential pairs or Ethernet transformer taps - without regard to anode/cathode orientation. Unlike unidirectional TVS diodes, SMB8J33CAHE3_B/I provides symmetrical clamping in both directions, simplifying layout and avoiding misorientation risks during automated assembly. Its symmetric VBR (36.7–40.6 V) ensures matched turn-on behavior regardless of transient polarity.
What is the thermal resistance profile of SMB8J33CAHE3_B/I, and why does it matter for surge duty cycle?
SMB8J33CAHE3_B/I has a typical junction-to-lead thermal resistance (RθJL) of 20 °C/W and junction-to-ambient (RθJA) of 72 °C/W when mounted on 5.0 mm × 5.0 mm copper pads. The low RθJL enables rapid heat transfer from the silicon junction into the PCB copper, permitting higher surge repetition rates without thermal accumulation. This is critical in applications like motor drive feedback loops or industrial fieldbus nodes where multiple transients may occur within seconds - ensuring SMB8J33CAHE3_B/I remains within its 150 °C TJ limit across repeated events.
Can SMB8J33CAHE3_B/I replace unidirectional TVS diodes in existing designs?
SMB8J33CAHE3_B/I can replace unidirectional TVS diodes only if the circuit topology supports bidirectional clamping - for example, across differential lines or isolated power rails. It must not be substituted in DC-biased single-ended paths (e.g., 5 V supply rail to ground) where unidirectional devices rely on forward conduction for clamping. In such cases, using SMB8J33CAHE3_B/I would allow reverse leakage during normal operation and fail to clamp positive surges effectively. Always verify bias conditions and transient polarity before substituting SMB8J33CAHE3_B/I for unidirectional variants.
SMB8J33CAHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 33V
- Current - Peak Pulse (10/1000µs):
- 15A
- Power - Peak Pulse:
- 800W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB8J33CAHE3_B/I FAQ
1.How can I place an order for SMB8J33CAHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB8J33CAHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB8J33CAHE3_B/I reliable?
The price and inventory of SMB8J33CAHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB8J33CAHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMB8J33CAHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB8J33CAHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB8J33CAHE3_B/I?
SMB8J33CAHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB8J33CAHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB8J33CAHE3_B/I?
For technical support, including SMB8J33CAHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB8J33CAHE3_B/I requirements.
6.How does Aetrix verify that SMB8J33CAHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMB8J33CAHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB8J33CAHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMB8J33CAHE3_B/I?
All SMB8J33CAHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMB8J33CAHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB8J33CAHE3_B/I part is unused and in its original packaging.
Return procedure for SMB8J33CAHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB8J33CAHE3_B/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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