Vishay General Semiconductor - Diodes Division SMB8J7.5CAHE3/5B
- Part No.:
- SMB8J7.5CAHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMB8J7.5CAHE3/5B.pdf
- Description:
- TVS DIODE 7.5VWM 12.9VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMB8J7.5CAHE3/5B from Vishay General Semiconductor is a bidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for high-energy surge protection on signal and power lines. It features a 7.5 V stand-off voltage (VWM), 12.9 V maximum clamping voltage (VC) at 200 A peak pulse current (IPPM), and 800 W peak pulse power (PPPM) with 10/1000 µs waveform - deployed in automotive sensor interfaces and industrial I/O protection.
For engineers reviewing the SMB8J7.5CAHE3/5B datasheet, SMB8J7.5CAHE3/5B pinout, SMB8J7.5CAHE3/5B application, or SMB8J7.5CAHE3/5B equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification, low incremental surge resistance, and compatibility with automated SMT assembly on 0.2" × 0.2" copper pads.
Technical Context
This device operates as a voltage-clamped crowbar during transients, leveraging a glass-passivated silicon junction to achieve sub-nanosecond response time and stable breakdown behavior under repetitive surges. Its bidirectional symmetry enables protection of AC-coupled or differential signal paths without polarity constraints.
Thermal performance is defined by RθJA = 72 °C/W and RθJL = 20 °C/W, supporting operation from –55 °C to +150 °C junction temperature. The device meets MSL Level 1 per J-STD-020 and is qualified to AEC-Q101 for automotive under-hood and chassis applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.5 V - Maximum continuous reverse operating voltage before clamping begins; defines safe signal swing margin in protected circuit. |
| VBR min/max | 8.33 V / 9.21 V at IT = 1.0 mA - Verified breakdown threshold ensures predictable turn-on across production lot and temperature. |
| VC @ IPPM | 12.9 V at IPPM = 200 A - Clamping voltage limits downstream IC stress during 10/1000 µs surge events per ANSI/IEEE C62.35. |
| PPPM | 800 W - Peak power dissipation capability with 10/1000 µs waveform; determines survivability against lightning-induced or inductive-switching transients. |
| ID @ VWM | 1.0 µA - Ultra-low leakage preserves signal integrity and battery life in always-on sensor nodes and low-power interfaces. |
| TJ max | +150 °C - Enables placement near heat sources (e.g., power MOSFETs, motor drivers) without derating in automotive ECUs. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness per AEC specification. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, bidirectional - no polarity marking; symmetrical terminals require no orientation during placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Transient conduction path | Both terminals serve identical roles; bidirectional clamping occurs regardless of surge polarity - simplifies PCB layout for AC or differential lines. |
| Case (cathode band absent) | Thermal and mechanical interface | No cathode marking; thermal path routed through soldered leads to 0.2" × 0.2" copper pads - enables 20 °C/W junction-to-lead thermal resistance. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR over lifetime and humidity exposure - critical for long-term reliability in unsealed automotive modules. |
| MSL Level 1 rating | Supports lead-free reflow up to 260 °C peak without preconditioning - eliminates moisture sensitivity handling overhead in high-volume SMT lines. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (< 1 ns rise time), improving protection margin for 3.3 V and 5 V logic interfaces. |
| Matte tin-plated leads | Guarantees solderability per J-STD-002 and whisker resistance per JESD 201 Class 2 - prevents intermetallic growth in thermal-cycling environments. |
| AEC-Q101 qualification | Validates performance under automotive stress conditions including -55 °C to +125 °C operating range and 1000-hour HTOL testing. |
Applications
| Automotive Sensor Interface | Industrial Digital I/O Protection |
|---|---|
Use Scenario: Protecting CAN FD and LIN bus transceivers from load dump and ISO 7637-2 pulses in engine control units. IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed directly at connector entry point before signal conditioning stage. Use Value: Limits transient voltage to ≤12.9 V during 200 A surges, preserving transceiver integrity without adding propagation delay or signal distortion. |
Use Scenario: Shielding PLC digital input modules from inductive kickback when switching solenoids and relays. IC Role / Device Role / Timing Role: Primary surge shunt on 24 V DC input line, coordinated with upstream fuse and series impedance. Use Value: Absorbs 800 W peak energy while maintaining <1 µA leakage at 7.5 V - avoids false triggering and maintains high-impedance sensing accuracy. |
| USB Type-C Port Protection | Automotive Camera Power Line |
Use Scenario: Safeguarding USB 2.0 D+/D− lines against ESD and cable discharge events in automotive infotainment head units. IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp integrated into ESD protection array adjacent to connector. Use Value: Delivers 12.9 V clamping at 200 A with no polarity dependency - protects both data lines simultaneously without signal inversion or timing skew. |
Use Scenario: Suppressing load dump transients on 12 V power rail feeding ADAS camera modules mounted behind rearview mirrors. IC Role / Device Role / Timing Role: Secondary overvoltage clamp downstream of primary TVS, placed near camera PMIC input. Use Value: Withstands repeated 800 W surges while operating up to +150 °C ambient - ensures uninterrupted video stream during engine cranking and alternator regulation faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ7.5CAHE3/5B | Unidirectional variant with same VWM/VBR/VC but asymmetric conduction - conducts only in reverse direction. | Requires explicit polarity alignment; unsuitable for AC or differential signals without external biasing. | Select SMBJ7.5CAHE3/5B only when protecting unidirectional DC rails where forward conduction must be blocked. |
| SMAJ7.5CAHE3/5B | Lower PPPM (400 W) and IPPM (100 A); same VWM/VBR/VC specs but in smaller SMA (DO-214AC) package. | Limited energy handling makes it appropriate for board-level ESD only - not for system-level surges like ISO 7637-2 Pulse 5a. | Choose SMAJ7.5CAHE3/5B for space-constrained consumer electronics where full 800 W surge immunity is unnecessary. |
Compared with SMBJ7.5CAHE3/5B and SMAJ7.5CAHE3/5B, SMB8J7.5CAHE3/5B uniquely delivers 800 W bidirectional clamping in SMB package with AEC-Q101 qualification - making it the only option among the three for automotive-grade, polarity-agnostic, high-energy protection.
Availability
SMB8J7.5CAHE3/5B is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial PLC I/O modules, USB Type-C port protection, and ADAS camera power line protection requiring stable component supply and long-term lifecycle support.
Supply support for SMB8J7.5CAHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices with emphasis on reliability, power density, and automotive qualification.
The SMB8J series targets high-energy transient suppression in space-constrained, thermally demanding environments - especially automotive and industrial systems exposed to ISO 7637-2 and IEC 61000-4-5 threats.
FAQ
What is the clamping voltage of SMB8J7.5CAHE3/5B at its rated peak pulse current?
The SMB8J7.5CAHE3/5B has a maximum clamping voltage (VC) of 12.9 V when subjected to its rated peak pulse current (IPPM) of 200 A with a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and ensures downstream components see limited overvoltage during surge events. The SMB8J7.5CAHE3/5B maintains this clamping performance across its specified operating temperature range.
Is SMB8J7.5CAHE3/5B suitable for automotive applications?
Yes, SMB8J7.5CAHE3/5B is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood and chassis-mounted modules. Its construction - glass-passivated junction, MSL Level 1 rating, and operation from –55 °C to +150 °C - meets stringent automotive reliability requirements. The SMB8J7.5CAHE3/5B is commonly used in engine control units, ADAS cameras, and body control modules.
How does the bidirectional nature of SMB8J7.5CAHE3/5B affect PCB layout?
The SMB8J7.5CAHE3/5B has no polarity marking and symmetric terminals, eliminating orientation constraints during placement. This simplifies layout for AC-coupled lines, differential buses (e.g., CAN, RS-485), and dual-rail power domains. Unlike unidirectional TVS diodes, the SMB8J7.5CAHE3/5B requires no cathode alignment - reducing assembly errors and enabling compact, mirrored protection schemes.
What is the maximum leakage current of SMB8J7.5CAHE3/5B at its stand-off voltage?
The SMB8J7.5CAHE3/5B exhibits a maximum reverse leakage current (ID) of 1.0 µA at its stand-off voltage (VWM) of 7.5 V and TA = 25 °C. This ultra-low leakage preserves signal integrity in high-impedance sensor inputs and extends battery life in always-on automotive subsystems. Leakage remains within specification up to +125 °C ambient per datasheet derating curves.
Does SMB8J7.5CAHE3/5B meet RoHS and halogen-free requirements?
The SMB8J7.5CAHE3/5B carries the "HE3" suffix, indicating it is RoHS-compliant and AEC-Q101 qualified. It is not halogen-free; for halogen-free compliance, the equivalent part is SMB8J7.5CAHM3/5B. Both variants meet JEDEC JESD201 Class 2 whisker resistance and J-STD-002 solderability standards - confirming SMB8J7.5CAHE3/5B's suitability for lead-free manufacturing.
SMB8J7.5CAHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.33V
- Voltage - Clamping (Max) @ Ipp:
- 12.9V
- Current - Peak Pulse (10/1000µs):
- 62A
- Power - Peak Pulse:
- 800W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMB8J7.5CAHE3/5B FAQ
1.How can I place an order for SMB8J7.5CAHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMB8J7.5CAHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMB8J7.5CAHE3/5B reliable?
The price and inventory of SMB8J7.5CAHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMB8J7.5CAHE3/5B is usually 5 days.
3.What payment methods are accepted for SMB8J7.5CAHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMB8J7.5CAHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMB8J7.5CAHE3/5B?
SMB8J7.5CAHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMB8J7.5CAHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMB8J7.5CAHE3/5B?
For technical support, including SMB8J7.5CAHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMB8J7.5CAHE3/5B requirements.
6.How does Aetrix verify that SMB8J7.5CAHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMB8J7.5CAHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMB8J7.5CAHE3/5B meets industry standards.
7.What is the process for return or replacement of SMB8J7.5CAHE3/5B?
All SMB8J7.5CAHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMB8J7.5CAHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMB8J7.5CAHE3/5B part is unused and in its original packaging.
Return procedure for SMB8J7.5CAHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMB8J7.5CAHE3/5B Tags

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onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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Diodes Incorporated
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