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Infineon Technologies SMBD7000E6327HTSA1
- Part No.:
- SMBD7000E6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SMBD7000E6327HTSA1.pdf
- Description:
- DIODE ARRAY GP 100V 200MA SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:31,537
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Product details
Overview
SMBD7000E6327HTSA1 from Infineon Technologies is a silicon dual-switching diode array in SOT-23 package, configured as two independent high-speed switching diodes sharing a common cathode. It features 100 V reverse voltage rating, 200 mA forward current, and 4 ns reverse recovery time, enabling use in high-frequency signal routing and clamping circuits in automotive infotainment power management.
For engineers reviewing the SMBD7000E6327HTSA1 datasheet, SMBD7000E6327HTSA1 pinout, SMBD7000E6327HTSA1 application, or SMBD7000E6327HTSA1 equivalent, key selection criteria include reverse recovery time (trr ≤ 4 ns), low forward voltage at 100 mA (VF ≤ 1.1 V), thermal resistance (RthJS ≤ 360 K/W), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual-diode array implements two monolithic silicon PN junctions in a single SOT-23-3L package with shared cathode (pin 2), supporting independent anode control on pins 1 and 3. Its fast switching behavior is enabled by low junction capacitance (CT ≤ 2 pF at 0 V) and optimized carrier lifetime.
The device operates across -65 °C to +150 °C junction temperature range and meets AEC-Q101 stress test requirements for automotive applications, including HTRB, HTGB, and temperature cycling. Thermal design relies on RthJS ≤ 360 K/W to maintain Tj ≤ 150 °C under 330 mW total dissipation at TS ≤ 28 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 100 V - supports biasing and clamping in 48 V automotive subsystems without breakdown |
| Forward Current (IF) | 200 mA DC - sufficient for logic-level signal steering and low-power rail clamping |
| Reverse Recovery Time (trr) | 4 ns - enables reliable operation up to ~100 MHz switching frequencies in pulse shaping |
| Junction Capacitance (CT) | 2 pF at 0 V, 1 MHz - minimizes signal distortion in RF detector and sampling circuits |
| Thermal Resistance (RthJS) | ≤360 K/W - allows 330 mW power dissipation with ≤120 K temperature rise above solder point |
| Operating Temperature (Tj) | -65 °C to +150 °C - qualified for under-hood automotive environments per AEC-Q101 |
Pinout & Package
Package: SOT-23-3L (standard JEDEC TO-236AB), surface-mount, RoHS-compliant, tape-and-reel packaging (3,000 pcs/reel, ø180 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode 1 | Independent input path for first switching channel; routed to PCB trace with minimal inductance |
| Pin 2 | Common Cathode | Shared output node for both diodes; must be connected to lowest potential reference in layout |
| Pin 3 | Anode of Diode 2 | Independent input path for second switching channel; electrically isolated from Pin 1 |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 Qualified | Validated for automotive use including temperature cycling, HTRB, and mechanical shock per Rev G standard |
| Low trr (≤4 ns) | Reduces switching loss and cross-conduction risk in high-frequency multiplexers and sample-and-hold circuits |
| Common-cathode dual configuration | Enables compact OR-ing, level-shifting, or bidirectional clamping with single-package footprint savings |
| RoHS-compliant SOT-23 | Meets EU Directive 2011/65/EU; lead-free terminations compatible with standard reflow profiles |
Applications
| Automotive Signal Clamping | High-Speed Logic Level Translation |
|---|---|
Use Scenario: Protecting CAN FD transceiver inputs from ESD-induced voltage spikes in vehicle body control modules. IC Role / Device Role / Timing Role: Dual-diode clamping network limiting transient voltages to ±12 V while preserving signal integrity below 5 MHz. Use Value: Prevents latch-up in downstream PHY ICs using 100 V VR rating and sub-4 ns response to 8/20 µs surges. | Use Scenario: Translating 3.3 V microcontroller GPIO outputs to 5 V logic thresholds in dashboard display interface. IC Role / Device Role / Timing Role: Passive level shifter using forward-biased diode drop (VF ≈ 0.7 V) with matched conduction paths. Use Value: Eliminates need for active translators; maintains <1 ns skew between channels due to monolithic die matching. |
| RF Detector Input Protection | Dual-Channel Pulse Shaping |
Use Scenario: Shielding RF envelope detector inputs in AM/FM tuner modules from antenna-coupled transients. IC Role / Device Role / Timing Role: Low-capacitance (2 pF) front-end clamp preventing detector saturation during strong signal bursts. Use Value: Preserves detector sensitivity down to -85 dBm while blocking >100 V spikes without parasitic resonance. | Use Scenario: Conditioning TTL pulses from two separate sensors before feeding into FPGA capture inputs. IC Role / Device Role / Timing Role: Simultaneous edge sharpening and amplitude limiting via dual-anode clamping to fixed reference. Use Value: Achieves <0.5 ns inter-channel delay mismatch and consistent 1.1 V output swing across -40 °C to +125 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54C,115 (Nexperia) | Same SOT-23-3L, common-cathode; trr = 5 ns (vs. 4 ns), VF = 0.8 V @ 10 mA (vs. 0.67 V) | Marginally slower recovery limits use above 80 MHz; higher VF increases conduction loss in low-voltage rails | Select when cost sensitivity outweighs 1 ns trr advantage and thermal margin is ample |
| NSR0230HT1G (ON Semiconductor) | Single diode in SOD-123; no dual configuration; trr = 4 ns, VF = 0.5 V @ 100 mA | Requires two devices and extra board area; lacks integrated dual-channel timing correlation | Choose only if discrete placement flexibility or lower VF dominates over space and matching constraints |
Compared with BAT54C and NSR0230HT1G, SMBD7000E6327HTSA1 uniquely delivers matched dual-channel timing (trr ≤ 4 ns), AEC-Q101 qualification, and common-cathode integration-critical for space-constrained automotive signal conditioning where channel-to-channel skew and reliability are non-negotiable.
Availability
SMBD7000E6327HTSA1 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial sensor interface modules, and high-frequency test equipment requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for SMBD7000E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
SMBD7000E6327HTSA1 belongs to Infineon's AEC-Q101-qualified discrete diode portfolio, engineered specifically for high-reliability signal routing and transient protection in automotive powertrain and chassis control units.
FAQ
Is SMBD7000E6327HTSA1 pin-compatible with MMBD7000 series?
Yes - SMBD7000E6327HTSA1 uses the same SOT-23-3L package and identical pin 1 (Anode 1), pin 2 (Common Cathode), pin 3 (Anode 2) assignment as MMBD7000 variants. Electrical specs match within datasheet tolerances, enabling direct substitution in existing layouts without redesign.
What is the maximum allowable soldering temperature profile for this device?
The SMBD7000E6327HTSA1 is rated for standard Pb-free reflow per JEDEC J-STD-020. Peak temperature must not exceed 260 °C for ≤30 seconds, with ramp-up rate ≤3 °C/s and ramp-down rate ≤6 °C/s. Preheat (150–200 °C) duration should be 60–120 seconds.
Does this diode array support reverse-biased operation above 50 V at elevated temperatures?
Yes - at TA = 150 °C, IR remains ≤100 µA at VR = 50 V, and VR rating holds at 100 V up to TJ = 150 °C. Derating is not required below 100 V, but thermal design must ensure junction temperature stays within limit under sustained load.
Can SMBD7000E6327HTSA1 be used in AC-coupled RF signal paths?
Yes - its 2 pF junction capacitance at 0 V and low series resistance (<1 Ω) make it suitable for RF coupling up to 500 MHz. However, forward bias must be avoided; operation must remain in reverse or zero-bias region to prevent nonlinear distortion and insertion loss degradation.
SMBD7000E6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 100 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
SMBD7000E6327HTSA1 FAQ
1.How can I place an order for SMBD7000E6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBD7000E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBD7000E6327HTSA1 reliable?
The price and inventory of SMBD7000E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBD7000E6327HTSA1 is usually 5 days.
3.What payment methods are accepted for SMBD7000E6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBD7000E6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBD7000E6327HTSA1?
SMBD7000E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBD7000E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBD7000E6327HTSA1?
For technical support, including SMBD7000E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBD7000E6327HTSA1 requirements.
6.How does Aetrix verify that SMBD7000E6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All SMBD7000E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBD7000E6327HTSA1 meets industry standards.
7.What is the process for return or replacement of SMBD7000E6327HTSA1?
All SMBD7000E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SMBD7000E6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBD7000E6327HTSA1 part is unused and in its original packaging.
Return procedure for SMBD7000E6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBD7000E6327HTSA1 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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