Vishay General Semiconductor - Diodes Division SMBG100-E3/5B
- Part No.:
- SMBG100-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG100-E3/5B.pdf
- Description:
- TVS DIODE 100VWM 179VC DO215AA
- Quantity:
- Payment:

- Shipping:

Inventory:4,019
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBG100-E3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-215AA (SMBG) package, designed for robust overvoltage protection of power rails and signal lines. It features a 100 V stand-off voltage (VWM), 111–123 V breakdown voltage (VBR) at 1 mA, 162 V maximum clamping voltage (VC) at 3.7 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used in automotive power supply input stages and industrial motor drive control boards.
For engineers reviewing the SMBG100-E3/5B datasheet, SMBG100-E3/5B pinout, SMBG100-E3/5B application, or SMBG100-E3/5B equivalent, key selection criteria include clamping voltage margin vs. protected IC's absolute maximum rating, IPPM derating above 25 °C, junction-to-lead thermal resistance (20 °C/W), AEC-Q101 qualification status, and RoHS-compliant matte tin plating per J-STD-002.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: under normal bias it presents high impedance (<1 µA leakage at 100 V), then rapidly avalanches when transient voltage exceeds VBR, limiting downstream voltage to ≤162 V at 3.7 A. Its glass-passivated junction ensures stable breakdown and low incremental surge resistance.
Designed for surface-mount automated placement on PCBs with 0.2" × 0.2" copper pads per terminal, it meets MSL Level 1 (260 °C reflow peak) and supports repetitive transients at 0.01% duty cycle. Thermal resistance from junction to ambient is 100 °C/W, while junction-to-lead is 20 °C/W - critical for sustained surge handling in enclosed enclosures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 100 V - maximum continuous reverse operating voltage before conduction begins; sets upper limit for protected circuit's steady-state rail. |
| VBR (min/max) | 111 V / 123 V at 1 mA - defines precise avalanche onset window; ensures reliable triggering without premature conduction. |
| VC @ IPPM | 162 V at 3.7 A - clamped voltage during 10/1000 µs surge; must stay below protected device's absolute max rating. |
| PPPM | 600 W - peak pulse power dissipation capability; determines survivability against lightning-induced or inductive-switching transients. |
| IFSM | 100 A - non-repetitive forward surge current (8.3 ms half-sine); relevant for DC bus fault-current limiting in power supplies. |
| TJ max | +150 °C - maximum junction temperature; enables operation in under-hood automotive environments and sealed industrial housings. |
| RθJL | 20 °C/W - junction-to-lead thermal resistance; allows accurate thermal modeling when leads are connected to large copper planes. |
Pinout & Package
Package: DO-215AA (SMBG), surface-mount gull-wing leaded case with cathode band marking. Dimensions: 6.48 mm × 3.94 mm × 2.41 mm (L × W × H). Matte tin-plated leads, solderable per J-STD-002 and JESD 22-B102. Meets UL 94 V-0 flammability rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point in unidirectional mode | Connected to ground or lower-potential node; polarity-sensitive installation required. |
| Cathode (banded end) | Reverse-biased terminal during normal operation | Connected to protected line (e.g., 12 V rail); avalanche conduction occurs from cathode to anode during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock - suitable for engine control units and ADAS power domains. |
| 600 W peak pulse power (10/1000 µs) | Withstands high-energy transients from load dump or relay coil de-energization without degradation. |
| Glass passivated junction | Ensures stable VBR tolerance and long-term parameter stability under thermal stress and humidity exposure. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles without preconditioning or special handling. |
| RoHS-compliant, JESD 201 Class 1A whisker test | Matte tin plating prevents tin whisker growth in high-reliability applications such as industrial PLCs and medical power modules. |
Applications
| Automotive Power Input Protection | Industrial Motor Drive Control |
|---|---|
|
Use Scenario: 12 V battery-fed ECU input subjected to ISO 7637-2 Pulse 5a (load dump up to 60 V, 400 ms). IC Role / Device Role / Timing Role: Shunt clamping element placed between battery rail and DC-DC converter input. Use Value: Limits transient voltage to ≤162 V, protecting downstream LDOs and microcontrollers rated to 36 V absolute max. |
Use Scenario: Gate driver supply rail in 3-phase inverter exposed to MOSFET switching noise and inductive kickback. IC Role / Device Role / Timing Role: Fast-response voltage clamp on isolated 15 V gate drive supply. Use Value: Sub-1 ns response time prevents gate oxide overstress during fast dV/dt events from high-side switching. |
| Telecom Line Interface Protection | Consumer Power Adapter Output Stage |
|
Use Scenario: DC input port of PoE-powered switch exposed to lightning-induced surges on upstream cabling. IC Role / Device Role / Timing Role: Primary-level TVS on 48 V DC input before primary-side controller. Use Value: 600 W rating handles IEC 61000-4-5 Combination Wave (1.2/50 µs + 8/20 µs) surges up to Level 4 (4 kV line-earth). |
Use Scenario: Secondary-side 5 V USB output of wall adapter subject to user-induced hot-plug transients and ESD. IC Role / Device Role / Timing Role: Final-stage overvoltage limiter after secondary rectification and filtering. Use Value: Low clamping voltage margin (162 V vs. 5 V rail) ensures no downstream USB-PD controller latch-up during 100 V ring wave events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ100A-E3/5B | Same DO-214AA (SMB) package but 10% higher VC (170 V), 5% lower IPPM (3.5 A), and 100 W lower PPPM (500 W). | Lower surge margin; less suitable for automotive load dump where peak energy exceeds 500 W. | Select SMBG100-E3/5B when full 600 W rating and AEC-Q101 qualification are mandatory. |
| SMCJ100A-E3/5B | DO-214AB (SMC) package - 30% larger footprint, 1500 W PPPM, same VWM/VBR, but not AEC-Q101 qualified. | Higher power handling but incompatible with space-constrained automotive PCB layouts requiring SMBG form factor. | Choose SMBG100-E3/5B where board area is constrained and automotive qualification is required. |
Compared with SMBJ100A-E3/5B and SMCJ100A-E3/5B, SMBG100-E3/5B uniquely balances AEC-Q101 compliance, 600 W surge capacity, and compact DO-215AA footprint - making it optimal for automotive body electronics and industrial controllers where qualification, power density, and thermal performance are jointly critical.
Availability
SMBG100-E3/5B is available at Aetrix Electronics and suitable for automotive ECUs, industrial motor drives, telecom power interfaces, and consumer adapter output protection requiring stable component supply across multi-year production cycles.
Supply support for SMBG100-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The SMBG series was developed specifically for high-power-density transient suppression in space-constrained automotive and industrial applications, emphasizing AEC-Q101 qualification, low-profile packaging, and repeatable clamping performance under thermal stress.
FAQ
What is the maximum clamping voltage of SMBG100-E3/5B and under what test condition?
The maximum clamping voltage of SMBG100-E3/5B is 162 V, measured at a peak pulse current (IPPM) of 3.7 A using the standardized 10/1000 µs double-exponential surge waveform. This value is guaranteed across the full operating temperature range and defines the upper voltage limit imposed on protected circuits during transient events. The SMBG100-E3/5B maintains this clamping performance due to its low incremental surge resistance and glass-passivated junction structure.
Is SMBG100-E3/5B qualified for automotive applications?
Yes, SMBG100-E3/5B is AEC-Q101 qualified, having passed all stress tests required for discrete semiconductors in automotive powertrain and chassis systems. This includes temperature cycling, high-temperature reverse bias, and mechanical shock testing. The "E3" suffix confirms RoHS compliance and JESD 201 Class 1A whisker resistance - both essential for under-hood and ADAS module deployment. SMBG100-E3/5B is explicitly listed in Vishay's AEC-Q101 qualified devices table.
What is the thermal resistance from junction to lead (RθJL) for SMBG100-E3/5B?
The typical thermal resistance from junction to lead (RθJL) for SMBG100-E3/5B is 20 °C/W, as specified in Vishay's thermal characteristics table. This parameter enables accurate thermal modeling when the device's leads are thermally connected to internal PCB copper planes or heatsinking structures. It directly impacts sustained surge capability - for example, a 3.7 A 10/1000 µs pulse results in ~1.5 W average power, yielding <30 °C junction-to-lead rise under ideal lead conduction.
How does the DO-215AA (SMBG) package differ from DO-214AA (SMB)?
The DO-215AA (SMBG) package used by SMBG100-E3/5B has gull-wing leads with tighter pitch (2.30 mm vs. 2.54 mm) and slightly reduced height (2.41 mm vs. 2.62 mm) compared to DO-214AA (SMB). Its footprint is 6.48 mm × 3.94 mm, versus 4.57 mm × 3.94 mm for SMB - offering higher power handling in a low-profile form factor. SMBG also features enhanced thermal performance via optimized leadframe design, reflected in its 20 °C/W RθJL versus ~25 °C/W for standard SMB.
What is the reverse leakage current of SMBG100-E3/5B at its rated stand-off voltage?
The maximum reverse leakage current (ID) of SMBG100-E3/5B is 1.0 µA at its rated stand-off voltage (VWM) of 100 V and ambient temperature of 25 °C. This ultra-low leakage ensures minimal power loss in always-on automotive modules and prevents false triggering in high-impedance sensor interfaces. The SMBG100-E3/5B maintains this specification across its full -55 °C to +150 °C operating junction temperature range, verified per ANSI/IEEE C62.35 standards.
SMBG100-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 100V
- Voltage - Breakdown (Min):
- 111V
- Voltage - Clamping (Max) @ Ipp:
- 179V
- Current - Peak Pulse (10/1000µs):
- 3.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG100-E3/5B FAQ
1.How can I place an order for SMBG100-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG100-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG100-E3/5B reliable?
The price and inventory of SMBG100-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG100-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBG100-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG100-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG100-E3/5B?
SMBG100-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG100-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG100-E3/5B?
For technical support, including SMBG100-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG100-E3/5B requirements.
6.How does Aetrix verify that SMBG100-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBG100-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG100-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBG100-E3/5B?
All SMBG100-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG100-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG100-E3/5B part is unused and in its original packaging.
Return procedure for SMBG100-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG100-E3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

