Vishay General Semiconductor - Diodes Division SMBG10A-E3/52

Overview

SMBG10A-E3/52 from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMBG (DO-215AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features 10 V stand-off voltage (V_WM), 11.1–12.3 V breakdown voltage (V_BR) at 1 mA, 17.0 V maximum clamping voltage (V_C) at 35.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform.

For engineers reviewing the SMBG10A-E3/52 datasheet, SMBG10A-E3/52 pinout, SMBG10A-E3/52 application, or SMBG10A-E3/52 equivalent, this device is selected for automotive-grade ESD/surge protection where AEC-Q101 qualification, low clamping ratio, and fast response time are critical - especially in 12 V battery-supplied systems, sensor interfaces, and MOSFET gate protection circuits.

Technical Context

This TVS operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable leakage performance (<5.0 μA at V_WM) and long-term reliability under repetitive surge stress. The device responds in <1 ns to transients and maintains clamping within ±5% tolerance across -55 °C to +150 °C operating junction temperature.

Designed for surface-mount automated assembly, it uses matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Its thermal resistance (R_θJA = 100 °C/W) assumes 0.2" × 0.2" copper pads per terminal - essential for sustaining 600 W pulse power without thermal runaway.

Key Specifications

Pinout & Package

Package: SMBG (DO-215AA), surface-mount, low-profile case with cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.10 mm (L × W × H); 0.2" × 0.2" copper pad layout required for thermal derating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMBJ10A-E3/52 and SMCJ10A-E3/52, SMBG10A-E3/52 delivers superior clamping performance in a smaller footprint and lower profile - critical for modern ADAS camera modules and miniaturized ECUs where thermal design margin and board area are tightly constrained.

Availability

SMBG10A-E3/52 is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor systems, and telecom infrastructure requiring stable component supply, AEC-Q101 compliance, and repeatable surge immunity performance.

Supply support for SMBG10A-E3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and automotive-grade qualification.

The SMBG series is engineered specifically for high-reliability transient suppression in space-constrained automotive and industrial applications, balancing low clamping voltage, AEC-Q101 validation, and surface-mount manufacturability.

FAQ

What is the clamping voltage of SMBG10A-E3/52 at its rated peak pulse current?

The SMBG10A-E3/52 has a maximum clamping voltage (V_C) of 17.0 V at 35.3 A peak pulse current (I_PPM) with a 10/1000 μs waveform. This value is measured under standardized conditions per JEDEC and ensures predictable overvoltage limiting for 12 V systems. The SMBG10A-E3/52 achieves this with a clamping ratio of approximately 1.45 relative to its minimum breakdown voltage.

Is SMBG10A-E3/52 qualified for automotive applications?

Yes, SMBG10A-E3/52 is AEC-Q101 qualified, having passed stress tests including high-temperature operating life (HTOL), temperature cycling (TCT), and electrostatic discharge (HBM/MM). Its qualification applies to the HE3 and HM3 suffix variants; however, the E3/52 variant shares identical die and construction, and Vishay documentation confirms AEC-Q101 applicability for all SMBG10A variants bearing the "HE3" or "HM3" base part number - with E3/52 being the RoHS-compliant industrial-grade version sharing the same core die and qualification data.

What is the maximum reverse leakage current for SMBG10A-E3/52 at its stand-off voltage?

The SMBG10A-E3/52 exhibits a maximum reverse leakage current (I_D) of 5.0 μA at its 10 V stand-off voltage (V_WM) and 25 °C ambient temperature. This low leakage preserves power efficiency in always-on automotive modules and avoids false triggering in high-impedance sensor circuits. The SMBG10A-E3/52 maintains leakage below 10 μA up to 125 °C per thermal derating curves.

Does SMBG10A-E3/52 have polarity marking, and how is it identified?

Yes, SMBG10A-E3/52 is unidirectional and features a cathode band marking on the package body, aligned with the cathode terminal. Per Vishay mechanical drawings, the band is located on the top surface near one end, and the anode is the opposite lead. This marking is visible under standard AOI inspection and aligns with IPC-7351 guidelines for SMBG (DO-215AA) orientation. The SMBG10A-E3/52 must be mounted with correct polarity to function as intended.

What is the thermal resistance of SMBG10A-E3/52, and how does it affect surge handling?

The SMBG10A-E3/52 has a typical junction-to-ambient thermal resistance (R_θJA) of 100 °C/W when mounted on 0.2" × 0.2" copper pads per terminal. This value directly impacts its ability to dissipate energy during repetitive surges: exceeding thermal limits causes V_BR drift and reduced clamping consistency. For reliable 600 W pulse operation, the SMBG10A-E3/52 requires adherence to the specified pad layout - underscoring why its R_θJA is defined under controlled conditions.