Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBG12-E3/5B

Part No.:
SMBG12-E3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-215AA, SMB Gull Wing
Datasheet:
AetrixSMBG12-E3/5B.pdf
Description:
TVS DIODE 12VWM 22VC DO215AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,563

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBG12-E3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-215AA (SMBG) package, designed for primary overvoltage protection of DC power rails and signal lines. It features 12 V stand-off voltage (VWM), 13.3–14.7 V breakdown voltage (VBR) at 1 mA, 19.9 V clamping voltage (VC) at 30.2 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used in automotive body control modules to safeguard 12 V supply inputs against load dump and inductive switching transients.

For engineers reviewing the SMBG12-E3/5B datasheet, SMBG12-E3/5B pinout, SMBG12-E3/5B application, or SMBG12-E3/5B equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, RoHS-compliant packaging details, thermal resistance values, and validated alternative parts for automotive-grade circuit protection design.

Technical Context

The SMBG12-E3/5B operates as a unidirectional avalanche diode, clamping transient overvoltages above its breakdown threshold while maintaining low leakage (<5.0 µA at 12 V) under normal operation. Its glass-passivated junction ensures stable VBR tolerance (±5%) and robust surge handling up to 100 A IFSM (8.3 ms half-sine).

Thermal performance is defined by RθJA = 100 °C/W (on 5.0 mm × 5.0 mm copper pads) and RθJL = 20 °C/W, enabling reliable operation up to TJ = +150 °C. The device meets MSL Level 1 per J-STD-020 and passes JESD201 Class 1A whisker testing.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 12 V - Maximum continuous reverse operating voltage before clamping begins; sets protection threshold for 12 V nominal systems.
VBR (min/max) 13.3 V / 14.7 V at 1 mA - Confirmed breakdown range ensures consistent turn-on across production lots and temperature.
VC @ IPPM 19.9 V at 30.2 A - Clamping voltage during 10/1000 µs transient defines maximum stress on downstream ICs.
PPPM 600 W - Peak pulse power rating determines survivability against standardized lightning/surge waveforms.
IFSM 100 A - Surge current rating for 8.3 ms half-sine pulses supports automotive load-dump immunity per ISO 7637-2.
TJ max +150 °C - Maximum junction temperature enables use in under-hood automotive environments.
Leakage @ VWM ≤5.0 µA - Low reverse leakage minimizes standby power loss in always-on circuits.

Pinout & Package

DO-215AA (SMBG) surface-mount package with gull-wing leads; cathode indicated by band on one end; matte tin-plated terminals compliant with J-STD-002 and JESD22-B102 solderability standards.

Pin/Terminal Circuit Role Design Meaning
Anode Low-side connection point Connected to ground or low-impedance return path; forms clamping path during positive transients.
Cathode High-side connection point Connected to protected line (e.g., 12 V rail); polarity marking ensures correct orientation during placement.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications including engine control units and body electronics with zero defect requirements.
600 W peak pulse power Withstands repetitive 10/1000 µs surges at 0.01% duty cycle without degradation - suitable for CAN/LIN bus protection.
Glass-passivated junction Ensures stable VBR and low leakage over lifetime; prevents moisture-induced parameter drift in humid environments.
MSL Level 1 (260 °C peak) Compatible with standard lead-free reflow profiles without preconditioning; eliminates moisture-related popcorning risk.
RoHS-compliant (E3 suffix) Meets EU Directive 2011/65/EU; no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE in construction.

Applications

Automotive Body Control Module (BCM) Industrial PLC Digital Input Protection

Use Scenario: Protects 12 V power input of BCM against load dump (ISO 7637-2 Pulse 5a) and relay coil flyback.

IC Role / Device Role / Timing Role: Primary clamping element placed directly at connector entry point to limit voltage seen by PMIC and microcontroller.

Use Value: Limits transient voltage to ≤19.9 V, preventing latch-up or permanent damage to 3.3 V/5 V logic supplies downstream.

Use Scenario: Shields 24 V digital input channels of programmable logic controllers from field-wiring induced surges.

IC Role / Device Role / Timing Role: Standoff-rated TVS placed between terminal block and optocoupler input to absorb fast-rising transients.

Use Value: Withstands >30 A peak currents while maintaining <20 V clamping, preserving isolation barrier integrity and signal fidelity.

Automotive Infotainment Power Rail Telecom Interface Protection

Use Scenario: Guards USB/VDDIO rails in head unit power management ICs against ESD and battery reversal events.

IC Role / Device Role / Timing Role: Secondary protection stage after fuse and upstream filter, responding within <1 ns to sub-nanosecond transients.

Use Value: Sub-20 V clamping prevents overvoltage shutdown of USB PHY and audio codec ICs during hot-swap or cable disconnect events.

Use Scenario: Protects RS-485 transceiver VCC pins in base station backhaul equipment exposed to lightning-induced surges.

IC Role / Device Role / Timing Role: Unidirectional clamp on 3.3 V or 5 V supply line feeding isolated data interface ICs.

Use Value: 600 W rating ensures survival of multiple 10/1000 µs surges per IEC 61000-4-5 Level 4 without parametric shift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ12A-E3/52 Same VWM (12 V), identical DO-214AA (SMB) package but slightly higher VC (23.2 V vs. 19.9 V); lower IPPM (24.6 A). Lower peak power (600 W same), but reduced surge margin due to higher clamping; less suitable for high-energy load dump. Select SMBG12-E3/5B when tighter clamping and AEC-Q101 qualification are required; SMBJ12A-E3/52 may be used where cost is prioritized over automotive compliance.
SMCJ12A-E3/57T Same VWM, but larger DO-214AB (SMC) package; higher PPPM (1500 W), VC = 19.9 V at 75.8 A. Higher energy handling enables use in alternator output protection; requires larger PCB footprint and different pad layout. Choose SMBG12-E3/5B for space-constrained automotive modules; SMCJ12A-E3/57T only where >1 kW surge capability is mandated and board area permits.

Compared with SMBJ12A-E3/52 and SMCJ12A-E3/57T, the SMBG12-E3/5B uniquely combines AEC-Q101 qualification, DO-215AA compactness, and 19.9 V clamping - making it optimal for automotive front-end protection where footprint, reliability, and precise voltage limiting are jointly critical.

Availability

SMBG12-E3/5B is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, and telecom interface protection requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SMBG12-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.

The SMBG series was engineered specifically for AEC-Q101-compliant transient suppression in space-constrained automotive ECUs, balancing low-profile packaging, tight VBR tolerance, and robust surge endurance.

FAQ

What is the clamping voltage of SMBG12-E3/5B and how is it measured?

The SMBG12-E3/5B has a maximum clamping voltage (VC) of 19.9 V at 30.2 A peak pulse current, tested using the standardized 10/1000 µs double-exponential waveform per IEC 61000-4-5. This value represents the upper voltage limit imposed on protected circuitry during worst-case transient events and is guaranteed across the full operating temperature range of −55 °C to +150 °C.

Is SMBG12-E3/5B qualified for automotive applications?

Yes, SMBG12-E3/5B is AEC-Q101 qualified, as confirmed by Vishay's official documentation (Document Number 88456). This qualification validates its reliability for use in automotive electronic control units, including body control modules and infotainment systems, under extended temperature cycling, humidity bias, and mechanical shock conditions.

What does the "E3/5B" suffix indicate in SMBG12-E3/5B?

The "E3" denotes RoHS-compliant, commercial-grade construction with matte tin-plated leads meeting JESD201 Class 1A whisker resistance. The "5B" specifies packaging in 13-inch diameter plastic tape and reel, containing 3200 units - optimized for high-volume automated SMT assembly lines.

How does SMBG12-E3/5B differ from bi-directional variants like SMBG12CA?

SMBG12-E3/5B is unidirectional and includes a cathode band for polarity identification; it conducts only during reverse-biased overvoltage events. In contrast, SMBG12CA is bi-directional with no polarity marking and clamps transients of either polarity - making SMBG12-E3/5B appropriate for DC rail protection, while SMBG12CA suits AC-coupled or differential signal lines.

What is the thermal resistance of SMBG12-E3/5B and why does it matter?

SMBG12-E3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 5.0 mm × 5.0 mm copper pads per terminal. This value directly impacts maximum allowable power dissipation and safe operating area - critical for ensuring long-term reliability in high-temperature automotive under-hood environments.

SMBG12-E3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-215AA, SMB Gull Wing
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
12V
Voltage - Breakdown (Min):
13.3V
Voltage - Clamping (Max) @ Ipp:
22V
Current - Peak Pulse (10/1000µs):
27.3A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBG)

SMBG12-E3/5B FAQ

1.How can I place an order for SMBG12-E3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBG12-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBG12-E3/5B reliable?

The price and inventory of SMBG12-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG12-E3/5B is usually 5 days.

3.What payment methods are accepted for SMBG12-E3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG12-E3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBG12-E3/5B?

SMBG12-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBG12-E3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBG12-E3/5B?

For technical support, including SMBG12-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG12-E3/5B requirements.

6.How does Aetrix verify that SMBG12-E3/5B is sourced from the original manufacturer or authorized distributors?

All SMBG12-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG12-E3/5B meets industry standards.

7.What is the process for return or replacement of SMBG12-E3/5B?

All SMBG12-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG12-E3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBG12-E3/5B part is unused and in its original packaging.

Return procedure for SMBG12-E3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBG12-E3/5B Tags

  • SMBG12-E3/5B
  • SMBG12-E3/5B PDF
  • SMBG12-E3/5B Datasheet
  • SMBG12-E3/5B Specifications
  • SMBG12-E3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBG12-E3/5B
  • Buy SMBG12-E3/5B
  • SMBG12-E3/5B Price
  • SMBG12-E3/5B Distributor
  • SMBG12-E3/5B Supplier
  • SMBG12-E3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER