Vishay General Semiconductor - Diodes Division SMBG13CHE3/5B
- Part No.:
- SMBG13CHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG13CHE3/5B.pdf
- Description:
- TVS DIODE 13VWM 23.8VC DO215AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBG13CHE3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-215AA (SMBG) package, designed for robust overvoltage protection of DC power rails and signal lines. It features 13 V standoff voltage (VWM), 14.4–15.9 V breakdown voltage (VBR at 1 mA), 21.5 V clamping voltage (VC) at 27.9 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive engine control units to safeguard microcontroller I/O against load dump transients.
For engineers reviewing the SMBG13CHE3/5B datasheet, SMBG13CHE3/5B pinout, SMBG13CHE3/5B application, or SMBG13CHE3/5B equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance data, RoHS-compliant material categorization, and precise mechanical dimensions per DO-215AA outline - all critical for ESD/surge co-design, PCB layout validation, and automotive-grade BOM sourcing.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: under normal bias it presents high impedance (<1 µA leakage at 13 V), then rapidly avalanches below 16 V to clamp transient energy into ground. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low dynamic impedance (≈0.7 Ω derived from ΔVC/ΔIPPM), enabling consistent clamping across temperature (−55 °C to +150 °C).
Designed for automated SMT placement, the device meets J-STD-020 MSL Level 1 (peak reflow 260 °C), uses matte tin-plated leads compliant with JESD 22-B102, and carries HE3 suffix confirming AEC-Q101 qualification - making it suitable for under-hood automotive modules where reliability under thermal cycling and mechanical shock is mandatory.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 13 V - maximum continuous reverse operating voltage before conduction begins; defines safe DC rail margin for 12 V automotive systems. |
| VBR (min/max) | 14.4 V / 15.9 V at 1 mA - tight 5% tolerance ensures predictable turn-on threshold across production lots and temperature. |
| VC @ IPPM | 21.5 V at 27.9 A - clamping voltage during 600 W transient; limits stress on downstream ICs to <22 V during ISO 7637-2 Pulse 5a events. |
| PPPM | 600 W - peak pulse power handling with 10/1000 µs waveform; supports repetitive surge duty cycle up to 0.01%. |
| RθJA | 100 °C/W - junction-to-ambient thermal resistance on 5 mm × 5 mm copper pads; enables thermal derating above 25 °C ambient. |
| IFSM | 100 A - non-repetitive forward surge rating (8.3 ms half-sine); validates robustness against battery reverse-connection faults. |
| Junction Temp | −55 °C to +150 °C - full operational range compatible with engine compartment environments. |
Pinout & Package
DO-215AA (SMBG) surface-mount package: gull-wing leads, 0.235–0.255 inch body length, 0.130–0.155 inch width, 0.075–0.095 inch height; cathode band marked on one end; mounted on 5.0 mm × 5.0 mm copper pads per terminal per datasheet Fig. 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference node | Connected to system ground or return path; forms shunt path for transient current when cathode is biased above VBR. |
| Cathode | Protected line input | Connected to line under protection (e.g., 12 V supply rail); avalanche conduction occurs from cathode to anode during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including powertrain and chassis modules per stress test requirements. |
| Glass passivated junction | Ensures long-term VBR stability and low leakage drift over 15-year service life in humid/harsh environments. |
| MSL Level 1 rating | Enables single-pass reflow without popcorn cracking; no pre-bake required prior to assembly. |
| 600 W peak pulse power | Withstands ISO 7637-2 Pulse 1 (inductive switch-off) and Pulse 5a (load dump) without degradation. |
| RoHS-compliant HE3 suffix | Meets JESD 201 Class 2 whisker resistance; eliminates tin whisker risk in high-reliability automotive PCBs. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V supply inputs of engine control units (ECUs) against load dump transients up to 35 V for 400 ms. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between battery rail and local regulator input. Use Value: Clamps transients to ≤21.5 V, preventing damage to 28 V-rated LDOs and ensuring uninterrupted MCU operation. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loop) of pressure sensors in factory automation PLCs. IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional TVS (cathode tied to signal, anode to ground) suppressing ESD and switching noise. Use Value: Limits induced surges to <22 V while maintaining <1 µA leakage at 13 V, preserving sensor accuracy and loop integrity. |
| Telecom DC Power Feeds | Consumer USB Power Delivery |
|
Use Scenario: Overvoltage protection on −48 V DC telecom rectifier outputs feeding base station RF amplifiers. IC Role / Device Role / Timing Role: Reverse-connected unidirectional TVS (anode to −48 V rail, cathode to ground) clamping positive transients. Use Value: Withstands 600 W pulses without parametric shift, ensuring uptime during lightning-induced surges on outdoor cabinet feeds. |
Use Scenario: Secondary-level surge suppression on 5 V USB Type-C VBUS lines after primary protection. IC Role / Device Role / Timing Role: Low-capacitance (≈100 pF at 0 V) unidirectional TVS placed near connector to limit fast-rising ESD. Use Value: Responds in <1 ns to ±8 kV contact discharge (IEC 61000-4-2), clamping to 21.5 V before USB controller ICs experience latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ13AHE3/5B | Same VWM (13 V), identical DO-214AA (SMB) package but 5% larger footprint; RθJA = 85 °C/W vs. 100 °C/W. | Higher power density (600 W same rating) but requires larger pad layout; not DO-215AA footprint-compatible. | Select SMBJ13AHE3/5B only if board space allows larger SMB package and lower thermal resistance is prioritized. |
| 1.5KE13AHE3/54 | Through-hole TO-204AA (DO-41); 13 V VWM, 21.5 V VC, but 1500 W rating and slower response due to higher junction capacitance. | Not SMT-compatible; used in legacy industrial power supplies where manual assembly and higher surge margin are acceptable. | Choose 1.5KE13AHE3/54 only for through-hole designs requiring >600 W headroom and where rework flexibility outweighs automated assembly needs. |
Compared with SMBG13CHE3/5B, SMBJ13AHE3/5B offers better thermal performance but demands PCB layout revision, while 1.5KE13AHE3/54 provides higher surge rating at the cost of SMT incompatibility and slower clamping - making SMBG13CHE3/5B the optimal choice for new AEC-Q101-compliant SMT automotive designs with strict footprint constraints.
Availability
SMBG13CHE3/5B is available at Aetrix Electronics and suitable for automotive ECU power protection, industrial sensor interface hardening, and telecom DC feed surge suppression requiring stable component supply, AEC-Q101 traceability, and RoHS-compliant manufacturing.
Supply support for SMBG13CHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade qualification.
The SMBG series was engineered specifically for high-reliability surface-mount transient suppression in space-constrained automotive and industrial environments, balancing low profile, AEC-Q101 compliance, and repeatable clamping performance.
FAQ
What is the clamping voltage of SMBG13CHE3/5B at its rated peak pulse current?
The SMBG13CHE3/5B has a maximum clamping voltage (VC) of 21.5 V at 27.9 A peak pulse current (IPPM) under 10/1000 µs waveform conditions. This value is measured per ANSI/IEEE C62.35 and guarantees that downstream circuitry sees no more than 21.5 V during a 600 W transient event. The SMBG13CHE3/5B maintains this clamping performance across its full operating temperature range of −55 °C to +150 °C.
Is SMBG13CHE3/5B suitable for automotive applications?
Yes, SMBG13CHE3/5B is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood engine control units and body electronics. Its HE3 suffix confirms compliance with AEC-Q101 stress tests, and its DO-215AA package meets MSL Level 1 for lead-free reflow. The SMBG13CHE3/5B is designed to withstand ISO 7637-2 load dump and pulse 1 transients common in 12 V vehicle electrical systems.
What does the "HE3" suffix mean in SMBG13CHE3/5B?
The "HE3" suffix in SMBG13CHE3/5B indicates RoHS-compliant construction with AEC-Q101 qualification and JESD 201 Class 2 whisker resistance. Unlike standard "E3" parts, HE3 devices undergo additional automotive-grade reliability testing and use matte tin plating validated for long-term stability in thermal cycling environments. The SMBG13CHE3/5B's HE3 marking is documented in Vishay's ordering information table and thermal characteristics section.
How does SMBG13CHE3/5B differ from SMBG13A-E3/5B?
SMBG13CHE3/5B is AEC-Q101 qualified and JESD 201 Class 2 whisker-tested, whereas SMBG13A-E3/5B is commercial-grade only (E3 suffix). Both share identical electrical specs (VWM = 13 V, VC = 21.5 V) and DO-215AA packaging, but SMBG13CHE3/5B is certified for automotive production use with full traceability and extended reliability validation. For automotive BOMs, SMBG13CHE3/5B is the required variant.
What is the thermal resistance of SMBG13CHE3/5B, and how does it affect layout?
The SMBG13CHE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 5.0 mm × 5.0 mm copper pads per terminal. This value requires PCB designers to allocate sufficient copper area for heat dissipation during repetitive surge events. Reducing pad size increases RθJA, accelerating thermal derating - for example, at 100 °C ambient, the SMBG13CHE3/5B's surge capability drops by ~50% versus 25 °C operation.
SMBG13CHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 14.4V
- Voltage - Clamping (Max) @ Ipp:
- 23.8V
- Current - Peak Pulse (10/1000µs):
- 25.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG13CHE3/5B FAQ
1.How can I place an order for SMBG13CHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG13CHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG13CHE3/5B reliable?
The price and inventory of SMBG13CHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG13CHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBG13CHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG13CHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG13CHE3/5B?
SMBG13CHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG13CHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG13CHE3/5B?
For technical support, including SMBG13CHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG13CHE3/5B requirements.
6.How does Aetrix verify that SMBG13CHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBG13CHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG13CHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBG13CHE3/5B?
All SMBG13CHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG13CHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG13CHE3/5B part is unused and in its original packaging.
Return procedure for SMBG13CHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG13CHE3/5B Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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