Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBG18AHE3/52

Part No.:
SMBG18AHE3/52
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-215AA, SMB Gull Wing
Datasheet:
AetrixSMBG18AHE3/52.pdf
Description:
TVS DIODE 18VWM 29.2VC DO215AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,813

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBG18AHE3/52 from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMBG (DO-215AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 18 V stand-off voltage (VWM), 20.0–22.1 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 µs), <1.0 µA reverse leakage at VWM, and clamps to ≤29.2 V at 20.5 A peak pulse current - deployed in automotive power line and sensor interface protection.

For engineers reviewing the SMBG18AHE3/52 datasheet, SMBG18AHE3/52 pinout, SMBG18AHE3/52 application, or SMBG18AHE3/52 equivalent, key selection criteria include its AEC-Q101 qualification, unidirectional polarity with cathode band marking, 150 °C max junction temperature, low thermal resistance (RθJL = 20 °C/W), and compliance with UL 497B for telecom and industrial surge protection.

Technical Context

This TVS diode operates as a clamping device in parallel with protected circuitry, responding to fast transients (sub-nanosecond response time) by avalanche breakdown when reverse voltage exceeds VBR. Its glass-passivated junction ensures stable leakage and long-term reliability under repetitive surge stress.

Rated for 600 W peak pulse power (10/1000 µs waveform, 0.01% duty cycle), it handles up to 100 A non-repetitive forward surge (8.3 ms half-sine) and maintains clamping performance across -55 °C to +150 °C operating range - validated per JESD22-B102 and J-STD-020 MSL Level 1.

Key Specifications

ParameterValue and Actual Design Meaning
VWM18 V - maximum continuous reverse operating voltage before clamping begins
VBR (min/max)20.0 V / 22.1 V at 1 mA - guaranteed avalanche initiation window for predictable turn-on
VC @ IPPM≤29.2 V at 20.5 A - clamped voltage during 600 W transient, limiting stress on downstream ICs
ID @ VWM<1.0 µA - negligible standby power loss and signal integrity impact in high-impedance circuits
PPPM600 W - surge energy handling capability compliant with IEC 61000-4-5 Level 4 (industrial)
TJ max+150 °C - enables use in under-hood automotive environments without derating
PackageSMBG (DO-215AA) - surface-mount footprint compatible with automated assembly and 0.2" × 0.2" copper pad layout

Pinout & Package

SMBG18AHE3/52 uses the SMBG (DO-215AA) package: a low-profile, molded surface-mount case with matte tin-plated leads solderable per J-STD-002. Polarity is marked by a cathode band; terminal 1 is cathode, terminal 2 is anode.

Pin/TerminalCircuit RoleDesign Meaning
Cathode (banded end)Transient current sink nodeConnects to protected line; conducts avalanche current to ground during overvoltage events
AnodeReference/ground return pathTypically tied to system ground plane; completes clamping loop with minimal inductance

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive applications including engine control units and ADAS sensor interfaces
600 W peak pulse power (10/1000 µs)Withstands repeated ISO 7637-2 Pulse 1/2a/5a surges without degradation
Low incremental surge resistanceEnsures tight VC tolerance and consistent clamping across production lots
MSL Level 1 (260 °C peak reflow)Compatible with standard lead-free SMT reflow profiles without moisture sensitivity concerns
Glass passivated junctionProvides stable VBR and low leakage over temperature and lifetime

Applications

Automotive Power Line ProtectionIndustrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs against load dump and alternator transients.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp spikes above 29.2 V.

Use Value: Prevents latch-up or permanent damage to microcontrollers and CAN transceivers during ISO 16750-2 tests.

Use Scenario: Shielding analog outputs of pressure/temperature sensors from ESD and switching noise.

IC Role / Device Role / Timing Role: Low-capacitance TVS on 4–20 mA or 0–5 V signal lines to absorb ±8 kV contact ESD per IEC 61000-4-2.

Use Value: Maintains signal fidelity with <1.0 µA leakage and avoids false triggering in precision measurement circuits.

Telecom Line Interface ProtectionConsumer Power Adapter Input Protection

Use Scenario: Safeguarding Ethernet PHYs and DSL line drivers from lightning-induced surges.

IC Role / Device Role / Timing Role: Primary-level TVS on RJ-45 transformer center taps or DC bias lines.

Use Value: UL 497B recognition confirms suitability for telecom infrastructure with certified surge withstand.

Use Scenario: Input-stage protection for AC-DC adapters against mains-borne transients.

IC Role / Device Role / Timing Role: Secondary-side TVS on +5 V/+12 V rails downstream of rectification.

Use Value: Enables compact design with SMBG footprint while meeting IEC 61000-4-5 Level 3 immunity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ18A-E3/52Same VWM/VBR/PPPM, but SMB (DO-214AA) package - 1.58 mm height vs. SMBG's 1.14 mmLess suitable for ultra-low-profile designs; higher RθJA (110 °C/W vs. 100 °C/W)Select SMBG18AHE3/52 when board height is constrained or AEC-Q101 qualification is mandatory.
1.5SMC18ASame electrical specs, but larger SMC (DO-214AB) package - 2.62 mm height, higher IFSM (200 A)Better for high-energy surge zones (e.g., front-end power entry); not AEC-Q101 qualifiedChoose SMBG18AHE3/52 for space-constrained automotive modules where qualification and profile are critical.

Compared with SMBJ18A-E3/52 and 1.5SMC18A, SMBG18AHE3/52 delivers identical clamping performance in a lower-profile, automotive-qualified package - enabling tighter PCB stacking and certified deployment in safety-critical vehicle subsystems without layout redesign.

Availability

SMBG18AHE3/52 is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor systems, and telecom infrastructure requiring stable component supply, AEC-Q101 compliance, and repeatable surge protection performance.

Supply support for SMBG18AHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific validation.

The SMBG series was engineered for high-reliability surface-mount transient suppression in space-constrained, thermally demanding environments - particularly targeting automotive, industrial, and telecom applications requiring AEC-Q101 or UL recognition.

FAQ

What is the clamping voltage of SMBG18AHE3/52 and how is it measured?

The SMBG18AHE3/52 has a maximum clamping voltage (VC) of 29.2 V at 20.5 A peak pulse current (IPPM), tested with a 10/1000 µs waveform per IEC 61000-4-5. This value represents the upper limit of voltage seen by protected circuitry during a standardized surge event, ensuring downstream components remain within safe operating limits. The SMBG18AHE3/52 achieves this via controlled avalanche breakdown in its glass-passivated silicon junction.

Is SMBG18AHE3/52 suitable for automotive applications?

Yes, SMBG18AHE3/52 is AEC-Q101 qualified and rated for operation from -55 °C to +150 °C, making it suitable for under-hood and body-control module applications. Its 600 W peak pulse power rating and low clamping voltage support compliance with ISO 7637-2 and ISO 16750-2 transient immunity standards. The SMBG18AHE3/52 also meets JESD22-B102 whisker testing and J-STD-020 MSL Level 1 reflow requirements.

What does the "HE3" suffix indicate in SMBG18AHE3/52?

The "HE3" suffix in SMBG18AHE3/52 denotes RoHS-compliant, AEC-Q101-qualified construction with matte tin-plated leads. Per Vishay's ordering nomenclature, "H" indicates AEC-Q101 qualification, "E3" specifies RoHS-compliant industrial-grade molding compound, and "/52" refers to 750-unit 7-inch tape-and-reel packaging. This distinguishes it from non-automotive variants like SMBG18A-E3/52.

How does SMBG18AHE3/52 differ from bidirectional TVS diodes like SMBG18CA?

SMBG18AHE3/52 is unidirectional and features a cathode band for polarity identification, while SMBG18CA is bidirectional with no polarity marking and symmetrical breakdown in both directions. The SMBG18AHE3/52 offers lower leakage (<1.0 µA at 18 V) and is optimized for DC power line protection; SMBG18CA suits AC signal lines or differential buses where polarity reversal occurs. Their VBR ranges overlap but are tested under different conditions per datasheet tables.

What is the thermal resistance profile of SMBG18AHE3/52 and why does it matter?

SMBG18AHE3/52 has a typical junction-to-lead thermal resistance (RθJL) of 20 °C/W and junction-to-ambient (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" copper pads. This low RθJL enables efficient heat transfer to the PCB during surge events, preventing thermal runaway and ensuring reliable 600 W pulse handling. For high-repetition-rate transients, minimizing RθJA through proper pad layout directly extends device lifetime - a key design consideration for the SMBG18AHE3/52 in automotive ECUs.

SMBG18AHE3/52 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-215AA, SMB Gull Wing
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
18V
Voltage - Breakdown (Min):
20V
Voltage - Clamping (Max) @ Ipp:
29.2V
Current - Peak Pulse (10/1000µs):
20.5A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBG)

SMBG18AHE3/52 FAQ

1.How can I place an order for SMBG18AHE3/52 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBG18AHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBG18AHE3/52 reliable?

The price and inventory of SMBG18AHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG18AHE3/52 is usually 5 days.

3.What payment methods are accepted for SMBG18AHE3/52?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG18AHE3/52 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBG18AHE3/52?

SMBG18AHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBG18AHE3/52 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBG18AHE3/52?

For technical support, including SMBG18AHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG18AHE3/52 requirements.

6.How does Aetrix verify that SMBG18AHE3/52 is sourced from the original manufacturer or authorized distributors?

All SMBG18AHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG18AHE3/52 meets industry standards.

7.What is the process for return or replacement of SMBG18AHE3/52?

All SMBG18AHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBG18AHE3/52, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBG18AHE3/52 part is unused and in its original packaging.

Return procedure for SMBG18AHE3/52:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBG18AHE3/52 Tags

  • SMBG18AHE3/52
  • SMBG18AHE3/52 PDF
  • SMBG18AHE3/52 Datasheet
  • SMBG18AHE3/52 Specifications
  • SMBG18AHE3/52 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBG18AHE3/52
  • Buy SMBG18AHE3/52
  • SMBG18AHE3/52 Price
  • SMBG18AHE3/52 Distributor
  • SMBG18AHE3/52 Supplier
  • SMBG18AHE3/52 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER