Vishay General Semiconductor - Diodes Division SMBG18CAHE3/5B
- Part No.:
- SMBG18CAHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG18CAHE3/5B.pdf
- Description:
- TVS DIODE 18VWM 29.2VC DO215AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBG18CAHE3/5B from Vishay General Semiconductor is a bidirectional transient voltage suppressor (TVS) diode in SMBG (DO-215AA) package, designed for clamping voltage transients on signal or power lines. It features 18 V standoff voltage (VWM), 20.0–22.1 V breakdown voltage (VBR), 600 W peak pulse power (10/1000 μs), <1.0 μA reverse leakage at VWM, and 27.6 V maximum clamping voltage (VC) at rated surge current - deployed in automotive sensor interfaces and industrial I/O protection.
For engineers reviewing the SMBG18CAHE3/5B datasheet, SMBG18CAHE3/5B pinout, SMBG18CAHE3/5B application, or SMBG18CAHE3/5B equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification, 150 °C junction temperature rating, low incremental surge resistance, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
The SMBG18CAHE3/5B operates as a silicon avalanche diode with symmetrical bidirectional conduction, enabling suppression of both positive and negative transients without polarity sensitivity. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive surge stress.
Designed for 10/1000 μs waveform compliance, it delivers 27.6 V clamping at 21.7 A peak pulse current (IPPM) while maintaining ≤1.0 μA leakage at 18 V standoff. Thermal resistance is 100 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead), supporting operation from –55 °C to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 18 V - Maximum continuous reverse operating voltage before clamping initiates; defines safe working range for protected circuitry. |
| VBR min/max | 20.0 V / 22.1 V at 1.0 mA test current - Ensures predictable, tight breakdown threshold for reliable overvoltage triggering. |
| VC @ IPPM | 27.6 V at 21.7 A - Clamped voltage seen by downstream ICs during 600 W transient; limits stress on sensitive components. |
| IPPM | 21.7 A (10/1000 μs) - Peak surge current handling capacity; validated with 0.01% duty cycle repetitive testing. |
| TJ max | +150 °C - Enables use in under-hood automotive environments and high-temperature industrial enclosures. |
| Leakage ID | ≤1.0 μA at 18 V - Minimizes standby power loss and avoids false triggering in low-current sensor signal paths. |
| AEC-Q101 | Qualified - Certified for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness. |
Pinout & Package
Package: SMBG (DO-215AA), surface-mount, gull-wing leads, matte tin-plated terminals compliant with J-STD-002 and JESD 22-B102. No polarity marking - bidirectional symmetry eliminates cathode/anode orientation concerns during placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode / Cathode (symmetrical) | Bidirectional surge path | Either terminal serves as input/output for transient energy; no DC polarity dependency - simplifies PCB layout and routing. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Handles high-energy transients from inductive switching or ESD without degradation - suitable for CAN bus and LIN line protection. |
| AEC-Q101 qualification | Validated for automotive applications including engine control units, ADAS sensors, and body electronics with extended lifetime requirements. |
| MSL Level 1 (260 °C peak reflow) | Compatible with standard lead-free SMT reflow profiles - no moisture sensitivity handling required prior to assembly. |
| Glass-passivated junction | Ensures stable VBR tolerance and low parameter drift over time and temperature - critical for precision analog front-ends. |
| Low clamping ratio (VC/VBR ≈ 1.32) | Minimizes overvoltage overshoot during clamping - protects 3.3 V and 5 V logic rails without additional series impedance. |
Applications
| Automotive Sensor Protection | Industrial I/O Interface |
|---|---|
Use Scenario: Protecting ABS wheel speed sensor outputs from load dump and ISO 7637-2 pulse 5a/b transients in 12 V vehicle systems. IC Role / Device Role / Timing Role: Bidirectional TVS placed across differential signal pair (e.g., GMR sensor output) to clamp ±200 V spikes within nanoseconds. Use Value: Prevents latch-up or permanent damage to downstream signal conditioners while maintaining signal integrity below 27.6 V clamping threshold. |
Use Scenario: Safeguarding RS-485 transceiver inputs in factory automation PLC modules exposed to motor drive noise and ground bounce. IC Role / Device Role / Timing Role: Parallel-connected TVS on A/B bus lines to shunt fast-rising EFT bursts (IEC 61000-4-4) and surge events (IEC 61000-4-5). Use Value: Maintains communication uptime by limiting bus voltage excursions to safe levels without affecting data rate or common-mode range. |
| Consumer Power Adapter Input | Telecom Line Card Surge Protection |
Use Scenario: Secondary-side transient suppression on 19 V laptop adapter outputs subjected to hot-plug and capacitive discharge events. IC Role / Device Role / Timing Role: Bidirectional clamping device placed between VOUT and GND to absorb 600 W surges without forward conduction. Use Value: Eliminates need for separate unidirectional devices - reduces BOM count and PCB area while meeting UL 497B protector classification. |
Use Scenario: Primary protection stage on POTS line interface cards handling lightning-induced surges up to 10/700 μs waveforms. IC Role / Device Role / Timing Role: First-line TVS in hybrid protection circuit (with gas discharge tube and PTC), clamping fast-rising edges before secondary stages engage. Use Value: Low VC enables coordination with slower but higher-energy protectors - achieves staged, low-clamp system-level immunity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ18CA | Same VWM (18 V), identical SMB (DO-214AA) package but 600 W rating at 10/1000 μs; slightly higher VC (29.2 V) and lower IPPM (20.5 A). | Less thermal margin due to higher RθJA (125 °C/W vs. 100 °C/W); not AEC-Q101 qualified. | Select SMBJ18CA only for cost-sensitive industrial designs where automotive qualification is unnecessary. |
| SMCJ18CA | Same VWM and VBR range, but larger SMC (DO-214AB) package delivering 1500 W peak power and 100 A IPPM; VC = 29.2 V. | Higher surge capacity suits mains-connected equipment; footprint incompatible with SMBG layout. | Choose SMCJ18CA when system-level surge tests require >600 W headroom and board space permits larger package. |
Compared with SMBJ18CA and SMCJ18CA, the SMBG18CAHE3/5B offers optimal balance of AEC-Q101 compliance, compact SMBG footprint, and verified 600 W clamping performance - making it preferred for space-constrained automotive and industrial edge nodes where qualification and thermal efficiency are mandatory.
Availability
SMBG18CAHE3/5B is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial RS-485 networks, and telecom line card protection requiring stable component supply, AEC-Q101 traceability, and consistent 13" tape-and-reel delivery.
Supply support for SMBG18CAHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and application-specific optimization.
The SMBG series was engineered for high-reliability surface-mount transient suppression in automotive and industrial environments - prioritizing AEC-Q101 qualification, low-profile packaging, and precise clamping performance under real-world surge conditions.
FAQ
What is the clamping voltage of SMBG18CAHE3/5B at its rated peak pulse current?
The SMBG18CAHE3/5B has a maximum clamping voltage (VC) of 27.6 V at its rated peak pulse current (IPPM) of 21.7 A, measured using the standard 10/1000 μs waveform. This value ensures downstream ICs experience minimal overvoltage stress during transient events. The SMBG18CAHE3/5B maintains this clamping performance across its full operating temperature range from –55 °C to +150 °C.
Is SMBG18CAHE3/5B suitable for automotive applications?
Yes, the SMBG18CAHE3/5B is AEC-Q101 qualified and specifically designed for automotive use, including engine control units, ADAS sensors, and body electronics. Its glass-passivated junction, MSL Level 1 reflow compatibility, and guaranteed operation from –55 °C to +150 °C meet stringent automotive reliability requirements. The SMBG18CAHE3/5B also carries UL 497B recognition for protector classification in vehicle systems.
Does SMBG18CAHE3/5B have polarity markings on the package?
No, the SMBG18CAHE3/5B is a bidirectional TVS diode and carries no polarity marking on the SMBG (DO-215AA) package. Its symmetrical construction allows either terminal to serve as input or return path - eliminating orientation constraints during automated placement and simplifying PCB layout. This distinguishes it from unidirectional variants like SMBG18A, which feature a cathode band.
What is the maximum reverse leakage current for SMBG18CAHE3/5B at its standoff voltage?
The SMBG18CAHE3/5B exhibits a maximum reverse leakage current (ID) of 1.0 μA at its 18 V standoff voltage (VWM) and 25 °C ambient temperature. This ultra-low leakage preserves signal integrity in high-impedance sensor circuits and minimizes standby power loss in battery-powered systems. The SMBG18CAHE3/5B maintains leakage below 5.0 μA up to +125 °C per datasheet specifications.
How does the SMBG18CAHE3/5B differ from the SMBJ18CA in terms of thermal performance?
The SMBG18CAHE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W, compared to 125 °C/W for the SMBJ18CA - a 20% improvement enabled by the SMBG (DO-215AA) package's enhanced thermal pad design. This allows the SMBG18CAHE3/5B to sustain higher surge repetition rates or operate reliably in tighter thermal envelopes. Both share identical VWM and VBR, but only the SMBG18CAHE3/5B is AEC-Q101 qualified.
SMBG18CAHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 18V
- Voltage - Breakdown (Min):
- 20V
- Voltage - Clamping (Max) @ Ipp:
- 29.2V
- Current - Peak Pulse (10/1000µs):
- 20.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG18CAHE3/5B FAQ
1.How can I place an order for SMBG18CAHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG18CAHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG18CAHE3/5B reliable?
The price and inventory of SMBG18CAHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG18CAHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBG18CAHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG18CAHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG18CAHE3/5B?
SMBG18CAHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG18CAHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG18CAHE3/5B?
For technical support, including SMBG18CAHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG18CAHE3/5B requirements.
6.How does Aetrix verify that SMBG18CAHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBG18CAHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG18CAHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBG18CAHE3/5B?
All SMBG18CAHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG18CAHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG18CAHE3/5B part is unused and in its original packaging.
Return procedure for SMBG18CAHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG18CAHE3/5B Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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