Vishay General Semiconductor - Diodes Division SMBG20AHE3/52
- Part No.:
- SMBG20AHE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG20AHE3/52.pdf
- Description:
- TVS DIODE 20VWM 32.4VC DO215AA
- Quantity:
- Payment:

- Shipping:

Inventory:4,260
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBG20AHE3/52 from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMBG (DO-215AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 20 V stand-off voltage (VWM), 22.2–24.5 V breakdown voltage (VBR) at 1 mA, 32.4 V clamping voltage (VC) at 18.5 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - deployed in automotive ECUs, industrial sensor interfaces, and power supply input stages.
For engineers reviewing the SMBG20AHE3/52 datasheet, SMBG20AHE3/52 pinout, SMBG20AHE3/52 application, or SMBG20AHE3/52 equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on standard 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal bias it presents high impedance (<1 μA leakage at 20 V), then rapidly avalanches when transient voltage exceeds VBR, diverting surge current away from downstream ICs. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive transients.
Designed for automotive-grade environments, SMBG20AHE3/52 meets AEC-Q101 stress testing requirements and is rated for -55 °C to +150 °C operating junction temperature. Its thermal resistance (RθJA = 100 °C/W) and RθJL = 20 °C/W support effective heat dissipation during 8.3 ms half-sine surges up to 100 A (IFSM).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 20 V - maximum continuous reverse working voltage before clamping begins; sets upper limit for protected circuit's nominal DC rail. |
| VBR @ IT = 1 mA | 22.2–24.5 V - guaranteed avalanche onset range; ensures predictable turn-on margin above VWM. |
| VC @ IPPM = 18.5 A | 32.4 V - clamped voltage during 600 W transient; defines worst-case overvoltage seen by protected load. |
| PPPM | 600 W - peak pulse power handling with 10/1000 μs waveform; validates immunity to IEC 61000-4-5 Level 4 surges. |
| IFSM | 100 A - non-repetitive forward surge rating (8.3 ms half-sine); supports protection against inductive switch-off events. |
| Junction Temp Range | -55 °C to +150 °C - enables deployment in engine bay, motor drives, and industrial control cabinets without derating. |
| Package | SMBG (DO-215AA) - surface-mount outline with 0.235" × 0.255" footprint; optimized for high-density PCB layouts and reflow compatibility. |
Pinout & Package
Package: SMBG (DO-215AA) - low-profile, molded plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; meets UL 94 V-0 flammability rating and JESD 201 Class 2 whisker resistance. Polarity marked with cathode band; anode and cathode terminals aligned per standard SMBG orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | High-side connection point for unidirectional clamping | Connected to protected line (e.g., 24 V rail); conducts surge current to ground when voltage exceeds VBR. |
| Anode | Reference/return path | Typically tied to system ground or low-impedance return plane; completes shunt path during transient event. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTOL, TCT, and ESD; supports Tier-1 ECU designs. |
| 600 W peak pulse power (10/1000 μs) | Withstands IEC 61000-4-5 combination wave surges up to ±2 kV (open-circuit)/±1 kV (short-circuit) without degradation. |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes overvoltage overshoot during fast transients - critical for safeguarding 3.3 V/5 V logic and MOSFET gate drivers. |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage drift over temperature and lifetime; improves long-term field reliability. |
| MSL Level 1 (260 °C peak reflow) | Compatible with standard lead-free reflow profiles without moisture sensitivity concerns; eliminates bake requirements pre-assembly. |
Applications
| Automotive Power Distribution | Industrial Sensor Signal Lines |
|---|---|
Use Scenario: Protection of 24 V supply inputs in body control modules (BCM) and lighting drivers against load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed between battery rail and DC-DC converter input. Use Value: Limits voltage excursion to ≤32.4 V during 100 A load dump events, preventing damage to upstream regulators and microcontrollers. | Use Scenario: Guarding analog outputs (e.g., 4–20 mA current loops) in PLC I/O modules against ESD and cable-induced surges. IC Role / Device Role / Timing Role: Unidirectional clamp referenced to system ground, installed at connector entry point. Use Value: Clamps transients within <1 ns response time while maintaining <1 μA leakage at 20 V - preserving signal integrity and measurement accuracy. |
| Telecom DC Power Feeds | Consumer Appliance Motor Control |
Use Scenario: Safeguarding PoE-powered equipment (e.g., IP cameras) against induced surges on 48 V DC input lines. IC Role / Device Role / Timing Role: Primary overvoltage clamp on midspan injector output side. Use Value: Absorbs 600 W surge energy without failure, enabling compliance with IEC 61000-4-5 Ed. 3 Level 4 immunity requirements. | Use Scenario: Protecting gate drivers and MCU I/O in washing machine motor inverters exposed to back-EMF spikes. IC Role / Device Role / Timing Role: Localized clamp across half-bridge high-side driver supply rail. Use Value: Prevents latch-up or oxide rupture in 3.3 V logic by limiting transient overshoot to 32.4 V during 100 A inductive switching events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBG20AE3/52 | Same electrical specs and AEC-Q101 qualification; differs only in packaging suffix (E3 vs HE3) - HE3 denotes AEC-Q101 grade, E3 is industrial grade. | No functional difference in circuit operation; HE3 version provides full automotive qualification traceability. | Select SMBG20AHE3/52 when automotive PPAP documentation and AEC-Q101 conformance records are required. |
| SMAJ20A | Same VWM (20 V), VC = 32.4 V, but lower PPPM = 400 W; SMA package (DO-214AC) vs SMBG (DO-215AA); RθJA = 130 °C/W. | Lower surge capacity and higher thermal resistance limit use to less severe environments (e.g., consumer vs automotive). | Choose SMAJ20A only for cost-sensitive, non-automotive applications where 400 W surge rating suffices and board space allows larger SMA footprint. |
Compared with SMBG20AE3/52, SMBG20AHE3/52 guarantees full AEC-Q101 compliance documentation; versus SMAJ20A, it delivers 50 % higher surge power handling and superior thermal performance in the same PCB area - making it the preferred choice for mission-critical 24 V systems.
Availability
SMBG20AHE3/52 is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interface modules, and telecom DC power feed applications requiring stable component supply and AEC-Q101 traceability.
Supply support for SMBG20AHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, automotive qualification, and high-volume manufacturability.
The SMBG series was developed specifically for high-power, surface-mount transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where AEC-Q101 compliance and 600 W surge capability are mandatory.
FAQ
What is the clamping voltage of SMBG20AHE3/52 at its rated peak pulse current?
The SMBG20AHE3/52 has a maximum clamping voltage (VC) of 32.4 V at 18.5 A peak pulse current (IPPM) with a 10/1000 μs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during transient events. The SMBG20AHE3/52 maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is SMBG20AHE3/52 suitable for bidirectional transient protection?
No - SMBG20AHE3/52 is a unidirectional TVS diode, indicated by the "A" suffix (vs "CA" for bidirectional). It conducts only in reverse bias above VBR and blocks forward current beyond ~3.5 V. For bidirectional AC-line or data-line protection, select SMBG20CAHE3/52 instead. The SMBG20AHE3/52 must be oriented with its cathode band toward the protected line and anode to ground.
Does SMBG20AHE3/52 require derating at elevated ambient temperatures?
Yes - SMBG20AHE3/52 must be derated above 25 °C ambient per Figure 2 in the Vishay datasheet (Document Number: 88456). At 85 °C ambient, its 600 W peak pulse power rating reduces to approximately 420 W. Derating ensures junction temperature remains ≤150 °C during surge events. Layout with 0.2" × 0.2" copper pads per terminal is required to achieve published ratings.
What is the meaning of the "HE3" suffix in SMBG20AHE3/52?
The "HE3" suffix in SMBG20AHE3/52 indicates RoHS-compliant construction with full AEC-Q101 qualification (H = AEC-Q101, E3 = RoHS-compliant industrial grade). This distinguishes it from E3-only (industrial, non-automotive) and M3/HM3 (halogen-free) variants. The HE3 grade ensures compliance documentation, lot-level traceability, and stress-test validation required for automotive production.
Can SMBG20AHE3/52 replace SMAJ20A in an existing design?
SMBG20AHE3/52 is not a direct drop-in replacement for SMAJ20A due to different packages: SMBG (DO-215AA) vs SMA (DO-214AC). While both share identical VWM (20 V) and VC (32.4 V), the SMBG20AHE3/52 offers 50 % higher peak pulse power (600 W vs 400 W) and lower thermal resistance. PCB layout revision is required to accommodate the SMBG footprint, but the upgrade enhances surge robustness in demanding applications.
SMBG20AHE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 20V
- Voltage - Breakdown (Min):
- 22.2V
- Voltage - Clamping (Max) @ Ipp:
- 32.4V
- Current - Peak Pulse (10/1000µs):
- 18.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG20AHE3/52 FAQ
1.How can I place an order for SMBG20AHE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG20AHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG20AHE3/52 reliable?
The price and inventory of SMBG20AHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG20AHE3/52 is usually 5 days.
3.What payment methods are accepted for SMBG20AHE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG20AHE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG20AHE3/52?
SMBG20AHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG20AHE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG20AHE3/52?
For technical support, including SMBG20AHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG20AHE3/52 requirements.
6.How does Aetrix verify that SMBG20AHE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBG20AHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG20AHE3/52 meets industry standards.
7.What is the process for return or replacement of SMBG20AHE3/52?
All SMBG20AHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBG20AHE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG20AHE3/52 part is unused and in its original packaging.
Return procedure for SMBG20AHE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG20AHE3/52 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

