My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBG45AHE3/5B
- Part No.:
- SMBG45AHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG45AHE3/5B.pdf
- Description:
- TVS DIODE 45VWM 72.7VC DO215AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,696
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBG45AHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMBG (DO-215AA) package, designed for clamping transient overvoltages on power and signal lines. It features a 45 V stand-off voltage (VWM), 50.0–55.3 V breakdown voltage (VBR) at 1 mA, 72.7 V maximum clamping voltage (VC) at 8.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - used to protect automotive ECUs, industrial I/O ports, and sensor interfaces against ESD and load dump.
For engineers reviewing the SMBG45AHE3/5B datasheet, SMBG45AHE3/5B pinout, SMBG45AHE3/5B application, or SMBG45AHE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device in series with sensitive downstream circuitry, conducting only when reverse voltage exceeds VBR to divert surge energy away from protected components. Its glass-passivated junction ensures stable leakage performance and fast response time (<1 ns), while the low Rsurge enables effective suppression of high-current transients without excessive voltage overshoot.
The SMBG45AHE3/5B is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine) and exhibits 1.0 μA max reverse leakage at VWM. Thermal resistance is 100 °C/W (junction-to-ambient, on recommended pad layout), supporting reliable operation in automotive under-hood environments up to +125 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 45 V - Maximum continuous reverse operating voltage before clamping begins; sets upper limit for normal circuit operation. |
| VBR (min/max) | 50.0 V / 55.3 V at 1 mA - Confirmed breakdown range ensures predictable turn-on across production lot and temperature. |
| VC @ IPPM | 72.7 V at 8.3 A - Clamping voltage during 10/1000 μs surge defines worst-case stress on protected IC or MOSFET. |
| PPPM | 600 W - Peak pulse power handling capability per JEDEC standard, enabling robust protection against ISO 7637-2 Pulse 1/2a/5a. |
| IFSM | 100 A - Surge current rating for 8.3 ms half-sine wave confirms suitability for automotive load-dump events. |
| TJ max | +150 °C - Maximum junction temperature supports operation in AEC-Q101-qualified automotive modules. |
| Package | SMBG (DO-215AA) - Standardized surface-mount outline with 0.235" × 0.255" footprint and gull-wing leads for automated assembly. |
Pinout & Package
SMBG45AHE3/5B uses the SMBG (DO-215AA) package: a low-profile, gull-wing leaded surface-mount case with cathode band marking. Leads are matte tin-plated, solderable per J-STD-002 and JESD 22-B102, and qualified to MSL level 1 (peak reflow 260 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal (cathode-banded end is opposite) | Connected to ground or low-impedance return path; completes clamping loop during transient events. |
| Cathode | Reverse-biased input terminal (marked with band) | Connected to protected line (e.g., 45 V supply rail); conducts when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensor interfaces. |
| 600 W peak pulse power (10/1000 μs) | Meets ISO 7637-2 and IEC 61000-4-5 surge immunity requirements for Level 3/4 protection. |
| Glass passivated junction | Ensures stable VBR tolerance, low leakage (<1.0 μA), and long-term reliability under thermal cycling. |
| Low profile SMBG package | Enables high-density PCB layouts and compatibility with standard SMT pick-and-place equipment. |
| Matte tin-plated leads | Supports lead-free reflow soldering per J-STD-020, with whisker resistance per JESD 201 Class 2. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 45 V battery-supplied ECUs from load dump transients (ISO 7637-2 Pulse 5a) and alternator switching spikes. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between power rail and chassis ground to shunt surge current. Use Value: Limits voltage seen by downstream DC/DC converters and microcontrollers to ≤72.7 V, preventing latch-up or gate oxide damage. |
Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) connected to PLC analog inputs against ESD and field-wiring transients. IC Role / Device Role / Timing Role: Line-side TVS element on 4–20 mA or 0–10 V signal paths, mounted adjacent to connector. Use Value: Clamps fast-rising ESD events (<1 ns rise) to sub-75 V levels, preserving ADC accuracy and preventing op-amp saturation. |
| Telecom Power Supply Input | OBD-II Diagnostic Port Protection |
Use Scenario: Secondary-side overvoltage suppression on telecom 48 V DC-DC converter outputs feeding baseband processors. IC Role / Device Role / Timing Role: Standoff-rated TVS placed after filtering stage to absorb residual surges escaping primary protection. Use Value: Maintains 45 V system margin while delivering 600 W pulse handling - sufficient for repeated lightning-induced surges per IEC 61000-4-5. |
Use Scenario: Bidirectional-capable variant not applicable; SMBG45AHE3/5B used in unidirectional OBD-II VBAT line protection where polarity is fixed. IC Role / Device Role / Timing Role: Cathode tied to OBD-II pin 16 (+12 V / +45 V), anode grounded - clamps positive transients only. Use Value: Prevents damage to diagnostic tool interface ICs during hot-plug events or vehicle jump-start transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ45A-E3/5B | Same VWM/VBR/VC specs but in SMB (DO-214AA) package; 100 °C/W RθJA vs. SMBG's 100 °C/W; identical AEC-Q101 status. | SMB footprint differs: 0.205" × 0.215" vs. SMBG's 0.235" × 0.255"; requires PCB redesign. | Select SMBJ45A-E3/5B only if legacy SMB layout exists and thermal pad area is constrained. |
| SMCJ45A-13-F | Higher PPPM = 1500 W, larger SMC (DO-214AB) package; VC = 73.0 V at 21.2 A; same VWM/VBR range; AEC-Q101 qualified. | Used where higher surge margin is required (e.g., alternator feed lines), but occupies ~2.5× PCB area. | Choose SMCJ45A-13-F when system-level testing reveals 600 W insufficient for worst-case load dump repetition. |
Compared with SMBJ45A-E3/5B and SMCJ45A-13-F, SMBG45AHE3/5B delivers optimal balance of AEC-Q101 compliance, 600 W surge capacity, and compact SMBG footprint - ideal for space-constrained automotive modules requiring validated reliability without layout change.
Availability
SMBG45AHE3/5B is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor signal conditioning circuits, and telecom power supply inputs requiring stable component supply, AEC-Q101 assurance, and RoHS-compliant manufacturing.
Supply support for SMBG45AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on automotive, industrial, and computing applications.
The SMBG Transient Voltage Suppressor family was developed to deliver AEC-Q101-qualified, high-power TVS performance in a compact gull-wing surface-mount package optimized for automated manufacturing and under-hood reliability.
FAQ
What is the clamping voltage of SMBG45AHE3/5B at its rated peak pulse current?
The SMBG45AHE3/5B has a maximum clamping voltage (VC) of 72.7 V at 8.3 A peak pulse current (IPPM) with a 10/1000 μs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is measured per JEDEC standards. The SMBG45AHE3/5B maintains this clamping performance across its qualified temperature range and lifetime.
Is SMBG45AHE3/5B suitable for automotive applications?
Yes, SMBG45AHE3/5B is AEC-Q101 qualified and explicitly rated for automotive use, including engine control units, body electronics, and ADAS sensor interfaces. Its 150 °C maximum junction temperature, glass-passivated junction, and MSL level 1 reflow compatibility meet stringent automotive reliability requirements. The SMBG45AHE3/5B data sheet confirms qualification per AEC-Q101 test conditions.
What does the "HE3" suffix indicate in SMBG45AHE3/5B?
The "HE3" suffix in SMBG45AHE3/5B denotes RoHS-compliant construction with AEC-Q101 qualification. Per Vishay's ordering nomenclature, HE3 indicates halogen-free, RoHS-compliant materials and full AEC-Q101 stress testing - distinguishing it from E3 (RoHS only) and HM3 (halogen-free + AEC-Q101) variants. The "5B" denotes 13-inch tape-and-reel packaging with 3200 units per reel.
How does SMBG45AHE3/5B differ from bidirectional TVS diodes like SMBG45CA?
SMBG45AHE3/5B is unidirectional and conducts only during positive transients relative to its cathode, whereas SMBG45CA is bidirectional and suppresses surges of either polarity. The SMBG45AHE3/5B has a marked cathode band and must be oriented correctly in-circuit; SMBG45CA lacks polarity marking. Their VBR, VC, and PPPM values are otherwise closely matched, but SMBG45AHE3/5B is preferred for DC power rails with defined polarity.
What is the maximum reverse leakage current for SMBG45AHE3/5B at 45 V?
The SMBG45AHE3/5B exhibits a maximum reverse leakage current (ID) of 1.0 μA at its rated stand-off voltage of 45 V (VWM), measured at 25 °C. This low leakage ensures minimal power loss in standby mode and avoids false triggering in precision analog or low-power sensor circuits. Leakage remains within specification up to 125 °C ambient per thermal derating curves.
SMBG45AHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 45V
- Voltage - Breakdown (Min):
- 50V
- Voltage - Clamping (Max) @ Ipp:
- 72.7V
- Current - Peak Pulse (10/1000µs):
- 8.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG45AHE3/5B FAQ
1.How can I place an order for SMBG45AHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG45AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG45AHE3/5B reliable?
The price and inventory of SMBG45AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG45AHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBG45AHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG45AHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG45AHE3/5B?
SMBG45AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG45AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG45AHE3/5B?
For technical support, including SMBG45AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG45AHE3/5B requirements.
6.How does Aetrix verify that SMBG45AHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBG45AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG45AHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBG45AHE3/5B?
All SMBG45AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG45AHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG45AHE3/5B part is unused and in its original packaging.
Return procedure for SMBG45AHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG45AHE3/5B Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
