Vishay General Semiconductor - Diodes Division SMBG45-E3/5B
- Part No.:
- SMBG45-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG45-E3/5B.pdf
- Description:
- TVS DIODE 45VWM 80.3VC DO215AA
- Quantity:
- Payment:

- Shipping:

Inventory:6,691
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBG45-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount TransZORB® transient voltage suppressor (TVS) diode in DO-215AA (SMBG) package, designed for clamping inductive switching transients and ESD events on power and signal lines. It features 45 V stand-off voltage (VWM), 50.0–55.3 V breakdown voltage (VBR) at 1 mA, 72.7 V maximum clamping voltage (VC) at 8.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform.
For engineers reviewing the SMBG45-E3/5B datasheet, SMBG45-E3/5B pinout, SMBG45-E3/5B application, or SMBG45-E3/5B equivalent, this device is selected for robust overvoltage protection in automotive power rails, industrial sensor interfaces, DC-DC converter input stages, and USB/RS-485 line protection where fast response (<1 ns), low clamping ratio, and AEC-Q101 qualification are required.
Technical Context
The SMBG45-E3/5B operates as a silicon avalanche diode with glass-passivated junction, delivering unidirectional clamping action triggered when reverse voltage exceeds its VBR threshold. Its thermal resistance (RθJA = 100 °C/W) and junction-to-lead resistance (RθJL = 20 °C/W) support reliable operation up to 150 °C junction temperature under repetitive surge conditions.
It meets MSL Level 1 per J-STD-020 (peak reflow 260 °C), is RoHS-compliant (E3 suffix), and qualified to AEC-Q101 for automotive use. The device exhibits <1.0 µA reverse leakage at 45 V and clamps to ≤72.7 V at 8.3 A IPPM - enabling effective protection of downstream MOSFETs, ICs, and communication transceivers without excessive voltage overshoot.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 45 V - Maximum continuous reverse operating voltage before clamping begins; sets safe margin below system rail voltage. |
| VBR (Breakdown Voltage) | 50.0–55.3 V at 1 mA - Confirmed avalanche initiation range; ensures predictable turn-on during transients. |
| VC (Clamping Voltage) | 72.7 V at 8.3 A IPPM - Peak voltage seen by protected circuit during 10/1000 µs surge; defines worst-case stress level. |
| PPPM (Peak Pulse Power) | 600 W - Sustained energy absorption capability under standardized 10/1000 µs waveform; enables single-event surge handling. |
| ID (Reverse Leakage) | ≤1.0 µA at 45 V - Minimal standby power loss and negligible loading on high-impedance signal paths. |
| TJ max | 150 °C - Maximum allowable junction temperature; supports operation in under-hood automotive and industrial enclosures. |
| Package | DO-215AA (SMBG) - Surface-mount outline with gull-wing leads; compatible with automated placement and reflow soldering. |
Pinout & Package
DO-215AA (SMBG) package: surface-mount gull-wing leaded case with cathode band marking on one end. Matte tin-plated leads meet J-STD-002 and JESD 22-B102 solderability requirements; E3 suffix complies with JESD 201 Class 1A whisker test.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., GND or return path); conducts during forward surge or bias conditions. |
| Cathode (banded end) | Reverse-biased clamping terminal | Connected to protected line (e.g., 48 V rail or CAN_H); avalanches into conduction when reverse voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables suppression of high-energy load-dump and inductive kick events common in 24–48 V automotive systems. |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock testing. |
| Glass-passivated junction | Ensures stable VBR and low leakage over lifetime; resists moisture ingress and contamination in harsh environments. |
| MSL Level 1 (260 °C peak) | Supports standard lead-free reflow profiles without popcorn or delamination risk during PCB assembly. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage stress on protected ICs - critical for safeguarding 5 V or 3.3 V logic interfacing with 45 V rails. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 48 V battery-fed ECUs against load dump (ISO 7637-2 Pulse 5a) and alternator transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and DC-DC input, clamping surges within nanoseconds. Use Value: Limits peak voltage to ≤72.7 V, preventing damage to buck controller ICs rated for 80 V absolute maximum. |
Use Scenario: Shielding analog sensor outputs (e.g., pressure or temperature transducers) from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) TVS mounted at connector entry point, shunting transients before signal conditioning op-amps. Use Value: Maintains signal integrity with minimal DC loading while responding faster than RC filters to sub-ns ESD pulses. |
| DC-DC Converter Input Stage | RS-485/Can Bus Line Protection |
Use Scenario: Safeguarding isolated DC-DC modules in telecom power supplies subjected to lightning-induced surges on primary-side inputs. IC Role / Device Role / Timing Role: Primary-side TVS absorbing 600 W surges before input capacitors and MOSFET switches. Use Value: Prevents catastrophic failure of primary-side FETs by clamping transients below their 100 V VDS rating. |
Use Scenario: Protecting RS-485 transceivers connected to long field wiring exposed to induced surges and ground potential differences. IC Role / Device Role / Timing Role: Unidirectional TVS on each data line (A/B), referenced to local ground, with low capacitance (<100 pF). Use Value: Clamps common-mode surges to ≤72.7 V without distorting differential signaling due to matched clamping characteristics. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ45A-E3/5B | Same VWM (45 V), identical DO-214AB (SMB) package but slightly higher VC (73.0 V vs. 72.7 V); 10% lower thermal resistance (RθJA = 90 °C/W). | Preferred for space-constrained layouts requiring tighter thermal management; not AEC-Q101 qualified. | Select SMBJ45A-E3/5B only if AEC-Q101 compliance is unnecessary and board real estate favors SMB over SMBG footprint. |
| SMBG45HE3/5B | Identical electrical specs and DO-215AA package, but HE3 suffix denotes AEC-Q101 qualification and enhanced whisker resistance (JESD 201 Class 2). | Required for automotive safety-critical modules (e.g., ADAS sensors) needing full automotive qualification traceability. | Choose SMBG45HE3/5B when full AEC-Q101 documentation, lot-level traceability, and extended whisker testing are mandated. |
Compared with SMBJ45A-E3/5B and SMBG45HE3/5B, the SMBG45-E3/5B provides certified AEC-Q101 performance in the larger DO-215AA package - offering superior surge energy handling margin and compatibility with high-reliability automotive harness interfaces where lead pitch and thermal mass matter.
Availability
SMBG45-E3/5B is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, and DC-DC converter input stage surge suppression requiring stable component supply across multi-year production cycles.
Supply support for SMBG45-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The SMBG series was engineered for high-energy transient suppression in automotive and industrial environments, combining AEC-Q101 qualification, robust glass-passivated junctions, and optimized thermal design for surface-mount survivability.
FAQ
What is the clamping voltage of SMBG45-E3/5B at its rated peak pulse current?
The SMBG45-E3/5B has a maximum clamping voltage (VC) of 72.7 V at 8.3 A peak pulse current (IPPM) under the 10/1000 µs waveform condition. This value is measured per ANSI/IEEE C62.35 standards and defines the upper voltage limit imposed on protected circuits during surge events - critical for ensuring downstream components remain within their absolute maximum ratings.
Is SMBG45-E3/5B qualified for automotive applications?
Yes, SMBG45-E3/5B is AEC-Q101 qualified, as confirmed in Vishay's official datasheet (Document Number: 88456, Revision: 12-Nov-12). This qualification covers stress tests including temperature cycling, high-temperature operating life, and mechanical shock - making SMBG45-E3/5B suitable for engine control units, body electronics, and ADAS subsystems where automotive-grade reliability is mandatory.
What does the "E3/5B" suffix mean in SMBG45-E3/5B?
The "E3" suffix indicates RoHS-compliant, commercial-grade construction with JESD 201 Class 1A whisker resistance; "5B" specifies packaging in 13-inch diameter plastic tape and reel with 3200 units per reel. This differs from "52" (7-inch reel, 750 units) and "HE3" (AEC-Q101 qualified variant), confirming SMBG45-E3/5B is the standard automotive-capable version in high-volume reel format.
How does SMBG45-E3/5B differ from bi-directional TVS diodes like SMBG45CA?
SMBG45-E3/5B is unidirectional and features a cathode band for polarity-sensitive placement, whereas SMBG45CA is bi-directional with no marking and symmetrical clamping in both directions. The unidirectional SMBG45-E3/5B offers lower leakage (<1 µA vs. ≤2 µA for CA types) and is preferred for DC power line protection; SMBG45CA suits AC-coupled or floating signal lines like antenna feeds or audio paths.
What is the thermal resistance of SMBG45-E3/5B, and how does it affect layout design?
SMBG45-E3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead resistance (RθJL) of 20 °C/W. These values require minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal for rated power dissipation - underscoring the need for adequate copper area and thermal vias in PCB layout to maintain TJ ≤ 150 °C during repetitive surge events.
SMBG45-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 45V
- Voltage - Breakdown (Min):
- 50V
- Voltage - Clamping (Max) @ Ipp:
- 80.3V
- Current - Peak Pulse (10/1000µs):
- 7.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG45-E3/5B FAQ
1.How can I place an order for SMBG45-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG45-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG45-E3/5B reliable?
The price and inventory of SMBG45-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG45-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBG45-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG45-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG45-E3/5B?
SMBG45-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG45-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG45-E3/5B?
For technical support, including SMBG45-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG45-E3/5B requirements.
6.How does Aetrix verify that SMBG45-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBG45-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG45-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBG45-E3/5B?
All SMBG45-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG45-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG45-E3/5B part is unused and in its original packaging.
Return procedure for SMBG45-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG45-E3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

