My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBG45HE3/52
- Part No.:
- SMBG45HE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG45HE3/52.pdf
- Description:
- TVS DIODE 45VWM 80.3VC DO215AA
- Quantity:
- Payment:
- Shipping:
Inventory:5,655
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBG45HE3/52 from Vishay General Semiconductor is a uni-directional transient voltage suppressor (TVS) diode in DO-215AA (SMBG) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 45 V stand-off voltage (VWM), 50.0–55.3 V breakdown voltage (VBR) at 1 mA, 72.7 V clamping voltage (VC) at 8.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power electronics and industrial sensor interfaces.
For engineers reviewing the SMBG45HE3/52 datasheet, SMBG45HE3/52 pinout, SMBG45HE3/52 application, or SMBG45HE3/52 equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance data, RoHS-compliant HE3 suffix marking, and precise mechanical dimensions per DO-215AA outline - all critical for ESD/surge co-design and layout validation.
Technical Context
This TVS diode operates as a uni-directional clamping device, leveraging a glass-passivated silicon junction to achieve sub-nanosecond response time and low incremental surge resistance. Its 150 °C maximum junction temperature and 100 °C/W junction-to-ambient thermal resistance support sustained operation under repetitive transients when mounted on 5.0 mm × 5.0 mm copper pads.
The SMBG45HE3/52 is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine) and exhibits 1.0 µA maximum reverse leakage at VWM. Its AEC-Q101 qualification confirms suitability for automotive-grade power rail protection where reliability under thermal cycling and mechanical shock is mandatory.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 45 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC bias margin for protected line. |
| VBR (min/max) | 50.0 V / 55.3 V at 1 mA - Confirmed breakdown threshold range; ensures predictable turn-on during fast transients. |
| VC @ IPPM | 72.7 V at 8.3 A - Clamped voltage under 10/1000 µs surge; determines maximum stress on downstream ICs. |
| PPPM | 600 W - Peak pulse power handling capability; enables protection against IEC 61000-4-5 Level 4 surges. |
| TJ max | +150 °C - Maximum junction temperature; supports operation in under-hood automotive environments. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance; informs heatsinking requirements for high-duty-cycle events. |
| AEC-Q101 | Qualified - Validated for automotive electronic systems per stress test standard; includes temperature cycling, HTRB, and mechanical shock. |
Pinout & Package
Package: DO-215AA (SMBG), surface-mount, gull-wing leadform. Cathode indicated by band on body end; leads are matte tin plated, solderable per J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or return path; completes clamping loop during positive transients on cathode side. |
| Cathode | High-side connection point | Connected to protected line (e.g., 45 V supply rail); conducts surge current to ground when VAK exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Enables stable VBR tolerance and long-term reliability under humidity and thermal stress. |
| 600 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 surge immunity up to 4 kV (line-earth) without derating in standard PCB layouts. |
| AEC-Q101 qualified | Validates performance across -55 °C to +125 °C ambient, including 1000-cycle temperature cycling and 1000-hr HTRB. |
| DO-215AA (SMBG) package | 0.235–0.255 inch body length; compatible with automated SMT placement and reflow profiles up to 260 °C peak. |
| HE3 suffix | RoHS-compliant, AEC-Q101 qualified variant with JESD 201 Class 2 whisker resistance - required for automotive production. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 45 V battery-fed control modules (e.g., body control units) from load dump and alternator ripple. IC Role / Device Role / Timing Role: Uni-directional clamping TVS placed between 45 V input and chassis ground. Use Value: Limits transient overshoot to ≤72.7 V, preventing damage to 50 V-rated DC-DC converters and microcontrollers. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loops) in factory automation sensors exposed to relay switching noise. IC Role / Device Role / Timing Role: Low-capacitance (<100 pF) TVS shunting induced spikes to ground before reaching ADC input. Use Value: Maintains signal integrity with <1 µA leakage at 45 V, avoiding offset errors in precision current measurement circuits. |
| Telecom DC Power Input Stage | Consumer Device USB Power Delivery Path |
Use Scenario: Front-end surge suppression on 48 V PoE-powered network switches and base stations. IC Role / Device Role / Timing Role: Primary TVS on DC input before DC-DC conversion; coordinated with secondary TVS and fuse. Use Value: Withstands 100 A surge (8.3 ms) without failure, enabling compliance with GR-1089-CORE lightning strike requirements. |
Use Scenario: Overvoltage clamp on VBUS line of USB-C PD adapters supporting 45 W (9 V × 5 A) delivery. IC Role / Device Role / Timing Role: Fast-response TVS placed adjacent to USB connector to absorb hot-plug and ESD events. Use Value: Clamps 1 kV ESD contact discharge to <73 V within <1 ns, protecting USB PD controller and port power switch. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ45AHE3/52 | Same VWM (45 V), identical DO-215AA package, but lower PPPM = 600 W (same rating), slightly higher VC = 73.0 V at 8.3 A. | Functionally interchangeable in most 45 V rail protection; minor VC delta has negligible impact on 50 V-tolerant loads. | Select SMBJ45AHE3/52 if legacy design uses SMBJ footprint and requires identical thermal profile (RθJA = 100 °C/W). |
| SMCJ45AHE3/52 | Higher PPPM = 1500 W, larger DO-214AB (SMC) package, same VWM/VBR specs, VC = 73.0 V at 21.2 A. | Used where higher surge energy (e.g., IEC 61000-4-5 Level 5) or longer pulse duration must be absorbed without derating. | Choose SMCJ45AHE3/52 only when board space allows larger SMC package and system-level surge testing exceeds 600 W capability. |
Compared with SMBG45HE3/52, SMBJ45AHE3/52 offers identical form-factor and qualification but marginally higher clamping; SMCJ45AHE3/52 trades compactness for 2.5× surge energy headroom - making SMBG45HE3/52 optimal for space-constrained AEC-Q101 automotive modules needing precise 45 V coordination.
Availability
SMBG45HE3/52 is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, and telecom DC input stage designs requiring stable component supply with full AEC-Q101 traceability and RoHS compliance.
Supply support for SMBG45HE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SMBG series was engineered specifically for surface-mount transient suppression in space-constrained, high-reliability applications - combining AEC-Q101 qualification, low-profile DO-215AA packaging, and consistent 600 W surge capability across the 5.0–188 V range.
FAQ
What is the clamping voltage of SMBG45HE3/52 and how is it measured?
The SMBG45HE3/52 has a maximum clamping voltage (VC) of 72.7 V, measured at a peak pulse current (IPPM) of 8.3 A using a 10/1000 µs double-exponential waveform. This value is guaranteed per the Vishay datasheet (Document Number 88456, page 2) and reflects the voltage seen across the device during standardized surge testing - critical for ensuring downstream ICs remain below their absolute maximum ratings.
Is SMBG45HE3/52 qualified for automotive applications?
Yes, SMBG45HE3/52 carries the HE3 suffix, confirming it is RoHS-compliant and AEC-Q101 qualified per Vishay's documentation (page 3, Notes section). This includes validation for temperature cycling, high-temperature reverse bias (HTRB), and mechanical shock - making SMBG45HE3/52 suitable for under-hood and body-control module deployments.
What does the "HE3" suffix mean in SMBG45HE3/52?
The "HE3" suffix in SMBG45HE3/52 indicates two key attributes: RoHS compliance (lead-free, halogen-free per JEDEC JS709A) and AEC-Q101 qualification. Additionally, HE3 denotes JESD 201 Class 2 whisker resistance - a requirement for automotive production where tin-lead alternatives are prohibited and long-term interconnect reliability is critical.
How does SMBG45HE3/52 differ from SMBG45A-E3/52?
SMBG45HE3/52 is AEC-Q101 qualified and meets JESD 201 Class 2 whisker resistance, whereas SMBG45A-E3/52 is commercial-grade (E3 suffix only) with JESD 201 Class 1A. Both share identical electrical specs (VWM = 45 V, VBR = 50.0–55.3 V, VC = 72.7 V), DO-215AA package, and RoHS compliance - but only SMBG45HE3/52 is approved for automotive production use.
What is the thermal resistance of SMBG45HE3/52 and why does it matter?
SMBG45HE3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value directly impacts safe operating area during repetitive surges: higher RθJA limits duty cycle and requires careful PCB copper area design to avoid thermal runaway - especially in enclosed automotive enclosures.
SMBG45HE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 45V
- Voltage - Breakdown (Min):
- 50V
- Voltage - Clamping (Max) @ Ipp:
- 80.3V
- Current - Peak Pulse (10/1000µs):
- 7.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG45HE3/52 FAQ
1.How can I place an order for SMBG45HE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG45HE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG45HE3/52 reliable?
The price and inventory of SMBG45HE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG45HE3/52 is usually 5 days.
3.What payment methods are accepted for SMBG45HE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG45HE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG45HE3/52?
SMBG45HE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG45HE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG45HE3/52?
For technical support, including SMBG45HE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG45HE3/52 requirements.
6.How does Aetrix verify that SMBG45HE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBG45HE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG45HE3/52 meets industry standards.
7.What is the process for return or replacement of SMBG45HE3/52?
All SMBG45HE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBG45HE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG45HE3/52 part is unused and in its original packaging.
Return procedure for SMBG45HE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG45HE3/52 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
