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Vishay General Semiconductor - Diodes Division SMBG51AHE3/5B

Part No.:
SMBG51AHE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-215AA, SMB Gull Wing
Datasheet:
AetrixSMBG51AHE3/5B.pdf
Description:
TVS DIODE 51VWM 82.4VC DO215AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,796

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Product details

Overview

SMBG51AHE3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMBG (DO-215AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 51 V stand-off voltage (VWM), 56.7–62.7 V breakdown voltage (VBR) at 1 mA, 82.4 V maximum clamping voltage (VC) at 7.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - deployed in automotive sensor signal lines and industrial I/O interfaces.

For engineers reviewing the SMBG51AHE3/5B datasheet, SMBG51AHE3/5B pinout, SMBG51AHE3/5B application, or SMBG51AHE3/5B equivalent, key selection criteria include its AEC-Q101 qualification, unidirectional polarity with cathode band marking, low incremental surge resistance, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.

Technical Context

This TVS diode operates as a voltage-clamping device that remains high-impedance below VWM = 51 V and rapidly transitions to low-impedance conduction above VBR (min 56.7 V) to shunt transient energy. Its glass-passivated junction ensures stable leakage performance and fast response time (<1 ns), while the SMBG package supports thermal dissipation up to 150 °C junction temperature.

The device complies with ANSI/IEEE C62.35 for surge suppression and meets J-STD-020 MSL Level 1 with 260 °C reflow peak. It delivers 100 A non-repetitive forward surge capability (8.3 ms half-sine) and exhibits 100 °C/W typical junction-to-ambient thermal resistance when mounted per recommended pad layout.

Key Specifications

ParameterValue and Actual Design Meaning
VWM51 V - Maximum continuous reverse operating voltage before clamping begins
VBR (min/max)56.7 V / 62.7 V at 1 mA - Ensures reliable turn-on within defined tolerance band under standardized test conditions
VC @ IPPM82.4 V at 7.3 A - Clamping voltage during 10/1000 μs transient defines worst-case stress on protected circuitry
PPPM600 W - Peak pulse power handling capacity determines survivability against common lightning/ESD surges
IFSM100 A - Single half-sine surge rating validates robustness against inductive switch-off events
TJ max+150 °C - Enables operation in under-hood automotive and high-temperature industrial environments
Leakage @ VWM1.0 μA - Ultra-low reverse leakage preserves signal integrity and minimizes standby power loss

Pinout & Package

Package: SMBG (DO-215AA), surface-mount, gull-wing leadform with matte tin-plated terminals; cathode indicated by molded band on case body.

Pin/TerminalCircuit RoleDesign Meaning
AnodeCurrent entry terminal in forward bias; connected to ground or low-side reference in unidirectional protectionProvides return path for clamped surge current; must be routed with low-inductance connection to minimize VL = L·di/dt overshoot
CathodeCurrent exit terminal in forward bias; marked by band; connects to protected lineDirectly interfaces with vulnerable IC input/output; polarity-sensitive installation required to ensure correct clamping direction

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per stress test plan
Glass passivated junctionEnhances long-term stability of VBR and leakage under humidity and thermal aging conditions
600 W peak pulse power (10/1000 μs)Supports IEC 61000-4-5 Level 3 (1 kV line-to-line, 2 kV line-to-ground) surge immunity compliance
MSL Level 1, 260 °C peak reflowEnables single-pass lead-free reflow without moisture-induced damage or delamination
Low profile SMBG package0.235–0.255 inch length enables compact PCB layout in space-constrained modules like ADAS sensors

Applications

Automotive Sensor ProtectionIndustrial PLC I/O Protection

Use Scenario: Protecting CAN/LIN transceiver inputs and analog sensor outputs (e.g., pressure, temperature) from load dump and ISO 7637-2 pulses.

IC Role / Device Role: Unidirectional clamping TVS placed between signal line and chassis ground.

Use Value: Limits transient voltage to ≤82.4 V, preventing latch-up or gate oxide damage in 5 V or 12 V interface ICs.

Use Scenario: Safeguarding digital input modules in programmable logic controllers exposed to inductive switching noise from solenoids and contactors.

IC Role / Device Role: Standoff protection element on 24 V DC input channels prior to optocoupler or Schmitt trigger input stage.

Use Value: Absorbs 600 W surges without degradation, maintaining <1.0 μA leakage to avoid false triggering in high-impedance sensing circuits.

Telecom Line InterfaceConsumer Power Adapter ESD Protection

Use Scenario: Secondary-side transient suppression on Ethernet PHY power rails and data lines in PoE-powered equipment.

IC Role / Device Role: Localized clamping device downstream of primary surge arresters to handle residual fast transients.

Use Value: Fast <1 ns response captures sub-microsecond ESD events missed by slower MOV-based front-end protection.

Use Scenario: Input-stage protection for USB-C PD controller ICs and AC-DC adapter feedback loops against user-handling ESD.

IC Role / Device Role: Unidirectional TVS on 5–20 V VBUS lines and CC detection pins.

Use Value: 51 V VWM allows safe operation across full USB PD voltage range while clamping to 82.4 V to protect 20 V-rated MOSFETs and regulators.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ51A-E3/5BSame VWM/VC, but SMB (DO-214AA) package; 10% higher RθJA (110 °C/W)Lower power density; less suitable for high-temperature ambient or high-duty-cycle surge environmentsSelect SMBG51AHE3/5B when AEC-Q101 qualification and lower thermal resistance are required.
1.5SMC51ASame electrical specs, but larger SMC (DO-214AB) package; 2× footprint area; higher IPPM (8.5 A)Higher mechanical robustness but incompatible with fine-pitch SMT lines and dense layoutsChoose SMBG51AHE3/5B where board space is constrained and automotive qualification is mandatory.

Compared with SMBJ51A-E3/5B and 1.5SMC51A, the SMBG51AHE3/5B offers superior thermal performance (RθJA = 100 °C/W), AEC-Q101 certification, and optimized footprint for automated placement - making it the preferred choice for automotive and high-reliability industrial designs where size, qualification, and thermal margin are jointly critical.

Availability

SMBG51AHE3/5B is available at Aetrix Electronics and suitable for automotive sensor modules, industrial PLC I/O cards, telecom line interface boards, and consumer power adapter designs requiring stable component supply and long-term lifecycle support.

Supply support for SMBG51AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, precision, and application-specific optimization.

The SMBG series was developed to deliver AEC-Q101-qualified transient protection in a low-profile, high-power-density package for next-generation automotive and industrial electronics demanding both miniaturization and ruggedness.

FAQ

What is the clamping voltage of SMBG51AHE3/5B at its rated peak pulse current?

The SMBG51AHE3/5B has a maximum clamping voltage (VC) of 82.4 V at 7.3 A peak pulse current (IPPM) under 10/1000 μs waveform conditions. This value defines the upper voltage limit imposed on protected circuitry during surge events and is measured with the device mounted on 0.2" × 0.2" copper pads per Vishay's standard test layout. The SMBG51AHE3/5B maintains this clamping performance across its specified operating temperature range.

Is SMBG51AHE3/5B suitable for automotive applications?

Yes, SMBG51AHE3/5B is AEC-Q101 qualified and explicitly rated for automotive use. Its construction includes glass-passivated junction, matte tin-plated leads compliant with J-STD-002, and MSL Level 1 moisture sensitivity rating for lead-free reflow. The SMBG51AHE3/5B is commonly deployed in ADAS sensors, body control modules, and infotainment interfaces where transient immunity to load dump and ISO 7637-2 pulses is required.

What does the 'HE3' suffix indicate in SMBG51AHE3/5B?

The 'HE3' suffix in SMBG51AHE3/5B denotes RoHS-compliant, AEC-Q101-qualified industrial grade packaging - specifically indicating halogen-free molding compound, matte tin plating, and full qualification per the AEC stress test plan. The '5B' denotes 13-inch tape-and-reel packaging with 3200 units per reel, optimized for high-volume SMT assembly lines.

How does SMBG51AHE3/5B differ from bidirectional TVS diodes like SMBG51CA?

The SMBG51AHE3/5B is unidirectional and features polarity-sensitive operation with cathode band marking, enabling asymmetric clamping only in reverse bias. In contrast, SMBG51CA is bidirectional and provides symmetrical clamping in both directions - suitable for AC-coupled or floating signal lines. The SMBG51AHE3/5B offers lower leakage (<1.0 μA) and higher IFSM (100 A) than its bidirectional counterpart, making it preferable for DC power rail and grounded-signal protection.

What is the thermal resistance of SMBG51AHE3/5B, and how does it affect layout design?

The SMBG51AHE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain TJ ≤ 150 °C under repetitive surge conditions, PCB layout must provide adequate copper area and thermal vias. Reducing pad size or omitting thermal relief increases RθJA, risking premature thermal failure - so the SMBG51AHE3/5B requires strict adherence to Vishay's recommended footprint.

SMBG51AHE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-215AA, SMB Gull Wing
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
51V
Voltage - Breakdown (Min):
56.7V
Voltage - Clamping (Max) @ Ipp:
82.4V
Current - Peak Pulse (10/1000µs):
7.3A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBG)

SMBG51AHE3/5B FAQ

1.How can I place an order for SMBG51AHE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBG51AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBG51AHE3/5B reliable?

The price and inventory of SMBG51AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG51AHE3/5B is usually 5 days.

3.What payment methods are accepted for SMBG51AHE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG51AHE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBG51AHE3/5B?

SMBG51AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBG51AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBG51AHE3/5B?

For technical support, including SMBG51AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG51AHE3/5B requirements.

6.How does Aetrix verify that SMBG51AHE3/5B is sourced from the original manufacturer or authorized distributors?

All SMBG51AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG51AHE3/5B meets industry standards.

7.What is the process for return or replacement of SMBG51AHE3/5B?

All SMBG51AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG51AHE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBG51AHE3/5B part is unused and in its original packaging.

Return procedure for SMBG51AHE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBG51AHE3/5B Tags

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  • SMBG51AHE3/5B PDF
  • SMBG51AHE3/5B Datasheet
  • SMBG51AHE3/5B Specifications
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  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBG51AHE3/5B
  • Buy SMBG51AHE3/5B
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