Vishay General Semiconductor - Diodes Division SMBG51CAHE3/52
- Part No.:
- SMBG51CAHE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG51CAHE3/52.pdf
- Description:
- TVS DIODE 51VWM 82.4VC DO215AA
- Quantity:
- Payment:

- Shipping:

Inventory:2,538
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBG51CAHE3/52 from Vishay General Semiconductor is a bidirectional transient voltage suppressor (TVS) diode in SMBG (DO-215AA) package, designed for clamping voltage transients on signal or power lines. It features 51 V stand-off voltage (VWM), 6.4–7.25 V breakdown range (VBR), 600 W peak pulse power (10/1000 µs), <1.0 µA reverse leakage at VWM, and 82.4 V maximum clamping voltage (VC) at rated surge current - deployed in automotive sensor protection and industrial I/O interfaces.
For engineers reviewing the SMBG51CAHE3/52 datasheet, SMBG51CAHE3/52 pinout, SMBG51CAHE3/52 application, or SMBG51CAHE3/52 equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification, 150 °C junction temperature rating, low incremental surge resistance, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This device operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (<1.0 µA leakage at 51 V), but triggers into low-impedance conduction when transient voltage exceeds its breakdown threshold (6.4–7.25 V). Its bidirectional symmetry enables suppression of both positive and negative polarity surges without polarity sensitivity.
Constructed with glass-passivated silicon junction and housed in an MSL Level 1 compliant SMBG package, SMBG51CAHE3/52 delivers fast response time (<1 ns), low thermal resistance (RθJL = 20 °C/W), and robust surge handling (100 A IFSM for unidirectional variants; bidirectional operation excludes IFSM rating per spec).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51 V - Maximum continuous reverse operating voltage before clamping begins; defines safe operating window for protected circuitry. |
| VBR min/max | 6.4 V / 7.25 V at 1 mA - Confirmed breakdown voltage range ensures reliable turn-on during ESD or lightning-induced transients. |
| VC @ IPPM | 82.4 V at rated surge current - Clamping voltage limits stress on downstream ICs such as CAN transceivers or microcontrollers. |
| PPPM | 600 W (10/1000 µs waveform) - Peak surge power handling capacity suitable for IEC 61000-4-5 Level 3/4 compliance testing. |
| ID @ VWM | <1.0 µA - Ultra-low leakage preserves signal integrity and battery life in always-on sensor nodes. |
| TJ max | +150 °C - Enables deployment in under-hood automotive environments and high-temperature industrial enclosures. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD performance per JESD22 standards. |
Pinout & Package
Package: SMBG (DO-215AA), surface-mount, bidirectional configuration with no polarity marking; matte tin-plated leads, RoHS-compliant, MSL Level 1, LF peak reflow 260 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry (negative polarity) | One terminal of symmetrical PN junction; conducts during negative-going surges to clamp voltage below -VC. |
| Cathode | Transient current entry (positive polarity) | Other terminal of symmetrical PN junction; conducts during positive-going surges to clamp voltage above +VC. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or differential signal lines (e.g., RS-485, CAN FD) without external polarity management. |
| 600 W peak pulse power | Supports IEC 61000-4-5 2 Ω/42 Ω coupling network testing up to 1 kV open-circuit voltage with margin. |
| Glass passivated junction | Ensures stable VBR and low leakage over lifetime, even under humidity and thermal stress in automotive underhood use. |
| AEC-Q101 qualification | Validates suitability for automotive powertrain, body control, and ADAS modules requiring zero-failure field reliability. |
| Low profile SMBG package | 0.235" × 0.130" footprint with 0.030" height enables dense PCB layouts while maintaining thermal performance via 5.0 mm × 5.0 mm pad design. |
Applications
| Automotive Sensor Protection | Industrial I/O Interface |
|---|---|
Use Scenario: Protecting LIN bus sensors and ABS wheel speed sensors from load dump and inductive switching transients in 12 V vehicle systems. IC Role / Device Role / Timing Role: Shunt TVS element placed across sensor supply line or signal pair to divert surge energy to ground before reaching ASIC or MCU input pins. Use Value: Prevents latch-up or permanent damage to automotive-grade microcontrollers by limiting transient voltage to ≤82.4 V during 10/1000 µs surges up to 600 W. | Use Scenario: Safeguarding PLC analog input channels (4–20 mA, 0–10 V) against field wiring faults and electrostatic discharge in factory automation cabinets. IC Role / Device Role / Timing Role: Bidirectional voltage clamp mounted at connector interface to absorb ±2 kV contact ESD (IEC 61000-4-2) and 1 kV surge (IEC 61000-4-5). Use Value: Maintains signal accuracy by adding <1.0 µA leakage at 51 V stand-off, avoiding DC offset errors in precision measurement circuits. |
| Telecom Line Protection | Consumer USB Port Protection |
Use Scenario: Shielding Ethernet PHY magnetics and PoE injectors from lightning-induced surges on outdoor telecom links. IC Role / Device Role / Timing Role: Primary-level TVS placed before common-mode chokes to clamp differential and common-mode transients simultaneously. Use Value: Withstands repetitive 600 W pulses at 0.01% duty cycle, enabling long-term reliability in unattended telecom infrastructure. | Use Scenario: Hardening USB 2.0 data lines (D+/D−) against human-body-model ESD events during hot-plug insertion in portable devices. IC Role / Device Role / Timing Role: Low-capacitance bidirectional TVS placed directly at USB connector to suppress ±8 kV contact ESD without distorting 480 Mbps signaling. Use Value: Junction capacitance <100 pF (typ.) at 0 V bias ensures minimal signal rise-time degradation on high-speed differential pairs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ51CA | Same VWM (51 V), identical SMB package, but lower PPPM = 600 W (same rating), non-AEC-Q101 qualified. | Lacks automotive qualification; suitable for industrial/commercial only where AEC-Q101 is not mandated. | Select SMBJ51CA only if automotive reliability validation is unnecessary and cost optimization is prioritized. |
| SMCJ51CA | Higher PPPM = 1500 W, larger SMC (DO-214AB) package, same VWM/VC specs, AEC-Q101 qualified. | Requires larger PCB area and different pad layout; preferred where higher surge margin or legacy SMC footprint exists. | Choose SMCJ51CA when system-level surge test requirements exceed 600 W or existing board uses SMC footprint. |
Compared with SMBJ51CA and SMCJ51CA, SMBG51CAHE3/52 uniquely balances AEC-Q101 compliance, compact SMBG footprint, and 600 W surge capability - making it optimal for space-constrained automotive modules needing validated reliability without layout redesign.
Availability
SMBG51CAHE3/52 is available at Aetrix Electronics and suitable for automotive sensor protection, industrial I/O interface hardening, and telecom line surge suppression requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SMBG51CAHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBG series is engineered for high-reliability transient suppression in automotive, industrial, and telecom systems - delivering AEC-Q101-qualified, low-profile TVS solutions with precise clamping and robust surge endurance.
FAQ
What is the breakdown voltage range for SMBG51CAHE3/52?
The SMBG51CAHE3/52 has a minimum breakdown voltage (VBR) of 6.4 V and a maximum of 7.25 V at 1 mA test current, as specified in the Vishay datasheet revision 09-Jan-2024. This narrow VBR window ensures consistent turn-on behavior across production lots and supports predictable clamping performance in safety-critical designs using SMBG51CAHE3/52.
Is SMBG51CAHE3/52 suitable for automotive applications?
Yes, SMBG51CAHE3/52 is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood environments. Its 150 °C maximum junction temperature, glass-passivated junction, and MSL Level 1 reflow compatibility make SMBG51CAHE3/52 appropriate for engine control units, body electronics, and ADAS sensor interfaces where field reliability is mandatory.
Does SMBG51CAHE3/52 have polarity markings?
No, SMBG51CAHE3/52 is a bidirectional TVS diode and carries no cathode band or polarity marking. Its symmetrical construction allows installation in either orientation across differential or AC-coupled lines - simplifying assembly and eliminating risk of reverse placement during automated SMT processes involving SMBG51CAHE3/52.
What is the maximum clamping voltage of SMBG51CAHE3/52 at rated surge current?
The SMBG51CAHE3/52 exhibits a maximum clamping voltage (VC) of 82.4 V at its rated peak pulse current (IPPM), measured under the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is critical for ensuring downstream components like CAN transceivers remain within absolute maximum ratings when using SMBG51CAHE3/52.
How does the SMBG package differ from SMB in terms of thermal performance?
The SMBG (DO-215AA) package used by SMBG51CAHE3/52 features a gull-wing leadform optimized for automated placement and improved thermal conduction versus standard SMB (DO-214AA). With typical junction-to-lead thermal resistance (RθJL) of 20 °C/W - lower than SMB's ~25 °C/W - SMBG51CAHE3/52 achieves better heat dissipation during repetitive surge events, supporting sustained reliability in high-duty-cycle industrial applications.
SMBG51CAHE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 82.4V
- Current - Peak Pulse (10/1000µs):
- 7.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG51CAHE3/52 FAQ
1.How can I place an order for SMBG51CAHE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG51CAHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG51CAHE3/52 reliable?
The price and inventory of SMBG51CAHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG51CAHE3/52 is usually 5 days.
3.What payment methods are accepted for SMBG51CAHE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG51CAHE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG51CAHE3/52?
SMBG51CAHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG51CAHE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG51CAHE3/52?
For technical support, including SMBG51CAHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG51CAHE3/52 requirements.
6.How does Aetrix verify that SMBG51CAHE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBG51CAHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG51CAHE3/52 meets industry standards.
7.What is the process for return or replacement of SMBG51CAHE3/52?
All SMBG51CAHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBG51CAHE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG51CAHE3/52 part is unused and in its original packaging.
Return procedure for SMBG51CAHE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG51CAHE3/52 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

