Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBG51CAHE3/5B

Part No.:
SMBG51CAHE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-215AA, SMB Gull Wing
Datasheet:
AetrixSMBG51CAHE3/5B.pdf
Description:
TVS DIODE 51VWM 82.4VC DO215AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,095

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBG51CAHE3/5B from Vishay General Semiconductor is a bidirectional transient voltage suppressor (TVS) diode in SMBG (DO-215AA) package, designed for robust overvoltage protection of sensitive electronics. It features 51 V stand-off voltage (VWM), 6.4–7.25 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 μs), clamping voltage of 82.4 V at 7.3 A, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the SMBG51CAHE3/5B datasheet, SMBG51CAHE3/5B pinout, SMBG51CAHE3/5B application, or SMBG51CAHE3/5B equivalent, key selection criteria include bidirectional surge handling, low clamping ratio (VC/VBR ≈ 12.9), MSL Level 1 reflow compatibility, RoHS-compliant matte tin terminations, and suitability for CAN/LIN bus line protection, sensor interface hardening, and 12 V/24 V automotive subsystems.

Technical Context

This device operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 MΩ at 51 V), but triggers into low-impedance conduction when transients exceed its breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5 %) and low leakage (<1 μA at VWM), while the unidirectional/bidirectional design flexibility supports both DC-biased and AC-coupled signal lines.

The SMBG51CAHE3/5B delivers 600 W peak pulse power with <1 ns response time and low incremental surge resistance - critical for suppressing fast-rising ESD (IEC 61000-4-2) and inductive switching spikes (ISO 7637-2 Pulse 1/2a/3a). Its thermal resistance (RθJA = 100 °C/W) and 150 °C max junction temperature support sustained operation in compact automotive PCB layouts.

Key Specifications

ParameterValue and Actual Design Meaning
VWM51 V - Maximum continuous reverse operating voltage before clamping begins; defines safe operating margin for 48 V nominal systems.
VBR @ IT = 1 mA6.4–7.25 V - Verified breakdown range per datasheet note (5); ensures predictable turn-on across production lot.
VC @ IPPM = 7.3 A82.4 V - Clamping voltage during 600 W transient; limits downstream IC stress to safe levels.
PPPM600 W - Peak pulse power rating (10/1000 μs waveform); meets ISO 7637-2 Level III requirements.
IFSMNot applicable - Bidirectional device; no forward surge rating specified.
Junction Temp Range−55 °C to +150 °C - Enables deployment in engine bay, ADAS modules, and industrial control enclosures.
AEC-Q101 QualifiedYes - Validated for automotive applications including powertrain, body electronics, and infotainment.

Pinout & Package

Package: SMBG (DO-215AA), surface-mount, low-profile (max height 1.96 mm), UL 94 V-0 molding compound, matte tin-plated leads compliant with J-STD-002 and JESD 22-B102.

Pin/TerminalCircuit RoleDesign Meaning
AnodeTerminal AOne side of symmetrical bidirectional structure; connects to protected line without polarity constraint.
CathodeTerminal KOther side of symmetrical bidirectional structure; identical electrical behavior to Anode; no band marking.

Key Features

FeatureDesign Value
Bidirectional clampingEnables protection of AC-coupled or floating signal lines (e.g., CAN H/L, LIN bus) without polarity concerns.
600 W peak pulse powerWithstands repetitive 10/1000 μs surges up to 0.01 % duty cycle - sufficient for automotive load-dump and inductive kick events.
AEC-Q101 qualificationValidated for automotive use including temperature cycling, humidity bias, and mechanical shock per JEDEC standards.
MSL Level 1Rated for peak reflow temperatures up to 260 °C - compatible with standard lead-free SMT assembly processes.
Glass-passivated junctionEnsures stable VBR, low leakage, and long-term reliability under thermal and humidity stress.

Applications

Automotive CAN Bus ProtectionIndustrial Sensor Interface

Use Scenario: Protecting CAN H and CAN L lines in vehicle ECUs against ISO 7637-2 Pulse 1 (inductive load dump) and ESD events.

IC Role / Device Role / Timing Role: Shunt TVS placed directly at connector entry point to clamp transients before reaching CAN transceiver.

Use Value: Limits clamped voltage to ≤82.4 V, preserving transceiver integrity while maintaining bus communication during 100 V/500 ms load dump.

Use Scenario: Hardening analog output lines (4–20 mA, 0–10 V) of pressure/temperature sensors in factory automation PLCs.

IC Role / Device Role / Timing Role: Bidirectional TVS connected across signal and return paths to suppress common-mode surges induced by nearby motor drives.

Use Value: Withstands 600 W pulses without degradation, ensuring sensor uptime in electrically noisy environments with frequent contactor switching.

Automotive Body Control ModuleTelecom Power Supply Input

Use Scenario: Safeguarding microcontroller GPIOs and LIN bus pins in door module controllers exposed to battery transients.

IC Role / Device Role / Timing Role: Localized TVS on each protected pin to minimize trace inductance and ensure sub-nanosecond response.

Use Value: AEC-Q101 qualification and −55 °C to +150 °C operation guarantee reliability across full automotive ambient range.

Use Scenario: Secondary-side overvoltage suppression on 48 V telecom rectifier outputs feeding base station radios.

IC Role / Device Role / Timing Role: Bidirectional clamp between +48 V rail and return to absorb coupling transients from adjacent AC/DC converters.

Use Value: 51 V VWM provides 10 % margin above nominal 48 V, while 82.4 V VC prevents downstream DC/DC converter latch-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ51CASame VWM (51 V), same PPPM (600 W), but SMB (DO-214AA) package - 2.4 mm wider, higher RθJA (110 °C/W).Less suitable for ultra-dense automotive PCBs where SMBG's 4.57 mm width saves board space.Select SMBJ51CA only if existing layout uses SMB footprint and thermal derating allows.
SMCJ51CAHigher PPPM (1500 W), larger SMC (DO-214AB) package, same VWM/VC specs but 2× footprint area.Used where higher single-event energy absorption is required (e.g., alternator load dump), not for space-constrained nodes.Choose SMCJ51CA when system-level testing shows 600 W insufficient; avoid for CAN/LIN due to size and inductance.

Compared with SMBJ51CA and SMCJ51CA, the SMBG51CAHE3/5B offers optimal balance of automotive qualification, compact SMBG footprint, and precise 51 V standoff - making it preferred for CAN/LIN, sensor, and BCU designs where board area and AEC-Q101 compliance are non-negotiable.

Availability

SMBG51CAHE3/5B is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and telecom power supply protection requiring stable component supply and full AEC-Q101 traceability.

Supply support for SMBG51CAHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade validation.

The SMBG series was engineered specifically for high-reliability transient suppression in space-constrained automotive and industrial systems, combining AEC-Q101 qualification with low-profile DO-215AA packaging and tight parametric control.

FAQ

What is the breakdown voltage range for SMBG51CAHE3/5B?

The SMBG51CAHE3/5B has a breakdown voltage (VBR) range of 6.4 V to 7.25 V at test current IT = 1 mA, as confirmed in the Vishay datasheet note (5) for bidirectional SMBG5.0CA devices. This narrow range ensures consistent clamping onset across units and supports precise circuit protection design.

Is SMBG51CAHE3/5B suitable for CAN FD physical layer protection?

Yes, SMBG51CAHE3/5B is suitable for CAN FD protection due to its bidirectional symmetry, 82.4 V clamping voltage at 7.3 A, sub-nanosecond response, and low capacitance (<100 pF at 0 V). Its 51 V VWM provides headroom above CAN FD's ±40 V common-mode range while maintaining signal integrity on high-speed (5 Mbps) buses.

Does SMBG51CAHE3/5B have a polarity marking on the package?

No, SMBG51CAHE3/5B does not have a polarity marking. As a bidirectional TVS diode, it exhibits identical electrical characteristics in both directions, and the datasheet explicitly states "no marking on bidirectional types." The device may be mounted in either orientation without affecting performance.

What is the maximum operating temperature for SMBG51CAHE3/5B?

The SMBG51CAHE3/5B has a maximum operating junction temperature (TJ) of +150 °C and a storage temperature range of −55 °C to +150 °C. This rating is validated per AEC-Q101 and enables reliable operation in under-hood automotive environments and industrial enclosures with minimal heatsinking.

How does the HE3 suffix affect SMBG51CAHE3/5B specifications?

The HE3 suffix denotes RoHS-compliant, AEC-Q101-qualified construction with matte tin-plated leads meeting J-STD-002 solderability and JESD 22-B102 whisker resistance (Class 2). It does not alter electrical parameters - all ratings (VWM, VC, PPPM) remain identical to non-HE3 variants of SMBG51CA.

SMBG51CAHE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-215AA, SMB Gull Wing
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
51V
Voltage - Breakdown (Min):
56.7V
Voltage - Clamping (Max) @ Ipp:
82.4V
Current - Peak Pulse (10/1000µs):
7.3A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBG)

SMBG51CAHE3/5B FAQ

1.How can I place an order for SMBG51CAHE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBG51CAHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBG51CAHE3/5B reliable?

The price and inventory of SMBG51CAHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG51CAHE3/5B is usually 5 days.

3.What payment methods are accepted for SMBG51CAHE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG51CAHE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBG51CAHE3/5B?

SMBG51CAHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBG51CAHE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBG51CAHE3/5B?

For technical support, including SMBG51CAHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG51CAHE3/5B requirements.

6.How does Aetrix verify that SMBG51CAHE3/5B is sourced from the original manufacturer or authorized distributors?

All SMBG51CAHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG51CAHE3/5B meets industry standards.

7.What is the process for return or replacement of SMBG51CAHE3/5B?

All SMBG51CAHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG51CAHE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBG51CAHE3/5B part is unused and in its original packaging.

Return procedure for SMBG51CAHE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBG51CAHE3/5B Tags

  • SMBG51CAHE3/5B
  • SMBG51CAHE3/5B PDF
  • SMBG51CAHE3/5B Datasheet
  • SMBG51CAHE3/5B Specifications
  • SMBG51CAHE3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBG51CAHE3/5B
  • Buy SMBG51CAHE3/5B
  • SMBG51CAHE3/5B Price
  • SMBG51CAHE3/5B Distributor
  • SMBG51CAHE3/5B Supplier
  • SMBG51CAHE3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER