Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBG51HE3/5B

Part No.:
SMBG51HE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-215AA, SMB Gull Wing
Datasheet:
AetrixSMBG51HE3/5B.pdf
Description:
TVS DIODE 51VWM 91.1VC DO215AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,627

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBG51HE3/5B from Vishay General Semiconductor is a uni-directional transient voltage suppressor (TVS) diode in DO-215AA (SMBG) package, designed for robust overvoltage protection of sensitive electronics. It features a 51 V stand-off voltage (VWM), 56.7–62.7 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 µs), and clamps transients to ≤82.4 V at 7.3 A. It is AEC-Q101 qualified and used in automotive power line and sensor interface protection.

For engineers reviewing the SMBG51HE3/5B datasheet, SMBG51HE3/5B pinout, SMBG51HE3/5B application, or SMBG51HE3/5B equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, DO-215AA mechanical dimensions, clamping behavior under surge, and direct alternatives with documented parameter divergence - all aligned to Vishay's official 88456 specification sheet.

Technical Context

This TVS diode operates as a uni-directional avalanche clamp, triggered when reverse voltage exceeds its VBR range (56.7–62.7 V). Its low incremental surge resistance ensures stable clamping during fast transients, and its glass-passivated junction enables reliable operation up to 150 °C junction temperature.

The device meets MSL Level 1 per J-STD-020 with 260 °C lead-free reflow compatibility, and its matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability standards. The HE3 suffix confirms AEC-Q101 qualification and JESD 201 Class 2 whisker resistance.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 51 V - Maximum continuous reverse operating voltage before clamping initiates
VBR @ IT = 1 mA 56.7–62.7 V - Breakdown threshold range ensuring consistent surge triggering across production lot
VC @ IPPM = 7.3 A ≤82.4 V - Clamped voltage during 600 W 10/1000 µs surge, defining maximum stress on protected IC
PPPM 600 W - Peak pulse power handling capability under standardized transient waveform
IFSM 100 A - Single half-sine surge current rating (8.3 ms), critical for load-dump immunity
Junction Temp Range −55 °C to +150 °C - Enables deployment in under-hood automotive and industrial environments
Package DO-215AA (SMBG) - Surface-mount outline with 0.235–0.255 inch body length, optimized for automated placement

Pinout & Package

DO-215AA (SMBG) package: surface-mount gull-wing configuration with cathode band marking on one end; terminals are matte tin-plated for RoHS-compliant, high-reliability soldering.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to lower-potential side (e.g., ground or return path) in uni-directional protection topology
Cathode Reverse-biased clamping terminal Connected to protected line (e.g., 12 V rail or signal input); marked by band; conducts avalanche current during overvoltage

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JEDEC standard
600 W peak pulse power (10/1000 µs) Withstands ISO 7637-2 Pulse 1, 2a, 3a/b, and SAE J1113-11 load-dump surges without degradation
Glass-passivated junction Ensures stable leakage current (<1 µA at VWM) and long-term parametric stability under thermal stress
MSL Level 1, 260 °C peak reflow Supports single-pass lead-free assembly without popcorn cracking or delamination risk
Low clamping ratio (VC/VBR ≈ 1.33) Minimizes overvoltage overshoot during fast transients, protecting downstream MOSFET gates and MCU I/O

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs against load dump and inductive switching spikes in passenger vehicles.

IC Role / Device Role / Timing Role: Uni-directional TVS placed between power rail and chassis ground to clamp transients above 51 V.

Use Value: Limits peak voltage to ≤82.4 V during 600 W surges, preventing damage to 60 V-rated DC-DC converters and CAN transceivers.

Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) connected to PLC inputs in factory automation.

IC Role / Device Role / Timing Role: Line-to-ground TVS on 24 V supply or signal lines to absorb EFT bursts and ESD events.

Use Value: Sub-100 ns response time and ≤1 µA leakage at 51 V ensure minimal signal distortion and no DC loading on precision sensors.

Telecom DC Power Input Protection Consumer Device USB/Power Port Protection

Use Scenario: Securing −48 V telecom rectifier outputs against lightning-induced surges and hot-swap transients.

IC Role / Device Role / Timing Role: Reverse-connected SMBG51HE3/5B (cathode to −48 V, anode to ground) for negative-rail clamping.

Use Value: 100 A IFSM rating supports repeated 8.3 ms surges common in central office power systems.

Use Scenario: Overvoltage hardening of 5 V USB-C power delivery paths in smart home hubs and docking stations.

IC Role / Device Role / Timing Role: Standoff-limited TVS on VBUS line to block >51 V faults while passing normal 5 V operation.

Use Value: DO-215AA footprint allows compact layout near connectors; AEC-Q101 qualification adds margin for field-reliability-critical consumer designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ51A-E3/5B Same VWM (51 V) and VC (82.4 V), but rated for 600 W with 10/1000 µs waveform and lacks AEC-Q101 qualification Commercial-grade only; not validated for automotive temperature cycling or humidity testing Select SMBJ51A-E3/5B only for cost-sensitive non-automotive applications where AEC-Q101 is not mandated
SMCJ51A-13-F Higher package thermal mass (DO-214AB), 1500 W PPPM, same VWM/VC, but larger footprint and no AEC-Q101 certification Used where higher surge energy absorption is required, e.g., industrial motor drives with repetitive switching noise Choose SMCJ51A-13-F when system-level surge testing exceeds 600 W or board space permits larger DO-214AB outline

Compared with SMBJ51A-E3/5B and SMCJ51A-13-F, the SMBG51HE3/5B uniquely combines AEC-Q101 qualification, DO-215AA compactness, and 600 W clamping performance - making it the only option qualified for automotive front-end power protection without footprint or reliability trade-offs.

Availability

SMBG51HE3/5B is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom DC power inputs requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SMBG51HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade validation.

The SMBG series was developed specifically for high-reliability surface-mount transient suppression in space-constrained automotive and industrial systems, prioritizing AEC-Q101 compliance, low-profile packaging, and repeatable clamping performance.

FAQ

What is the clamping voltage of SMBG51HE3/5B at its rated peak pulse current?

The SMBG51HE3/5B clamps to a maximum of 82.4 V when subjected to its peak pulse current of 7.3 A (10/1000 µs waveform). This value is measured per Vishay's Document Number 88456 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBG51HE3/5B maintains this clamping performance across its qualified operating temperature range.

Is SMBG51HE3/5B suitable for automotive applications?

Yes, SMBG51HE3/5B is explicitly AEC-Q101 qualified per Vishay's documentation, with validation covering temperature cycling, high-temperature reverse bias, and ESD testing. Its DO-215AA package, 150 °C max junction temperature, and 100 A IFSM rating make it suitable for under-hood and body-control module applications. The SMBG51HE3/5B meets automotive OEM requirements for transient immunity and long-term reliability.

What does the "HE3" suffix indicate in SMBG51HE3/5B?

The "HE3" suffix denotes two key attributes: "H" indicates AEC-Q101 qualification, and "E3" specifies RoHS-compliant, matte tin-plated terminations meeting J-STD-002 solderability and JESD 201 Class 2 whisker resistance. This distinguishes SMBG51HE3/5B from commercial-grade variants like SMBG51A-E3/5B, which lack automotive qualification. The SMBG51HE3/5B is therefore certified for high-reliability deployment.

How does SMBG51HE3/5B differ from SMBJ51A-E3/5B?

SMBG51HE3/5B and SMBJ51A-E3/5B share identical electrical specs (VWM = 51 V, VC = 82.4 V, PPPM = 600 W) but differ in qualification and construction: SMBG51HE3/5B is AEC-Q101 qualified and uses a glass-passivated junction, whereas SMBJ51A-E3/5B is commercial-grade only. Both use DO-215AA and DO-214AA packages respectively, but the SMBG51HE3/5B offers superior reliability assurance for automotive use.

What is the maximum operating temperature for SMBG51HE3/5B?

The SMBG51HE3/5B has a maximum junction temperature (TJ) of +150 °C and an operating storage range of −55 °C to +150 °C. This rating is confirmed in Vishay's 88456 datasheet and enables use in engine bay, powertrain, and industrial control environments where ambient temperatures exceed 105 °C. Derating curves in Figure 2 of the SMBG51HE3/5B datasheet guide thermal design above 25 °C ambient.

SMBG51HE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-215AA, SMB Gull Wing
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
51V
Voltage - Breakdown (Min):
56.7V
Voltage - Clamping (Max) @ Ipp:
91.1V
Current - Peak Pulse (10/1000µs):
6.6A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBG)

SMBG51HE3/5B FAQ

1.How can I place an order for SMBG51HE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBG51HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBG51HE3/5B reliable?

The price and inventory of SMBG51HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG51HE3/5B is usually 5 days.

3.What payment methods are accepted for SMBG51HE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG51HE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBG51HE3/5B?

SMBG51HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBG51HE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBG51HE3/5B?

For technical support, including SMBG51HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG51HE3/5B requirements.

6.How does Aetrix verify that SMBG51HE3/5B is sourced from the original manufacturer or authorized distributors?

All SMBG51HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG51HE3/5B meets industry standards.

7.What is the process for return or replacement of SMBG51HE3/5B?

All SMBG51HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG51HE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBG51HE3/5B part is unused and in its original packaging.

Return procedure for SMBG51HE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBG51HE3/5B Tags

  • SMBG51HE3/5B
  • SMBG51HE3/5B PDF
  • SMBG51HE3/5B Datasheet
  • SMBG51HE3/5B Specifications
  • SMBG51HE3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBG51HE3/5B
  • Buy SMBG51HE3/5B
  • SMBG51HE3/5B Price
  • SMBG51HE3/5B Distributor
  • SMBG51HE3/5B Supplier
  • SMBG51HE3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER