Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBG54AHE3/52

Part No.:
SMBG54AHE3/52
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-215AA, SMB Gull Wing
Datasheet:
AetrixSMBG54AHE3/52.pdf
Description:
TVS DIODE 54VWM 87.1VC DO215AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,558

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBG54AHE3/52 from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMBG (DO-215AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 54 V stand-off voltage (VWM), 60.0–66.3 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 µs), clamping voltage of 87.1 V at 6.9 A, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the SMBG54AHE3/52 datasheet, SMBG54AHE3/52 pinout, SMBG54AHE3/52 application, or SMBG54AHE3/52 equivalent, this device is selected for high-energy surge suppression in automotive power nets, industrial sensor interfaces, and DC bus lines where fast response (<1 ns), low clamping ratio, and stable junction temperature up to +150 °C are critical design requirements.

Technical Context

This TVS operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds VBR, diverting transient current away from protected circuitry. Its glass-passivated junction ensures stable leakage (<1.0 µA at 54 V) and repeatable breakdown behavior across temperature (-55 °C to +150 °C).

The device uses a low-inductance SMBG (DO-215AA) surface-mount package with matte tin-plated leads, optimized for automated placement and compliant with J-STD-002 solderability and JESD201 Class 2 whisker resistance. Thermal resistance is 100 °C/W (junction-to-ambient) on 5.0 mm × 5.0 mm copper pads.

Key Specifications

ParameterValue and Actual Design Meaning
VWM54 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working margin.
VBR (min/max)60.0 V / 66.3 V at 1 mA - Confirmed avalanche onset range; ensures predictable turn-on under transients.
VC @ IPPM87.1 V at 6.9 A - Clamped voltage during 600 W surge; determines maximum stress on downstream ICs.
PPPM600 W (10/1000 µs) - Peak surge energy handling capacity; supports ISO 7637-2 Pulse 1/2a/5a compliance.
IFSM100 A (8.3 ms half-sine) - Surge current rating for unidirectional devices; validates robustness against load dump events.
TJ max+150 °C - Maximum junction temperature; enables operation in under-hood automotive environments.
AEC-Q101Qualified - Validated for automotive electronic systems per stress test requirements including HTGB, HTRB, and TCT.

Pinout & Package

Package: SMBG (DO-215AA), surface-mount, low-profile case with cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.10 mm (L × W × H); 0.2" × 0.2" copper pad layout recommended per datasheet fig. 2.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminalConnected to ground or low-impedance return path; carries surge current during clamping.
CathodeReverse-biased clamping terminalConnected to protected line (e.g., 12 V rail); polarity band identifies this end per JEDEC DO-215AA standard.

Key Features

FeatureDesign Value
600 W peak pulse powerEnables suppression of high-energy transients like ISO 16750-2 load dump spikes without degradation.
AEC-Q101 qualificationValidates reliability for automotive powertrain, body control, and ADAS modules requiring long-term field stability.
Glass-passivated junctionEnsures consistent VBR tolerance and low leakage (<1 µA) across temperature and lifetime.
MSL Level 1 (260 °C)Supports lead-free reflow assembly without moisture-induced popcorning or delamination.
Low clamping ratio (VC/VBR ≈ 1.38)Minimizes overvoltage overshoot during clamping, protecting 60 V-rated MOSFETs and gate drivers.

Applications

Automotive Power Net ProtectionIndustrial Sensor Interface

Use Scenario: Protecting 12 V/24 V power rails in engine control units (ECUs) against load dump and inductive switching transients per ISO 7637-2.

IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between battery feed and primary regulator input.

Use Value: Limits peak voltage to ≤87.1 V during 600 W surges, preventing damage to downstream PMICs and microcontrollers.

Use Scenario: Shielding analog front-end inputs of pressure/temperature sensors in factory automation PLCs from ESD and cable discharge events.

IC Role / Device Role / Timing Role: Point-of-entry protection on signal lines connected to ADC inputs or op-amp buffers.

Use Value: Sub-1 ns response time and <1 µA leakage preserve signal integrity and measurement accuracy in 24-bit precision systems.

DC Motor Drive BusTelecom Power Supply Input

Use Scenario: Safeguarding H-bridge MOSFET gates and bootstrap circuits in brushed/BLDC motor controllers exposed to back-EMF spikes.

IC Role / Device Role / Timing Role: Clamp mounted directly across motor supply terminals or gate driver supply rails.

Use Value: Withstands repetitive 100 A surge current (8.3 ms) and maintains clamping performance after >1000 surge cycles.

Use Scenario: Input-stage surge protection for 48 V telecom rectifiers and PoE injectors subject to lightning-induced surges per IEC 61000-4-5.

IC Role / Device Role / Timing Role: Primary-level TVS on AC/DC converter input or DC distribution bus before isolation stage.

Use Value: 600 W rating and 150 °C max junction temperature support continuous operation in enclosed, high-ambient telecom cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ54A-E3/52Same VWM (54 V), lower PPPM (600 W → 400 W), higher VC (93.6 V vs. 87.1 V), same SMB package.Less robust for high-energy load dump; suitable only for lower-tier surge immunity requirements.Select SMBG54AHE3/52 when full 600 W capability and tighter clamping are required.
SMCJ54AHE3/52Same VWM and VBR, but SMC (DO-214AB) package - larger footprint, higher thermal mass, RθJA = 35 °C/W vs. 100 °C/W.Better thermal dissipation for sustained surge duty; incompatible with space-constrained SMB layouts.Choose SMBG54AHE3/52 for compact PCBs where SMBG's 4.6 mm × 3.9 mm size is mandatory.

Compared with SMBJ54A-E3/52 and SMCJ54AHE3/52, SMBG54AHE3/52 delivers optimal balance of high surge rating, tight clamping, AEC-Q101 qualification, and minimal board area - making it the preferred choice for next-generation automotive and industrial modules with strict size and reliability constraints.

Availability

SMBG54AHE3/52 is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, DC motor drives, and telecom power supplies requiring stable component supply and long-term lifecycle assurance.

Supply support for SMBG54AHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and automotive-grade qualification.

The SMBG series was developed specifically for high-reliability transient suppression in space-constrained automotive and industrial applications, combining AEC-Q101 validation with industry-standard DO-215AA packaging.

FAQ

What is the clamping voltage of SMBG54AHE3/52 at its rated peak pulse current?

The SMBG54AHE3/52 has a maximum clamping voltage (VC) of 87.1 V at its peak pulse current (IPPM) of 6.9 A, measured under the standardized 10/1000 µs waveform. This value is confirmed in the Vishay datasheet Document Number 88456, Table on page 2. The SMBG54AHE3/52 achieves a clamping ratio of approximately 1.38 relative to its minimum breakdown voltage, supporting reliable protection of 60 V-rated components.

Is SMBG54AHE3/52 qualified for automotive applications?

Yes, SMBG54AHE3/52 is explicitly AEC-Q101 qualified, as stated in the Vishay datasheet revision 09-Jan-2024 (Document Number 88456), section "MECHANICAL DATA" and "RATINGS AND CHARACTERISTICS CURVES". This qualification covers stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling (TCT), confirming suitability for under-hood and chassis-mounted automotive electronics.

What does the 'HE3' suffix indicate in SMBG54AHE3/52?

The 'HE3' suffix in SMBG54AHE3/52 denotes RoHS-compliant construction with AEC-Q101 qualification and matte tin-plated leads meeting J-STD-002 solderability standards. Per Vishay's ordering information table (page 3), 'HE3' distinguishes this variant from industrial-grade 'E3' and halogen-free 'HM3' versions - confirming its automotive-grade reliability and lead-free assembly compatibility.

What is the thermal resistance of SMBG54AHE3/52, and how does it affect layout?

The SMBG54AHE3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as specified in the "THERMAL CHARACTERISTICS" table (page 3). This value requires adherence to the recommended pad layout to avoid thermal runaway during repetitive surges; reducing pad area increases RθJA and de-rates power handling.

Can SMBG54AHE3/52 be used in bidirectional configurations?

No, SMBG54AHE3/52 is a unidirectional TVS diode, indicated by the 'A' (not 'CA') suffix and presence of a cathode band marking. Bidirectional variants use the 'CA' suffix (e.g., SMBG54CA), which exhibit symmetric breakdown in both polarities. Using SMBG54AHE3/52 in reverse-biased AC applications would result in forward conduction and failure; always verify polarity alignment in schematic and layout for SMBG54AHE3/52.

SMBG54AHE3/52 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-215AA, SMB Gull Wing
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
54V
Voltage - Breakdown (Min):
60V
Voltage - Clamping (Max) @ Ipp:
87.1V
Current - Peak Pulse (10/1000µs):
6.9A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBG)

SMBG54AHE3/52 FAQ

1.How can I place an order for SMBG54AHE3/52 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBG54AHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBG54AHE3/52 reliable?

The price and inventory of SMBG54AHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG54AHE3/52 is usually 5 days.

3.What payment methods are accepted for SMBG54AHE3/52?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG54AHE3/52 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBG54AHE3/52?

SMBG54AHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBG54AHE3/52 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBG54AHE3/52?

For technical support, including SMBG54AHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG54AHE3/52 requirements.

6.How does Aetrix verify that SMBG54AHE3/52 is sourced from the original manufacturer or authorized distributors?

All SMBG54AHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG54AHE3/52 meets industry standards.

7.What is the process for return or replacement of SMBG54AHE3/52?

All SMBG54AHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBG54AHE3/52, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBG54AHE3/52 part is unused and in its original packaging.

Return procedure for SMBG54AHE3/52:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBG54AHE3/52 Tags

  • SMBG54AHE3/52
  • SMBG54AHE3/52 PDF
  • SMBG54AHE3/52 Datasheet
  • SMBG54AHE3/52 Specifications
  • SMBG54AHE3/52 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBG54AHE3/52
  • Buy SMBG54AHE3/52
  • SMBG54AHE3/52 Price
  • SMBG54AHE3/52 Distributor
  • SMBG54AHE3/52 Supplier
  • SMBG54AHE3/52 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER