Vishay General Semiconductor - Diodes Division SMBG58AHE3/52
- Part No.:
- SMBG58AHE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG58AHE3/52.pdf
- Description:
- TVS DIODE 58VWM 93.6VC DO215AA
- Quantity:
- Payment:

- Shipping:

Inventory:2,970
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBG58AHE3/52 from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMBG (DO-215AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 58 V stand-off voltage (VWM), 64.4–71.2 V breakdown voltage (VBR) at 1 mA, 93.6 V maximum clamping voltage (VC) at 6.4 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - deployed in automotive ECUs, industrial sensor interfaces, and power supply input stages.
For engineers reviewing the SMBG58AHE3/52 datasheet, SMBG58AHE3/52 pinout, SMBG58AHE3/52 application, or SMBG58AHE3/52 equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (−55 to +150 °C), and package mechanical dimensions per DO-215AA - all critical for ESD/surge co-design and layout validation.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: under normal bias it presents high impedance (<1 μA leakage at 58 V), then rapidly avalanches below 71.2 V to clamp transients. Its glass-passivated junction ensures stable breakdown and low incremental surge resistance, enabling repeatable clamping performance across surge events.
The device is rated for 100 A non-repetitive forward surge current (8.3 ms half-sine), supports automated SMT placement, and meets J-STD-020 MSL Level 1 (peak reflow 260 °C). Its cathode-band polarity marking and matte tin-plated leads comply with JESD 22-B102 solderability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 58 V - maximum continuous reverse operating voltage before conduction begins |
| VBR (min/max) | 64.4 V / 71.2 V at IT = 1 mA - guaranteed avalanche onset range for reliable triggering |
| VC @ IPPM | 93.6 V at 6.4 A - clamped voltage during 600 W transient, defining protected circuit's max stress |
| PPPM | 600 W - peak pulse power handling with 10/1000 μs waveform, duty cycle ≤ 0.01 % |
| IFSM | 100 A - surge current tolerance for 8.3 ms half-sine, critical for load-dump immunity |
| TJ range | −55 °C to +150 °C - full automotive-grade junction temperature operation |
| RθJA | 100 °C/W - thermal resistance from junction to ambient on 5.0 mm × 5.0 mm copper pads |
Pinout & Package
Package: SMBG (DO-215AA), surface-mount, low-profile gull-wing lead frame with cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.10 mm (L × W × H); terminals are matte tin-plated for J-STD-002 compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry (unidirectional) | Connected to lower-potential side of protected line; conducts during reverse transient |
| Cathode | Forward current exit / transient sink | Marked by band; tied to higher-potential rail (e.g., VCC) to shunt surges to ground |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood applications including engine control, body electronics, and ADAS sensors |
| Glass passivated junction | Ensures stable VBR over time and temperature, minimizing parameter drift in harsh environments |
| 600 W peak pulse power | Withstands ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 Level 4 surges without degradation |
| MSL Level 1 rating | Enables single-reflow assembly without moisture sensitivity concerns (peak 260 °C) |
| Low clamping ratio (VC/VBR ≈ 1.39) | Minimizes overvoltage exposure to downstream ICs - e.g., protects 75 V-rated MOSFET gates |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed microcontroller power inputs against load dump and jump-start transients in vehicle body control modules. IC Role / Device Role / Timing Role: Shunt clamping element placed between VBAT and GND, triggered within <1 ns to limit voltage to ≤93.6 V. Use Value: Prevents latch-up or gate oxide rupture in 5 V/3.3 V LDOs and MCU power domains during 120 V/500 ms load dump events. | Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loop) in factory automation pressure transmitters exposed to relay coil flyback. IC Role / Device Role / Timing Role: Bidirectional-capable variant not used; SMBG58AHE3/52 serves unidirectional rail-to-rail clamping on supply side only. Use Value: Limits induced spikes to <94 V, preserving ±15 V op-amp input stage integrity and avoiding ADC saturation or reset. |
| DC-DC Converter Input Stage | Telecom Line Card Surge Protection |
Use Scenario: Front-end protection for 48 V input buck converters in PoE-powered network switches subjected to lightning-induced surges. IC Role / Device Role / Timing Role: Primary transient suppressor upstream of input filter capacitor, absorbing energy before reaching controller IC. Use Value: Clamps 1 kV/0.5 J surges to 93.6 V, reducing required input capacitor derating and enabling smaller magnetics. | Use Scenario: Secondary-level protection on -48 V telecom power feeds entering base station line cards, complementing primary gas discharge tube (GDT) stages. IC Role / Device Role / Timing Role: Fast-response secondary clamp that activates after GDT crowbar, handling residual fast-rising edges. Use Value: Provides sub-100 V clamping with <1 ns response, preventing damage to hot-swap controllers and PMICs rated for 100 V absolute max. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ58A-E3/52 | Same VWM (58 V), identical SMB (DO-214AA) package but 6.5 mm × 3.5 mm footprint; RθJA = 110 °C/W vs. 100 °C/W | Slightly larger pad area required; lower power density than SMBG; less suitable for ultra-dense layouts | Select SMBJ58A-E3/52 only if legacy board uses SMB footprint or when higher surge margin (IPPM = 6.5 A) is prioritized over thermal efficiency |
| SMCJ58AHE3/52 | Same VWM and VC, but SMC (DO-214AB) package: 7.1 mm × 6.2 mm, 1500 W PPPM, RθJA = 50 °C/W | Higher power handling and better thermal dissipation, but requires 3× PCB area and heavier copper | Choose SMCJ58AHE3/52 for high-reliability 24 V/48 V systems where sustained surge repetition or elevated ambient temperatures exceed SMBG limits |
Compared with SMBJ58A-E3/52 and SMCJ58AHE3/52, SMBG58AHE3/52 delivers optimal balance of compact size (4.6 mm × 3.9 mm), automotive qualification, and thermal performance (100 °C/W) - making it preferred for space-constrained, thermally managed automotive and industrial modules requiring AEC-Q101 compliance.
Availability
SMBG58AHE3/52 is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor signal conditioning circuits, and telecom power feed protection requiring stable component supply, AEC-Q101 assurance, and consistent surge immunity performance.
Supply support for SMBG58AHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, automotive qualification, and high-volume manufacturability.
The SMBG series was engineered specifically for surface-mount transient suppression in space-constrained, high-reliability applications - combining AEC-Q101 qualification, low-profile packaging, and precise clamping performance for modern automotive and industrial electronics.
FAQ
What is the maximum clamping voltage of SMBG58AHE3/52 and under what test condition?
The SMBG58AHE3/52 has a maximum clamping voltage (VC) of 93.6 V, measured at a peak pulse current (IPPM) of 6.4 A using the standardized 10/1000 μs double-exponential waveform. This value defines the upper voltage limit imposed on protected circuitry during transient events and is guaranteed across the full operating temperature range.
Is SMBG58AHE3/52 qualified for automotive applications?
Yes, SMBG58AHE3/52 is AEC-Q101 qualified, as confirmed by Vishay's official documentation and ordering code suffix "HE3". This qualification validates its reliability for use in automotive environments, including under-hood applications subject to extended temperature cycling, humidity, and mechanical shock per AEC-Q101 test requirements.
What does the "HE3" suffix indicate in SMBG58AHE3/52?
The "HE3" suffix in SMBG58AHE3/52 denotes RoHS-compliant construction with AEC-Q101 qualification and industrial-grade reliability. It distinguishes this variant from standard "E3" (RoHS, non-automotive) and "HM3" (halogen-free + AEC-Q101) versions - confirming suitability for automotive electronics where both regulatory compliance and stress testing are mandatory.
How does SMBG58AHE3/52 differ from bidirectional TVS diodes like SMBG58CA?
SMBG58AHE3/52 is unidirectional and functions as a polarized clamp between positive rail and ground, while SMBG58CA is bidirectional and symmetrically clamps both positive and negative transients. The unidirectional SMBG58AHE3/52 offers lower leakage (<1 μA at 58 V) and higher surge current capability in one polarity, making it ideal for DC power line protection where polarity is fixed.
What is the thermal resistance (RθJA) of SMBG58AHE3/52 and how is it measured?
The SMBG58AHE3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W, measured with the device mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal on FR-4 PCB. This value assumes standard JEDEC high-K board conditions and is critical for calculating junction temperature rise under sustained surge duty cycles.
SMBG58AHE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.4V
- Voltage - Clamping (Max) @ Ipp:
- 93.6V
- Current - Peak Pulse (10/1000µs):
- 6.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG58AHE3/52 FAQ
1.How can I place an order for SMBG58AHE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG58AHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG58AHE3/52 reliable?
The price and inventory of SMBG58AHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG58AHE3/52 is usually 5 days.
3.What payment methods are accepted for SMBG58AHE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG58AHE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG58AHE3/52?
SMBG58AHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG58AHE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG58AHE3/52?
For technical support, including SMBG58AHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG58AHE3/52 requirements.
6.How does Aetrix verify that SMBG58AHE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBG58AHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG58AHE3/52 meets industry standards.
7.What is the process for return or replacement of SMBG58AHE3/52?
All SMBG58AHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBG58AHE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG58AHE3/52 part is unused and in its original packaging.
Return procedure for SMBG58AHE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG58AHE3/52 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

