Vishay General Semiconductor - Diodes Division SMBG6.5HE3/5B
- Part No.:
- SMBG6.5HE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG6.5HE3/5B.pdf
- Description:
- TVS DIODE 6.5VWM 12.3VC DO215AA
- Quantity:
- Payment:

- Shipping:

Inventory:2,811
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBG6.5HE3/5B from Vishay General Semiconductor is a uni-directional transient voltage suppressor (TVS) diode in DO-215AA (SMBG) package, designed for robust overvoltage protection of sensitive electronics. It features a 6.5 V stand-off voltage (VWM), 7.22–7.98 V breakdown voltage (VBR) at 10 mA, 600 W peak pulse power (10/1000 µs), and clamps transients to ≤11.2 V at 53.6 A. It is AEC-Q101 qualified and used to protect MOSFETs, ICs, and sensor signal lines in automotive and industrial power supply rails.
For engineers reviewing the SMBG6.5HE3/5B datasheet, SMBG6.5HE3/5B pinout, SMBG6.5HE3/5B application, or SMBG6.5HE3/5B equivalent, key selection criteria include its 6.5 V stand-off rating, 11.2 V clamping voltage at rated surge current, AEC-Q101 qualification, RoHS-compliant HE3 suffix (JESD 201 Class 2 whisker test), and DO-215AA thermal performance (RθJA = 100 °C/W).
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>800 µA leakage at 6.5 V), then rapidly avalanches below 8 V to divert surge energy away from downstream circuitry. Its glass-passivated junction ensures stable breakdown and low incremental surge resistance.
Designed for unidirectional DC line protection, SMBG6.5HE3/5B supports 100 A non-repetitive forward surge current (8.3 ms half-sine) and maintains operation from –55 °C to +150 °C junction temperature. It meets MSL Level 1 reflow (260 °C peak) and UL 497B recognition for telecom and automotive protector classification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.5 V - Maximum continuous reverse operating voltage before clamping begins; sets protection threshold for 5 V–6 V logic/power rails. |
| VBR (min/max) | 7.22 V / 7.98 V at 10 mA - Confirmed avalanche onset range; ensures reliable triggering without premature conduction. |
| VC @ IPPM | 11.2 V at 53.6 A - Clamping voltage during 600 W 10/1000 µs surge; defines maximum stress on protected IC or MOSFET. |
| PPPM | 600 W - Peak pulse power handling per single transient; sufficient for ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 Level 3 surges. |
| IFSM | 100 A - 8.3 ms half-sine forward surge rating; supports protection of power switches subject to inductive turn-off spikes. |
| TJ max | +150 °C - Maximum junction temperature; enables use in under-hood automotive modules and industrial motor drives. |
| Qualification | AEC-Q101 qualified - Validated for automotive-grade reliability including HTOL, TC, UHAST, and ESD testing. |
Pinout & Package
Package: DO-215AA (SMBG), surface-mount gull-wing, matte tin-plated leads solderable per J-STD-002/JESD 22-B102. Cathode indicated by band on case end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or low-voltage rail; completes shunt path during overvoltage events. |
| Cathode (banded end) | High-side input terminal | Connected to protected line (e.g., 5 V supply or sensor output); avalanche conduction initiates here during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables robust suppression of automotive load-dump and inductive switching transients without thermal runaway. |
| AEC-Q101 qualification | Validated for automotive under-hood applications with extended temperature cycling, humidity, and lifetime reliability requirements. |
| Glass-passivated junction | Ensures stable VBR tolerance and low leakage drift across temperature and long-term operation. |
| DO-215AA package (MSL Level 1) | Supports lead-free reflow up to 260 °C peak; compatible with automated SMT assembly and high-volume production. |
| HE3 suffix (JESD 201 Class 2) | Guarantees mitigation of tin whisker growth in high-reliability automotive and industrial environments. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 5 V microcontroller supply rails in engine control units (ECUs) against ISO 7637-2 load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed between VCC and GND, clamping surges within nanoseconds. Use Value: Limits voltage seen by MCU to ≤11.2 V during 53.6 A transients, preventing latch-up or permanent damage while maintaining AEC-Q101 compliance. |
Use Scenario: Safeguarding analog outputs of pressure/temperature sensors in PLC I/O modules exposed to field wiring transients. IC Role / Device Role / Timing Role: Uni-directional TVS connected anode-to-ground, cathode-to-signal line, suppressing negative-going noise and positive surges. Use Value: Maintains signal integrity by clamping transients to 11.2 V while adding only 0.096 g mass and no active biasing or timing overhead. |
| DC-DC Converter Input Protection | Telecom Interface Port Protection |
|
Use Scenario: Shielding buck converter inputs in 12 V automotive infotainment systems from battery line disturbances. IC Role / Device Role / Timing Role: Primary overvoltage clamp on input capacitor node, absorbing energy before it reaches controller IC. Use Value: Handles 600 W surges without derating at +125 °C ambient, enabling compact layout with minimal thermal margin overhead. |
Use Scenario: Protecting RS-485 transceiver data lines in base station remote radio units subjected to lightning-induced surges. IC Role / Device Role / Timing Role: Line-to-ground TVS on each differential pair, providing symmetric clamping for bi-polar transients. Use Value: Delivers <1 ns response time and 11.2 V clamping to preserve signal eye diagram integrity while meeting UL 497B protector classification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ6.5AHE3/5B | Same VWM (6.5 V), higher IPPM (62.9 A), lower VC (10.5 V), same DO-215AB (SMB) package but slightly larger footprint than DO-215AA. | Higher surge capacity suits more severe ISO 7637-2 Pulse 5a environments; requires PCB pad revision due to different package outline. | Select SMBJ6.5AHE3/5B when >600 W surge margin is required and board layout allows DO-215AB footprint. |
| SMCJ6.5AHE3/5B | Same VWM and VBR, but 1500 W PPPM, 132 A IPPM, 11.2 V VC, in larger DO-214AB (SMC) package. | Targeted at high-energy industrial motor drive controls where sustained surge exposure exceeds SMBG capability. | Choose SMCJ6.5AHE3/5B only when system-level surge testing exceeds 600 W and thermal mass permits larger SMC footprint. |
Compared with SMBG6.5HE3/5B, SMBJ6.5AHE3/5B offers tighter clamping (10.5 V vs. 11.2 V) and higher surge current in a marginally larger package, while SMCJ6.5AHE3/5B delivers 2.5× peak power in a significantly larger form factor-making SMBG6.5HE3/5B optimal for space-constrained AEC-Q101 designs needing precise 6.5 V standoff and proven 600 W capability.
Availability
SMBG6.5HE3/5B is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, DC-DC converter inputs, and telecom port protection requiring stable component supply and AEC-Q101 traceability.
Supply support for SMBG6.5HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and automotive-grade qualification.
SMBG6.5HE3/5B belongs to Vishay's TRANSZORB® family of surface-mount TVS diodes, engineered specifically for high-speed, high-reliability transient suppression in automotive, industrial, and telecom infrastructure applications.
FAQ
What is the clamping voltage of SMBG6.5HE3/5B at its rated peak pulse current?
The SMBG6.5HE3/5B has a maximum clamping voltage (VC) of 11.2 V at its rated peak pulse current (IPPM) of 53.6 A, measured under the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during a full-rated transient event and is confirmed in Vishay's datasheet Document Number 88456, page 2.
Is SMBG6.5HE3/5B suitable for automotive applications?
Yes, SMBG6.5HE3/5B is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood environments. Its construction includes glass-passivated junction, JESD 201 Class 2 whisker resistance (HE3 suffix), MSL Level 1 reflow compatibility, and operation from –55 °C to +150 °C, all verified per Vishay's qualification report referenced in datasheet 88456.
What does the "HE3" suffix indicate in SMBG6.5HE3/5B?
The "HE3" suffix in SMBG6.5HE3/5B denotes RoHS-compliant construction with AEC-Q101 qualification and JESD 201 Class 2 tin whisker mitigation. It distinguishes this grade from commercial "E3" variants and confirms compliance with automotive reliability standards, including enhanced plating and extended lifetime testing per Vishay's internal qualification protocol.
What is the standoff voltage (VWM) of SMBG6.5HE3/5B, and how is it applied in circuit design?
The standoff voltage (VWM) of SMBG6.5HE3/5B is 6.5 V - the maximum DC or continuous reverse voltage that can be applied without triggering significant conduction. In circuit design, VWM must exceed the normal operating voltage of the protected line (e.g., 5 V rail) with margin, ensuring the SMBG6.5HE3/5B remains non-conductive during steady-state operation.
How does SMBG6.5HE3/5B differ from bi-directional TVS diodes like SMBG6.5CA?
SMBG6.5HE3/5B is a uni-directional TVS diode intended for DC line protection with polarity-sensitive placement (cathode to line, anode to ground), whereas SMBG6.5CA is bi-directional and symmetrical for AC or floating signal lines. The SMBG6.5HE3/5B has a defined cathode band and supports 100 A forward surge current, unlike the CA variant which lacks forward surge rating and uses identical terminals.
SMBG6.5HE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.5V
- Voltage - Breakdown (Min):
- 7.22V
- Voltage - Clamping (Max) @ Ipp:
- 12.3V
- Current - Peak Pulse (10/1000µs):
- 48.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG6.5HE3/5B FAQ
1.How can I place an order for SMBG6.5HE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG6.5HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG6.5HE3/5B reliable?
The price and inventory of SMBG6.5HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG6.5HE3/5B is usually 5 days.
3.What payment methods are accepted for SMBG6.5HE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG6.5HE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG6.5HE3/5B?
SMBG6.5HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG6.5HE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG6.5HE3/5B?
For technical support, including SMBG6.5HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG6.5HE3/5B requirements.
6.How does Aetrix verify that SMBG6.5HE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBG6.5HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG6.5HE3/5B meets industry standards.
7.What is the process for return or replacement of SMBG6.5HE3/5B?
All SMBG6.5HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG6.5HE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG6.5HE3/5B part is unused and in its original packaging.
Return procedure for SMBG6.5HE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG6.5HE3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

