My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBG7.5A-E3/5B
- Part No.:
- SMBG7.5A-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG7.5A-E3/5B.pdf
- Description:
- TVS DIODE 7.5VWM 12.9VC DO215AA
- Quantity:
- Payment:
- Shipping:
Inventory:6,380
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBG7.5A-E3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMBG (DO-215AA) package, designed for primary overvoltage protection of DC power rails and signal lines. It features a 7.5 V stand-off voltage (VWM), 8.33–9.21 V breakdown voltage (VBR) at 1.0 mA test current, 12.9 V maximum clamping voltage (VC) at 46.5 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform.
For engineers reviewing the SMBG7.5A-E3/5B datasheet, SMBG7.5A-E3/5B pinout, SMBG7.5A-E3/5B application, or SMBG7.5A-E3/5B equivalent, key selection criteria include clamping performance under 46.5 A surge, low leakage (<100 μA at 7.5 V), AEC-Q101 qualification for automotive use, RoHS compliance, and compatibility with automated SMT placement on standard PCB pad layouts.
Technical Context
This unidirectional TVS operates as a voltage-clamped shunt protector: it remains high-impedance below 7.5 V, then rapidly avalanches above ~8.33 V to divert transient energy away from downstream ICs. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive surge stress.
Thermal design is constrained by RθJA = 100 °C/W (typ.) and TJ(max) = 150 °C; derating begins above 25 °C ambient per Fig. 2. The device meets UL 497B recognition (QVGQ2) and JESD201 Class 2 whisker resistance, supporting industrial and automotive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.5 V - Maximum continuous reverse operating voltage before significant leakage; sets upper limit for protected line's nominal DC level. |
| VBR (min/max) | 8.33 V / 9.21 V at 1.0 mA - Confirmed avalanche onset range; ensures reliable triggering without premature conduction. |
| VC @ IPPM | 12.9 V at 46.5 A - Clamped voltage during 600 W transient; must stay below downstream IC absolute maximum ratings. |
| ID @ VWM | <100 μA - Low leakage preserves power rail efficiency and avoids false triggering in high-impedance circuits. |
| PPPM | 600 W - Peak surge power handling with 10/1000 μs waveform; supports common ISO 7637-2 and IEC 61000-4-5 threat profiles. |
| TJ(max) | +150 °C - Enables operation in under-hood automotive or industrial enclosures without thermal shutdown. |
| AEC-Q101 | Qualified - Validated for automotive electronics per stress test requirements including temperature cycling, HTRB, and ESD. |
Pinout & Package
Package: SMBG (DO-215AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line; conducts surge current to ground when VLINE exceeds VBR. |
| Anode (unbanded end) | Reference/return path | Typically tied to system ground or low-impedance return plane; completes clamping current path. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power | Handles high-energy transients (e.g., load dump, inductive kick) without failure under 10/1000 μs waveform at 0.01% duty cycle. |
| Fast response time | Sub-nanosecond avalanche turn-on ensures protection before sensitive ICs experience overvoltage stress. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving clamping precision. |
| MSL Level 1 (260 °C) | Compatible with standard lead-free reflow profiles without moisture sensitivity concerns. |
| Glass passivated junction | Enhances long-term stability of VBR and leakage under thermal cycling and humidity exposure. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 5 V or 12 V microcontroller power inputs against load-dump and jump-start transients in vehicle ECUs. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between VCC and GND, clamping surges before they reach MCU VDD pins. Use Value: Maintains VC ≤ 12.9 V during 46.5 A transients, keeping within typical MCU absolute max rating of 16 V while surviving AEC-Q101 stress tests. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA transmitter outputs) from ESD and field wiring faults in factory automation systems. IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional TVS (cathode to signal, anode to ground) limiting voltage excursions on current-loop outputs. Use Value: Limits fault voltage to ≤12.9 V during 1 kV ESD events (IEC 61000-4-2), preventing op-amp latch-up and maintaining loop accuracy. |
| Consumer USB Port ESD Protection | Telecom Line Card Surge Suppression |
Use Scenario: Adding secondary-level ESD robustness to VBUS lines in USB 2.0 host ports where upstream protection is insufficient. IC Role / Device Role / Timing Role: Standoff-rated TVS (VWM = 7.5 V) placed between VBUS and GND to clamp ±15 kV contact ESD per IEC 61000-4-2. Use Value: Delivers <100 μA leakage at 5.5 V nominal VBUS, avoiding standby current penalties while achieving sub-13 V clamping. |
Use Scenario: Front-end protection of Ethernet PHY power supplies (e.g., 3.3 V bias rails) against lightning-induced surges on PoE-enabled line cards. IC Role / Device Role / Timing Role: Primary shunt protector on DC bias rail feeding magnetics, coordinated with gas discharge tube (GDT) front-end. Use Value: Withstands 600 W surges per IEC 61000-4-5 (10/700 μs), enabling coordination with slower GDTs while maintaining low VC for IC survivability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ7.5A | Same VWM (7.5 V), but lower PPPM = 600 W (same rating), higher VC = 13.4 V at 43.5 A; SMB (DO-214AA) package, 1.0 mm taller. | Less effective clamping margin for 3.3 V/5 V logic rails due to higher VC; not AEC-Q101 qualified. | Select SMBG7.5A-E3/5B when automotive qualification, tighter VC, or lower profile is required. |
| SMAJ7.5A | Lower PPPM = 400 W; VC = 12.0 V at 33.3 A; SMA (DO-214AC) package, smaller footprint but lower surge rating. | Insufficient for ISO 7637-2 Pulse 5a (load dump); limited to lower-energy ESD and switching transients. | Choose SMBG7.5A-E3/5B for full automotive load-dump immunity and higher-reliability industrial deployments. |
Compared with SMBJ7.5A and SMAJ7.5A, SMBG7.5A-E3/5B delivers superior clamping (12.9 V vs. ≥13.4 V), AEC-Q101 validation, and identical 600 W rating in a lower-profile SMBG package-making it the preferred choice for space-constrained, high-reliability automotive and industrial power rail protection.
Availability
SMBG7.5A-E3/5B is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, consumer USB power delivery, and telecom line card designs requiring stable component supply, AEC-Q101 compliance, and repeatable surge performance.
Supply support for SMBG7.5A-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade qualification.
The SMBG series targets high-surge, space-constrained applications in automotive, industrial, and communications systems-designed specifically for robust transient suppression where low profile, AEC-Q101 compliance, and precise clamping are critical.
FAQ
What is the maximum clamping voltage of SMBG7.5A-E3/5B under rated surge conditions?
The SMBG7.5A-E3/5B exhibits a maximum clamping voltage (VC) of 12.9 V when subjected to its rated peak pulse current of 46.5 A using the 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and confirmed in the Vishay datasheet revision 09-Jan-2024, ensuring predictable overvoltage limiting for downstream components in the SMBG7.5A-E3/5B protection circuit.
Is SMBG7.5A-E3/5B suitable for automotive applications?
Yes, SMBG7.5A-E3/5B is AEC-Q101 qualified per the Vishay datasheet, having passed stress tests including temperature cycling, high-temperature reverse bias (HTRB), and ESD. Its 150 °C maximum junction temperature, MSL Level 1 rating, and UL 497B recognition make it appropriate for under-hood and body-control module applications where the SMBG7.5A-E3/5B provides certified transient protection.
What does the "E3/5B" suffix indicate in SMBG7.5A-E3/5B?
The "E3" denotes RoHS-compliant, industrial-grade construction with matte tin-plated leads; "5B" specifies packaging in 13-inch diameter plastic tape and reel with a base quantity of 3200 units. This differs from "E3/52", which uses 7-inch reels (750 units). The SMBG7.5A-E3/5B suffix confirms full compliance with JESD201 Class 2 whisker resistance and J-STD-002 solderability standards.
How does SMBG7.5A-E3/5B compare to bidirectional variants like SMBG7.5CA?
SMBG7.5A-E3/5B is unidirectional, with polarity marked by a cathode band and intended for DC line protection (e.g., VCC-to-GND). In contrast, SMBG7.5CA is bidirectional, lacks polarity marking, and protects AC or dual-polarity signals. The SMBG7.5A-E3/5B offers lower leakage at VWM and is optimized for asymmetric DC rails, whereas SMBG7.5CA applies equal clamping in both directions per its CA suffix designation.
What PCB pad layout is recommended for optimal thermal and surge performance of SMBG7.5A-E3/5B?
Vishay specifies mounting SMBG7.5A-E3/5B on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal to achieve rated 600 W pulse power and proper thermal dissipation. Deviating from this layout reduces IPPM capability and increases junction temperature; the SMBG7.5A-E3/5B datasheet Figure 2 provides derating curves for non-standard pad sizes, and the mechanical drawing confirms exact land pattern dimensions for DO-215AA.
SMBG7.5A-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.33V
- Voltage - Clamping (Max) @ Ipp:
- 12.9V
- Current - Peak Pulse (10/1000µs):
- 46.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG7.5A-E3/5B FAQ
1.How can I place an order for SMBG7.5A-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG7.5A-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG7.5A-E3/5B reliable?
The price and inventory of SMBG7.5A-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG7.5A-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBG7.5A-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG7.5A-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG7.5A-E3/5B?
SMBG7.5A-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG7.5A-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG7.5A-E3/5B?
For technical support, including SMBG7.5A-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG7.5A-E3/5B requirements.
6.How does Aetrix verify that SMBG7.5A-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBG7.5A-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG7.5A-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBG7.5A-E3/5B?
All SMBG7.5A-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG7.5A-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG7.5A-E3/5B part is unused and in its original packaging.
Return procedure for SMBG7.5A-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG7.5A-E3/5B Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
