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Vishay General Semiconductor - Diodes Division SMBG7.5CHE3/5B
- Part No.:
- SMBG7.5CHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG7.5CHE3/5B.pdf
- Description:
- TVS DIODE 7.5VWM 14.3VC DO215AA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
SMBG7.5CHE3/5B from Vishay General Semiconductor is a uni-directional transient voltage suppressor (TVS) diode in DO-215AA (SMBG) package, designed for clamping inductive switching transients and ESD events on power rails and signal lines. It features 7.5 V stand-off voltage (VWM), 8.33–9.21 V breakdown voltage (VBR) at 1.0 mA test current, 12.9 V maximum clamping voltage (VC) at 46.5 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform.
For engineers reviewing the SMBG7.5CHE3/5B datasheet, SMBG7.5CHE3/5B pinout, SMBG7.5CHE3/5B application, or SMBG7.5CHE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, RoHS-compliant matte tin terminals, MSL Level 1 reflow compatibility (260 °C peak), and junction temperature range of –55 °C to +150 °C.
Technical Context
This TVS diode operates as a voltage-clamping protection device in series with sensitive downstream circuitry-typically placed between power input and ground or across I/O lines. Its glass-passivated junction ensures stable leakage performance and fast response (<1 ns), while low incremental surge resistance enables effective energy diversion during transient events.
The SMBG7.5CHE3/5B is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), supports automated SMT placement, and meets UL 94 V-0 flammability requirements. Its thermal resistance (RθJA = 100 °C/W) reflects standard PCB pad layout (0.2" × 0.2" copper per terminal), and it is explicitly qualified to AEC-Q101 for automotive-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.5 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working margin. |
| VBR (min/max) | 8.33 V / 9.21 V at IT = 1.0 mA - Confirmed breakdown threshold range; ensures predictable turn-on under transient stress. |
| VC @ IPPM | 12.9 V at 46.5 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected ICs. |
| PPPM | 600 W - Peak pulse power handling capability; validates robustness against common lightning/inductive spikes. |
| ID @ VWM | 100 µA max - Reverse leakage at stand-off voltage; low value minimizes quiescent power loss and avoids false triggering. |
| TJ max | +150 °C - Maximum junction temperature; enables operation in under-hood automotive or industrial environments. |
| AEC-Q101 | Qualified - Confirmed reliability for automotive electronics per stress-test standard; includes HTGB, HTRB, TCT, etc. |
Pinout & Package
Package: DO-215AA (SMBG), surface-mount gull-wing leaded case with cathode band marking. Dimensions: 6.48 mm × 3.94 mm × 2.10 mm (L × W × H); terminals are matte tin plated, solderable per J-STD-002/JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to protected line (e.g., VIN) | Low forward voltage drop (VF = 3.5 V at 50 A) allows use in crowbar-like overvoltage shutdown paths. |
| Cathode | Current exit point in forward bias; marked by band; connected to ground or return path | Band orientation confirms polarity during automated optical inspection (AOI) and prevents misplacement in uni-directional layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR tolerance and long-term leakage stability across temperature and humidity stress. |
| 600 W 10/1000 µs pulse rating | Validated clamping performance against IEC 61000-4-5 Level 4 surges (4 kV line-to-ground) without degradation. |
| AEC-Q101 qualification | Confirms suitability for automotive powertrain, body control, and ADAS modules requiring zero-failure field reliability. |
| MSL Level 1 (260 °C peak) | Enables single-reflow assembly without moisture-induced popcorn failure; no baking required prior to SMT. |
| UL 94 V-0 molding compound | Meets flame-retardancy requirements for enclosed automotive and industrial enclosures. |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Clamp |
|---|---|
|
Use Scenario: 12 V battery rail in engine control unit exposed to load dump (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Uni-directional clamping TVS placed between battery input and DC-DC converter input stage. Use Value: Limits transient voltage to ≤12.9 V, protecting 16 V-rated input capacitors and LDO regulators from overvoltage failure. |
Use Scenario: Analog output line (0–5 V) of pressure sensor in factory automation PLC module. IC Role / Device Role / Timing Role: Low-capacitance clamping device across signal and ground to suppress ESD (IEC 61000-4-2 ±8 kV contact). Use Value: 100 µA max leakage at 7.5 V preserves signal integrity; fast response prevents ADC saturation during sub-ns ESD events. |
| Consumer USB Port Surge Suppression | Telecom DC Power Feed Protection |
|
Use Scenario: VBUS line of USB 2.0 port in smart speaker subjected to hot-plug transients and cable coupling noise. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 5 V supply rail upstream of USB switch and PHY. Use Value: 12.9 V clamping ensures downstream 5.5 V tolerant USB transceivers remain within absolute maximum ratings. |
Use Scenario: -48 V DC feed line in telecom base station remote radio head (RRH) powered via PoE-like interface. IC Role / Device Role / Timing Role: Reverse-polarity protection and surge clamp on negative supply rail relative to chassis ground. Use Value: AEC-Q101 qualification and -55 °C to +150 °C operation ensure reliability in outdoor cabinet thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ7.5AHE3/5B | Same VWM (7.5 V), identical DO-214AA (SMB) package but larger footprint (7.11 mm × 6.22 mm vs. SMBG's 6.48 mm × 3.94 mm); RθJA = 110 °C/W. | Higher thermal mass suits higher average power dissipation; less suitable for dense automotive PCBs with tight spacing. | Select SMBJ7.5AHE3/5B only when board layout permits larger SMB footprint and thermal derating margin is critical. |
| 1.5SMC7.5AHE3/A | Same electrical specs, but DO-214AB (SMC) package (7.75 mm × 6.22 mm); higher PPPM (1500 W) but slower response due to larger junction capacitance. | Used where higher single-event energy absorption is needed (e.g., AC mains input), not optimized for fast digital signal lines. | Choose 1.5SMC7.5AHE3/A only for high-energy, low-frequency surge scenarios-not for high-speed data or compact automotive modules. |
Compared with SMBG7.5CHE3/5B, SMBJ7.5AHE3/5B offers comparable clamping but requires more PCB area, while 1.5SMC7.5AHE3/A trades speed and size for higher pulse energy capacity-making SMBG7.5CHE3/5B optimal for space-constrained, fast-response automotive and industrial signal protection.
Availability
SMBG7.5CHE3/5B is available at Aetrix Electronics and suitable for automotive power input protection, industrial sensor signal line clamping, consumer USB port surge suppression, telecom DC power feed protection, and AEC-Q101-compliant embedded systems requiring stable component supply and full traceability.
Supply support for SMBG7.5CHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, precision, and automotive-grade qualification.
The SMBG series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-reliability transient suppression in automotive, industrial, and telecom infrastructure where AEC-Q101 compliance and consistent clamping performance are mandatory.
FAQ
What is the polarity configuration of SMBG7.5CHE3/5B?
SMBG7.5CHE3/5B is a uni-directional transient voltage suppressor diode, meaning it conducts only in reverse breakdown mode-forward biased like a standard diode. The cathode is marked by a visible band on the SMBG package body, and its forward voltage drop is specified as 3.5 V at 50 A. This polarity enables precise placement in DC power rail protection where reverse conduction must be blocked during normal operation.
Does SMBG7.5CHE3/5B meet automotive qualification standards?
Yes, SMBG7.5CHE3/5B carries the HE3 suffix, which denotes AEC-Q101 qualification per Vishay's ordering nomenclature. This includes testing for high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling (TCT), and unbiased highly accelerated stress test (uHAST). The qualification confirms suitability for automotive powertrain, body electronics, and ADAS modules where zero-field-failure reliability is required.
What is the maximum clamping voltage of SMBG7.5CHE3/5B under surge conditions?
The maximum clamping voltage (VC) of SMBG7.5CHE3/5B is 12.9 V, measured at its rated peak pulse current (IPPM) of 46.5 A using the standardized 10/1000 µs double-exponential waveform. This value represents the highest voltage that will appear across the protected circuit during a worst-case transient event, ensuring downstream components rated for ≤13.2 V absolute maximum can remain undamaged.
How does the SMBG package differ from SMB or SMC packages in thermal performance?
The DO-215AA (SMBG) package used by SMBG7.5CHE3/5B has a lower thermal resistance (RθJA = 100 °C/W) compared to DO-214AA (SMB, RθJA ≈ 110 °C/W) and DO-214AB (SMC, RθJA ≈ 120 °C/W) when mounted on identical 0.2" × 0.2" copper pads. Its smaller footprint (6.48 mm × 3.94 mm) also reduces parasitic inductance, enabling faster transient response-critical for protecting high-speed interfaces and microcontrollers.
Is SMBG7.5CHE3/5B compatible with lead-free reflow processes?
Yes, SMBG7.5CHE3/5B is rated for MSL Level 1 per J-STD-020 and supports peak reflow temperatures up to 260 °C, fully compliant with IPC/JEDEC J-STD-020 Class 3 standard for lead-free soldering. Its matte tin-plated terminals meet JESD 22-B102 for solderability, and the HE3 suffix confirms qualification for automotive manufacturing environments where strict process control and zero moisture sensitivity are required.
SMBG7.5CHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.33V
- Voltage - Clamping (Max) @ Ipp:
- 14.3V
- Current - Peak Pulse (10/1000µs):
- 42A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG7.5CHE3/5B FAQ
1.How can I place an order for SMBG7.5CHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG7.5CHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG7.5CHE3/5B reliable?
The price and inventory of SMBG7.5CHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG7.5CHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBG7.5CHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG7.5CHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG7.5CHE3/5B?
SMBG7.5CHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG7.5CHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG7.5CHE3/5B?
For technical support, including SMBG7.5CHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG7.5CHE3/5B requirements.
6.How does Aetrix verify that SMBG7.5CHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBG7.5CHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG7.5CHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBG7.5CHE3/5B?
All SMBG7.5CHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG7.5CHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG7.5CHE3/5B part is unused and in its original packaging.
Return procedure for SMBG7.5CHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG7.5CHE3/5B Tags
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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