Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBG7.5HE3/5B

Part No.:
SMBG7.5HE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-215AA, SMB Gull Wing
Datasheet:
AetrixSMBG7.5HE3/5B.pdf
Description:
TVS DIODE 7.5VWM 14.3VC DO215AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,565

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBG7.5HE3/5B from Vishay General Semiconductor is a uni-directional transient voltage suppressor (TVS) diode in DO-215AA (SMBG) package, designed for clamping inductive switching transients and ESD events on power rails and signal lines. It features 7.5 V stand-off voltage (VWM), 8.33–9.21 V breakdown voltage (VBR) at 1.0 mA, 12.9 V clamping voltage (VC) at 46.5 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform). Used in automotive power supply protection and industrial sensor interface circuits.

For engineers reviewing the SMBG7.5HE3/5B datasheet, SMBG7.5HE3/5B pinout, SMBG7.5HE3/5B application, or SMBG7.5HE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, RoHS-compliant matte tin terminals, and MSL Level 1 reflow compatibility up to 260 °C.

Technical Context

This TVS diode operates as a voltage-clamping protection device in series with sensitive downstream circuitry, conducting only when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable leakage and fast response (<1 ns), while low incremental surge resistance minimizes clamping overshoot during high-current transients.

The SMBG7.5HE3/5B is rated for repetitive 10/1000 µs surges at 0.01% duty cycle and supports single 8.3 ms half-sine surge currents up to 100 A (IFSM). Thermal resistance is 100 °C/W junction-to-ambient (RθJA) on standard 5.0 mm × 5.0 mm copper pads, enabling reliable operation in compact automotive and industrial PCB layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 7.5 V - Maximum continuous reverse operating voltage before conduction begins; defines safe DC/AC rail margin.
VBR (min/max) 8.33 V / 9.21 V at IT = 1.0 mA - Confirmed breakdown range ensures consistent turn-on across production lots.
VC @ IPPM 12.9 V at 46.5 A - Clamping voltage under 600 W 10/1000 µs surge; limits stress on protected ICs.
PPPM 600 W - Peak pulse power handling per JEDEC-standard waveform; validates robustness against IEC 61000-4-5 surges.
ID @ VWM 100 µA max - Low reverse leakage preserves efficiency in battery-powered or high-impedance sensing nodes.
TJ max +150 °C - Enables use in under-hood automotive environments and thermally constrained enclosures.
AEC-Q101 Qualified - Meets stress test requirements for automotive electronics, including temperature cycling and HTRB.

Pinout & Package

DO-215AA (SMBG) surface-mount package with gull-wing leads; cathode indicated by band on body end. Matte tin-plated terminals meet J-STD-002 solderability and JESD 22-B102 mechanical durability standards. MSL Level 1 rating allows single-reflow without dry-packaging.

Pin/Terminal Circuit Role Design Meaning
Anode Low-side reference terminal Connected to ground or lowest potential node; enables clamping of positive transients on cathode side.
Cathode High-side surge input terminal Connected to protected line (e.g., 12 V rail or CAN-H); conducts surge current to anode during overvoltage.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including HTOL, TC, and HTRB testing per JESD22 standards.
Glass passivated junction Ensures stable VBR and low leakage over temperature and lifetime; eliminates risk of junction corrosion.
600 W peak pulse power (10/1000 µs) Withstands IEC 61000-4-5 Level 4 surges (4 kV line-earth) without degradation in typical PCB layouts.
MSL Level 1 (260 °C peak) Supports standard lead-free reflow profiles without preconditioning or moisture-sensitive handling.
RoHS-compliant HE3 suffix Indicates AEC-Q101 qualified, whisker-tested (JESD 201 Class 2), and halogen-free construction.

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs from load-dump and alternator ripple transients.

IC Role / Device Role / Timing Role: Uni-directional clamping diode placed between power input and upstream fuse/LDO.

Use Value: Limits voltage to ≤12.9 V during 46.5 A surge, preventing damage to MCU power pins and internal regulators.

Use Scenario: Safeguarding analog front-end inputs of pressure/temperature sensors in PLC modules.

IC Role / Device Role / Timing Role: Low-leakage TVS on signal lines (e.g., 4–20 mA loop or RS-485 bus stubs).

Use Value: 100 µA max ID at 7.5 V avoids loading high-impedance sensor outputs; fast response prevents latch-up.

Consumer Power Adapter Input Stage Telecom DC Power Entry Protection

Use Scenario: Secondary-side overvoltage suppression in AC/DC adapters powering USB-C PD controllers.

IC Role / Device Role / Timing Role: Standoff-rated TVS across +5 V output rail to absorb flyback spikes from transformer leakage.

Use Value: 7.5 V VWM aligns with 5 V ±10% regulation window; 12.9 V VC stays below absolute max rating of USB-PD ICs.

Use Scenario: Primary protection for -48 V telecom power feeds entering base station control cards.

IC Role / Device Role / Timing Role: Cathode tied to -48 V rail, anode to chassis ground; clamps negative-going surges.

Use Value: 150 °C TJ max supports operation in sealed, fanless telecom enclosures; AEC-Q101 grade adds long-term field confidence.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ7.5AHE3/5B Same VWM (7.5 V), but SMBJ package (DO-214AA); RθJA = 85 °C/W vs. 100 °C/W for SMBG. Higher power density; preferred where board space is tighter but thermal pad area is limited. Select SMBJ7.5AHE3/5B if layout allows smaller footprint and thermal management uses localized copper.
1.5SMC7.5AHE3/A Same electrical specs, but larger DO-214AB (SMC) package; RθJA = 60 °C/W; IPPM = 49.2 A. Better thermal performance for high-duty-cycle surges; requires 30% more board area. Choose 1.5SMC7.5AHE3/A for industrial motor drives with frequent switching transients and ambient >85 °C.

Compared with SMBG7.5HE3/5B, SMBJ7.5AHE3/5B offers superior thermal resistance in a smaller footprint but lower surge current margin, while 1.5SMC7.5AHE3/A trades size for higher sustained energy handling-making SMBG7.5HE3/5B optimal for space-constrained AEC-Q101 automotive modules requiring balanced surge capability and manufacturability.

Availability

SMBG7.5HE3/5B is available at Aetrix Electronics and suitable for automotive ECU power protection, industrial sensor interface hardening, and telecom DC feed protection requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SMBG7.5HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade qualification.

The SMBG series targets surface-mount transient suppression in space-constrained, high-reliability applications-designed specifically for AEC-Q101 compliance, automated assembly, and robust clamping in harsh electromagnetic environments.

FAQ

What is the maximum clamping voltage of SMBG7.5HE3/5B under surge conditions?

The SMBG7.5HE3/5B has a maximum clamping voltage (VC) of 12.9 V at 46.5 A peak pulse current (IPPM), measured using the standardized 10/1000 µs waveform. This value ensures protected downstream ICs-such as automotive MCUs or analog sensors-are exposed to no more than 12.9 V during worst-case transients, well within typical 16 V absolute maximum ratings.

Is SMBG7.5HE3/5B suitable for automotive applications?

Yes, SMBG7.5HE3/5B is AEC-Q101 qualified and explicitly rated for automotive use. Its construction includes glass-passivated junction, matte tin terminals compliant with JESD 22-B102, MSL Level 1 reflow capability, and guaranteed operation from –55 °C to +150 °C-meeting requirements for engine control units, body electronics, and ADAS power domains.

What does the "HE3" suffix indicate in SMBG7.5HE3/5B?

The "HE3" suffix denotes that SMBG7.5HE3/5B is RoHS-compliant, AEC-Q101 qualified, and passes JESD 201 Class 2 whisker testing. It distinguishes this automotive-grade variant from commercial "E3" versions (e.g., SMBG7.5A-E3/5B), which lack AEC-Q101 validation and Class 2 whisker resistance.

How does SMBG7.5HE3/5B differ from bi-directional TVS diodes like SMBG7.5CA?

SMBG7.5HE3/5B is uni-directional and intended for DC rail protection where polarity is fixed (e.g., +12 V to ground), offering lower leakage and sharper knee characteristics. In contrast, SMBG7.5CA is bi-directional-used for AC-coupled or floating lines-and exhibits symmetric clamping in both directions, with higher ID at VWM and different VBR symmetry.

What is the recommended PCB pad layout for SMBG7.5HE3/5B?

Vishay specifies a minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad per terminal for SMBG7.5HE3/5B to achieve rated 600 W pulse power and thermal resistance (RθJA = 100 °C/W). Pad design must follow DO-215AA outline dimensions, maintain solder mask clearance around gull-wing leads, and avoid thermal reliefs on high-current paths to ensure reliable surge conduction.

SMBG7.5HE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-215AA, SMB Gull Wing
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
7.5V
Voltage - Breakdown (Min):
8.33V
Voltage - Clamping (Max) @ Ipp:
14.3V
Current - Peak Pulse (10/1000µs):
42A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBG)

SMBG7.5HE3/5B FAQ

1.How can I place an order for SMBG7.5HE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBG7.5HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBG7.5HE3/5B reliable?

The price and inventory of SMBG7.5HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG7.5HE3/5B is usually 5 days.

3.What payment methods are accepted for SMBG7.5HE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG7.5HE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBG7.5HE3/5B?

SMBG7.5HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBG7.5HE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBG7.5HE3/5B?

For technical support, including SMBG7.5HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG7.5HE3/5B requirements.

6.How does Aetrix verify that SMBG7.5HE3/5B is sourced from the original manufacturer or authorized distributors?

All SMBG7.5HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG7.5HE3/5B meets industry standards.

7.What is the process for return or replacement of SMBG7.5HE3/5B?

All SMBG7.5HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG7.5HE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBG7.5HE3/5B part is unused and in its original packaging.

Return procedure for SMBG7.5HE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBG7.5HE3/5B Tags

  • SMBG7.5HE3/5B
  • SMBG7.5HE3/5B PDF
  • SMBG7.5HE3/5B Datasheet
  • SMBG7.5HE3/5B Specifications
  • SMBG7.5HE3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBG7.5HE3/5B
  • Buy SMBG7.5HE3/5B
  • SMBG7.5HE3/5B Price
  • SMBG7.5HE3/5B Distributor
  • SMBG7.5HE3/5B Supplier
  • SMBG7.5HE3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER