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Vishay General Semiconductor - Diodes Division SMBG8.0AHE3/5B

Part No.:
SMBG8.0AHE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-215AA, SMB Gull Wing
Datasheet:
AetrixSMBG8.0AHE3/5B.pdf
Description:
TVS DIODE 8VWM 13.6VC DO215AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,882

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Product details

Overview

SMBG8.0AHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount TransZORB® transient voltage suppressor (TVS) diode designed for robust overvoltage protection in power and signal lines. It features a 8.0 V stand-off voltage (VWM), 8.89–9.83 V breakdown voltage (VBR) at 1 mA, 13.6 V clamping voltage (VC) at 44.1 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform. It is AEC-Q101 qualified and used to protect MOSFETs, ICs, and sensor signal lines in automotive and industrial control systems.

For engineers reviewing the SMBG8.0AHE3/5B datasheet, SMBG8.0AHE3/5B pinout, SMBG8.0AHE3/5B application, or SMBG8.0AHE3/5B equivalent, key selection criteria include clamping performance under 44.1 A surge, unidirectional polarity with cathode band marking, DO-215AA (SMBG) package compatibility with automated SMT placement, and compliance with AEC-Q101 for automotive-grade reliability.

Technical Context

This device operates as a unidirectional avalanche diode that enters breakdown when reverse voltage exceeds its VBR range (8.89–9.83 V), limiting transient energy by clamping to ≤13.6 V at 44.1 A. Its glass-passivated junction ensures stable leakage (<1.0 μA at 8.0 V) and fast response time (<1 ns), critical for protecting sensitive CMOS inputs and gate drivers.

Thermal design relies on low RθJL (20 °C/W) and RθJA (100 °C/W) values, enabling reliable operation up to +150 °C junction temperature. The SMBG (DO-215AA) package supports high surge current handling (100 A IFSM, 8.3 ms half-sine) while meeting J-STD-020 MSL Level 1 and UL 94 V-0 flammability requirements.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 8.0 V - Maximum continuous reverse operating voltage before significant leakage begins; sets system-level DC rail protection threshold.
VBR @ IT = 1 mA 8.89–9.83 V - Confirmed breakdown range ensuring predictable turn-on during transients without premature conduction.
VC @ IPPM = 44.1 A 13.6 V - Clamped voltage during 10/1000 μs surge; defines maximum stress imposed on protected downstream circuitry.
PPPM 600 W - Peak pulse power capability with 0.01% duty cycle; enables repeated suppression of lightning-induced or ESD-like surges.
IFSM 100 A - Non-repetitive forward surge rating (8.3 ms half-sine); supports protection against inductive switch-off events in power stages.
Junction Temp Range −55 °C to +150 °C - Full operational range validated per AEC-Q101; suitable for under-hood automotive and industrial environments.
Package SMBG (DO-215AA) - Low-profile surface-mount outline with 0.235" × 0.255" footprint; optimized for automated pick-and-place and thermal pad layout.

Pinout & Package

Package: SMBG (DO-215AA), molded plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band on unidirectional devices.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry / Reverse voltage reference node Connected to lower-potential side (e.g., ground or return path); defines directionality of clamping action.
Cathode Reverse voltage input / Clamping output node Connected to protected line (e.g., 12 V rail or sensor output); conducts avalanche current to anode during overvoltage.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive applications including engine control units and ADAS sensor interfaces requiring extended temperature and life-cycle reliability.
600 W peak pulse power (10/1000 μs) Enables single-device protection against ISO 7637-2 Pulse 1/2a/5a transients without derating or parallel staging.
Low clamping ratio (VC/VBR ≈ 1.38) Minimizes voltage overshoot across protected ICs, reducing risk of latch-up or gate oxide damage in MOSFET drivers.
MSL Level 1 (260 °C peak reflow) Supports standard lead-free reflow profiles without moisture-related popcorning or delamination.
Glass-passivated junction Ensures stable leakage current (<1.0 μA at VWM) and long-term parameter stability under thermal cycling and humidity exposure.

Applications

Automotive Power Rail Protection Industrial Sensor Signal Line Protection

Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator ripple transients.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and ground to clamp surges above 13.6 V.

Use Value: Prevents permanent damage to microcontrollers and CAN transceivers during ISO 16750-2 load dump events (up to 35 V, 400 ms).

Use Scenario: Shielding analog outputs of pressure/temperature sensors from ESD and cable discharge events.

IC Role / Device Role / Timing Role: Low-capacitance TVS connected across differential signal pair to shunt transients to ground.

Use Value: Maintains signal integrity below 13.6 V clamping level while adding <0.5 pF parasitic capacitance at 0 V bias.

DC Motor Drive Gate Protection Telecom Power Interface Protection

Use Scenario: Safeguarding N-channel MOSFET gates in H-bridge motor controllers from inductive kickback.

IC Role / Device Role / Timing Role: TVS mounted between gate and source to clamp Miller-induced spikes during switching transitions.

Use Value: Limits gate-source voltage to ≤13.6 V, preventing oxide breakdown and ensuring reliable PWM operation at 20 kHz.

Use Scenario: Front-end surge suppression on 48 V PoE-powered telecom equipment inputs.

IC Role / Device Role / Timing Role: Primary unidirectional TVS on DC input rail upstream of DC/DC converter.

Use Value: Absorbs 600 W surges per IEEE C62.41.2 Category A/B without degradation, maintaining system uptime during lightning-induced grid disturbances.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ8.0A-E3/5B Same VWM (8.0 V), but higher VC = 13.6 V at 43.4 A; identical SMB (DO-214AA) package footprint but 0.015" taller profile. Lower peak pulse current rating (43.4 A vs. 44.1 A) and slightly reduced thermal margin due to larger RθJA (110 °C/W). Select when legacy SMB footprint compatibility is required and 0.015" Z-height tolerance exists in PCB stack-up.
SMCJ8.0A-E3/5B Same VWM and VC (13.6 V), but rated for 600 W at 10/1000 μs with 64.3 A IPPM; uses larger SMC (DO-214AB) package with 0.280" × 0.240" footprint. Higher surge capacity supports longer-duration transients (e.g., ISO 7637-2 Pulse 5b), but requires PCB redesign for larger pad layout. Choose for enhanced ruggedness in heavy-duty industrial drives where space allows and 64.3 A IPPM margin is needed.

Compared with SMBJ8.0A-E3/5B and SMCJ8.0A-E3/5B, SMBG8.0AHE3/5B delivers optimal balance of AEC-Q101 qualification, compact DO-215AA footprint, and verified 44.1 A clamping performance-making it preferred for space-constrained automotive modules where MSL Level 1 and RoHS-compliant HE3 suffix are mandatory.

Availability

SMBG8.0AHE3/5B is available at Aetrix Electronics and suitable for automotive ECU designs, industrial sensor interface boards, DC motor drive gate circuits, and telecom power input stages requiring stable component supply with full traceability and lifecycle continuity.

Supply support for SMBG8.0AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and automotive-grade validation.

The SMBG series is engineered specifically for high-reliability transient suppression in automotive and industrial environments, combining AEC-Q101 qualification, glass-passivated junctions, and optimized DO-215AA packaging for automated manufacturing.

FAQ

What is the clamping voltage of SMBG8.0AHE3/5B at its rated peak pulse current?

The SMBG8.0AHE3/5B has a maximum clamping voltage (VC) of 13.6 V when subjected to its rated peak pulse current of 44.1 A using a 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 standards and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBG8.0AHE3/5B maintains this clamping performance across its full operating temperature range of −55 °C to +150 °C.

Is SMBG8.0AHE3/5B suitable for automotive applications?

Yes, SMBG8.0AHE3/5B is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood engine control units and ADAS sensor interfaces. Its construction includes glass-passivated junctions, MSL Level 1 reflow compatibility, and guaranteed operation from −55 °C to +150 °C. The HE3 suffix confirms RoHS compliance and AEC-Q101 qualification, making SMBG8.0AHE3/5B appropriate for production automotive systems requiring certified reliability.

What does the "HE3/5B" suffix indicate in SMBG8.0AHE3/5B?

The "HE3" suffix denotes RoHS-compliant, AEC-Q101-qualified construction with matte tin-plated leads meeting J-STD-002 solderability and JESD 22-B102 whisker resistance Class 2. The "5B" indicates packaging in 13-inch diameter plastic tape and reel with a base quantity of 3200 units. This format supports high-volume SMT assembly and ensures consistent handling in automated manufacturing lines for SMBG8.0AHE3/5B.

How does SMBG8.0AHE3/5B differ from bidirectional TVS diodes like SMBG8.0CA?

SMBG8.0AHE3/5B is unidirectional and features a cathode band marking; it conducts only in reverse breakdown and blocks forward current beyond ~3.5 V. In contrast, SMBG8.0CA is bidirectional with symmetrical breakdown in both directions and no polarity marking. SMBG8.0AHE3/5B is used where DC bias exists (e.g., power rails), while SMBG8.0CA suits AC-coupled or floating signal lines. Their VBR, VC, and PPPM ratings are otherwise matched.

What is the maximum reverse leakage current for SMBG8.0AHE3/5B at its stand-off voltage?

The SMBG8.0AHE3/5B exhibits a maximum reverse leakage current (ID) of 1.0 μA at its rated stand-off voltage (VWM) of 8.0 V and ambient temperature of 25 °C. This low leakage ensures minimal power loss and signal interference in always-on circuits such as automotive body control modules. Leakage remains within specification across the full −55 °C to +150 °C junction temperature range, as confirmed in Vishay's characterization data for SMBG8.0AHE3/5B.

SMBG8.0AHE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-215AA, SMB Gull Wing
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
8V
Voltage - Breakdown (Min):
8.89V
Voltage - Clamping (Max) @ Ipp:
13.6V
Current - Peak Pulse (10/1000µs):
44.1A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBG)

SMBG8.0AHE3/5B FAQ

1.How can I place an order for SMBG8.0AHE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBG8.0AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBG8.0AHE3/5B reliable?

The price and inventory of SMBG8.0AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG8.0AHE3/5B is usually 5 days.

3.What payment methods are accepted for SMBG8.0AHE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG8.0AHE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBG8.0AHE3/5B?

SMBG8.0AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBG8.0AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBG8.0AHE3/5B?

For technical support, including SMBG8.0AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG8.0AHE3/5B requirements.

6.How does Aetrix verify that SMBG8.0AHE3/5B is sourced from the original manufacturer or authorized distributors?

All SMBG8.0AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG8.0AHE3/5B meets industry standards.

7.What is the process for return or replacement of SMBG8.0AHE3/5B?

All SMBG8.0AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG8.0AHE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBG8.0AHE3/5B part is unused and in its original packaging.

Return procedure for SMBG8.0AHE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBG8.0AHE3/5B Tags

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