Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBG8.0-E3/5B

Part No.:
SMBG8.0-E3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-215AA, SMB Gull Wing
Datasheet:
AetrixSMBG8.0-E3/5B.pdf
Description:
TVS DIODE 8VWM 15VC DO215AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,289

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBG8.0-E3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-215AA (SMBG) package, designed for robust overvoltage protection of DC power rails and signal lines. It features 8.0 V stand-off voltage (VWM), 8.89–9.83 V breakdown voltage (VBR) at 1 mA, 13.6 V clamping voltage (VC) at 44.1 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform.

For engineers reviewing the SMBG8.0-E3/5B datasheet, SMBG8.0-E3/5B pinout, SMBG8.0-E3/5B application, or SMBG8.0-E3/5B equivalent, key selection criteria include clamping performance under 44.1 A surge, thermal resistance (RθJA = 100 °C/W), AEC-Q101 qualification status, RoHS compliance, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.

Technical Context

This unidirectional TVS diode operates as a voltage-clamped shunt protector, conducting only when reverse voltage exceeds VBR to divert transient energy away from downstream ICs or MOSFETs. Its glass-passivated junction ensures stable leakage (<1.0 µA at VWM) and fast response time (<1 ns), critical for protecting sensitive inputs against ESD and inductive switching spikes.

The device is rated for -55 °C to +150 °C operating junction temperature, with thermal resistance RθJL = 20 °C/W to lead and MSL Level 1 moisture sensitivity. It meets UL 497B recognition (QVGQ2) and is qualified to AEC-Q101 for automotive-grade reliability-though SMBG8.0-E3/5B itself carries the commercial-grade E3 suffix, not HE3.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 8.0 V - Maximum continuous reverse working voltage before clamping begins; sets upper limit for protected circuit's normal operating range.
VBR (min/max) 8.89 V / 9.83 V at 1 mA - Confirmed breakdown threshold; ensures reliable triggering above nominal rail while avoiding false conduction.
VC @ IPPM 13.6 V at 44.1 A - Clamped voltage during 600 W transient; defines worst-case overvoltage seen by protected load.
PPPM 600 W - Peak pulse power handling with 10/1000 µs waveform; supports high-energy transients like ISO 7637-2 Pulse 1/2a/5a.
ID @ VWM <1.0 µA - Ultra-low reverse leakage at stand-off voltage; prevents unnecessary power loss or bias shift in low-current circuits.
TJ max +150 °C - Maximum junction temperature; enables operation in under-hood automotive or industrial environments with minimal derating.
RθJA 100 °C/W - Thermal resistance junction-to-ambient on standard 5.0 mm × 5.0 mm pads; informs heatsinking requirements for repetitive surges.

Pinout & Package

Package: DO-215AA (SMBG), surface-mount gull-wing configuration. Cathode indicated by band on one end; anode is unmarked opposite terminal. Meets UL 94 V-0 flammability rating; matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Transient current sink node Connected to protected line; conducts surge current to ground or lower-potential rail during overvoltage event.
Anode (unbanded end) Reference/return path Typically tied to system ground or common return; completes shunt path for clamping action.

Key Features

Feature Design Value
600 W peak pulse power (10/1000 µs) Enables protection against high-energy transients such as load dump or inductive kick without thermal runaway.
Clamping voltage ≤13.6 V at 44.1 A Ensures downstream 5 V or 3.3 V logic remains within absolute maximum ratings during surge events.
Glass-passivated junction Provides stable VBR tolerance and long-term reliability under thermal cycling and humidity stress.
MSL Level 1, peak reflow 260 °C Supports standard lead-free SMT assembly without pre-baking or special handling.
AEC-Q101 qualified variant available (HE3 suffix) Confirms automotive-grade reliability; SMBG8.0-E3/5B is commercial-grade but shares identical die and package.

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs from ISO 7637-2 Pulse 1 (inductive switch-off) and Pulse 5a (load dump).

IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between power rail and chassis ground to clamp transients before they reach LDOs or microcontrollers.

Use Value: Limits voltage excursion to ≤13.6 V during 44.1 A surge, preventing latch-up or gate oxide damage in downstream 12 V tolerant ICs.

Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) connected to ADC inputs in factory automation PLCs.

IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) TVS mounted directly at connector entry point to suppress ESD and cable-coupled noise.

Use Value: Maintains signal integrity with sub-µA leakage at 8.0 V rail, while clamping fast transients (<1 ns response) before they corrupt 12-bit+ measurements.

Consumer USB Power Input Protection Telecom Line Card Surge Suppression

Use Scenario: Securing 5 V USB Type-A/C input stages in smart home hubs against hot-plug transients and ESD per IEC 61000-4-2.

IC Role / Device Role / Timing Role: Primary-level TVS on VBUS line, upstream of USB PD controller and port power switches.

Use Value: Delivers 600 W surge capability and 13.6 V clamping to prevent overvoltage damage to USB interface ICs rated for 5.5 V absolute max.

Use Scenario: Front-end protection of Ethernet PHY or RS-485 transceivers in telecom base station line cards exposed to lightning-induced surges.

IC Role / Device Role / Timing Role: First-stage shunt device on differential pair or power feed, coordinated with GDT or MOV secondary protection.

Use Value: Fast response and precise 8.0 V VWM allow clean coordination with higher-voltage secondary protectors without premature conduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ8.0A-E3/5B Same VWM (8.0 V), identical DO-214AA (SMB) package but slightly larger footprint; 600 W rating, VC = 13.6 V @ 44.1 A - matches SMBG8.0-E3/5B electrically. DO-214AA has 0.205" body width vs. DO-215AA's 0.155"; requires PCB pad revision if replacing SMBG. Select SMBJ8.0A-E3/5B only if existing layout uses SMB footprint; otherwise SMBG offers tighter board space utilization.
SAC8.0-E3/5B Same VWM and VC, but in smaller SOD-123FL package (RθJA = 180 °C/W); 400 W PPPM rating limits surge handling vs. 600 W for SMBG8.0-E3/5B. Lower power rating restricts use to low-energy transients (e.g., ESD-only); unsuitable for load dump or inductive switching. Choose SAC8.0-E3/5B only for space-constrained consumer designs where 400 W surge margin is sufficient and thermal budget allows higher RθJA.

Compared with SMBJ8.0A-E3/5B and SAC8.0-E3/5B, SMBG8.0-E3/5B uniquely balances 600 W surge capacity, compact DO-215AA footprint, and commercial-grade cost-making it optimal for mid-tier industrial and automotive accessory designs requiring proven robustness without AEC-Q101 overhead.

Availability

SMBG8.0-E3/5B is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface protection, and consumer USB power input protection requiring stable component supply across production lifecycles.

Supply support for SMBG8.0-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The SMBG series targets high-power transient suppression in space-constrained SMT applications, combining 600 W capability with the low-profile DO-215AA package for automotive, industrial, and telecom systems demanding rugged overvoltage defense.

FAQ

What is the clamping voltage of SMBG8.0-E3/5B and under what test condition is it specified?

The SMBG8.0-E3/5B has a maximum clamping voltage (VC) of 13.6 V, measured at a peak pulse current (IPPM) of 44.1 A using the standardized 10/1000 µs double-exponential waveform. This value represents the worst-case voltage imposed on the protected circuit during a 600 W transient event, ensuring downstream components remain within safe operating limits.

Is SMBG8.0-E3/5B qualified to AEC-Q101, and how does it differ from the HE3 variant?

No, SMBG8.0-E3/5B carries the commercial-grade E3 suffix and is not AEC-Q101 qualified. The HE3 variant (e.g., SMBG8.0AHE3/5B) uses the same DO-215AA package and silicon die but undergoes additional stress testing per AEC-Q101. Both share identical electrical specs, but only HE3 is certified for automotive under-hood applications.

What is the reverse leakage current of SMBG8.0-E3/5B at its rated stand-off voltage?

At the specified stand-off voltage (VWM) of 8.0 V and ambient temperature of 25 °C, the SMBG8.0-E3/5B exhibits a maximum reverse leakage current (ID) of 1.0 µA. This ultra-low leakage ensures minimal impact on power rail stability and signal integrity in high-impedance or battery-powered circuits.

Can SMBG8.0-E3/5B be used in bi-directional protection applications?

No - SMBG8.0-E3/5B is a unidirectional TVS diode, identifiable by its cathode band marking. For bi-directional protection (e.g., AC lines or differential data buses), the CA-suffixed variant SMBG8.0CA-E3/5B must be used, which provides symmetrical clamping in both polarities with matched VBR and VC characteristics.

What is the thermal resistance and maximum junction temperature rating for SMBG8.0-E3/5B?

The SMBG8.0-E3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, and a maximum junction temperature (TJ) rating of +150 °C. These values define its safe operating area under repetitive surge conditions and high-ambient environments.

SMBG8.0-E3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-215AA, SMB Gull Wing
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
8V
Voltage - Breakdown (Min):
8.89V
Voltage - Clamping (Max) @ Ipp:
15V
Current - Peak Pulse (10/1000µs):
40A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBG)

SMBG8.0-E3/5B FAQ

1.How can I place an order for SMBG8.0-E3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBG8.0-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBG8.0-E3/5B reliable?

The price and inventory of SMBG8.0-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG8.0-E3/5B is usually 5 days.

3.What payment methods are accepted for SMBG8.0-E3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG8.0-E3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBG8.0-E3/5B?

SMBG8.0-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBG8.0-E3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBG8.0-E3/5B?

For technical support, including SMBG8.0-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG8.0-E3/5B requirements.

6.How does Aetrix verify that SMBG8.0-E3/5B is sourced from the original manufacturer or authorized distributors?

All SMBG8.0-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG8.0-E3/5B meets industry standards.

7.What is the process for return or replacement of SMBG8.0-E3/5B?

All SMBG8.0-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG8.0-E3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBG8.0-E3/5B part is unused and in its original packaging.

Return procedure for SMBG8.0-E3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBG8.0-E3/5B Tags

  • SMBG8.0-E3/5B
  • SMBG8.0-E3/5B PDF
  • SMBG8.0-E3/5B Datasheet
  • SMBG8.0-E3/5B Specifications
  • SMBG8.0-E3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBG8.0-E3/5B
  • Buy SMBG8.0-E3/5B
  • SMBG8.0-E3/5B Price
  • SMBG8.0-E3/5B Distributor
  • SMBG8.0-E3/5B Supplier
  • SMBG8.0-E3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER