Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBG8.5A-M3/5B

Part No.:
SMBG8.5A-M3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-215AA, SMB Gull Wing
Datasheet:
AetrixSMBG8.5A-M3/5B.pdf
Description:
TVS DIODE 8.5VWM 14.4VC DO215AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,930

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBG8.5A-M3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode designed for robust overvoltage protection in power and signal lines. It features a 8.5 V stand-off voltage (VWM), 9.44–10.4 V breakdown voltage (VBR) at 1 mA, 14.4 V clamping voltage (VC) at 20 A peak pulse current, and 600 W peak pulse power dissipation with a 10/1000 µs waveform - deployed in automotive sensor interfaces, industrial I/O modules, and DC power rail protection.

For engineers reviewing the SMBG8.5A-M3/5B datasheet, SMBG8.5A-M3/5B pinout, SMBG8.5A-M3/5B application, or SMBG8.5A-M3/5B equivalent, key selection criteria include unidirectional polarity, DO-215AA (SMBG) package compatibility, AEC-Q101 qualification, low clamping ratio (VC/VBR ≈ 1.45), and halogen-free RoHS compliance per M3 suffix.

Technical Context

This TVS diode operates as a clamping device that remains high-impedance below VWM = 8.5 V and rapidly transitions to low-impedance conduction above VBR = 9.44–10.4 V to divert surge energy. Its glass-passivated junction ensures stable avalanche characteristics and long-term reliability under repetitive transients.

Designed for surface-mount automated placement, it delivers 600 W peak pulse power handling with 0.01% duty cycle, 100 A non-repetitive forward surge rating (IFSM), and thermal resistance of RθJA = 100 °C/W on 5.0 mm × 5.0 mm copper pads - enabling use in space-constrained, thermally demanding environments.

Key Specifications

ParameterValue and Actual Design Meaning
VWM8.5 V - Maximum continuous reverse operating voltage before significant leakage; defines safe operating margin for 9–12 V nominal rails.
VBR @ IT = 1 mA9.44–10.4 V - Verified avalanche onset range; ensures predictable turn-on during ESD or load-dump events.
VC @ IPPM = 20 A14.4 V - Clamped voltage during 10/1000 µs surge; limits downstream IC stress to ≤14.4 V.
PPPM600 W - Peak pulse power capability; supports IEC 61000-4-5 Level 4 (4 kV/2 Ω) surge immunity when properly laid out.
IFSM100 A - Single half-sine surge rating (8.3 ms); withstands automotive load dump without failure.
Junction Temp Range–55 °C to +150 °C - Enables operation in under-hood automotive and industrial ambient conditions.
PackageSMBG (DO-215AA) - Standardized 2-pin gull-wing SMT footprint; compatible with IPC-7351B land patterns.

Pinout & Package

Package: SMBG (DO-215AA), surface-mount gull-wing, halogen-free, RoHS-compliant, AEC-Q101 qualified. Dimensions: 4.57 mm × 3.94 mm × 2.10 mm (L × W × H), cathode band marked on anode-side end.

Pin/TerminalCircuit RoleDesign Meaning
AnodeLow-side reference terminalConnected to ground or low-impedance return path; forms clamping loop with cathode.
CathodeProtected line inputConnected to the line being protected (e.g., 12 V supply or CAN_H); band denotes cathode end.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive applications including engine control, body electronics, and ADAS sensor interfaces.
600 W peak pulse power (10/1000 µs)Meets IEC 61000-4-5 surge immunity requirements for industrial and automotive equipment.
Low clamping voltage (14.4 V @ 20 A)Minimizes voltage overshoot on protected 9–12 V circuits, preserving MOSFET gate integrity and MCU I/O tolerance.
Glass passivated junctionEnsures stable VBR and low leakage (<1.0 µA at VWM) across temperature and lifetime.
Halogen-free, RoHS-compliant (M3 suffix)Complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-208 material restrictions.

Applications

Automotive Sensor ProtectionIndustrial Power Rail Clamp

Use Scenario: Protecting 12 V supply inputs to wheel speed sensors and ABS modules from ISO 7637-2 load dump pulses.

IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between VBAT and GND, shunting surge current away from linear regulators and Hall-effect ICs.

Use Value: Limits transient voltage to ≤14.4 V, preventing latch-up or permanent damage to 16 V-rated LDOs and microcontrollers.

Use Scenario: Safeguarding 24 V PLC I/O channels against inductive switching spikes from solenoid drivers.

IC Role / Device Role / Timing Role: Standoff-clamp TVS connected across field-side power terminals, activated within <1 ns to clamp 100 V+ transients.

Use Value: Maintains system uptime by absorbing 600 W surges without degradation, supporting >100,000 surge cycles per MIL-STD-883H Method 3015.8.

DC-DC Converter Input ProtectionUSB-C Power Delivery Line Clamp

Use Scenario: Front-end protection for buck converter inputs in battery-powered medical devices subjected to ESD and cable discharge events.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on 9–15 V input rail, coordinated with upstream fuse and downstream ceramic filtering.

Use Value: Achieves <1 ns response time and 14.4 V clamping, ensuring input stage MOSFETs remain within SOA during 8 kV contact ESD per IEC 61000-4-2.

Use Scenario: Secondary-level surge suppression on USB-C VBUS lines in docking stations exposed to hot-plug transients and ground bounce.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBUS and chassis ground, sized to handle 10/1000 µs surges up to 20 A.

Use Value: Prevents false overvoltage shutdown in PD controllers by limiting VBUS excursion to 14.4 V during 1 kV surge tests.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBG8.5A-E3/5BSame electrical specs; uses standard SnPb-free matte tin plating (E3), not halogen-free formulation.Approved for industrial but not AEC-Q101 automotive use; lacks halogen-free certification.Select when halogen-free requirement is waived and cost sensitivity outweighs automotive qualification.
SMBJ8.5A-M3/5BSame VWM, VBR, VC; differs in package (SMBJ = DO-214AB, larger footprint, higher PPPM = 600 W same, but higher IPPM rating).Requires PCB layout change due to larger 4.58 mm × 3.94 mm body and different pad geometry.Choose only if existing design uses SMBJ footprint or requires marginally higher surge current headroom (IPPM = 21.5 A vs. 20 A).

Compared with SMBG8.5A-E3/5B, the SMBG8.5A-M3/5B adds halogen-free compliance and AEC-Q101 qualification without sacrificing clamping performance; versus SMBJ8.5A-M3/5B, it offers identical protection specs in a smaller DO-215AA footprint, reducing board area by ~25% while maintaining full 600 W surge capability.

Availability

SMBG8.5A-M3/5B is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial PLC I/O protection, and DC-DC converter input clamping requiring stable component supply, AEC-Q101 validation, and halogen-free compliance.

Supply support for SMBG8.5A-M3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, automotive qualification, and high-volume manufacturability.

The SMBG series is engineered for surface-mount transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where compact size, AEC-Q101 compliance, and repeatable clamping performance are mandatory.

FAQ

What is the maximum clamping voltage of the SMBG8.5A-M3/5B under a 20 A surge?

The SMBG8.5A-M3/5B has a maximum clamping voltage (VC) of 14.4 V when subjected to a 10/1000 µs waveform at 20 A peak pulse current. This value is measured per the test condition specified in Vishay's datasheet Document Number 88456 and ensures protected circuitry remains within safe voltage limits during standardized surge events.

Is the SMBG8.5A-M3/5B suitable for automotive applications?

Yes, the SMBG8.5A-M3/5B is AEC-Q101 qualified and rated for operation from –55 °C to +150 °C, making it suitable for under-hood and body electronics applications. Its halogen-free (M3) construction and validated surge performance support compliance with automotive EMC and reliability standards including ISO 7637-2 and IEC 61000-4-5.

What does the "M3" suffix indicate in SMBG8.5A-M3/5B?

The "M3" suffix in SMBG8.5A-M3/5B denotes halogen-free, RoHS-compliant construction meeting JEDEC J-STD-208 requirements, along with matte tin-plated leads qualified per JESD 22-B102 whisker testing Class 2. It also signifies industrial-grade qualification - distinct from HE3/HM3 variants which add AEC-Q101 certification.

How does the SMBG8.5A-M3/5B differ from bidirectional TVS diodes like SMBG8.5CA?

The SMBG8.5A-M3/5B is unidirectional and intended for DC line protection with defined polarity (cathode marked), whereas SMBG8.5CA is bidirectional and used in AC or differential signal paths. The unidirectional version provides lower leakage (<1.0 µA at VWM) and avoids ambiguity in grounding configuration - critical for 12 V supply rail clamping where reverse conduction must be blocked.

What is the thermal resistance of the SMBG8.5A-M3/5B, and how does it affect PCB layout?

The SMBG8.5A-M3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain safe junction temperatures during repeated surges, designers must provide adequate copper area and avoid excessive trace length - especially for the cathode connection carrying peak surge current in the SMBG8.5A-M3/5B.

SMBG8.5A-M3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-215AA, SMB Gull Wing
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
8.5V
Voltage - Breakdown (Min):
9.44V
Voltage - Clamping (Max) @ Ipp:
14.4V
Current - Peak Pulse (10/1000µs):
41.7A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBG)

SMBG8.5A-M3/5B FAQ

1.How can I place an order for SMBG8.5A-M3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBG8.5A-M3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBG8.5A-M3/5B reliable?

The price and inventory of SMBG8.5A-M3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG8.5A-M3/5B is usually 5 days.

3.What payment methods are accepted for SMBG8.5A-M3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG8.5A-M3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBG8.5A-M3/5B?

SMBG8.5A-M3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBG8.5A-M3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBG8.5A-M3/5B?

For technical support, including SMBG8.5A-M3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG8.5A-M3/5B requirements.

6.How does Aetrix verify that SMBG8.5A-M3/5B is sourced from the original manufacturer or authorized distributors?

All SMBG8.5A-M3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG8.5A-M3/5B meets industry standards.

7.What is the process for return or replacement of SMBG8.5A-M3/5B?

All SMBG8.5A-M3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG8.5A-M3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBG8.5A-M3/5B part is unused and in its original packaging.

Return procedure for SMBG8.5A-M3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBG8.5A-M3/5B Tags

  • SMBG8.5A-M3/5B
  • SMBG8.5A-M3/5B PDF
  • SMBG8.5A-M3/5B Datasheet
  • SMBG8.5A-M3/5B Specifications
  • SMBG8.5A-M3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBG8.5A-M3/5B
  • Buy SMBG8.5A-M3/5B
  • SMBG8.5A-M3/5B Price
  • SMBG8.5A-M3/5B Distributor
  • SMBG8.5A-M3/5B Supplier
  • SMBG8.5A-M3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER