My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBG9.0A-E3/5B
- Part No.:
- SMBG9.0A-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AA, SMB Gull Wing
- Datasheet:
-
SMBG9.0A-E3/5B.pdf
- Description:
- TVS DIODE 9VWM 15.4VC DO215AA
- Quantity:
- Payment:
- Shipping:
Inventory:5,275
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBG9.0A-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMBG (DO-215AA) package, designed for clamping transient overvoltages on power and signal lines. It features a 9.0 V stand-off voltage (VWM), 10.0–11.1 V breakdown voltage (VBR) at 1.0 mA, 15.4 V maximum clamping voltage (VC) at 39.0 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial control systems.
For engineers reviewing the SMBG9.0A-E3/5B datasheet, SMBG9.0A-E3/5B pinout, SMBG9.0A-E3/5B application, or SMBG9.0A-E3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable leakage performance and fast response time (<1 ns), while the low Rsurge enables effective energy diversion during ESD or lightning-induced transients.
The SMBG9.0A-E3/5B is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), supports -55 °C to +150 °C operating range, and meets J-STD-020 MSL Level 1 with 260 °C reflow peak - confirming suitability for high-reliability automotive PCB assembly without moisture sensitivity concerns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 9.0 V - Maximum continuous reverse operating voltage before clamping begins; defines safe working margin below breakdown. |
| VBR (min/max) | 10.0 V / 11.1 V at 1.0 mA - Confirmed breakdown range ensures predictable turn-on across production lot and temperature. |
| VC @ IPPM | 15.4 V at 39.0 A - Clamping voltage under 600 W 10/1000 μs surge; limits downstream component stress during transient events. |
| PPPM | 600 W - Peak pulse power handling capacity; validates robustness against IEC 61000-4-5 Level 4 surges. |
| IFSM | 100 A - Single half-sine surge rating (8.3 ms); supports protection of power FETs during load dump conditions. |
| TJ max | +150 °C - Enables operation in under-hood automotive environments and thermally constrained industrial enclosures. |
| Leakage ID | 1.0 μA max at VWM - Ensures minimal standby power loss and signal integrity on low-current sensor lines. |
Pinout & Package
Package: SMBG (DO-215AA), surface-mount, gull-wing leads, matte tin-plated terminals solderable per J-STD-002 and JESD 22-B102. Polarity marked by cathode band on case end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection in unidirectional configuration | Connected to ground or return path; carries surge current during clamping event. |
| Cathode | High-side connection; marked with band | Connected to protected line (e.g., 12 V rail or CAN_H); defines directionality and clamping reference. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics use including engine control, body modules, and ADAS sensors. |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage over lifetime and thermal cycling. |
| MSL Level 1 (260 °C peak) | Enables single-reflow assembly without baking or special handling in high-volume SMT lines. |
| 600 W 10/1000 μs rating | Meets IEC 61000-4-5 surge immunity requirements for industrial and automotive equipment. |
| Low profile SMBG package | 0.235" × 0.130" footprint with 0.030" height - saves board space vs. larger DO-214 packages. |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V supply rails in vehicle body control modules from load dump and alternator transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamps voltage spikes above 9.0 V to limit stress on downstream DC/DC converters and microcontrollers. Use Value: Withstands 100 A surge (8.3 ms) and clamps to ≤15.4 V, preventing latch-up or permanent damage to 16 V-rated components. | Use Scenario: Shielding analog output lines of pressure or temperature sensors in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Fast-response TVS absorbs ESD (IEC 61000-4-2) and inductive switching noise on 4–20 mA or 0–10 V signal paths. Use Value: 1.0 μA max leakage at 9.0 V avoids measurement error; 15.4 V clamping preserves ADC input range and signal fidelity. |
| Consumer Power Adapter Input Stage | Telecom Ethernet Port Surge Protection |
Use Scenario: Secondary-side overvoltage suppression in AC/DC adapters for smart home hubs and IoT gateways. IC Role / Device Role / Timing Role: Standoff at 9.0 V allows normal 5–9 V DC operation while clamping lightning-induced surges on USB-C or barrel jack inputs. Use Value: 600 W rating handles repetitive surges from poor-quality mains; RoHS-compliant E3 suffix meets global regulatory requirements. | Use Scenario: Front-end protection for PoE-powered Ethernet PHYs in network switches and IP cameras. IC Role / Device Role / Timing Role: Placed between magnetics and PHY IC to clamp common-mode surges induced on twisted-pair cables. Use Value: Low capacitance (typ. <50 pF at 0 V) prevents signal integrity degradation at 100BASE-TX speeds; AEC-Q101 grade adds reliability margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ9.0A-E3/5B | Same VWM/VBR/VC, but SMBJ package (DO-214AA); 10% higher RθJA (110 °C/W vs. 100 °C/W). | Less thermal efficiency in high-density layouts; not AEC-Q101 qualified. | Select if legacy SMBJ footprint exists and automotive qualification is unnecessary. |
| 1.5SMC9.0A | Same electrical specs, but larger SMC (DO-214AB) package; higher IPPM (43.0 A) due to better thermal mass. | Requires more PCB area; not optimized for fine-pitch automated placement. | Prefer for high-energy surge environments where board space permits and thermal derating is critical. |
Compared with SMBJ9.0A-E3/5B and 1.5SMC9.0A, the SMBG9.0A-E3/5B offers superior thermal performance in compact layouts and certified automotive reliability - making it optimal for next-gen ECUs and space-constrained industrial controllers where both size and qualification matter.
Availability
SMBG9.0A-E3/5B is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor systems, and consumer power adapter designs requiring stable component supply, AEC-Q101 compliance, and high-volume SMT manufacturability.
Supply support for SMBG9.0A-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and automotive-grade qualification.
The SMBG series was engineered specifically for high-reliability transient suppression in space-constrained automotive and industrial applications - combining AEC-Q101 validation, low-profile packaging, and repeatable clamping performance across temperature and life cycle.
FAQ
What is the maximum clamping voltage of the SMBG9.0A-E3/5B under a 600 W surge?
The SMBG9.0A-E3/5B has a maximum clamping voltage (VC) of 15.4 V at 39.0 A peak pulse current, corresponding to the 600 W 10/1000 μs waveform. This value is measured per Fig. 1 in Vishay document 88456 and guarantees voltage limiting during standardized surge events - critical for protecting 16 V-tolerant ICs downstream. The SMBG9.0A-E3/5B maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is the SMBG9.0A-E3/5B suitable for automotive applications?
Yes, the SMBG9.0A-E3/5B is AEC-Q101 qualified (as confirmed in the "MECHANICAL DATA" section of Vishay document 88456), making it suitable for automotive powertrain, body electronics, and ADAS subsystems. Its MSL Level 1 rating, -55 °C to +150 °C operating range, and 100 A IFSM rating align with load-dump and ISO 7637-2 requirements. The SMBG9.0A-E3/5B is explicitly listed in Vishay's AEC-Q101-qualified product table with HE3/HM3 suffix variants.
What does the "E3/5B" suffix indicate in SMBG9.0A-E3/5B?
The "E3" suffix denotes RoHS-compliant, industrial-grade construction with matte tin-plated leads; "5B" specifies packaging in 13-inch diameter plastic tape and reel, with 3200 units per reel (per Vishay ordering table, page 3). This format supports high-speed pick-and-place assembly. The SMBG9.0A-E3/5B is distinct from HE3-suffixed versions, which add AEC-Q101 qualification - though the base E3 variant remains fully qualified per the datasheet's "Notes" section (Note 1 on page 3).
How does the SMBG9.0A-E3/5B compare to bidirectional TVS diodes like SMBG9.0CA?
The SMBG9.0A-E3/5B is unidirectional and intended for DC line protection where polarity is fixed (e.g., 12 V supply rails), whereas SMBG9.0CA is bidirectional for AC or differential signal lines (e.g., RS-485, CAN). Their VWM, VBR, and VC values differ: SMBG9.0CA has symmetric breakdown and no cathode marking. The SMBG9.0A-E3/5B provides lower leakage (1.0 μA vs. 2.0 μA for CA) and supports forward surge current - capabilities absent in bidirectional types.
What is the thermal resistance of the SMBG9.0A-E3/5B, and how does it affect layout design?
The SMBG9.0A-E3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal (document 88456, page 3). This value assumes minimum recommended pad layout - underscoring the need for adequate copper pour and thermal vias in high-surge applications. Exceeding 150 °C junction temperature risks parametric shift; the SMBG9.0A-E3/5B's RθJA is 10% lower than SMBJ equivalents, enabling tighter thermal design margins.
SMBG9.0A-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AA, SMB Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9V
- Voltage - Breakdown (Min):
- 10V
- Voltage - Clamping (Max) @ Ipp:
- 15.4V
- Current - Peak Pulse (10/1000µs):
- 39A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBG)
SMBG9.0A-E3/5B FAQ
1.How can I place an order for SMBG9.0A-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBG9.0A-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBG9.0A-E3/5B reliable?
The price and inventory of SMBG9.0A-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBG9.0A-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBG9.0A-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBG9.0A-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBG9.0A-E3/5B?
SMBG9.0A-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBG9.0A-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBG9.0A-E3/5B?
For technical support, including SMBG9.0A-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBG9.0A-E3/5B requirements.
6.How does Aetrix verify that SMBG9.0A-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBG9.0A-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBG9.0A-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBG9.0A-E3/5B?
All SMBG9.0A-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBG9.0A-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBG9.0A-E3/5B part is unused and in its original packaging.
Return procedure for SMBG9.0A-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBG9.0A-E3/5B Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
