My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ100AHE3/52
;;2.jpg)
- Part No.:
- SMBJ100AHE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ100AHE3/52.pdf
- Description:
- TVS DIODE 100VWM 162VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,648
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ100AHE3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 100 V stand-off voltage (VWM), 111–123 V breakdown voltage (VBR) at 1 mA, 162 V maximum clamping voltage (VC) at 3.7 A peak pulse current (IPPM), and 600 W peak pulse power capability with a 10/1000 µs waveform - deployed in industrial motor drives to protect gate drivers from inductive switching transients.
For engineers reviewing the SMBJ100AHE3/52 datasheet, SMBJ100AHE3/52 pinout, SMBJ100AHE3/52 application, or SMBJ100AHE3/52 equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 °C to +150 °C), and RoHS-compliant packaging details essential for automotive-grade ESD/surge design validation.
Technical Context
The SMBJ100AHE3/52 operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its breakdown threshold (VBR), thereby clamping transient energy into the PCB ground plane. Its glass-passivated junction ensures stable leakage performance (<1.0 µA at VWM) and fast response time (<1.0 ps), critical for suppressing sub-microsecond ESD events per IEC 61000-4-2.
Thermally, it uses a low-profile SMB package with RθJL = 20 °C/W (junction-to-lead), enabling effective heat dissipation during repetitive 0.01% duty-cycle surges. The device is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), supporting high-energy load dump protection in 24 V automotive systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 100 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin for 12–48 V systems. |
| VBR (min/max) | 111 V / 123 V at 1 mA - Confirmed breakdown range ensuring reliable turn-on without premature conduction under normal operation. |
| VC @ IPPM | 162 V at 3.7 A - Clamped voltage during 10/1000 µs surge; determines protected IC's voltage stress ceiling. |
| PPPM | 600 W - Peak pulse power handling capacity; supports single-event surge immunity per ISO 7637-2 Pulse 1/2b/5a. |
| TJ max. | +150 °C - Maximum junction temperature; enables operation in under-hood automotive environments. |
| RθJA | 100 °C/W - Thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs board-level thermal layout requirements. |
| AEC-Q101 | Qualified - Validated for automotive electronics per stress test requirements including HTGB, HTRB, and TCT. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking on cathode end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference node | Connected to protected line (e.g., 24 V supply rail); forms clamping path to ground via cathode during overvoltage. |
| Cathode | Clamping output / Surge current sink | Connected to system ground; carries full transient current during suppression; requires low-inductance ground trace. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables single-event protection against ISO 7637-2 Pulse 5a (load dump) up to 120 V in 24 V systems. |
| AEC-Q101 qualified | Validated for automotive under-hood use with guaranteed reliability across temperature cycling, humidity, and bias stress. |
| Glass passivated junction | Ensures stable VBR tolerance and <1.0 µA IR at VWM after 1000 hrs HTOL, critical for long-life industrial deployments. |
| MSL Level 1 (260 °C reflow) | Supports lead-free SMT assembly without moisture-induced popcorning; no bake required prior to reflow. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (e.g., EFT bursts), improving clamping precision for sensitive analog ICs. |
Applications
| Automotive Power Rail Protection | Industrial PLC I/O Protection |
|---|---|
|
Use Scenario: Suppressing load dump transients on 24 V battery-fed ECUs in commercial vehicles. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and DC-DC input, clamping spikes within 1 ns. Use Value: Limits voltage seen by downstream regulators to ≤162 V, preventing damage to 36 V-rated input stages. |
Use Scenario: Protecting 24 V digital input modules in factory automation PLCs from field-wiring induced surges. IC Role / Device Role / Timing Role: Front-end transient suppressor on isolated optocoupler inputs, absorbing IEC 61000-4-5 2 kV surges. Use Value: Maintains signal integrity by limiting clamp voltage below 162 V while surviving >1000 surge events per IEC 61000-4-5. |
| Telecom DC Power Feeds | Motor Drive Gate Driver Protection |
|
Use Scenario: Safeguarding -48 V telecom rectifier outputs against lightning-induced surges on outdoor cabinet feeds. IC Role / Device Role / Timing Role: Primary TVS on secondary-side DC bus, coordinated with upstream MOVs for staged protection. Use Value: Withstands 600 W pulses without degradation, ensuring uptime in remote base station power supplies. |
Use Scenario: Shielding IGBT gate driver ICs from Miller-induced voltage spikes during high-dI/dt switching in servo inverters. IC Role / Device Role / Timing Role: Local clamping diode across gate resistor, diverting transient current away from driver output stage. Use Value: Fast response (<1 ps) and low VC prevent false turn-on and gate oxide overstress in 650 V IGBTs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ100A-E3/52 | No AEC-Q101 qualification; commercial-grade only; identical electrical specs and SMB package. | Not suitable for automotive production; acceptable for industrial prototypes or cost-sensitive consumer designs. | Select when AEC-Q101 is not mandated and BOM cost reduction is prioritized. |
| SMBJ100CAHE3/52 | Bidirectional variant; symmetric VBR (111–123 V) in both polarities; same VWM, VC, and PPPM ratings. | Required for AC-coupled or floating signal lines (e.g., RS-485, CAN FD) where polarity reversal occurs. | Choose only if bidirectional clamping is needed; unidirectional SMBJ100AHE3/52 offers lower leakage in DC applications. |
Compared with SMBJ100A-E3/52, the SMBJ100AHE3/52 adds automotive-grade reliability without sacrificing clamping performance; versus SMBJ100CAHE3/52, it provides superior reverse leakage control (<1.0 µA vs. 2× higher for bidirectional types at VWM), making it optimal for precision DC rail protection.
Availability
SMBJ100AHE3/52 is available at Aetrix Electronics and suitable for automotive ECUs, industrial PLCs, telecom power systems, and motor drive gate driver circuits requiring stable component supply with AEC-Q101 assurance and RoHS compliance.
Supply support for SMBJ100AHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where failure resilience and long-term parametric stability are mandatory.
FAQ
What is the clamping voltage of SMBJ100AHE3/52 at its rated peak pulse current?
The SMBJ100AHE3/52 has a maximum clamping voltage (VC) of 162 V at 3.7 A peak pulse current (IPPM), measured using the standardized 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is confirmed in Vishay's datasheet Document Number 88392, page 2. The SMBJ100AHE3/52 maintains this clamping performance across its full operating temperature range (–55 °C to +150 °C).
Is SMBJ100AHE3/52 qualified for automotive applications?
Yes, SMBJ100AHE3/52 is AEC-Q101 qualified, as explicitly stated in the Vishay datasheet (Document Number 88392, page 3, footnote "(1) AEC-Q101 qualified"). This certification covers stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling (TCT). The HE3 suffix denotes RoHS-compliant and AEC-Q101 qualified construction, making SMBJ100AHE3/52 suitable for under-hood and chassis-mounted automotive electronics.
What is the standoff voltage (VWM) and why does it matter for SMBJ100AHE3/52?
The standoff voltage (VWM) of SMBJ100AHE3/52 is 100 V - the maximum DC or continuous reverse voltage the device can block without entering breakdown. This parameter ensures the SMBJ100AHE3/52 remains non-conductive during normal operation, minimizing leakage current (<1.0 µA) and avoiding unnecessary power loss or false triggering. It directly determines compatibility with 24 V and 48 V systems where transient margins must exceed nominal rail voltage by ≥2×.
How does the SMBJ100AHE3/52 package compare to SMA or SMC in terms of power handling?
The SMBJ100AHE3/52 uses the SMB (DO-214AA) package, which delivers 600 W peak pulse power - higher than SMA (DO-214AC, typically 400 W) but lower than SMC (DO-214AB, typically 1500 W). Its RθJA of 100 °C/W reflects moderate thermal performance, requiring adequate copper pad area (0.2" × 0.2") for full rating. Unlike SMC, SMB enables tighter board layouts; unlike SMA, SMBJ100AHE3/52 sustains higher surge energy without derating, making it optimal for space-constrained 24 V automotive modules.
Can SMBJ100AHE3/52 be used in bidirectional signal protection?
No - SMBJ100AHE3/52 is a unidirectional TVS diode, intended only for DC rail or polarity-defined signal line protection. For bidirectional applications such as RS-485, CAN, or AC-coupled sensors, the bidirectional variant SMBJ100CAHE3/52 must be used. Using SMBJ100AHE3/52 on bidirectional lines risks forward conduction during negative excursions, potentially damaging upstream drivers or violating signal integrity requirements. The cathode band marking on SMBJ100AHE3/52 confirms its unidirectional polarity.
SMBJ100AHE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 100V
- Voltage - Breakdown (Min):
- 111V
- Voltage - Clamping (Max) @ Ipp:
- 162V
- Current - Peak Pulse (10/1000µs):
- 3.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ100AHE3/52 FAQ
1.How can I place an order for SMBJ100AHE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ100AHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ100AHE3/52 reliable?
The price and inventory of SMBJ100AHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ100AHE3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ100AHE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ100AHE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ100AHE3/52?
SMBJ100AHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ100AHE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ100AHE3/52?
For technical support, including SMBJ100AHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ100AHE3/52 requirements.
6.How does Aetrix verify that SMBJ100AHE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ100AHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ100AHE3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ100AHE3/52?
All SMBJ100AHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ100AHE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ100AHE3/52 part is unused and in its original packaging.
Return procedure for SMBJ100AHE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ100AHE3/52 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
