Vishay General Semiconductor - Diodes Division SMBJ100AHE3/5B
- Part No.:
- SMBJ100AHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ100AHE3/5B.pdf
- Description:
- TVS DIODE 100VWM 162VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:9,948
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ100AHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 100 V standoff voltage (VWM), 111–123 V breakdown voltage (VBR) at 1 mA, 162 V maximum clamping voltage (VC) at 3.7 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in industrial motor drives, automotive ECUs, and telecom power supplies.
For engineers reviewing the SMBJ100AHE3/5B datasheet, SMBJ100AHE3/5B pinout, SMBJ100AHE3/5B application, or SMBJ100AHE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification (via HE3 suffix), 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on standard PCB pad layouts per JEDEC DO-214AA footprint.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 µA leakage at 100 V), but triggers into low-impedance conduction when transient voltage exceeds VBR, limiting downstream voltage to ≤162 V at 3.7 A. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive surge stress.
The device complies with ANSI/IEEE C62.35 for transient suppressors and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Thermal resistance is 100 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead), enabling effective power dissipation in compact layouts without heatsinking for single-event transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 100 V - Maximum continuous reverse operating voltage before significant leakage; defines safe DC rail protection threshold. |
| VBR (min/max) | 111 V / 123 V at 1 mA - Confirmed breakdown range ensures predictable turn-on during fast transients (e.g., ISO 7637-2 pulse 1/2a). |
| VC @ IPPM | 162 V at 3.7 A - Clamping voltage limits protected IC or MOSFET drain-source stress during 600 W surge events. |
| PPPM | 600 W - Peak pulse power handling with 10/1000 µs waveform supports IEC 61000-4-5 Level 4 compliance when properly laid out. |
| TJ max | +150 °C - Enables operation in under-hood automotive environments and industrial enclosures without derating. |
| Package | SMB (DO-214AA) - Standardized 2-pin surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height; compatible with IPC-7351B. |
| AEC-Q101 | Qualified - Validated for automotive electronics per stress test requirements including HTGB, HTRB, and TCT, indicated by HE3 suffix. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, UL 94 V-0 rated compound, cathode marked by band on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or low-potential node; completes clamping path during positive transients on cathode side. |
| Cathode | High-side transient input terminal | Connected to protected line (e.g., 12 V rail); absorbs energy by conducting to anode when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables suppression of high-energy transients such as load dump (ISO 16750-2) without thermal runaway in single-event scenarios. |
| 162 V clamping voltage at 3.7 A | Provides margin below 200 V absolute maximum ratings of common 100 V-rated power MOSFETs and gate drivers. |
| AEC-Q101 qualified (HE3 suffix) | Confirms suitability for automotive control modules requiring extended temperature cycling, humidity, and lifetime reliability validation. |
| MSL Level 1, 260 °C peak reflow | Supports lead-free assembly in high-volume SMT lines without moisture sensitivity concerns or baking requirements. |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage drift over 10+ years in industrial environments with thermal cycling. |
Applications
| Automotive Power Rail Protection | Industrial Motor Drive DC Bus |
|---|---|
|
Use Scenario: Protecting 12 V/24 V supply inputs in engine control units (ECUs) against load dump and jump-start surges. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between battery rail and system ground to clamp transients above 100 V. Use Value: Limits voltage seen by downstream PMICs and microcontrollers to ≤162 V, preventing latch-up or oxide damage during ISO 16750-2 Test Pulse 5a. |
Use Scenario: Safeguarding IGBT gate driver supply rails in variable-frequency drives exposed to inductive switching noise. IC Role / Device Role / Timing Role: TVS connected across +15 V gate supply and ground to absorb fast-rising dv/dt spikes from Miller capacitance coupling. Use Value: Fast response (<1 ps) and low clamping voltage ensure gate oxide integrity remains intact during repeated 600 W surge events. |
| Telecom DC Power Input | Consumer Appliance Main Board |
|
Use Scenario: Guarding PoE-powered equipment (e.g., IP cameras) against lightning-induced surges on 48 V input lines. IC Role / Device Role / Timing Role: Primary-level TVS on DC input before DC/DC converter, configured unidirectionally to avoid forward conduction during normal operation. Use Value: 100 V VWM allows full utilization of 48 V ±10 % input range while providing headroom for 100 V transients defined in IEC 61000-4-5. |
Use Scenario: Protecting microcontroller I/O lines and sensor interfaces in washing machines and HVAC controllers from ESD and relay coil flyback. IC Role / Device Role / Timing Role: Point-of-load TVS on 5 V/3.3 V logic rails, leveraging low leakage (<1 µA) to avoid loading sensitive analog sensors. Use Value: Glass-passivated junction maintains stable leakage performance across -40 °C to +85 °C ambient, ensuring consistent protection in varying cabinet temperatures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ100A-E3/5B | Commercial-grade (non-AEC-Q101), same VWM/VC/PPPM, RoHS-compliant but not automotive-qualified. | Approved for industrial and consumer use only; excluded from automotive production BOMs requiring AEC-Q101 traceability. | Select when cost sensitivity outweighs automotive qualification needs and environmental stress testing is not required. |
| SMAJ100AHE3/A | Same electrical specs but in smaller SMA (DO-214AC) package; 30 % lower PPPM (400 W), higher thermal resistance (150 °C/W). | Limited to lower-energy transients; unsuitable for load dump or high-dI/dt inverter applications due to reduced surge capacity. | Choose only for space-constrained designs where 400 W peak power suffices and thermal management permits higher RθJA. |
Compared with SMBJ100AHE3/5B, the E3/5B variant lacks AEC-Q101 validation and thus cannot support automotive qualification workflows, while the SMAJ100AHE3/A sacrifices 33 % peak power and thermal performance for footprint reduction - making SMBJ100AHE3/5B the optimal choice for demanding automotive and industrial surge environments.
Availability
SMBJ100AHE3/5B is available at Aetrix Electronics and suitable for automotive ECU design, industrial motor drive development, and telecom power supply prototyping requiring stable component supply and AEC-Q101 traceability.
Supply support for SMBJ100AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and automotive-grade qualification.
The SMBJ series is engineered for high-reliability transient suppression in harsh environments, targeting automotive, industrial, and telecom applications where robustness against ESD, EFT, and surge events is mission-critical.
FAQ
What is the clamping voltage of SMBJ100AHE3/5B at its rated peak pulse current?
The SMBJ100AHE3/5B has a maximum clamping voltage (VC) of 162 V at its specified peak pulse current (IPPM) of 3.7 A, measured using the standardized 10/1000 µs waveform. This value is critical for ensuring downstream components - such as 200 V-rated MOSFETs or 170 V-rated DC/DC controllers - remain within their absolute maximum voltage ratings during surge events. The SMBJ100AHE3/5B achieves this clamping performance while maintaining low incremental surge resistance, minimizing voltage overshoot beyond VC.
Is SMBJ100AHE3/5B suitable for automotive applications?
Yes, SMBJ100AHE3/5B is AEC-Q101 qualified, as confirmed by the "HE3" suffix in its part number, which denotes Vishay's automotive-grade qualification including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling tests. It is widely used in engine control units, body control modules, and ADAS power supplies where sustained operation from −40 °C to +125 °C ambient and immunity to load dump transients are required. The SMBJ100AHE3/5B meets these demands with its 150 °C maximum junction temperature and validated reliability data.
What does the "5B" in SMBJ100AHE3/5B indicate?
The "5B" suffix in SMBJ100AHE3/5B specifies the packaging configuration: 13-inch diameter plastic tape and reel, with a base quantity of 3200 units per reel. This format is optimized for high-speed automated pick-and-place assembly in volume manufacturing. The "HE3" portion confirms RoHS compliance and AEC-Q101 qualification, while "5B" distinguishes it from other reel options like "52" (7-inch reel, 750 units). No electrical or thermal differences exist between "5B" and "52" variants - only logistics and handling parameters differ.
How does SMBJ100AHE3/5B compare to bidirectional TVS diodes like SMBJ100CA?
SMBJ100AHE3/5B is unidirectional and intended for DC line protection where polarity is fixed (e.g., +12 V rail to ground), offering lower leakage and tighter VBR tolerance than bidirectional equivalents. In contrast, SMBJ100CA protects AC or polarity-agnostic lines but exhibits higher reverse leakage and symmetric clamping in both directions. For automotive 12 V systems, SMBJ100AHE3/5B is preferred due to its superior clamping consistency and compatibility with standard DC grounding schemes - unlike SMBJ100CA, which would conduct during normal negative excursions.
What is the thermal resistance of SMBJ100AHE3/5B, and how does it affect layout?
The SMBJ100AHE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead resistance (RθJL) of 20 °C/W, measured on 0.2" × 0.2" copper pads per terminal. These values mean that for a 5 W steady-state dissipation (not typical for TVS), junction temperature would rise ~500 °C above ambient - underscoring that SMBJ100AHE3/5B is designed for short-duration pulses, not continuous power. Layout best practices include using minimum 5.0 mm × 5.0 mm copper pads per terminal and avoiding thermal isolation to maintain specified surge capability. The SMBJ100AHE3/5B relies on transient thermal impedance, not steady-state cooling.
SMBJ100AHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 100V
- Voltage - Breakdown (Min):
- 111V
- Voltage - Clamping (Max) @ Ipp:
- 162V
- Current - Peak Pulse (10/1000µs):
- 3.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ100AHE3/5B FAQ
1.How can I place an order for SMBJ100AHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ100AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ100AHE3/5B reliable?
The price and inventory of SMBJ100AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ100AHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ100AHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ100AHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ100AHE3/5B?
SMBJ100AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ100AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ100AHE3/5B?
For technical support, including SMBJ100AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ100AHE3/5B requirements.
6.How does Aetrix verify that SMBJ100AHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ100AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ100AHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ100AHE3/5B?
All SMBJ100AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ100AHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ100AHE3/5B part is unused and in its original packaging.
Return procedure for SMBJ100AHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ100AHE3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)