My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ100AHM3/I
- Part No.:
- SMBJ100AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ100AHM3/I.pdf
- Description:
- TVS DIODE 100VWM 162VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,077
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ100AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 100 V stand-off voltage (VWM), 111–123 V breakdown voltage (VBR) at 1 mA, 162 V maximum clamping voltage (VC) at 3.7 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to safeguard MOSFETs, ICs, and sensor interfaces against inductive switching transients and ESD in industrial and telecom systems.
For engineers reviewing the SMBJ100AHM3/I datasheet, SMBJ100AHM3/I pinout, SMBJ100AHM3/I application, or SMBJ100AHM3/I equivalent, this page delivers verified electrical specs, thermal derating behavior, AEC-Q101 qualification status, halogen-free RoHS compliance, and real-world clamping performance data - critical for surge immunity validation and board-level reliability design.
Technical Context
The SMBJ100AHM3/I operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its VBR threshold (111–123 V), thereby clamping transient energy into ground. Its low incremental surge resistance and fast response time (<1 ns) ensure minimal overshoot during 10/1000 µs surges up to 3.7 A.
Thermally, it exhibits RθJA = 100 °C/W (typ.) on standard 0.2" × 0.2" copper pads and RθJL = 20 °C/W, enabling reliable operation up to TJ = +150 °C. The device is halogen-free, RoHS-compliant, and qualified to AEC-Q101 for automotive-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 100 V - Maximum continuous reverse operating voltage before conduction begins; defines safe DC rail margin. |
| VBR (min/max) | 111 V / 123 V at IT = 1 mA - Confirmed breakdown range ensures predictable turn-on under surge conditions. |
| VC @ IPPM | 162 V at 3.7 A - Clamped voltage during 10/1000 µs transient; determines protected circuit's maximum stress level. |
| PPPM | 600 W - Peak pulse power handling capability with 0.01% duty cycle; supports repetitive surge events. |
| IFSM | 100 A - Non-repetitive forward surge current rating (8.3 ms half-sine); validates robustness against inrush or fault currents. |
| TJ max. | +150 °C - Maximum junction temperature; enables use in high-ambient environments like motor drives and base stations. |
| Package | SMB (DO-214AA) - Surface-mount footprint with 5.59 mm × 4.06 mm body; compatible with automated placement and reflow. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; polarity indicated by cathode band on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference | Connected to lower-potential side (e.g., ground or return path); defines conduction direction during clamping. |
| Cathode | Reverse voltage input / Clamping node | Connected to protected line (e.g., 100 V rail); conducts avalanche current to anode when VREV > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables protection against high-energy transients such as ISO 7637-2 Pulse 1/2a/5a without derating beyond 0.01% duty cycle. |
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive applications including engine control units and ADAS sensors requiring extended temperature and life-cycle reliability. |
| Halogen-free & RoHS-compliant | Meets environmental compliance requirements for industrial and consumer electronics sold in EU, China, and North America. |
| Low clamping ratio (VC/VBR ≈ 1.46) | Minimizes overvoltage stress on downstream components - critical for protecting 100 V-rated MOSFETs and gate drivers. |
| MSL Level 1 (260 °C peak reflow) | Supports standard lead-free SMT assembly without moisture sensitivity concerns or pre-bake requirements. |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
|
Use Scenario: Protection of 100 V DC bus in servo drive inverters against inductive kickback from IGBT switching. IC Role / Device Role / Timing Role: Unidirectional TVS placed across DC link capacitor to clamp voltage spikes exceeding 100 V. Use Value: Limits transient overshoot to ≤162 V, preventing gate oxide failure in 120 V-rated SiC MOSFETs and ensuring IEC 61000-4-5 compliance. |
Use Scenario: Input-stage surge suppression on -48 V telecom rectifier outputs exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Standoff-rated TVS connected between output rail and chassis ground to absorb 6 kV/3 kA common-mode transients. Use Value: Maintains system uptime by limiting clamped voltage below 162 V while surviving ≥1000 surges per IEC 61000-4-5 Class 4 testing. |
| Automotive Body Control Modules | Industrial Sensor Signal Conditioning |
|
Use Scenario: Protection of LIN bus transceivers and microcontroller I/O pins in BCMs subjected to load dump and jump-start events. IC Role / Device Role / Timing Role: Unidirectional TVS on 12 V supply rail upstream of LDO regulators to prevent latch-up during 120 V/400 ms load dump. Use Value: Withstands 100 A IFSM, enabling direct placement without series fusing; AEC-Q101 qualification ensures 15-year field reliability. |
Use Scenario: Shielding analog front-end inputs of 4–20 mA loop-powered pressure sensors from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance TVS on signal line referenced to local ground to suppress ±8 kV contact ESD per IEC 61000-4-2. Use Value: Delivers sub-1 ns response and <1 µA leakage at 100 V, preserving signal integrity and minimizing offset drift in precision measurement circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ100AHE3/I | Same electrical specs but RoHS-compliant (not halogen-free); no AEC-Q101 qualification. | Limited to commercial-grade industrial and consumer applications where automotive reliability is not required. | Select when cost sensitivity outweighs halogen-free or automotive qualification needs. |
| SMAJ100A-M3/5B | Lower PPPM (400 W), smaller SMA package (DO-214AC), higher VC (170 V), same VWM/VBR. | Suitable for space-constrained PCBs with lower surge exposure; not rated for 600 W transients or automotive use. | Choose for compact designs with moderate surge risk and non-automotive lifecycle requirements. |
Compared with SMBJ100AHM3/I, SMBJ100AHE3/I lacks halogen-free content and AEC-Q101 validation, while SMAJ100A-M3/5B trades 33% lower pulse power and reduced thermal margin for 30% smaller footprint - making SMBJ100AHM3/I the optimal choice for high-reliability, high-energy, and automotive-critical protection.
Availability
SMBJ100AHM3/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, automotive body control modules, and industrial sensor signal conditioning requiring stable component supply, long-term lifecycle support, and traceable halogen-free sourcing.
Supply support for SMBJ100AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-power transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where clamping accuracy, surge endurance, and qualification rigor are mission-critical.
FAQ
What is the maximum clamping voltage of SMBJ100AHM3/I at its rated peak pulse current?
The SMBJ100AHM3/I has a maximum clamping voltage (VC) of 162 V at its specified peak pulse current (IPPM) of 3.7 A using the 10/1000 µs waveform. This value is measured under standardized test conditions per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events. Designers use this parameter to verify that downstream components remain within their absolute maximum ratings during transient suppression.
Is SMBJ100AHM3/I qualified for automotive applications?
Yes, SMBJ100AHM3/I is AEC-Q101 qualified, as confirmed by its HM3 suffix and documentation in Vishay's official datasheet (Document Number: 88392, Revision: 09-Jan-2024). This qualification covers stress tests including high-temperature operating life, temperature cycling, and ESD - validating its suitability for under-hood and chassis-mounted automotive electronics such as body control modules and power distribution units.
What does the "HM3" suffix indicate in SMBJ100AHM3/I?
The "HM3" suffix in SMBJ100AHM3/I denotes halogen-free, RoHS-compliant construction with AEC-Q101 qualification. Specifically, "H" indicates AEC-Q101 qualification, "M" signifies halogen-free molding compound, and "3" confirms RoHS compliance. This distinguishes it from E3 (RoHS only) and HE3 (AEC-Q101 + RoHS, but not halogen-free) variants - making SMBJ100AHM3/I compliant with strict environmental and automotive reliability standards simultaneously.
Can SMBJ100AHM3/I be used in bidirectional protection circuits?
No, SMBJ100AHM3/I is a unidirectional TVS diode, as indicated by its "A" suffix and cathode band marking. Bidirectional operation requires the "CA" suffix (e.g., SMBJ100CA). Using SMBJ100AHM3/I in a bidirectional configuration would result in forward conduction during negative transients, potentially damaging the device or failing to protect the circuit. Always match the device polarity to the expected transient direction and system grounding scheme.
What is the thermal resistance from junction to ambient for SMBJ100AHM3/I?
The typical thermal resistance from junction to ambient (RθJA) for SMBJ100AHM3/I is 100 °C/W when mounted on the minimum recommended pad layout (0.2" × 0.2" copper pads per terminal). This value assumes natural convection cooling and is critical for calculating junction temperature rise under steady-state power dissipation (PD = 5.0 W) or estimating safe surge repetition rates in thermally constrained layouts.
SMBJ100AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 100V
- Voltage - Breakdown (Min):
- 111V
- Voltage - Clamping (Max) @ Ipp:
- 162V
- Current - Peak Pulse (10/1000µs):
- 3.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ100AHM3/I FAQ
1.How can I place an order for SMBJ100AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ100AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ100AHM3/I reliable?
The price and inventory of SMBJ100AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ100AHM3/I is usually 5 days.
3.What payment methods are accepted for SMBJ100AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ100AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ100AHM3/I?
SMBJ100AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ100AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ100AHM3/I?
For technical support, including SMBJ100AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ100AHM3/I requirements.
6.How does Aetrix verify that SMBJ100AHM3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ100AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ100AHM3/I meets industry standards.
7.What is the process for return or replacement of SMBJ100AHM3/I?
All SMBJ100AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ100AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ100AHM3/I part is unused and in its original packaging.
Return procedure for SMBJ100AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ100AHM3/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
