Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ10AHE3_A/H

Part No.:
SMBJ10AHE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ10AHE3_A/H.pdf
Description:
TVS DIODE 10VWM 17VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,699

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ10AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping inductive switching transients and ESD events on power and signal lines. It features 10 V standoff voltage (VWM), 11.1–12.3 V breakdown voltage (VBR) at 1 mA, 17.0 V maximum clamping voltage (VC) at 35.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive body control modules, industrial sensor interfaces, and DC power input protection.

For engineers reviewing the SMBJ10AHE3_A/H datasheet, SMBJ10AHE3_A/H pinout, SMBJ10AHE3_A/H application, or SMBJ10AHE3_A/H equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (−55 to +150 °C), and packaging details for production-grade surge protection design.

Technical Context

This unidirectional TVS diode operates as a voltage-clamping device across DC rails or low-speed signal paths, triggering when reverse voltage exceeds its VBR threshold and limiting transient energy via low incremental surge resistance. Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1 ns), critical for protecting MOSFET gates and microcontroller I/O pins.

The SMBJ10AHE3_A/H is rated for 600 W peak pulse power under 10/1000 µs waveform with 0.01% duty cycle, derated above 25 °C per Fig. 2, and supports 100 A non-repetitive forward surge current (IFSM) for 8.3 ms half-sine wave - confirming suitability for automotive load-dump and inductive kickback suppression where high-energy transients occur infrequently.

Key Specifications

Parameter Value and Actual Design Meaning
VWM (Stand-off Voltage) 10 V - Maximum continuous reverse operating voltage before leakage exceeds 5 µA; defines safe DC bias margin for protected line.
VBR (Breakdown Voltage) 11.1–12.3 V at 1 mA - Confirmed minimum/maximum reverse breakdown threshold; ensures predictable turn-on during overvoltage events.
VC (Clamping Voltage) 17.0 V at 35.3 A (10/1000 µs) - Measured peak voltage across device during worst-case surge; determines maximum stress on downstream ICs.
PPPM (Peak Pulse Power) 600 W - Sustained energy absorption capability under standardized 10/1000 µs transient; validates robustness against ISO 7637-2 Pulse 1/2a/5a.
RθJA 100 °C/W - Junction-to-ambient thermal resistance on 0.2" × 0.2" copper pads; enables thermal budget calculation for PCB layout.
TJ max. +150 °C - Maximum allowable junction temperature; supports operation in under-hood automotive environments.
AEC-Q101 Qualified Yes - Validated for automotive applications per stress test requirements including HTGB, HTRB, and temperature cycling.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, MSL Level 1 (260 °C peak reflow), RoHS-compliant and halogen-free compliant per base P/NHE3 designation.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Transient current sink node Connected to protected line; conducts surge current to ground when VREV > VBR; polarity must match circuit grounding scheme.
Anode Reference/ground return path Typically tied to system ground plane; completes conduction path during clamping; requires low-inductance layout for effective suppression.

Key Features

Feature Design Value
600 W peak pulse power (10/1000 µs) Validates immunity to high-energy transients like ISO 16750-2 load dump without degradation over rated lifetime.
AEC-Q101 qualified (HE3 suffix) Confirms reliability for automotive ECUs, ADAS sensors, and infotainment systems requiring automotive-grade component validation.
Low clamping ratio (VC/VBR ≈ 1.45) Minimizes overvoltage overshoot during clamping, reducing risk of latch-up or gate oxide damage in protected MOSFETs and ICs.
Glass-passivated junction Ensures stable VBR tolerance and low leakage drift over temperature and life, critical for long-term field reliability.
MSL Level 1 moisture sensitivity Enables standard SMT assembly without baking or special handling, reducing manufacturing cost and process complexity.

Applications

Automotive Body Control Module (BCM) Industrial Sensor Signal Conditioning

Use Scenario: Protecting LIN bus transceivers and relay driver outputs from load-dump and inductive kickback in vehicle door modules.

IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between 12 V supply rail and ground, triggered within nanoseconds to limit voltage to ≤17.0 V.

Use Value: Prevents permanent damage to 3.3 V/5 V microcontrollers and LIN PHY ICs during 12 V system transients up to 600 W.

Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) of pressure/temperature sensors from ESD and cable discharge events.

IC Role / Device Role / Timing Role: Reverse-biased TVS on signal line to ground, absorbing ±8 kV contact ESD per IEC 61000-4-2 without affecting DC accuracy.

Use Value: Maintains sensor calibration integrity by limiting transient-induced offset shift and avoiding ADC saturation or reset.

DC Power Input Protection (12 V/24 V) Microcontroller GPIO Protection

Use Scenario: Front-end surge suppression for industrial PLC power supplies exposed to lightning-induced surges on long wiring runs.

IC Role / Device Role / Timing Role: Primary clamping device in series with fuse and common-mode choke; clamps 10/1000 µs transients to <17.0 V.

Use Value: Enables compliance with IEC 61000-4-5 Level 3 (2 kV line-earth) while preserving upstream rectifier and regulator reliability.

Use Scenario: Protecting STM32 or PIC microcontroller GPIO pins connected to external switches, buttons, or encoders in noisy factory environments.

IC Role / Device Role / Timing Role: Low-capacitance (typ. 190 pF at 0 V) unidirectional TVS shunting pin to ground, activated before internal ESD diodes conduct.

Use Value: Extends MCU field life by diverting >15 kV air-gap ESD away from silicon, preventing latent gate oxide wear or immediate failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ10AHM3_A/H Halogen-free variant with identical electrical specs and AEC-Q101 qualification; same SMB package and pinout. No functional difference; selected when halogen-free compliance is mandated by OEM or regional environmental regulations. Direct material substitution where RoHS + halogen-free requirement applies; no layout or validation change needed.
SMCJ10AHE3_A/H Same VWM, VBR, and VC, but in larger SMC (DO-214AB) package with 1500 W PPPM rating and lower RθJA (50 °C/W). Used where higher surge energy handling or improved thermal performance is required, e.g., main battery input vs. sub-circuit rail. Select when system-level surge testing exceeds 600 W or board space allows larger footprint for enhanced reliability margin.

Compared with SMBJ10AHE3_A/H, SMBJ10AHM3_A/H offers identical protection performance with halogen-free construction, while SMCJ10AHE3_A/H provides 2.5× higher pulse power and better thermal dissipation at the cost of larger PCB area - enabling tiered design choices based on environmental compliance and surge severity requirements.

Availability

SMBJ10AHE3_A/H is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and DC power input protection requiring stable component supply, AEC-Q101 qualification, and consistent surge immunity performance across production batches.

Supply support for SMBJ10AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and automotive-grade validation.

The SMBJ series is engineered for robust transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where precise clamping, low leakage, and AEC-Q101 compliance are mandatory.

FAQ

What is the clamping voltage of SMBJ10AHE3_A/H at its rated peak pulse current?

The SMBJ10AHE3_A/H has a maximum clamping voltage (VC) of 17.0 V at 35.3 A peak pulse current with a 10/1000 µs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream ICs remain within absolute maximum ratings. The SMBJ10AHE3_A/H maintains this clamping performance across its full operating temperature range.

Is SMBJ10AHE3_A/H qualified for automotive applications?

Yes, SMBJ10AHE3_A/H is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet 88392 (Revision 09-Jan-2024). This qualification covers stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling - validating its use in automotive body electronics, infotainment systems, and ADAS sensor modules where reliability under thermal and electrical stress is essential.

What is the standoff voltage and breakdown voltage range for SMBJ10AHE3_A/H?

The SMBJ10AHE3_A/H has a reverse standoff voltage (VWM) of 10 V and a breakdown voltage (VBR) range of 11.1 V to 12.3 V at 1 mA test current. This 1.1 V margin between VWM and minimum VBR ensures stable blocking during normal operation while guaranteeing reliable turn-on during transients - a key design parameter for selecting appropriate DC bias headroom in protected circuits.

Does SMBJ10AHE3_A/H have a bidirectional version?

No, SMBJ10AHE3_A/H is strictly unidirectional, indicated by the "A" suffix and cathode band marking. For bidirectional operation, Vishay offers SMBJ10CAHE3_A/H (with "CA" suffix), which provides symmetrical clamping in both polarities and is used in AC-coupled or floating signal line protection. The SMBJ10AHE3_A/H must be oriented correctly in-circuit with cathode toward the protected line to function as intended.

What package type and mounting specifications apply to SMBJ10AHE3_A/H?

SMBJ10AHE3_A/H uses the SMB (DO-214AA) surface-mount package with dimensions 4.57 mm × 3.94 mm × 2.20 mm and matte tin-plated leads. It meets J-STD-020 MSL Level 1 (peak reflow 260 °C), requires 0.2" × 0.2" copper pads per terminal for thermal and surge performance, and is compatible with standard automated pick-and-place and reflow processes - making it suitable for high-volume automotive and industrial manufacturing.

SMBJ10AHE3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
10V
Voltage - Breakdown (Min):
11.1V
Voltage - Clamping (Max) @ Ipp:
17V
Current - Peak Pulse (10/1000µs):
35.3A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ10AHE3_A/H FAQ

1.How can I place an order for SMBJ10AHE3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ10AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ10AHE3_A/H reliable?

The price and inventory of SMBJ10AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ10AHE3_A/H is usually 5 days.

3.What payment methods are accepted for SMBJ10AHE3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ10AHE3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ10AHE3_A/H?

SMBJ10AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ10AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ10AHE3_A/H?

For technical support, including SMBJ10AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ10AHE3_A/H requirements.

6.How does Aetrix verify that SMBJ10AHE3_A/H is sourced from the original manufacturer or authorized distributors?

All SMBJ10AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ10AHE3_A/H meets industry standards.

7.What is the process for return or replacement of SMBJ10AHE3_A/H?

All SMBJ10AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ10AHE3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ10AHE3_A/H part is unused and in its original packaging.

Return procedure for SMBJ10AHE3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ10AHE3_A/H Tags

  • SMBJ10AHE3_A/H
  • SMBJ10AHE3_A/H PDF
  • SMBJ10AHE3_A/H Datasheet
  • SMBJ10AHE3_A/H Specifications
  • SMBJ10AHE3_A/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ10AHE3_A/H
  • Buy SMBJ10AHE3_A/H
  • SMBJ10AHE3_A/H Price
  • SMBJ10AHE3_A/H Distributor
  • SMBJ10AHE3_A/H Supplier
  • SMBJ10AHE3_A/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER