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Vishay General Semiconductor - Diodes Division SMBJ10AHE3_A/I
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- Part No.:
- SMBJ10AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ10AHE3_A/I.pdf
- Description:
- TVS DIODE 10VWM 17VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,193
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Product details
Overview
SMBJ10AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 10 V stand-off voltage (VWM), 17.0 V maximum clamping voltage (VC) at 35.3 A peak pulse current (IPPM), and 600 W peak pulse power (PPPM) with 10/1000 µs waveform - deployed in automotive sensor interfaces, industrial I/O protection, and DC power rail conditioning.
For engineers reviewing the SMBJ10AHE3_A/I datasheet, SMBJ10AHE3_A/I pinout, SMBJ10AHE3_A/I application, or SMBJ10AHE3_A/I equivalent, this device serves as a primary overvoltage protection component where low clamping voltage, AEC-Q101 qualification, and robust 100 A IFSM surge capability are required in space-constrained PCB layouts.
Technical Context
The SMBJ10AHE3_A/I operates as a unidirectional avalanche diode, leveraging glass-passivated junction technology to deliver sub-nanosecond response time and stable breakdown behavior under repetitive transients. Its 11.1–12.3 V breakdown voltage (VBR) at 10 mA IT ensures precise triggering above nominal 10 V system rails while maintaining low leakage (<5.0 µA at VWM).
Thermally, it exhibits RθJA = 100 °C/W and RθJL = 20 °C/W, enabling reliable operation up to TJ = +150 °C when mounted per recommended 0.2" × 0.2" copper pads. The HE3 suffix confirms RoHS-compliance and AEC-Q101 qualification for automotive-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10 V - Maximum continuous reverse operating voltage before conduction begins; sets upper limit for protected circuit's normal operating range. |
| VBR (min/max) | 11.1 V / 12.3 V at 10 mA - Confirmed avalanche onset window ensuring consistent turn-on across production lots. |
| VC @ IPPM | 17.0 V at 35.3 A - Clamped voltage during 10/1000 µs surge; defines worst-case stress seen by downstream ICs. |
| PPPM | 600 W - Peak transient energy absorption capacity with standard 10/1000 µs waveform; validates compliance with IEC 61000-4-5 Level 3. |
| IFSM | 100 A - Non-repetitive forward surge rating (8.3 ms half-sine); supports inrush or fault-current handling in power supply inputs. |
| TJ max. | +150 °C - Maximum junction temperature; enables deployment in under-hood automotive environments and high-ambient industrial enclosures. |
| Package | SMB (DO-214AA) - Surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height; compatible with automated pick-and-place and reflow. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; cathode indicated by band marking on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Surge return path | Connected to ground or low-impedance return plane; completes clamping loop during transient events. |
| Cathode | Reverse-biased terminal / Protection node | Connected to protected line (e.g., 12 V rail or CAN_H); conducts when voltage exceeds VBR to shunt surge to ground. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control modules and ADAS sensor interfaces per stress test requirements. |
| 600 W peak pulse power | Withstands IEC 61000-4-5 10/1000 µs surges up to 4 kV (open-circuit) without degradation in clamping performance. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage stress on protected ICs - critical for 3.3 V or 5 V logic interfacing with 12 V systems. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles without preconditioning; eliminates moisture-related popcorning risk. |
| 100 A IFSM rating | Supports integration into DC input stages subject to load-dump or hot-swap events without fuse coordination dependency. |
Applications
| Automotive Body Control Module (BCM) | Industrial PLC Digital Input Card |
|---|---|
Use Scenario: Protecting LIN bus transceivers and microcontroller GPIOs from load-dump spikes and battery reversal transients in vehicle door modules. IC Role / Device Role / Timing Role: Unidirectional TVS placed between LIN line and ground, triggered within <1 ns to clamp voltages above 12 V nominal. Use Value: Prevents latch-up or permanent damage to 5 V tolerant transceivers during ISO 7637-2 Pulse 5a (load dump) events. |
Use Scenario: Safeguarding 24 V digital input channels against field-wiring induced surges and inductive kickback from solenoid drivers. IC Role / Device Role / Timing Role: Primary front-end clamp on optocoupler input side, conducting only during >10 V transients to preserve signal integrity. Use Value: Enables direct connection of field wiring without external series impedance, reducing BOM count and board area. |
| DC Power Supply Input Stage | Automotive Camera Module Power Rail |
Use Scenario: Secondary overvoltage protection on 12 V input of buck converter feeding infotainment subsystems. IC Role / Device Role / Timing Role: Fast-acting shunt element parallel to bulk capacitor, activated before upstream fuse opens during surge. Use Value: Limits input rail overshoot to ≤17 V during 10/1000 µs transients, preventing MOSFET gate oxide stress and controller reset. |
Use Scenario: Protecting image sensor and serializer ICs powered from vehicle battery via local LDO regulators. IC Role / Device Role / Timing Role: Localized TVS on 3.3 V or 5 V camera power domain, placed adjacent to connector to minimize inductance. Use Value: Maintains clean power during cold-crank and jump-start events, avoiding image corruption or sensor lockup. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ10AHM3_A/I | Halogen-free variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected only when halogen-free compliance is mandated by OEM material declarations. | Choose SMBJ10AHM3_A/I if RoHS + halogen-free certification (e.g., IEC 61249-2-21) is contractually required. |
| SMCJ10AHE3_A/I | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package; higher IPPM (52.5 A) and PPPM (1500 W). | Used where higher surge margin is needed (e.g., alternator output lines), but requires 30% more PCB area. | Choose SMCJ10AHE3_A/I only when 1500 W surge rating is essential and board space permits larger footprint. |
Compared with SMBJ10AHE3_A/I, the HM3 variant offers identical protection performance with halogen-free construction, while the SMCJ10AHE3_A/I delivers 2.5× higher surge capacity at the cost of increased size - selection depends strictly on mechanical constraints and environmental compliance requirements.
Availability
SMBJ10AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronics, industrial programmable logic controllers, and DC power supply designs requiring stable component supply with full AEC-Q101 traceability and long-term lifecycle support.
Supply support for SMBJ10AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, thermal performance, and automotive qualification.
The SMBJ series was engineered specifically for high-reliability transient suppression in automotive and industrial environments, balancing low clamping voltage, robust surge handling, and compact surface-mount form factor.
FAQ
What is the clamping voltage of SMBJ10AHE3_A/I at its rated peak pulse current?
The SMBJ10AHE3_A/I has a maximum clamping voltage (VC) of 17.0 V at its specified peak pulse current (IPPM) of 35.3 A using the 10/1000 µs waveform. This value is measured under standardized test conditions per JEDEC and IEC 61000-4-5, and represents the upper bound of voltage imposed on the protected circuit during a surge event. The SMBJ10AHE3_A/I maintains this clamping performance across its qualified temperature range and lifetime.
Is SMBJ10AHE3_A/I suitable for automotive applications?
Yes, SMBJ10AHE3_A/I is AEC-Q101 qualified and explicitly designated for automotive use in the Vishay datasheet. Its construction includes glass-passivated junctions, MSL Level 1 moisture sensitivity rating, and validation across temperature cycling, HTRB, and surge endurance tests required for under-hood and cabin modules. The HE3 suffix confirms RoHS compliance and automotive-grade traceability for SMBJ10AHE3_A/I.
How does SMBJ10AHE3_A/I differ from bidirectional variants like SMBJ10CA?
SMBJ10AHE3_A/I is unidirectional and intended for DC line protection where polarity is fixed (e.g., 12 V supply rails), with cathode marked for correct orientation. In contrast, SMBJ10CA is bidirectional and used on AC or differential lines (e.g., RS-485, CAN) where transients may occur in either polarity. SMBJ10AHE3_A/I has no reverse breakdown specification - it blocks in reverse until VBR is exceeded, whereas SMBJ10CA clamps symmetrically in both directions.
What is the maximum operating temperature for SMBJ10AHE3_A/I?
The SMBJ10AHE3_A/I has a maximum junction temperature (TJ max.) of +150 °C, verified per AEC-Q101 thermal testing protocols. This allows reliable operation in high-ambient environments such as engine compartments or sealed industrial enclosures. Derating curves in the datasheet show that at TA = 100 °C, the device retains ≥60% of its rated PPPM, confirming sustained performance in SMBJ10AHE3_A/I's target applications.
Does SMBJ10AHE3_A/I require a heatsink for standard operation?
No, SMBJ10AHE3_A/I is designed for surface-mount operation without external heatsinking under typical surge duty cycles (0.01% duty cycle per datasheet). Its thermal resistance junction-to-lead (RθJL = 20 °C/W) and junction-to-ambient (RθJA = 100 °C/W) assume mounting on minimum recommended 0.2" × 0.2" copper pads per terminal. Additional copper pour improves thermal performance but is not mandatory for SMBJ10AHE3_A/I's rated 600 W pulse handling.
SMBJ10AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.1V
- Voltage - Clamping (Max) @ Ipp:
- 17V
- Current - Peak Pulse (10/1000µs):
- 35.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ10AHE3_A/I FAQ
1.How can I place an order for SMBJ10AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ10AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ10AHE3_A/I reliable?
The price and inventory of SMBJ10AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ10AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ10AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ10AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ10AHE3_A/I?
SMBJ10AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ10AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ10AHE3_A/I?
For technical support, including SMBJ10AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ10AHE3_A/I requirements.
6.How does Aetrix verify that SMBJ10AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ10AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ10AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ10AHE3_A/I?
All SMBJ10AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ10AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ10AHE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ10AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ10AHE3_A/I Tags
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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