Vishay General Semiconductor - Diodes Division SMBJ10AHE3_B/H
- Part No.:
- SMBJ10AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ10AHE3_B/H.pdf
- Description:
- 600W,10V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:6,983
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ10AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 10 V stand-off voltage (VWM), 11.1–12.3 V breakdown voltage (VBR) at 1 mA, 17.0 V maximum clamping voltage (VC) at 35.3 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ10AHE3_B/H datasheet, SMBJ10AHE3_B/H pinout, SMBJ10AHE3_B/H application, or SMBJ10AHE3_B/H equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), and compliance with UL 497B for telecom and automotive electronics protection.
Technical Context
This TVS diode operates as a voltage-clamping device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold (VBR), limiting transient energy to safe levels for downstream components. Its glass-passivated junction ensures stable leakage performance and long-term reliability under repetitive surge stress.
Designed for automated SMT assembly, SMBJ10AHE3_B/H meets J-STD-020 MSL Level 1 (peak reflow ≤ 260 °C), has matte tin-plated leads compliant with JESD 22-B102, and supports 100 A non-repetitive forward surge current (IFSM) - enabling robust protection in DC power rails and low-voltage control circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10 V - maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 11.1 V / 12.3 V at IT = 1 mA - defines precise avalanche onset range for predictable protection threshold |
| VC @ IPPM | 17.0 V at 35.3 A - clamped voltage during 10/1000 µs surge, determining maximum stress on protected IC |
| PPPM | 600 W - peak transient power handling capability under standard IEC 61000-4-5 waveform |
| ID @ VWM | 5.0 µA max - low reverse leakage ensures minimal standby power loss in battery-powered systems |
| TJ max | +150 °C - enables operation in high-temperature environments such as engine control units |
| RθJA | 100 °C/W - thermal resistance from junction to ambient, critical for derating in enclosed PCB layouts |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with cathode band marking on anode-side end. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); terminals are matte tin-plated for solderability per J-STD-002.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to ground or lower-potential rail | Provides reference node for unidirectional clamping - must be tied to system ground for proper transient shunting |
| Cathode | Current exit point in forward bias; marked by band, connected to protected line | Connected to the line being protected (e.g., 12 V supply rail); conducts surge current to ground when V > VBR |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity testing, and mechanical shock per JESD22 standards |
| 600 W peak pulse power | Handles IEC 61000-4-5 Level 4 surges (4 kV line-to-earth) without degradation when mounted per recommended pad layout |
| Low clamping ratio (VC/VBR ≈ 1.5) | Minimizes overvoltage stress on protected devices - e.g., keeps 3.3 V logic inputs below absolute maximum ratings during transients |
| MSL Level 1 rating | Enables single-pass reflow without moisture-induced popcorning, eliminating pre-bake requirements in high-volume manufacturing |
| Glass-passivated junction | Ensures stable VBR and low leakage over 10+ years of field operation in humid industrial environments |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: 12 V battery-fed ECUs exposed to load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and local regulator to clamp transients before they reach LDOs or microcontrollers. Use Value: Limits peak voltage to ≤17.0 V during 35.3 A surge, preventing latch-up or gate oxide damage in downstream PMICs. |
Use Scenario: Analog output lines from pressure/temperature sensors in factory automation PLCs. IC Role / Device Role / Timing Role: TVS installed at connector interface to absorb ESD events (IEC 61000-4-2 ±8 kV contact) and cable discharge. Use Value: Sub-µA leakage at 10 V ensures no measurable offset error in 24-bit ADC front-ends. |
| Telecom DC Power Input Protection | Consumer USB Port Overvoltage Clamp |
Use Scenario: -48 V telecom rectifier outputs feeding PoE injectors and baseband processors. IC Role / Device Role / Timing Role: Reverse-biased TVS on primary side to suppress switching noise and lightning-induced surges entering via AC/DC transformer secondary. Use Value: 100 °C/W RθJA allows direct mounting on copper pour without heatsink, reducing BOM count in space-constrained modules. |
Use Scenario: VBUS line in USB 2.0 host ports subject to hot-plug induced transients and accidental 12 V misconnection. IC Role / Device Role / Timing Role: Clamping diode between VBUS and GND to limit voltage excursion to 17.0 V during fault conditions. Use Value: Fast response time (<1 ns) prevents data corruption in connected peripherals before USB enumeration completes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ10A-E3/52 | Commercial-grade version; not AEC-Q101 qualified; same electrical specs and SMB package | Lacks automotive qualification - suitable for consumer/industrial but not automotive Tier-1 designs | Select when cost sensitivity outweighs automotive compliance requirements |
| SMBJ10CAHE3_B/H | Bidirectional variant; symmetric VBR (11.1–12.3 V) in both directions; same PPPM and VC | Required for AC-coupled or floating signal lines where polarity reversal occurs (e.g., RS-485, CAN bus) | Choose only if bidirectional clamping is needed - unidirectional SMBJ10AHE3_B/H offers lower leakage in DC applications |
Compared with SMBJ10A-E3/52, SMBJ10AHE3_B/H adds AEC-Q101 qualification for automotive use without changing footprint or electrical behavior; compared with SMBJ10CAHE3_B/H, it provides lower ID (5.0 µA vs. 10 µA) in DC-biased applications due to unidirectional architecture.
Availability
SMBJ10AHE3_B/H is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, telecom power supplies, and consumer USB protection requiring stable component supply across multi-year production cycles.
Supply support for SMBJ10AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and high-volume manufacturability.
SMBJ series TVS diodes are engineered for board-level ESD and surge immunity in harsh environments - targeting automotive, industrial, and telecom applications where failure modes must be mitigated without adding complexity.
FAQ
What is the clamping voltage of SMBJ10AHE3_B/H at its rated peak pulse current?
The SMBJ10AHE3_B/H has a maximum clamping voltage (VC) of 17.0 V at 35.3 A peak pulse current (IPPM), measured using the standardized 10/1000 µs double-exponential waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is confirmed in the Vishay datasheet Document Number 88392, page 2. The SMBJ10AHE3_B/H maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is SMBJ10AHE3_B/H suitable for automotive applications?
Yes, SMBJ10AHE3_B/H is AEC-Q101 qualified, as indicated by the "HE3" suffix and confirmed in the Vishay ordering information table (page 3 of Document 88392). It undergoes rigorous stress testing including temperature cycling, highly accelerated life testing (HALT), and mechanical shock per JESD22 standards. This makes SMBJ10AHE3_B/H appropriate for under-hood and cabin modules in passenger vehicles and commercial vehicles where reliability under thermal and vibration stress is mandatory.
What is the difference between SMBJ10AHE3_B/H and SMBJ10A-E3/52?
The SMBJ10AHE3_B/H and SMBJ10A-E3/52 share identical electrical characteristics, SMB (DO-214AA) package, and RoHS compliance, but differ in qualification level: SMBJ10AHE3_B/H is AEC-Q101 qualified for automotive use, while SMBJ10A-E3/52 is commercial-grade only. Both use the same 7" tape-and-reel packaging (H code), but SMBJ10AHE3_B/H includes additional process controls and lot-level traceability required for automotive PPAP submissions.
Does SMBJ10AHE3_B/H have a bidirectional variant?
Yes, the bidirectional counterpart is SMBJ10CAHE3_B/H, which uses the "CA" suffix to denote symmetrical clamping in both polarities. Its breakdown voltage (VBR) is 11.1–12.3 V in either direction, matching the unidirectional SMBJ10AHE3_B/H's specification, and it shares the same 600 W PPPM rating and SMB package. However, SMBJ10CAHE3_B/H exhibits higher reverse leakage (10 µA vs. 5.0 µA) at VWM and is intended for AC signal lines like RS-485 or CAN, not DC power rails.
What is the thermal resistance of SMBJ10AHE3_B/H and how does it affect layout?
SMBJ10AHE3_B/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on the minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value means each watt of sustained power dissipation raises the junction temperature by 100 °C above ambient - so at 5.0 W rated power, TJ would reach 275 °C without derating. Engineers must apply thermal derating above TA = 25 °C per Figure 2 in the datasheet and ensure adequate copper area to maintain TJ ≤ 150 °C in real-world operation.
SMBJ10AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.1V
- Voltage - Clamping (Max) @ Ipp:
- 17V
- Current - Peak Pulse (10/1000µs):
- 35.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ10AHE3_B/H FAQ
1.How can I place an order for SMBJ10AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ10AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ10AHE3_B/H reliable?
The price and inventory of SMBJ10AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ10AHE3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ10AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ10AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ10AHE3_B/H?
SMBJ10AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ10AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ10AHE3_B/H?
For technical support, including SMBJ10AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ10AHE3_B/H requirements.
6.How does Aetrix verify that SMBJ10AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ10AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ10AHE3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ10AHE3_B/H?
All SMBJ10AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ10AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ10AHE3_B/H part is unused and in its original packaging.
Return procedure for SMBJ10AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ10AHE3_B/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

