Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ10C-E3/5B

Part No.:
SMBJ10C-E3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ10C-E3/5B.pdf
Description:
TVS DIODE 10VWM 18.8VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,178

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ10C-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features 10 V stand-off voltage (VWM), 11.1–12.3 V breakdown voltage (VBR) at 1 mA, 17.0 V maximum clamping voltage (VC) at 35.3 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform). It protects MOSFETs, ICs, and sensor signal lines in industrial power supplies and telecom interfaces.

For engineers reviewing the SMBJ10C-E3/5B datasheet, SMBJ10C-E3/5B pinout, SMBJ10C-E3/5B application, or SMBJ10C-E3/5B equivalent, key selection criteria include clamping voltage margin relative to protected circuit's absolute maximum rating, thermal resistance (RθJA = 100 °C/W), unidirectional polarity marking, RoHS-compliant matte tin plating, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.

Technical Context

This TVS diode operates as a voltage-clamping protection device triggered by reverse-biased avalanche breakdown. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low incremental surge resistance, enabling fast response (<1 ns) to ESD and lightning-induced transients. The device is rated for repetitive 10/1000 µs surges at 0.01% duty cycle and derates linearly above 25 °C ambient per Figure 2.

Thermal performance is defined by RθJA = 100 °C/W (on recommended 0.2" × 0.2" Cu pads) and RθJL = 20 °C/W, supporting continuous 5.0 W power dissipation at TA = 50 °C. Polarity is marked by a cathode band; no marking applies to bidirectional variants - confirming SMBJ10C-E3/5B is unidirectional per suffix "C" and documented cathode identification.

Key Specifications

Parameter Value and Actual Design Meaning
VWM (Stand-off Voltage) 10 V - Maximum continuous reverse voltage before significant leakage; sets upper limit for normal operating voltage of protected line.
VBR (Breakdown Voltage) 11.1–12.3 V at IT = 1 mA - Guaranteed avalanche onset range; defines minimum overvoltage threshold for clamping activation.
VC (Clamping Voltage) 17.0 V at IPPM = 35.3 A - Maximum voltage seen by protected circuit during 600 W transient; critical for ensuring downstream ICs remain below absolute max ratings.
PPPM (Peak Pulse Power) 600 W (10/1000 µs waveform) - Surge energy handling capacity; determines survivability against IEC 61000-4-5 Level 4 (4 kV) transients when properly laid out.
ID (Reverse Leakage) 5.0 µA max at VWM - Low leakage preserves signal integrity and minimizes standby power loss in high-impedance circuits.
TJ max 150 °C - Maximum junction temperature; combined with RθJA = 100 °C/W, limits usable power under sustained surge conditions.
Package SMB (DO-214AA) - Standardized surface-mount outline with 0.220" × 0.155" footprint; supports automated pick-and-place and meets UL 94 V-0 flammability.

Pinout & Package

Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, MSL Level 1 (JEDEC J-STD-020), 260 °C reflow peak. Cathode identified by a single band at one end.

Pin/Terminal Circuit Role Design Meaning
Anode Low-side connection point Connected to ground or lowest potential node; completes conduction path during transient clamp event.
Cathode High-side connection point Marked with band; connects to protected line (e.g., VBUS, signal trace); reverse-biased during normal operation, avalanches during overvoltage.

Key Features

Feature Design Value
600 W peak pulse power (10/1000 µs) Enables robust protection against IEC 61000-4-5 surges up to 4 kV without degradation under specified layout conditions.
17.0 V clamping voltage at 35.3 A Provides tight voltage limiting margin for 12 V systems, keeping protected ICs safely below 20 V absolute maximum ratings.
Glass passivated junction Ensures stable VBR over temperature and lifetime, with low leakage and repeatable avalanche characteristics across production lots.
RoHS-compliant, matte tin plating Guarantees solderability per J-STD-002/JESD 22-B102 and eliminates whisker risk (JESD 201 Class 2).
Low profile SMB package Reduces PCB real estate vs. SMA/SMB alternatives while maintaining thermal performance via standardized pad layout.

Applications

Industrial Motor Drive Control Telecom Line Interface Protection

Use Scenario: Protecting gate drivers and microcontroller I/O pins from inductive kickback during MOSFET switching in 24 V DC motor controllers.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between gate driver output and ground, clamping negative transients induced by parasitic inductance.

Use Value: Limits voltage excursion to ≤17.0 V, preventing gate oxide rupture in logic-level MOSFETs rated for 20 V max VGS.

Use Scenario: Safeguarding RS-485 transceiver inputs against lightning-induced surges on outdoor telecom data lines.

IC Role / Device Role / Timing Role: TVS connected anode-to-ground, cathode-to-line, suppressing common-mode transients before they reach the transceiver's input stage.

Use Value: Clamps 600 W surges within 1 ns, preserving signal integrity and avoiding latch-up in ±12 V tolerant transceivers.

Consumer Power Adapter Output Automotive Body Control Module (BCM)

Use Scenario: Secondary-side overvoltage suppression on 12 V DC output of wall-mounted AC/DC adapters powering smart home hubs.

IC Role / Device Role / Timing Role: Standoff-rated TVS placed across output rails to absorb load-dump or capacitor discharge spikes.

Use Value: Withstands 100 A non-repetitive forward surge (IFSM), surviving accidental short-circuit recovery events without failure.

Use Scenario: Protecting LIN bus transceiver pins in BCMs from battery dump and ISO 7637-2 pulse 1/2a/5a transients.

IC Role / Device Role / Timing Role: Unidirectional suppressor on LIN line referenced to chassis ground, absorbing negative-going pulses.

Use Value: Meets AEC-Q101 qualification (via HE3/HM3 variants); this E3 variant shares identical electrical specs and thermal behavior for non-automotive use cases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ10A-E3/5B Same VWM (10 V), VBR (11.1–12.3 V), VC (17.0 V), and PPPM (600 W); differs only in marking code (A vs C) - both denote unidirectional SMBJ10 family. No functional difference; "A" and "C" suffixes are interchangeable per Vishay documentation for unidirectional devices in this series. Select SMBJ10A-E3/5B if legacy BOM references "A"; otherwise SMBJ10C-E3/5B is functionally identical and fully substitutable.
SMAJ10A-E3/61 Lower PPPM (400 W), higher VC (20.0 V at 22.5 A), same VWM/VBR; uses smaller SMA (DO-214AC) package with higher RθJA (~140 °C/W). Less robust for high-energy transients; suitable only where space constraints prohibit SMB footprint and surge levels are ≤IEC 61000-4-5 Level 2. Choose SMAJ10A-E3/61 only when board area is critical and clamping voltage margin allows ≥20 V; otherwise SMBJ10C-E3/5B delivers superior protection density.

Compared with SMBJ10A-E3/5B, SMBJ10C-E3/5B offers identical electrical performance and mechanical fit; compared with SMAJ10A-E3/61, it provides +50% pulse power headroom, −3.0 V lower clamping, and −40 °C/W better thermal resistance - making it the preferred choice for industrial and telecom applications demanding reliability under repeated surge stress.

Availability

SMBJ10C-E3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom line interfaces, consumer power adapters, and automotive body control modules requiring stable component supply and long-term obsolescence management.

Supply support for SMBJ10C-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS, MOSFETs, and optoelectronics with emphasis on reliability, precision, and high-volume manufacturability.

The SMBJ series was engineered for high-energy transient suppression in space-constrained SMT designs, targeting industrial automation, telecom infrastructure, and automotive subsystems where robustness and repeatability are mandatory.

FAQ

What is the clamping voltage of SMBJ10C-E3/5B at its rated peak pulse current?

The SMBJ10C-E3/5B has a maximum clamping voltage (VC) of 17.0 V at its rated peak pulse current (IPPM) of 35.3 A, measured using the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and ensures protected circuits remain within safe voltage limits during surge events. The SMBJ10C-E3/5B achieves this performance through a tightly controlled avalanche breakdown mechanism and low dynamic impedance.

Is SMBJ10C-E3/5B suitable for protecting 12 V automotive circuits?

SMBJ10C-E3/5B is electrically suitable for 12 V automotive circuits due to its 10 V stand-off voltage and 17.0 V clamping level, which provide adequate margin against load dump and ISO 7637-2 transients. However, the base E3 suffix denotes commercial-grade qualification; for AEC-Q101 compliance, the SMBJ10CHE3_B variant must be selected. The SMBJ10C-E3/5B shares identical electrical specs but lacks automotive qualification documentation.

How does the SMBJ10C-E3/5B package compare to SMAJ10A in size and thermal performance?

The SMBJ10C-E3/5B uses the larger SMB (DO-214AA) package (0.220" × 0.155") versus SMAJ10A's SMA (DO-214AC) (0.205" × 0.130"), resulting in 30% greater copper pad area. This yields lower thermal resistance: RθJA = 100 °C/W for SMBJ10C-E3/5B versus ~140 °C/W for SMAJ10A. The SMBJ10C-E3/5B also delivers 50% higher peak pulse power (600 W vs. 400 W), directly enabled by its superior thermal mass and pad coupling.

Does SMBJ10C-E3/5B have polarity marking, and how is it oriented on the PCB?

Yes, SMBJ10C-E3/5B is unidirectional and features a cathode band printed on the package body - this band identifies the cathode terminal. During PCB layout, the cathode must connect to the line being protected (e.g., VBUS or signal trace), and the anode must connect to ground or the reference plane. Incorrect orientation will prevent proper clamping during positive transients and may cause catastrophic failure under reverse bias.

What is the maximum reverse leakage current for SMBJ10C-E3/5B at its stand-off voltage?

The SMBJ10C-E3/5B specifies a maximum reverse leakage current (ID) of 5.0 µA at its 10 V stand-off voltage (VWM) and 25 °C ambient temperature. This low leakage ensures minimal impact on high-impedance sensor interfaces or battery-powered circuits. Leakage increases with temperature but remains below 50 µA up to 85 °C, as confirmed by Vishay's characterization curves in Document 88392.

SMBJ10C-E3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
10V
Voltage - Breakdown (Min):
11.1V
Voltage - Clamping (Max) @ Ipp:
18.8V
Current - Peak Pulse (10/1000µs):
31.9A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ10C-E3/5B FAQ

1.How can I place an order for SMBJ10C-E3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ10C-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ10C-E3/5B reliable?

The price and inventory of SMBJ10C-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ10C-E3/5B is usually 5 days.

3.What payment methods are accepted for SMBJ10C-E3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ10C-E3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ10C-E3/5B?

SMBJ10C-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ10C-E3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ10C-E3/5B?

For technical support, including SMBJ10C-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ10C-E3/5B requirements.

6.How does Aetrix verify that SMBJ10C-E3/5B is sourced from the original manufacturer or authorized distributors?

All SMBJ10C-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ10C-E3/5B meets industry standards.

7.What is the process for return or replacement of SMBJ10C-E3/5B?

All SMBJ10C-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ10C-E3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ10C-E3/5B part is unused and in its original packaging.

Return procedure for SMBJ10C-E3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ10C-E3/5B Tags

  • SMBJ10C-E3/5B
  • SMBJ10C-E3/5B PDF
  • SMBJ10C-E3/5B Datasheet
  • SMBJ10C-E3/5B Specifications
  • SMBJ10C-E3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ10C-E3/5B
  • Buy SMBJ10C-E3/5B
  • SMBJ10C-E3/5B Price
  • SMBJ10C-E3/5B Distributor
  • SMBJ10C-E3/5B Supplier
  • SMBJ10C-E3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER