Vishay General Semiconductor - Diodes Division SMBJ110AHE3/52
- Part No.:
- SMBJ110AHE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ110AHE3/52.pdf
- Description:
- TVS DIODE 110VWM 177VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:6,063
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ110AHE3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 110 V stand-off voltage (VWM), 122–135 V breakdown voltage (VBR) at 1 mA, 177 V maximum clamping voltage (VC) at 3.4 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in industrial motor drives, telecom power supplies, and automotive body control modules.
For engineers reviewing the SMBJ110AHE3/52 datasheet, SMBJ110AHE3/52 pinout, SMBJ110AHE3/52 application, or SMBJ110AHE3/52 equivalent, key selection criteria include clamping performance under 3.4 A surge, unidirectional polarity with cathode band marking, AEC-Q101 qualification status, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when transient voltage exceeds VBR, it avalanches into low-impedance conduction to divert surge current away from downstream ICs or MOSFETs. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive transients.
Thermal design relies on RθJA = 100 °C/W (typ.) and RθJL = 20 °C/W (typ.), requiring minimum 0.2" × 0.2" copper pad per terminal for rated 600 W pulse handling. The device is rated for -55 °C to +150 °C operating junction temperature and meets MSL Level 1 per J-STD-020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - Maximum continuous reverse working voltage before leakage exceeds 1 µA; defines safe DC rail operating margin. |
| VBR (min/max) | 122 V / 135 V at IT = 1 mA - Confirmed avalanche onset range; ensures predictable turn-on during transients. |
| VC @ IPPM | 177 V at 3.4 A - Clamped voltage seen by protected circuit during full-rated 600 W surge; determines residual stress on downstream components. |
| PPPM | 600 W - Peak pulse power dissipation capability with 10/1000 µs waveform; validates protection against IEC 61000-4-5 Level 4 surges. |
| IFSM | 100 A - Non-repetitive forward surge current rating (8.3 ms half-sine); supports protection against inductive switch-off events. |
| TJ max. | +150 °C - Maximum junction temperature; enables operation in under-hood automotive or high-ambient industrial environments. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC specification. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode identified by black band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Surge return path | Connected to ground or low-impedance return plane; carries full transient current during clamping. |
| Cathode | Reverse-biased terminal / Protection reference | Connected to protected line (e.g., 110 V rail); defines VWM and VBR thresholds relative to this node. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Validates immunity to severe lightning-induced surges per IEC 61000-4-5, enabling single-device protection without external series impedance. |
| AEC-Q101 qualified (HE3 suffix) | Confirms suitability for automotive applications including BCM, ADAS power domains, and infotainment supply rails without additional qualification effort. |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage drift over temperature and lifetime - critical for long-term field reliability. |
| MSL Level 1 (260 °C peak reflow) | Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (<1 ns), improving protection margin for sensitive gate drivers and ADC inputs. |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
Use Scenario: Protection of 110 V DC bus against switching transients from IGBT gate drive coupling and contactor bounce. IC Role / Device Role / Timing Role: Shunt clamping TVS placed directly across bus rails to limit voltage excursions below MOSFET VDSS rating. Use Value: Limits clamped voltage to 177 V, providing 13 V margin below common 190 V rated power MOSFETs and preventing cumulative gate oxide stress. |
Use Scenario: Input-stage surge suppression on 110 V telecom rectifier outputs exposed to AC line transients and hot-swap events. IC Role / Device Role / Timing Role: Unidirectional TVS referenced to system ground, absorbing positive-going surges while blocking normal 110 V DC reverse bias. Use Value: Withstands 100 A IFSM and maintains <1 µA leakage at 110 V, ensuring no load impact during steady-state operation. |
| Automotive Body Control Modules | Industrial PLC I/O Modules |
Use Scenario: Protection of LIN bus power pins and microcontroller supply inputs in BCMs subjected to load dump and jump-start conditions. IC Role / Device Role / Timing Role: AEC-Q101-qualified unidirectional TVS placed at power entry point to clamp transients before LDO regulators. Use Value: 150 °C TJ max. and validated thermal impedance enable reliable operation in sealed, high-temperature engine bay enclosures. |
Use Scenario: Field-side protection of analog input channels (e.g., 4–20 mA loops) connected to 110 V auxiliary power in factory automation systems. IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) TVS mounted adjacent to connector to prevent false triggering of precision current-sense amplifiers. Use Value: Tight VBR tolerance (122–135 V) ensures consistent clamping onset across production lots, reducing calibration drift risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110AHM3/52 | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected where halogen-free compliance is mandated by OEM environmental policy. | Direct material substitution when halogen-free requirement applies; same footprint, thermal, and electrical behavior. |
| SMCJ110AHE3/52 | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package with 1500 W PPPM and higher IPPM (7.5 A). | Used where higher surge energy (e.g., outdoor telecom cabinets) demands >600 W rating and board space permits larger footprint. | Select only if 1500 W surge capacity is required; not drop-in due to larger package and different pad layout. |
Compared with SMBJ110AHE3/52, SMBJ110AHM3/52 offers identical protection performance with halogen-free construction, while SMCJ110AHE3/52 provides higher surge capacity at the cost of increased PCB area and thermal mass - choice depends strictly on environmental compliance mandates or surge energy budget requirements.
Availability
SMBJ110AHE3/52 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, automotive body control modules, and PLC I/O modules requiring stable component supply with AEC-Q101 validation and RoHS compliance.
Supply support for SMBJ110AHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade qualification.
The SMBJ series is engineered for high-energy transient suppression in space-constrained applications, targeting automotive, industrial, and telecom systems where robustness, AEC-Q101 compliance, and precise clamping are mandatory.
FAQ
What is the clamping voltage of SMBJ110AHE3/52 at its rated peak pulse current?
The SMBJ110AHE3/52 has a maximum clamping voltage (VC) of 177 V at its rated peak pulse current of 3.4 A (10/1000 µs waveform). This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuits during full-rated surge events. The SMBJ110AHE3/52 maintains this clamping performance across its qualified temperature range and after multiple surge cycles, supporting design margin calculations for downstream components.
Is SMBJ110AHE3/52 suitable for automotive applications?
Yes, SMBJ110AHE3/52 is AEC-Q101 qualified, confirming its reliability for automotive use cases including body control modules, infotainment power rails, and ADAS sensor supply lines. The HE3 suffix explicitly denotes AEC-Q101 qualification, and the device undergoes stress testing for temperature cycling, high-temperature reverse bias, and ESD per the AEC standard. SMBJ110AHE3/52 operates up to +150 °C junction temperature, meeting under-hood thermal requirements without derating.
What does the "HE3" suffix indicate in SMBJ110AHE3/52?
The "HE3" suffix in SMBJ110AHE3/52 indicates RoHS-compliant construction with AEC-Q101 qualification. It distinguishes this variant from commercial-grade E3 (RoHS only) and HM3 (halogen-free + RoHS + AEC-Q101) versions. The HE3 marking confirms that SMBJ110AHE3/52 meets automotive reliability standards while maintaining the same electrical specifications, package dimensions, and thermal characteristics as other SMBJ110A variants.
How does SMBJ110AHE3/52 differ from bidirectional TVS diodes like SMBJ110CA?
SMBJ110AHE3/52 is unidirectional and features a cathode band marking, allowing it to block reverse voltage up to 110 V while clamping positive transients. In contrast, SMBJ110CA is bidirectional with symmetric clamping in both polarities and no polarity marking. SMBJ110AHE3/52 exhibits lower leakage (<1 µA at VWM) and is preferred for DC rail protection, whereas SMBJ110CA suits AC-coupled signal lines or differential buses where polarity reversal occurs.
What PCB layout guidance applies to SMBJ110AHE3/52 for optimal surge handling?
For rated 600 W pulse performance, SMBJ110AHE3/52 must be mounted on minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, per Vishay's datasheet fig. 2 and note (2). Traces to the device should be short and wide to minimize inductance, and ground connections must provide low-impedance return paths. Thermal vias under pads improve heat dissipation during repetitive surges. The SMBJ110AHE3/52 package (DO-214AA) requires standard SMT reflow profiles compliant with MSL Level 1.
SMBJ110AHE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 177V
- Current - Peak Pulse (10/1000µs):
- 3.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ110AHE3/52 FAQ
1.How can I place an order for SMBJ110AHE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ110AHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ110AHE3/52 reliable?
The price and inventory of SMBJ110AHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110AHE3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ110AHE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110AHE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ110AHE3/52?
SMBJ110AHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ110AHE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ110AHE3/52?
For technical support, including SMBJ110AHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110AHE3/52 requirements.
6.How does Aetrix verify that SMBJ110AHE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ110AHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110AHE3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ110AHE3/52?
All SMBJ110AHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110AHE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ110AHE3/52 part is unused and in its original packaging.
Return procedure for SMBJ110AHE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ110AHE3/52 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)