Vishay General Semiconductor - Diodes Division SMBJ110AHE3/5B
- Part No.:
- SMBJ110AHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ110AHE3/5B.pdf
- Description:
- TVS DIODE 110VWM 177VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:8,058
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ110AHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 110 V standoff voltage (VWM), 122–135 V breakdown range (VBR at 1 mA), 177 V maximum clamping voltage (VC) at 3.4 A peak pulse current, and 600 W peak pulse power rating per 10/1000 µs waveform - deployed in industrial motor drives, telecom power supplies, and automotive ECUs.
For engineers reviewing the SMBJ110AHE3/5B datasheet, SMBJ110AHE3/5B pinout, SMBJ110AHE3/5B application, or SMBJ110AHE3/5B equivalent, key selection criteria include clamping performance under 3.4 A surge, thermal resistance (RθJA = 100 °C/W), AEC-Q101 qualification status, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its specified VBR range (122–135 V). Its low incremental surge resistance ensures stable clamping during transient events, while the glass-passivated junction delivers fast response time (<1 ps) and repeatable performance across temperature.
Designed for mounting on standard 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads, it supports repetitive surge duty cycles up to 0.01 % and withstands peak forward surge current (IFSM) of 100 A (8.3 ms half-sine). The HE3 suffix confirms RoHS-compliance and AEC-Q101 qualification for automotive-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - Maximum continuous reverse operating voltage before conduction begins; defines safe DC rail margin. |
| VBR (min/max) | 122 V / 135 V at 1 mA - Breakdown onset range; determines minimum overvoltage threshold for clamping activation. |
| VC @ IPPM | 177 V at 3.4 A - Clamped voltage during 10/1000 µs surge; sets worst-case stress on downstream ICs. |
| PPPM | 600 W - Peak pulse power handling capability; enables protection against IEC 61000-4-5 Level 4 surges. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance; requires ≥5.0 mm × 5.0 mm copper pad for rated derating. |
| IFSM | 100 A - Non-repetitive forward surge rating (8.3 ms); supports inrush current suppression in power supply inputs. |
| TJ max. | +150 °C - Maximum junction temperature; allows operation in under-hood automotive environments. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when VREV > VBR. |
| Anode (unmarked end) | Reference node | Typically tied to system ground or lower-potential rail; completes clamping path during overvoltage event. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and body electronics per stress test requirements. |
| 600 W peak pulse power (10/1000 µs) | Withstands high-energy transients common in 24 V industrial and automotive power systems without degradation. |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes voltage overshoot across protected ICs, reducing risk of latch-up or gate oxide damage in MOSFETs. |
| MSL Level 1 (260 °C peak reflow) | Compatible with standard lead-free SMT reflow profiles without moisture sensitivity concerns. |
| Glass passivated junction | Ensures stable leakage current (<1 µA at VWM) and long-term reliability under thermal cycling. |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
Use Scenario: Protection of 48 V DC bus against switching transients from IGBT gate drivers and relay coils. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus rail and ground to limit voltage spikes to <177 V. Use Value: Prevents catastrophic failure of isolated DC-DC controllers and current sense amplifiers during load dump events. |
Use Scenario: Input-stage surge suppression on -48 V telecom rectifier outputs exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Primary overvoltage clamp absorbing IEC 61000-4-5 Combination Wave energy before downstream regulators. Use Value: Maintains system uptime by limiting transient-induced brownouts and preventing reset of base station management ICs. |
| Automotive Body Control Modules | Consumer Appliance Power Inputs |
Use Scenario: Protection of LIN bus transceivers and microcontroller I/O pins against battery reverse polarity and load dump. IC Role / Device Role / Timing Role: Unidirectional TVS connected between LIN line and chassis ground to clamp negative transients. Use Value: Enables compliance with ISO 7637-2 Pulse 1/2a/5a test requirements without additional series impedance. |
Use Scenario: AC/DC adapter input stage protection against mains-borne surges in washing machines and HVAC controls. IC Role / Device Role / Timing Role: Clamp on primary-side rectified DC link to suppress differential-mode transients before bulk capacitor. Use Value: Reduces field failure rate by eliminating surge-induced MOSFET avalanche breakdown in SMPS controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110AHM3/5B | Halogen-free, RoHS-compliant, AEC-Q101 qualified - identical electrical specs but different material composition. | No functional difference; selected where halogen-free compliance is mandated by OEM environmental policy. | Choose SMBJ110AHM3/5B if halogen-free materials are required; otherwise SMBJ110AHE3/5B satisfies standard automotive and industrial needs. |
| SMCJ110AHE3/5B | Same VWM/VBR/VC, but in larger SMC (DO-214AB) package with higher PPPM (1500 W) and lower RθJA (50 °C/W). | Better thermal performance and surge margin; requires larger PCB footprint and different pad layout. | Choose SMCJ110AHE3/5B only when 600 W is insufficient or board layout allows larger package; SMBJ110AHE3/5B optimizes space-constrained designs. |
Compared with SMBJ110AHM3/5B, SMBJ110AHE3/5B offers identical protection performance with standard RoHS compliance; versus SMCJ110AHE3/5B, it trades 900 W lower peak power for 40 % smaller footprint and compatibility with dense SMT layouts.
Availability
SMBJ110AHE3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, automotive body control modules, and consumer appliance power inputs requiring stable component supply and AEC-Q101 traceability.
Supply support for SMBJ110AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series targets compact, high-reliability transient suppression in space-constrained DC power and signal interfaces - engineered for automotive, industrial, and telecom systems demanding AEC-Q101 validation and consistent clamping behavior.
FAQ
What is the clamping voltage of SMBJ110AHE3/5B at its rated peak pulse current?
The SMBJ110AHE3/5B has a maximum clamping voltage (VC) of 177 V at its rated peak pulse current (IPPM) of 3.4 A, measured using the standardized 10/1000 µs double-exponential waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is confirmed in the Vishay datasheet Document Number 88392, page 2.
Is SMBJ110AHE3/5B suitable for automotive applications?
Yes, SMBJ110AHE3/5B is AEC-Q101 qualified (as indicated by the HE3 suffix), making it suitable for automotive applications including body control modules, infotainment power rails, and sensor interface protection. Its operating junction temperature range of –55 °C to +150 °C and validated surge performance meet automotive environmental and reliability requirements.
What does the "5B" in SMBJ110AHE3/5B indicate?
The "5B" in SMBJ110AHE3/5B denotes the preferred package code specifying 13-inch diameter plastic tape-and-reel delivery with a base quantity of 3200 units. This packaging format is optimized for high-volume automated SMT assembly and is distinct from the "52" code used for 7-inch reels (750 units).
How does SMBJ110AHE3/5B differ from bidirectional variants like SMBJ110CA?
SMBJ110AHE3/5B is unidirectional, with cathode marked and intended for DC rail protection where polarity is fixed; SMBJ110CA is bidirectional, unmarked, and used for AC or floating signal line protection. Their VBR, VC, and PPPM ratings are identical, but conduction behavior differs - SMBJ110AHE3/5B blocks forward current beyond VF (~3.5 V at 50 A), while SMBJ110CA clamps in both directions.
What PCB pad layout is recommended for optimal thermal performance of SMBJ110AHE3/5B?
Vishay specifies a minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad area per terminal for SMBJ110AHE3/5B to achieve its rated thermal resistance (RθJA = 100 °C/W) and full 600 W pulse power capability. Smaller pads increase junction temperature and require derating per Figure 2 in datasheet 88392.
SMBJ110AHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 177V
- Current - Peak Pulse (10/1000µs):
- 3.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ110AHE3/5B FAQ
1.How can I place an order for SMBJ110AHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ110AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ110AHE3/5B reliable?
The price and inventory of SMBJ110AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110AHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ110AHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110AHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ110AHE3/5B?
SMBJ110AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ110AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ110AHE3/5B?
For technical support, including SMBJ110AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110AHE3/5B requirements.
6.How does Aetrix verify that SMBJ110AHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ110AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110AHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ110AHE3/5B?
All SMBJ110AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110AHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ110AHE3/5B part is unused and in its original packaging.
Return procedure for SMBJ110AHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ110AHE3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)